Paramagnetic defects in ZnSe crystals doped with iron ions

The electron paramagnetic resonance (EPR) spectra of iron-doped ZnSe single crystals were studied. In addition to cubic Fe³⁺ and Mn²⁺ centers and also Fe²⁺, and Cr²⁺ centers, monoclinic Fe³+ complexes locally compensated by Cu+ ions were revealed. Some trigonal centers with a spin of 3/2 were also found and studied. The zero-field splittings of monoclinic centers were measured, and the parameters of the monoclinic and trigonal spin Hamiltonians were determined. The nature of trigonal centers was discussed.     

Microscopic mechanisms of self-compensation in Si delta-doped GaAs

We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si delta-doped layers, as well as Si delta-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.     

Thermal stability of Li-related 1D defects in ZnSe:Li/GaAs grown by MBE

Curved streak patterns are clearly observed in the azimuth of [1 0 0] when the substrate temperature is heated up to 600°C, suggesting that the one-dimensional Li chains are stable. The growth rates of non-doped ZnSe on Li-doped ZnSe are found to be about 1/2 of that of non-doped ZnSe grown on GaAs. Even when no Li is supplied, the RHEED exhibits clear curved streak patterns. The results indicate that Li atoms segregate onto the topmost surface during the MBE growth, because of high diffusivity of Li, resulting in the formation of 1D array.     

Theoretical investigation of sulfur defects on structural,electronic,and elastic properties of ZnSe semiconductor

The structural, electronic, and elastic properties of Zn Se1-xSx for the zinc blende structures have been studied by using the density functional theory. The calculations were performed using the plane wave pseudopotential method, as implemented in Quantum ESPRESSO. The exchange-correlation potential is treated with the local density approximation pz-LDA for these properties. Moreover, LDA+U approximation is employed to treat the "d" orbital electrons properly. A comparative study of the band gap calculated within both LDA and LDA+U schemes is presented. The analysis of results show considerable improvement in the calculation of band gap. The inclusion of compositional disorder increases the values of all elastic constants. In this study, it is found that elastic constants C11, C12, and C44 are mainly influenced by the compositional disorder. The obtained results are in good agreement with literature.     

Native defects and Pr impurities in orthorhombic CaTiO3 by first-principles calculations

Formation energies of native defects and Pr impurities in orthorhombic CaTiO₃ are explored using the first-principles calculations. The Ca vacancy (V_Ca), Ti vacancy (V_Ti) and Ca antisite (Ca_Ti) are found to be energetically preferable. The Ti antisite (Ti_Ca) and O vacancy (V_O) are not energetically favorable in the wide range of Fermi level. In Pr-doped CaTiO₃, Pr substituting for Ca (Pr_Ca) is likely to form under condition A in which CaTiO₃ is in equilibrium with CaO and O₂. Under condition B (TiO₂, CaTiO₃ and O₂ are in equilibrium), Pr_Ti defect is energetically preferable depending on the Fermi levels. Several native defects and the two sites of Pr impurities in CaTiO₃ are coincided with several different defects in Pr-doped CaTiO₃ reported in the literature. Based on the present calculations, we can elucidate that the Ca deficiency design of the traditional formula Ca_1−xV_Ca(x/2)Pr_xTiO₃ is not the best for efficient red photoluminescence, which is realized via the experimental measurements.     

X centers in ZnSe〈Ga〉 and ZnSe〈As〉 single crystals

The results of experimental studies of the energy spectrum of X centers in ZnSe〈Ga〉 and ZnSe〈As〉 single crystals are presented; the results are in accord with the available calculations. The Stokes shift, the stabilization of the Fermi level near the extrema of allowed bands of ZnSe, anomalies in thermoluminescence and interband photoluminescence, and some other effects are explained on the basis of configuration-coordinate diagrams for associated defects V_Zn-Ga_i and V_Se-As_i, taking into account tetrahedral and hexagonal positions of interstitial atoms. The absence of residual photoconductivity is attributed to the presence of r-and s-recombination centers in the crystals.     

Design and experimental research of angle self-compensation setup for BSDF measurement

When using a single reference to measure the bi-directional scattering distribution function （BSDF）, the incident zenith angle of the tested sample must be identical to that of the reference. In order to get the hemisphere space scattering characteristic on the sample surface, usually a motor drives the sample tilting, then the incident zenith angle is changed and needs to be the compensated by another motor. We mathematically deduce the expression of compensation angle when the incident zenith angle is changed by the rotation of motor. After the incident angle is compensated, the scattering zenith angle and azimuth angle are deduced too. The uncertainty of the system is 0.75%. Scattering measurements are performed on copper sample with visible light under different temperatures.     

Soft ZnSe nanobelts: Characterization and feasibility for assembling tubular ZnSe nanostructures

Soft ZnSe nanobelts were synthesized by taking Triton X-100 as the template surfactant in a microemulsion. Orderly alternating grooves and bulges on the surface of the nanobelts were first observed via TEM images, and potentially divide a nanobelt into quantum wire bundles. We found that the as-prepared nanobelts show remarkable varied photon scattering and optical properties. A tubular ZnSe structure was successfully obtained with extra treatment. This is an important phenomenon because that the regular folded nanobelts should help us to understand the plastic mechanical properties in a nanoscale assembled tubular structure of nanomaterials and modulate the optical properties of semiconductors.     

Three-photon absorption coefficient in ZnSe and ZnO

Three-photon absorption coefficient (α⁽³⁾) measurements have been carried out in ZnSe and ZnO single crystals by quantitative non-linear luminescence method by using both a neodymium—YAlG and a ruby laser. The comparison between the α⁽³⁾ and $\text{α}{}^{\mathrm{(3)}}\text{α}{}^{\mathrm{(2)}}$ experimental data and the numerical results of theoretical perturbative and non-perturbative approaches has been carried out.     

基于TE-TM模变换的新型相位自补偿磁光隔离器

讨论了由45°非互易模变换器与45°互易模变换器构成波导型光隔离器时两者之间须满足的条件,并由此设计了一种新型的相位自补偿磁光隔离器. 利用全矢量有限差分光束传输法对隔离器进行仿真,得到了插入损耗为-12dB,隔离度为-34dB的结果. 关键词： 集成光学 磁光隔离器 非互易模变换器 互易模变换器     

基于ZnSe/Ag/ZnSe可见区透明导电薄膜

利用红外光学材料ZnSe和金属Ag在室温下采用电子束蒸发镀膜技术研制了透明导电薄膜ZnSe/Ag/ZnSe,该薄膜的电子浓度为1.208×1020 cm－3,电子迁移率和电阻率分别为17.22 cm2 V－1 s－1和2.867×10－5 Ω·cm,功函数达到5.13 eV,在可见区的平均透过率理论模拟值超过80%,而测量结果为63.8%,测量的最高透过率为83%.结果表明,该透明导电薄膜具有良好的光学和电学性能,可作为透明电极应用于发光二极管等光电子器件中.     

Nonstoichiometry of ZnSe and CdSe

The variation of the composition of CdSe and ZnSe with varying Cd, Zn or Se pressures at temperatures up to 1400 K was measured with an all-silica Bourdon gauge mounted in an autoclave. The results are evaluated in terms of nonstoichiometry. The metal excess is below detectability for ZnSe, but can be described with a $\text{1}\text{3}$ power dependence of the Cd pressure above CdSe, in reasonable quantitative agreement with literature data derived from Hall-effect measurements. Although excess selenium could also be found in both materials, this is interpreted as being a surface rather than a bulk effect.     

Femtosecond laser-induced ZnSe nanowires on the surface of a ZnSe wafer in water

We present a simple route for ZnSe nanowire growth in the ablation crater on a ZnSe crystal surface. The crystal wafer, which was horizontally dipped in pure water, was irradiated by femtosecond laser pulses. No furnace, vacuum chamber or any metal catalyst were used in this experiment. The size of the nanowires is about 1-3 μm long and 50-150 nm in diameter. The growth rate is 1-3 μm/s, which is much higher than that achieved with molecular-beam epitaxy and chemical vapor deposition methods. Our discovery reveals a rapid and simple way to grow nanowires on designed micro-patterns, which may have potential applications in microscopic optoelectronics.