X射线光电子能谱

X射线光电子能谱（X-ray photoelectron spectroscopy，XPS）技术也被称作用于化学分析的电子能谱（electron spectroscopy for chemical analysis，ESCA）．XPS属表面分析法，它可以给出固体样品表面所含的元素种类、化学组成以及有关的电子结构重要信息，在各种固体材料的基础研究和实际应用中起着重要的作用．文章简要介绍了XPS仪器的工作原理和分析方法，并给出了XPS在科学研究工作中的应用实例．     

X射线光电子能谱

X射线光电子能谱（X-ray photoelectron spectroscopy, XPS）技术也被称作用于化学分析的电子能谱（electron spectroscopy for chemical analysis,ESCA）.XPS属表面分析法,它可以给出固体样品表面所含的元素种类、化学组成以及有关的电子结构重要信息,在各种固体材料的基础研究和实际应用中起着重要的作用.文章简要介绍了XPS仪器的工作原理和分析方法,并给出了XPS在科学研究工作中的应用实例.     

Near surface composition of some alloys by X-ray photoelectron spectroscopy

Chemical compositions of the alloys of CuNi (Cu_0.10Ni_0.90, Cu_0.30Ni_0.70, Cu_0.70Ni_0.30) and BiSb (Bi_0.80Sb_0.20, Bi_0.64Sb_0.34, Bi_0.55Sb_0.45) are determined by X-ray photoelectron spectroscopy. The stoichiometries are determined and are compared with the bulk compositions. Possible sources of systematic errors contributing to the results are discussed. Errors arising out of preferential etching in these alloys have been investigated. It has been inferred from such studies that the preferential etching does not enrich the surface composition with a particular component for the two systems reported here. Quantitative results of CuNi system indicate that the surface regions of the Cu_0.70Ni_0.30 alloy is Cu-rich, although no such evidence is observed in case of BiSb system.     

沉积态铀薄膜表面氧化的X射线光电子能谱

含铀(U)薄膜在激光惯性约束聚变的实验研究中有重要的用途.研究其在不同气氛下的氧化性能可以为微靶制备、储存及物理实验提供关键的实验数据.通过超高真空磁控溅射技术制备了纯U薄膜及金-铀(Au-U)复合平面膜,将其在大气、高纯氩(Ar)气及超高真空度环境中暴露一段时间后,利用X射线光电子能谱仪结合Ar~+束深度剖析技术考察U层中氧(O)元素分布及价态,分析氧化产物及机理.结果显示,初始状态的U薄膜中未检测到O的存在.Au-U复合薄膜中的微观缺陷减弱了Au防护层的屏蔽效果,使其在3周左右时间内严重氧化,产物为U表面致密的氧化膜及缺陷周围的点状腐蚀物,主要成分均为二氧化铀(UO_2).在高纯Ar气中纯U薄膜仅暴露6 h后表面即被严重氧化,生成厚度不均匀的UO_2.在超高真空度环境下保存12 h后,纯U薄膜表面也发生明显氧化,生成厚度不足1 nm的UO_2.Ar~+束对铀氧化物的刻蚀会因择优溅射效应而使UO_2被还原成非化学计量的UO_(2-x),但这种效应受O含量的影响.     

Secondary electron emission control in X-ray photoelectron spectroscopy

Secondary electron emission (SEE) is a major player in surface charging during X-ray photoelectron spectroscopy (XPS); its characteristics and applicability as a current source for electrical measurements are studied. We employ sample biasing and a top retarding grid to control the photoelectron current, and further compare their I–V characteristics with direct spectroscopy of the secondary electrons. Using silica-coated gold substrates, the effect of sample work function on the emitted secondary electrons is shown and fine control over the surface potential gradients, in the range of 10–100 meV, is achieved. XPS-based chemically resolved electrical measurements (CREM) can thus be extended to the positive current regime.     

Investigations of CdS and Ag-CdS nanoparticles by X-ray photoelectron spectroscopy

In the present report, CdS and Ag-CdS nanoparticles were synthesized using cysteine as a capping agent. Surface properties CdS and Ag-CdS nanoparticles were studied by X-ray photoelectron spectroscopy (XPS). XPS study of CdS nanoparticles was carried out as a function of pH and for a refluxed sample at pH 11.2. Effect of dopant concentration on surface properties of Ag-CdS nanoparticles was also studied for as prepared samples as well as for annealed sample at 2% doping. Effect of pH, dopant concentration, and effect of particle size on different sulfur species present in the system was studied. Features of Cd 3d, S 2p and Ag 3d core level have been discussed in detail.     

Pressure effects on aluminium oxidation kinetics using X-ray photoelectron spectroscopy and parallel factor analysis

The effects of water vapour pressure on oxidation kinetics of aluminium have been studied using X-ray photoelectron spectroscopy (XPS) and three-way parallel factor analysis (PARAFAC). While the first technique is a powerful experimental tool for surface oxidation studies, the PARAFAC technique is a sophisticated analytical tool for analysing XPS data. The XPS Al(2p) and O(1s) core level have been used to follow the oxide film growth on clean surfaces at room temperature as a function of oxidation time (ranging from 1 to 60 min) and pressure of water vapour (ranging from 2.0×10⁻⁶ to 6.5×10⁻⁴ Pa). The growth of thin oxide films on aluminium surfaces has been found to follow the Cabrera–Mott inverse logarithmic law in all pressure ranges studied. The pressure effects have shown that the defect formation reaction at the oxide film/gas interface is the rate determining process in the aluminium oxidation. The pressure dependence of oxidation kinetics can be explained on the basis of metal vacancies in the defect structure of thin aluminium oxide films.     

低速高电荷态重离子辐照的GaN晶体表面X射线光电子能谱研究

利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.     

Characterization of plasma fluorinated zirconia for dental applications by X-ray photoelectron spectroscopy

This paper discusses fluorination of biomedical-grade yttria-stabilized zirconia (YSZ) by sulfur hexafluoride plasma treatment and characterization of near-surface chemistry products by X-ray photoelectron spectroscopy (XPS). Deconvolution of the Zr 3d and Y 3d XPS core level spectra revealed formation of both ZrF₄ and YF₃. In addition, seven-coordinate ZrO₂F₅ and/or ZrO₃F₄ phases were deconvolved, retaining similar atomic coordination as the parent oxide and believed to have formed by substitutional displacement of oxygen by fluorine. No additional components attributed to yttria oxyfluoride were deconvolved. Argon ion sputter depth profiling determined the overlayer to be ∼4.0 nm in thickness, and angle resolved XPS showed no angle dependence on component percentages likely due to fluorination extending into the grain boundaries of the polycrystalline substrates. Importantly, the conversion layer did not induce any apparent change in zirconia crystallinity by inspection of Zr-O 3d_5/2,3/2 peak positions and full-width-at-half-maximum values, important for retaining its desirable mechanical properties.     

Investigation by X-ray photoelectron spectroscopy of the transient oxidation of NiAl

X-ray photoelectron spectroscopy (XPS) has been used to study the oxidation of NiAl in oxygen at atmospheric pressure. Prior to oxidation, the native oxide scale on the specimen was removed by ion sputtering and the specimens were (pre-)heated in vacuum before exposure to oxygen. At low oxidation temperatures (<750 K) scales consisted of Al₂O₃ and NiAl₂O₄, with a thin surface layer of NiO, but at higher temperatures were of Al₂O₃, apart from about 0.5 at % Ni. The Ni content in the latter case was constant throughout the scale and did not increase dramatically near the alloy/oxide interface. In the experimental conditions used in this study, initial formation of NiO and NiAl₂O₄ seems to be avoided at the higher oxidation temperatures ( > 750 K).     

Angle-resolved x-ray photoelectron spectroscopy study of GeO_x growth by plasma post-oxidation

The growth process of GeO_x films formed by plasma post-oxidation(PPO) at room temperature(RT) is investigated using angle-resolved x-ray photoelectron spectroscopy(AR-XPS). The experimental results show that the distributions of the Ge~(4+)states, a mixture of the Ge_(2+)and Ge~(3+)states, and the Ge~(1+)states are localized from the GeO_x surface to the GeO_x/Ge interface. Moreover, the Ge~(1+)states are predominant when the two outermost layers of Ge atoms are oxidized.These findings are helpful for establishing in-depth knowledge of the growth mechanism of the GeO_x layer and valuable for the optimization of Ge-based gate stacks for future complementary metal–oxide–semiconductor(MOS) field-effect transistor(CMOSFET) devices.     

Lithium intercalation/deintercalation in transition metal oxides investigated by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy has been used to investigate the lithium deintercalation and the lithium intercalation processes, respectively, in LiCoO₂ and in MO₃ compounds (M=W, Mo). The changes occurring in metal and oxygen core-electron spectra as in valence spectra have been analysed. Beside an expected contribution of metal atoms in the oxidation/reduction processes for LiCoO₂ and LiMO₃ compounds, the results have provided informations on the open question of the implication of the anions in these processes.     

Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy

XPS was used to measure the energy discontinuity in the GaN/diamond heterostructure. The valence band offset (VBO) was determined to be 0.38 ± 0.15 eV and a type-II heterojunction with a conduction band offset (CBO) of 2.43 ± 0.15 eV was obtained.     

X-ray photoelectron spectroscopy characterization of stain-etched luminescent porous silicon films

The surface and in-depth chemical nature of the photoluminescent stained Si layer obtained with a novel procedure based on HF/HNO₃ is presented. Oxide-free porous Si surfaces result from controlled preparation, storing and handling of samples, as revealed by parallel X-ray photoelectron spectroscopy and X-ray-induced Auger electron spectroscopy measurements, coupled with Ar⁺ ion sputtering. The present findings support the model for the porous layer of oxidized samples of Si grains embedded in a silica gel matrix.     

X-ray photoelectron spectroscopy investigation of the carburization of 310 stainless steel

The surface of 310 stainless steel (310SS) samples was investigated by X-ray photoelectron spectroscopy (XPS) after 500 h cyclic exposure to two carburizing atmospheres: CH₄ (2%)–H₂ (98%) at 800 °C, and CH₄ (10%)–H₂ (90%) at 1100 °C. The depth distribution of various elements in the surface region was obtained by XPS after successive cycles of argon etching. The microstructure of the alloy was observed by scanning electron microscopy (SEM) and the phases formed during the exposure were analyzed by X-ray diffraction (XRD). The results showed that the major phases that were formed within few micrometer depth during exposure at 800 °C include both iron and chromium carbides. (Mn, Cr) oxide was also formed as a result of the reaction with the residual oxygen of the atmosphere. A region of few microns width that was relatively depleted of chromium was formed under the surface as a result of the outwards diffusion of chromium. The exposure to the reducing atmosphere at 1100 °C led to the formation of various iron and chromium carbides. No oxide was formed during exposure. In all exposed samples, the surface was Cr enriched while nickel remained buried under the surface region that reacted with the atmosphere.     

X-ray photoelectron spectroscopy study of magnetic films

Ta/NiO_x/Ni₈₁Fe₁₉/Ta films were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field H_ex and the coercivity H_c of NiO_x/Ni₈₁Fe₁₉ as a function of the ratio of Ar to O₂ during the deposition process were studied. The composition and the chemical states in the interface region of NiO_x/NiFe were also investigated using X-ray photoelectron spectroscopy (XPS) and the peak decomposition technique. The results show that the ratio of Ar to O₂ has a great effect on the chemical states of nickel in NiO_x films. The exchange coupling field H_ex and the coercivity H_c of Ta/NiO_x/Ni₈₁Fe₁₉/Ta are thus seriously affected. XPS is shown to be a powerful tool for characterizing magnetic films. Received: 18 July 2001 / Accepted: 21 December 2001 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-010/6232-7283, E-mail: guanghua_yu@263.net     

Influence of surface structure of SiC nano-sized powder analyzed by X-ray photoelectron spectroscopy on basic powder characteristics

SiC nano-sized powder with high specific surface area is potentially of considerable interest to form fully dense SiC ceramics at lower sintering conditions (temperature/pressure). Surface structure of six kinds of commercially available SiC nano-sized powders produced by three different venders was analyzed in detail by X-ray photoelectron spectroscopy (XPS). The overall XPS spectra of all nano-sized powders detected O-based bond (O1s peak), C-based bond (C1s peak) and Si-based bond (Si2s and Si2p peak). Surface structure of nano-sized powders included one of three impurity phases: (1) free carbon, (2) silica and (3) silicon oxycarbide. Furthermore, the influences of surface structure by XPS were systematically investigated on basic powder characteristics, such as chemical composition, morphology, particle density and primary particle size. It was revealed that the basic powder characteristics had a close relationship to the surface structure of nano-sized powder each impurity.     

X-ray photoelectron spectroscopy study of cubic boron nitride single crystals grown under high pressure and high temperature

The defects, impurities and their bonding states of unintentionally doped cubic boron nitride (cBN) single crystals were investigated by X-ray photoelectron spectroscopy (XPS). The results indicate that nitrogen vacancy (V_N) is the main native defect of the cBN crystals since the atomic ratio of B:N is always larger than 1 before Ar ion sputtering. After sputter cleaning, around 6 at% carbon, which probably comes from the growth chamber, remains in the samples as the main impurity. Carbon can substitute nitrogen lattice site and form the bonding states of CBN or CB, which can be verified by the XPS spectra of C1s, B1s and N1s. The C impurity (acceptor) and N vacancy (donor) can compose the donor-acceptor complex to affect the electrical and optical properties of cBN crystals.     

X-ray photoelectron spectroscopic study on initial oxidation of hafnium hydride fractured in an ultra-high vacuum

The initial oxidation of hafnium hydride was studied by X-ray photoelectron spectroscopy (XPS). The clean surface of hafnium hydride was obtained by fracturing the specimen in an XPS measurement chamber under a background pressure of 2.7 × 10⁻⁶ Pa. The fractured surface was oxidized in situ with the exposure to high-purity oxygen and the residual gases in an ultra-high vacuum chamber. The XPS spectra for the oxidized surfaces had the shoulder due to the oxidation, and the shoulder grew up with increase in exposure time even in the ultra-high vacuum. The factor analysis for the XPS spectra of the oxidized surface showed that the oxide formed in the chamber consists of only the hafnium dioxide, and no suboxide states are contained. The result corresponded to the oxide observed on hafnium hydride fractured in air.     

电激励O2（a1Δg）发生器的实验研究

在纯氧,及氧气和氩气的混合气体情况下,对射频放电产生O2（a1Δg）进行了实验研究。射频频率为13.56MHz,额定功率500W,放电压力133.0~399.0Pa, 氧气流量最大为1.4mmol/s, 氩气流量为2.1mmol/s。研究了O2（a1Δg）产率随气体流量、放电气压以及混合气体放电条件的变化。O2（a1Δg）产率最大值约为17.5%。