High sensitive photoassociation spectroscopy based on modulated ultra-cold Cs atoms

In this paper, a high sensitive photoassociation spectroscopy based on modulated ultra-cold cesium atoms is reported. The cold cesium gas in the magneto-optical trap is illuminated by a photoassociation laser with red detuning 40 cm^-1 below the 6S _1/2+6P _3/2 dissociation limit and photoassociation to the excited state ultra-cold molecules is observed. The rotationally bound levels of 0_g ^- state are well resolved using the lock-in detection. The 0_g ^-, 1_g and 0_u ⁺ long range states which connect to this dissociation limit are measured. The long-range dipole–dipole interaction constants are determined through a fit of the experimental energy levels. PACS 33.15.Mt; 33.20.Vq; 32.80.Pj     

基于振幅调制的超冷铯原子高分辨光缔合光谱的实验研究

基于振幅调制的超冷铯原子高分辨光谱的实验研究，用相对于铯分子6S_1/2+6P_3/2离解限红失谐的光缔合激光作用于磁光阱中超冷铯原子，观察到通过光缔合产生的激发态超冷分子.在实验中，为了得到高信号-噪声比的光缔合光谱，利用声光调制器对俘获光进行振幅调制，将探测到的超冷铯原子的荧光信号利用lock-in技术解调.同时利用密度矩阵方程系统地分析了实验结果.     

Carrier transport and luminescence properties of n-type GaN

The surface morphology, electrical properties and optical properties of Si doped n-type GaN were investigated. The intentional SiH₄ doped GaN films were grown by metal organic chemical vapor deposition with the electron concentration varying from 3×10¹⁶ cm⁻³ to 5.4×10¹⁸ cm⁻³. The surface morphology shows that the roughness and dislocation pits increase as the mass flow rate of SiH₄ increases, which indicates that the quality of GaN degrades gradually. The activation energy of Si in GaN with different n concentrations varies from 12 to 22 meV, which may originate from the interactions of donor wave functions. The carrier transport mechanism with increasing temperature from 100 to 420 K was concluded as the complex effect of both impurity scattering and phonon scattering. The position of the near band edge emission peak was determined by both renormalization of the band gap and B-M effect. The intensity variations of the yellow luminescence could be explained by the change of Ga vacancy concentration caused by Si doping. Supported by the National Basic Research Program of China (Grant No. 2006CB6049), the National Hi-Tech Research and Development Program of China (Grant No. 2006AA03A142), the National Natural Science Foundation of China (Grant Nos. 60721063, 60731160628 and 60676057), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050284004) and the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2005210)     

Threshold quantum secure direct communication without entanglement

For the first time, a threshold quantum secure direct communication (TQSDC) scheme is presented. Similar to the classical Shamir's secret sharing scheme, the sender makes n shares, S1, …, Sn of secret key K and each receiver keeps a share secretly. If the sender wants to send a secret message M to the receivers, he en-codes the information of K and M on a single photon sequence and sends it to one of the receivers. According to the secret shares, the t receivers sequentially per-form the corresponding unitary operations on the single photon sequence and ob-tain the secret message M. The shared shares may be reusable if it can be judged that there is no eavesdropper in line. We discuss that our protocol is feasible with current technology.     

Accurate studies on dissociation energies of diatomic molecules

The molecular dissociation energies of some electronic states of hydride and N2 molecules were studied using a parameter-free analytical formula suggested in this study and the algebraic method (AM) proposed recently. The results show that the accurate AM dissociation energies DeAM agree excellently with experimental dissociation energies Deexpt, and that the dissociation energy of an electronic state such as the 23△g state of 7Li2 whose experimental value is not available can be predicted using the new formula.     

Threshold proxy quantum signature scheme with threshold shared verification

A threshold proxy quantum signature scheme with threshold shared verification is proposed. An original signer could authorize a group as its proxy signers. Then only t or more of n persons in the proxy group can generate the proxy signature on behalf of the original signer and any t − 1 or fewer ones cannot do that. When the proxy signature needs to be verified, any t or more of n persons belonging to the verification group can verify the message and any t − 1 or fewer ones cannot verify the validity of the proxy signature. Supported by the National Basic Research Program of China (973 Program)(Grant No. 2007CB311100), the National High-Technology Research and Development Program of China (Grant Nos. 2006AA01Z419 and 20060101Z4015), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 90604023), the Scientific Research Common Program of Beijing Municipal Commission of Education (Grant No. KM200810005004), the Scientific Research Foundation for the Youth of Beijing University of Technology (Grant No. 97007016200701), the Doctoral Scientific Research Activation Foundation of Beijing University of Technology (Grant No. 52007016200702), and the National Laboratory for Modern Communications Science Foundation of China (Grant No. 9140C1101010601)     

First-principles calculations on the electronic structure and optical properties of BaSi<Subscript>2</Subscript>

The electronic structure, densities of states and optical properties of the stable orthorhombic BaSi₂ have been calculated using the first-principle density function theory and pseudopotential method. The results show that BaSi₂ is an indirect semiconductor with the band gap of 1.086 eV, the valence bands of BaSi₂ are mainly composed of Si 3p, 3s and Ba 5d, and the conduction bands are mainly composed of Ba 6s, 5d as well as Si 3p. The static dielectric function ɛ ₁(0) is 11.17, the reflectivity n ₀ is 3.35, and the biggest peak of the absorption coefficient is 2.15×10₅ cm⁻¹. Supported by the National Natural Science Foundation of China (Grant Nos. 60566001 and 60766002), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Specialized Fund of Nomarch for Excellent Talent of Science and Technology of Guizhou Province (Grant No. Z053114), the Scientific and Technological Projects for the Returned Overseas of Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province (Grant No. Z053123)     

Quantum threshold group signature

In most situations, the signer is generally a single person. However, when the message is written on behalf of an organization, a valid message may require the approval or consent of several persons. Threshold signature is a solution to this problem. Generally speaking, as an authority which can be trusted by all members does not exist, a threshold signature scheme without a trusted party appears more attractive. Following some ideas of the classical Shamir’s threshold signature scheme, a quantum threshold group signature one is proposed. In the proposed scheme, only t or more of n persons in the group can generate the group signature and any t − 1 or fewer ones cannot do that. In the verification phase, any t or more of n signature receivers can verify the message and any t − 1 or fewer receivers cannot verify the validity of the signature. Supported by the National Basic Research Program of China (973 Program)(Grant No. 2007CB311100), the National High-Technology Research and Development Program of China (Grant Nos. 2006AA01Z419 and 2006AA01Z440), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 90604023), the Scientific Research Common Program of Beijing Municipal Commission of Education (Grant No. KM200810005004), the Scientific Research Foundation for the Youth of Beijing University of Technology (Grant No. 97007016200701), the Doctoral Scientific Research Activation Foundation of Beijing University of Technology (Grant No. 52007016200702), the ISN Open Foundation, and the National Laboratory for Modern Communications Science Foundation of China (Grant No. 9140C1101010601)     

Ultra-high resolution trap-loss spectroscopy of ultracold <Superscript>133</Superscript>Cs atom long-range states in a magnetooptical trap

We present an ultra-high resolution spectroscopic study of the photoassociation of cesium atoms inside a magnetooptical trap using trap-loss detection with photoassociation laser slow scanning. The photoassociation spectra show vibrational levels of three molecular symmetries below the 6S _1/2 + 6P _3/2 dissociation limit. A dynamic model is derived to extract the photoassociation rate from the trap-loss spectrum. Many observed rotational levels are well resolved, which indicate d-wave and higher partial wave contributions to the photoassociation cross section.     

High resistance modulation by the electric field based on La0.9Sr0.1MnO3/SrTiO3/Si structure

A field-effect configuration based on La_0.9Sr_0.1MnO₃/SrTiO₃/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La_0.9Sr_0.1MnO₃/SrTiO₃/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×10⁷% and 2.6×10⁶% when V _DS are −2 and −6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are worthy of further investigations for potential applications of resistance modulation by electrostatic field in the heterostructures consisting of perovskite oxides and Si. Supported by the National Natural Science Foundation of China (Grant No. 50672120) and the National Basic Research Program of China (Grant No. 2004CB619004)     

Pd-Si binary bulk metallic glass

Pd_80+x Si_20−x (x = 0, 1, and 2) binary metallic glasses with the diameter ranging from 7 to 8 mm were prepared by a combination of fluxing and water quenching or air cooling. Thermal analysis results show that with increasing Si content, the glass transition temperature T _g, the initial crystallization temperature T _x and the onset crystallization temperature T _p of Pd-Si binary glassy alloys increase. Moreover, the supercooled liquid region reaches 61 K. It indicates that Pd-Si binary alloys possess large glass forming ability, which can be greatly improved by fluxing treatment. Supported by the National Basic Research Program of China (Grant No. 2007CB613905) and the National Natural Science Foundation of China (Grant Nos. 50671050 and 50431030)     

Correlation between superheated liquid fragility and potential energy landscape in Gd-and Pr-based glass-forming alloys

The kinetic viscosities of superheated liquids on the Gd-based bulk glass-forming alloys are measured by an oscillating viscometer in a high vacuum atmosphere. According to the viscosity data, the parameters of superheated liquid fragility, M, are calculated. Based on the values of M in Gd-and Pr-based (cited from the literature) glass-forming alloys, we find that there is a linear correlation between M and the absolute value of mixing enthalpy, |ΔH _mix|, in an alloy system with the same base element, and the larger M, the smaller |ΔH _mix|. The alloy with larger M exhibits the larger height of energy barriers separating the minima on the potential energy landscape. Supported by the National Basic Research Program of China (973 Program) (Grant No. 2007CB613901), the National Natural Science Foundation of China (Grant No. 50231040), the Natural Science Foundation of Shandong Province of China (Grant No. Z2004F02), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050422024)     

Three-dimensional correlated-fermion phase separation from analysis of the geometric mean of the individual susceptibilities

A quasi-Gaussian approximation scheme is formulated to study the strongly correlated imbalanced Fermions thermodynamics, where the mean-field theory is not applicable. The non-Gaussian correlation effects are understood to be captured by the statistical geometric mean of the individual susceptibilities. In the three-dimensional unitary fermions ground state, a universal nonlinear scaling transformation relates the physical chemical potentials with the individual Fermi kinetic energies. For the partial polarization phase separation to full polarization, the calculated critical polarization ratio is δ _C = [1−(1−ξ)^6/5]/[1+(1−ξ)^6/5] ≐ 0.34. ξ = 4/9 gives the ratio of the symmetric ground state energy density to that of the ideal fermion gas. Supported by the National Natural Science Foundation of China (Grant Nos. 10875050 and 10675052), the Fund of Central China Normal University, and the Foundation of Ministry of Education of China (Grant No. IRT0624)     

Study of transient luminescence of three kinds of Ru complexes bound to DNA

The transient luminescence of three kinds of ruthenium complexes [Ru(bpy)₂(7-CH₃-dppz)]²⁺, [Ru(bpy)₂(7-F-dppz)]²⁺ and [Ru(phen)₂(7-F-dppz)]²⁺ bound to calf thymus DNA (ctDNA) has been studied by using the time-resolved spectroscopy. The results show that the luminescence is due to the radiative decay from the charge-transfer states to the ground state. By the interaction with DNA, the radiativeless rate of the photoexcited Ru complex molecules decreases, which results in the increase of luminescence lifetime and efficiency. The structure of the Ru complex has an important impact on the interaction with DNA. The [Ru(bpy)₂(7-CH₃-dppz)]²⁺ shows the longest luminescence lifetime (about 382 ns), while the [Ru(bpy)₂(7-F-dppz)]²⁺ shows the shortest lifetime (about 65 ns). The possible origin of the luminescence dynamics is discussed. Supported by the National Natural Science Foundation of China (Grant Nos. 60478013 and 20571089), the Key Program of Natural Science Foundation of Guangdong Province of China (Grant No. 05101819), the Doctoral Program Foundation of Institutions of Higher Education of China (Grant No. 20040558031) and the Scientific Research Foundation of Maoming College (Grant No. 203346)     

Superconductivity at 36 K in gadolinium-arsenide oxides GdO<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>F<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>FeAs

In this paper we report the fabrication and superconducting properties of GdO_1−x F _x FeAs. It was found that when x is equal to 0.17, GdO_0.83F_0.17FeAs is a superconductor with the onset transition temperature T _c^on ≈ 36.6 K. Resistivity anomaly near 130 K was observed for all samples up to x = 0.17, and such a phenomenon is similar to that of LaO_1−x F _x FeAs. Hall coefficient indicates that GdO_1−x F _x FeAs is conducted by electron-like charge carriers. Recommended by Prof. Nie Yuxin, Executive Editor of Science in China Series G-Physics, Mechanics & Astronomy Supported by the National Natural Science Foundation of China (Grant Nos. 10221002/A0402 and 10774170/A0402), the National Basic Research Program of China (973 Program) (Grant Nos. 2006CB601000, 2006CB921107 and 2006CB921802), and the Chinese Academy of Sciences (ITSNEM)     

Experimental determination of the rate constant for spin exchange in collisions of polarized metastable helium atoms with ground-state cesium atoms

The rate constant for spin exchange in a system consisting of a metastable helium atom and an alkali-metal atom is determined. An experiment on optical orientation of atoms established that the rate constant for spin exchange in a collision of a metastable 2³ S ₁ helium atom with a cesium atom in the 6² S _1/2 ground state equals (2.8±0.8)×10⁻⁹ cm³ s⁻¹. The rate constant for chemoionization of cesium atoms by metastable helium atoms was determined at the same time to be (1.0±0.3)×10⁹ cm³s⁻¹. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 3, 145–148 (10 August 1997)     

Giant enhancement of magnetocaloric effect in metallic glass matrix composite

The magnetocaloric effect (MCE) has made great success in very low temperature refrigeration, which is highly desirable for application to the extended higher temperature range. Here we report the giant enhancement of MCE in the metallic glass composite. The large magnetic refrigerant capacity (RC) up to 103 J·kg⁻¹ is more than double the RC of the well-known crystalline magnetic refrigerant compound Gd₅Si₂Ge_1.9Fe_0.1 (357 J·kg⁻¹) and MnFeP_0.45As_0.55 (390 J·kg⁻¹)(containing either exorbitant-cost Ge or poisonous As). The full width at half maximum of the magnetic entropy change (ΔS _m) peak almost spreads over the whole low-temperature range (from 303 to 30 K), which is five times wider than that of the Gd₅Si₂Ge_1.9Fe_0.1 and pure Gd. The maximum ΔSm approaches a nearly constant value in a wide temperature span over 100 K, and however, such a broad table-like region near room temperature has seldom been found in alloys and compounds. In combination with the intrinsic amorphous nature, the metallic glass composite may be potential for the ideal Ericsson-cycle magnetic refrigeration over a broad temperature range near room temperature. Supported by the National Natural Science Foundation of China (grant Nos. 50621061 and 50731008) and the National Basic Research Program of China (973 Program) (Grant No. 2007CB613904)     

First-principle study on the electronic structure of stressed CrSi<Subscript>2</Subscript>

The electronic structure of stressed CrSi₂ was calculated using the first-principle methods based on plane-wave pseudo-potential theory. The calculated results showed that, under the uniaxial compression, the energy level of CrSi₂ shifted toward high energy and its energy gap became wider with the increasing uniaxial stress, while the gap became narrower under the negative uniaxial stress. When the negative uniaxial stress was up to −18.5 GPa, CrSi₂ was converted into a direct-gap semiconductor with the band gap of 0.32 eV. Supported by the National Natural Science Foundation of China (Grant No. 60566001), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Program for the Excellent Young Talents of Guizhou Province (Grant No. 20050528), the Specialized Nomarch Research Fund for the Excellent Science and Technology and Education Talent’s Projects of Guizhou Province, Scientific and Technological Projects for the Returned Overseas Chinese Scholars, the Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province     

Multiparty simultaneous quantum identity authentication with secret sharing

Two multiparty simultaneous quantum identity authentication (MSQIA) protocols based on secret sharing are presented. All the users can be authenticated by a trusted third party (TTP) simultaneously. In the first protocol, the TTP shares a random key K with all the users using quantum secret sharing. The ith share acts as the authentication key of the ith user. When it is necessary to perform MSQIA, the TTP generates a random number R secretly and sends a sequence of single photons encoded with K and R to all the users. According to his share, each user performs the corresponding unitary operations on the single photon sequence sequentially. At last, the TTP can judge whether the impersonator exists. The second protocol is a modified version with a circular structure. The two protocols can be efficiently used for MSQIA in a network. They are feasible with current technology. Supported by the National Basic Research Program of China (973 Program) (Grant No. 2007CB311100), the National High Technology Research and Development Program of China (Grant Nos. 2006AA01Z419 and 20060101Z4015), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 90604023), the Scientific Research Common Program of Beijing Municipal Commission of Education (Grant No. KM200810005004), the Scientific Research Foundation for the Youth of Beijing University of Technology (Grant No. 97007016200701), the National Research Foundation for the Doctoral Program of Higher Education of China (Grant No. 20040013007), the National Laboratory for Modern Communications Science Foundation of China (Grant No. 9140C1101010601), and the Doctor Scientific Research Activation Foundation of Beijing University of Technology (Grant No. 52007016200702)     

Charge order and spin order in Nd0.5Sr0.5Mn1? x (Ga x , Ti x )O3 system

Magnetic properties of Nd0.5Sr0.5Mn1-x(Gax,Tix)O3 system (0.04≤x≤0.4) were investigated through magnetization and electron spin resonance (ESR) measurements. It was observed that a small amount of Ti substitution for Mn will destroy the charge-ordering (CO) phase completely and induce the cluster-spin-glass phase in the system, which displays a procedure of collapse of CO and of an enhancement of spin ordering (SO) phase. In contrast, the Ga substitution for Mn induces a melting of CO phase in the system. It was observed that with substitution the CO phase is suppressed gradually and the remanent CO phase is retained all the while, and withal, there is a co-existence of AFM CO phase and FM SO at low temperature. In addition, an abrupt rise of magnetization was observed in M-Tcurves. We attributed this abnormal phenomenon to a transition from canted AFM SO to FM SO in CO region.