Diode-pumped continuous-wave and femtosecond laser operations of a heterocomposite crystal Yb3+: SrY4(SiO4)3O parallel Y2Al5O12

We report cw and femtosecond laser operations under diode pumping of a diffusion-bonding heterocomposite Yb-doped crystal: Yb3+:SrY4(SiO4)3O parallel Y2Al5O12(YAG paralell SYS:Yb). To show the advantages of this heterocomposite crystal over classical Yb:SYS crystal, we first investigate the high-power cw regime. A cw power of 4.3 W is demonstrated. The femtosecond regime is also investigated, and 1-W-average-power, 130-fs pulses at 1070 nm are produced, which represents, to our knowledge, the first demonstration of an Yb-doped heterocomposite mode-locked laser.     

Spectroscopy and femtosecond laser performance of Yb3+:YAlO3 crystal

We report what we believe to be the first demonstration of cw and passively mode-locked Yb(3+):YAlO(3) (Yb:YAP) laser operation under diode pumping. Spectroscopic properties of a 0.6 at.%Yb(3+)-doped YAP single crystal were investigated. Output power up to 1.2 W with slope efficiency of 64.5% in the cw regime and 225 fs pulse duration with average power of 0.8 W from a mode-locked Yb:YAP laser were demonstrated.     

Femtosecond and continuous-wave laser performance of a diode-pumped Yb3+:CaYAlO4 laser

The cw and femtosecond laser operations of Yb(3+):CaYAlO(4) (Yb:CYA) are demonstrated. The laser emitted a maximum cw power of 1.94 W with a slope efficiency (η(slope)) of 71% and an optical-to-optical efficiency (η(opt)) of 51%. Under mode-locking operation, the laser emitted near transform-limited pulses with 156 fs pulse width, 8.1 nJ pulse energy and 0.74 W average power. The η(slope) and η(opt) of the mode-locked laser were 37% and 20%, respectively.     

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.     

High-power diode-pumped Yb3+:CaF2 femtosecond laser

We report what is believed to be the first demonstration of a high-power passively mode-locked diode-pumped femtosecond laser based on an Yb3+:CaF2 single crystal, directly pumped by a 15-W fiber-coupled laser diode. With a 5-at. % Yb3+ -doped sample and prisms for dispersion compensation we obtained pulses as short as 150 fs, with 880 mW of average power and up to 1.4-W average output power, with a pulse duration of 220 fs, centered at 1049 nm. The laser wavelength could be tuned from 1040 to 1053 nm in the femtosecond regime. Using chirped mirrors for dispersion compensation, the oscillator provided up to 1.74 W of average power, with a pulse duration of 230 fs, corresponding to a pulse energy of 20 nJ and a peak power of 85 kW.     

Passively mode-locked Yb:KLu(WO4)2 thin-disk oscillator operated in the positive and negative dispersion regime

We demonstrate a passively mode-locked femtosecond Yb:KLu(WO(4))(2) thin-disk laser oscillator. Chirped-pulse operation in the positive dispersion regime as well as solitary operation have been realized, and the laser performance of both configurations are compared. In the solitary mode-locking regime the output power exceeds 25 W in a diffraction-limited beam, and pulse durations as short as 440 fs at a 34.7 MHz repetition rate have been generated. For the first time we present a chirped-pulse operation of a thin-disk oscillator that yields a maximum average output power of 9.5 W with a Fourier limit of 450 fs.     

Spectroscopy and femtosecond laser performance of Yb3+ :Gd0.64Y0.36VO4 crystal

We report for the first time on the efficient continuous-wave and mode-locked laser operation of a diode-pumped Yb:Gd_0.64Y_0.36VO₄ laser. cw output power of 855 mW with a slope efficiency of 45% with respect to the absorbed pump power was demonstrated for the 2.1%-doped crystal. In mode-locked regime with SESAM as passive shutter pulses as short as 100 fs were obtained. PACS 42.55.Xi; 42.65.Re; 42.70.Hj     

Diode-pumped femtosecond Yb:KGd(WO(4))(2) laser with 1.1-W average power

We demonstrate what is to our knowledge the first mode-locked Yb:KGd(WO(4))(2) laser. Using a semiconductor saturable-absorber mirror for passive mode locking, we obtain pulses of 176-fs duration with an average power of 1.1 W and a peak power of 64 kW at a center wavelength of 1037 nm. We achieve pulses as short as 112 fs at a lower output power. The laser is based on a standard delta cavity and pumped by two high-brightness laser diodes, making the whole system very simple and compact. Tuning the laser by means of a knife-edge results in mode-locked pulses within a wavelength range from 1032 to 1054 nm. In cw operation, we achieve output powers as high as 1.3 W.     

Tunable second harmonic generation from a Kerr-lens mode-locked Yb:YCa_4O(BO_3)_3 femtosecond laser

We experimentally demonstrated a diode-pumped Kerr-lens mode-locked femtosecond(fs) laser with a self-frequency doubling Yb:YCa_4O(BO_3)_3 crystal.Sub-40 fs laser pulses were directly generated from the oscillator without extracavity compression.The central wavelength was tunable from 1039 nm to 1049 nm with a typical bandwidth of 35 nm and an average output power of 53 mW.For the first time,a self-frequency doubled second harmonic green laser with tunable range from 519 nm to 525 nm was observed.     

47-fs diode-pumped Yb3+:CaGdAlO4 laser

The experimental demonstration of a diode-pumped passively mode-locked femtosecond laser based on an Yb3+:CaGdAlO4 single crystal is reported. The oscillator is directly diode pumped by a high-brightness 5 W fiber coupled laser diode, and pulses are produced by use of a semiconductor saturable-absorber mirror. It permits the production of pulses as short as 47 fs at 1050 nm, which are to our knowledge the shortest laser pulses obtained from an oscillator based on Yb3+-doped bulk materials. The average power is 38 mW, and the repetition rate is 109 MHz.     

Diode-pumped 65 fs Kerr-lens mode-locked Yb(3+):Lu(2)O(3) and nondoped Y(2)O(3) combined ceramic laser

Diode-pumped Kerr-lens mode-locked laser operation of Yb(3+):Lu(2)O(3) and nondoped Y(2)O(3) combined ceramics has been achieved; 65 fs pulses with an average power of 320 mW under 5 W of pump power were obtained at the center wavelength of 1032 nm. The spectral bandwidth and the time bandwidth product were 18.9 and 0.345 nm, respectively. To our knowledge, this is the first demonstration of a Kerr-lens mode-locked laser operation based on Yb(3+):Lu(2)O(3) ceramic.     

Continuous-wave and femtosecond laser operation of Yb:CaGdAlO4 under high-power diode pumping

We demonstrate the generation of 68 fs secant hyperbolic pulses at a 105 MHz repetition rate with an average power of 520 mW from a diode-pumped Yb(3+):CaGdAlO(4) mode-locked laser. A semiconductor saturable absorber allows passive mode locking, and a 15 W diode laser is used to pump directly the crystal. To our knowledge this represents the highest average power ever obtained for a sub-100 fs diode-pumped Yb-bulk laser.     

Diode-pumped, high-average-power femtosecond Cr3+ :LiCAF laser

We demonstrate a high-average-power continuous wave (cw) and cw mode-locked Cr3+ :LiCAF laser pumped by broad-area laser diodes. In cw lasing experiments, up to 580 mW of output was obtained with 4.35 W of incident pump. A semiconductor saturable absorber mirror was used to initiate stable, self-starting, mode locking. In the cw mode-locked regime, the Cr3+ :LiCAF laser produced nearly transform-limited, 67 fs long pulses near 800 nm with an average output power of 300 mW. The pulse repetition rate was 120 MHz, with a pulse energy of 2.5 nJ.     

High-power tunable diode-pumped Yb3+:CaF2 laser

Results of diode-pumped cw laser operation of an Yb3+:CaF2 single crystal are reported for what is to our knowledge the first time. With a 5-at.% Yb3+ -doped sample we obtained 5.8-W output power at 1053 nm for 15 W of incident power at 980 nm. The laser wavelength could be tuned from 1018 to 1072 nm, and a small-signal gain as high as 1.8 was achieved, showing the great potential of Yb3+:CaF2 as an amplifier medium for femtosecond pulses.     

Direct amplification of ultrashort pulses in μ-pulling-down Yb:YAG single crystal fibers

We demonstrated that Yb:YAG single crystal fibers have a strong potential for the amplification of femtosecond pulses. Seeded by 230?fs pulses with an average power of 400?mW at 30?MHz delivered by a passively mode-locked Yb:KYW oscillator, the system produced 330?fs pulses with an average power of 12?W. This is the shortest pulse duration ever produced by an Yb:YAG amplifier. The gain in the single crystal fiber reached a value as high as 30 in a simple double-pass configuration.     

Diode-pumped passively mode-locked Nd:YVO4 laser at 1342 nm with periodically poled LiNbO3

In this Letter, we demonstrate a nonlinear-mirror (NLM) mode-locked diode-pumped solid-state Nd:YVO4 laser operating at 1342?nm, in which the NLM comprises a periodically poled LiNbO3 crystal and a dichroic mirror. The self-starting threshold for cw mode locking is 1.5?W, which is significantly lower than that of saturable absorber mode locking. An average power of 1.52?W at 1342?nm is obtained under diode pump power of 10?W at 808?nm, with the slope efficiency being up to 16.8%. The pulse width and the repetition rate of the mode-locked laser output are about 9.5?ps and 101?MHz, respectively.     

Diode-pumped Yb:Sr(3)Y(BO(3))(3) femtosecond laser

We have developed a diode-pumped Yb(3+)Sr(3)Y(BO(3))(3) (Yb:BOYS) laser generating 69-fs pulses, at a central wavelength of 1062 nm. This laser is mode locked by use of a semiconductor saturable-absorber mirror and emits 80 mW of average power at 113 MHz. This is, to our knowledge, the first mode-locked Yb:BOYS laser and the shortest duration obtained from an ytterbium laser with a crystalline host. The central wavelength can be tuned from 1051 to 1070 nm, for sub-100-fs pulses. We have also achieved an average power as high as 300 mW with pulse duration of 86 fs at 1068 nm.     

Efficient and tunable diode-pumped femtosecond Yb:glass lasers

Diode-pumped Yb:phosphate and Yb:silicate glass lasers have been passively mode locked for the first time to the authors' knowledge. Reliable self-starting mode locking without critical cavity alignment has been achieved with intracavity semiconductor saturable-absorber mirrors and soliton mode locking. We generated pulses as short as 58 fs with the Yb:phosphate laser and 61 fs with the Yb:silicate laser at average output powers of 65 and 53 mW, respectively. The pulse repetition rate was 112 MHz. Additionally, we demonstrated tunability of femtosecond pulses from 1025 to 1065 nm for the Yb:phosphate and from 1030 to 1082 nm for the Yb:silicate glasses. The highest mode-locked output power was 405 mW, with 183-fs pulses from the phosphate glass. The diode pump power was 1.68 W, corresponding to 24% optical-to-optical efficiency. The highest cw output power was 510 mW at the same incident pump power.     

Yb3+-doped YVO4 crystal for efficient Kerr-lens mode locking in solid-state lasers

We report the first demonstration, to our knowledge, of soft-aperture Kerr-lens mode locking in a diode-pumped femtosecond Yb3+:YVO4 laser. Near-transform-limited pulses as short as 61 fs are generated around a center wavelength of 1050 nm with an output power of 54 mW and a pulse repetition frequency of 104.5 MHz. This is, to our knowledge, the shortest pulse generated directly from an Yb laser having a crystalline host material. The femtosecond operation has a mode-locking threshold at an absorbed pump power of 190 mW. The nonlinear refractive indexes of the Yb3+:YVO4 crystal have been measured to be 19 x 10(-16) cm2/W and 15 x 10(-16) cm2/W for the sigma and pi polarizations, respectively, at 1080 nm.     

4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror

We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.