Theoretical design study on multifunctional triphenyl amino‐based derivatives for OLEDs

The use of triphenyl amino‐based derivatives in organic light‐emitting diodes (OLEDs) can significantly improve their efficiency and stability and especially their electroluminescence characteristics – most of the new hole‐transport materials have this feature. In this study, a series of triphenyl amino‐based compounds were computed, including two newly designed molecules. They can function as charge transport materials and emitters with high efficiency and stability. To reveal the relationship between the properties and structures of these bifunctional and multifunctional electroluminescent materials, the ground and excited state geometries were optimized at the B3LYP/6‐31G(d), HF/6‐31G(d), TD‐B3LYP/6‐31G(d), and CIS/6‐31G(d) levels, respectively. The ionization potentials (IPs) and electron affinities (EAs) were computed. The lowest excitation energies, the maximum absorption, and emission wavelengths of these compounds were calculated by employing the time‐dependent density functional theory (TD‐DFT) method. Also, the mobilities of holes and electrons were studied computationally based on the Marcus electron transfer theory. The CH₂Cl₂ solvent effect on the absorption spectra of N,N′‐di‐1‐naphthyl‐N,N′‐diphenylbenzidine ( NPB ) was considered by polarizable continuum model (PCM). The results obtained for these compounds are in good agreement with the experimental values. These data show that the proposed compounds 1 and 2 (N,B‐di‐1‐naphthyl‐N,B‐diphenylbenzidine and Mes₂N[p‐4,4′‐biphenyl‐NPh(1‐naphthyl)]), are multifunctional and bifunctional materials similar to Mes₂B[p‐4,4′‐biphenyl‐NPh(1‐naphthyl)] ( BNPB ) and NPB , respectively. Copyright © 2009 John Wiley & Sons, Ltd.     

Study of field emission and dielectric properties of AlN films prepared by DC sputtering technique at different substrate temperatures

Nanocrystalline AlN thin films were prepared via DC sputtering technique at different substrate temperature. The crystal orientation and particle size of aluminum nitride thin films were investigated by XRD analysis. Study indicated that the sample contained pure phase hexagonal AlN nanoparticles with a single peak corresponding to the (100) planes. The peak at 665 cm⁻¹ in the FTIR spectrum of film was assigned to the LO phonon of hexagonal AlN. The particle size of the film, prepared at substrate temperature 200°C was about 9.5 nm, as investigated by atomic force microscope. Field emission study indicated that it can be used as a good field emitter. Turn-on field (E_to) of 15.02 V/μm was observed for the AlN films synthesized at substrate temperature 200°C. Dielectric constant of the AlN film was found nearly independent of frequencies in the measured frequency range 1 KHz to 1 MHz, i.e. in the audio frequency range. The values of dielectric constant (ε) were 10.07, 9.46 and 8.65 for the film prepared at 70°C, 150°C and 200°C, respectively, at frequency 1 KHz.     

CdSnO3-graphene nanocomposites: Ultrasonic synthesis using glucose as capping agent and characterization for electrochemical hydrogen storage

Nanoscale cadmium stannate (CdSnO₃) structures were productively synthesized via a facile and rapid sonochemical route using an eco-friendly capping agent of glucose. In order to optimize the size and structure of products, the various effective factors were inquired such as ultrasound waves, calcination temperature and solvent. The all samples were synthesized under ultrasonic probe for 30 min and different power (frequency) of 80 (24 KHz), 60 (18 KHz) and 40 W (12 KHz). The properties and characteristics of as-fabricated samples were examined by proficient techniques to identification the purity, structure, shape, optical, electrical and surface features. The ability of CdSnO₃ nanostructures and representative graphene based nanocomposites as potential hydrogen storage materials was considered by electrochemical methods. According to the obtained results, the CdSnO₃/graphene nanocomposites demonstrated higher hydrogen storage capacity than pristine CdSnO₃ nanostructures.     

Star-burst 1H-pyrazolo[3,4-b]quinoline as chromophore for light-emitting diodes and photovoltaic devices

The current–voltage and electroluminescent features of a novel star-burst 1H-pyrazolo[3,4-b]quinoline chromophore show that it has potential applications as a material for light-emitting diodes. The electroluminescence covers the white light spectral range from 420 nm up to 610 nm and achieves maximal value about 18 Cd/m² at biased voltage 23 V. The photovoltaic efficiency achieved was equal to about 0.08%.     

Negative differential resistance in thin-film electroluminescent emitters based on zinc sulfide

S-and N-type negative differential resistance (NDR) has been observed in thin-film electroluminescent emitters based on zinc sulfide doped with manganese, and conditions for its emergence have been identified. It has been found that when a negative half-wave of voltage is applied to the nontransparent top electrode, an S-type NDR with a region of decreasing current is observed, and when it is applied to the transparent bottom electrode, the NDR will be N-type. The emergence of NDR is due to space charges which form in the near-cathode and near-anode layers of the phosphor.     

P-Ga(1-x)InxAsyP1-y/InP材料的扩散长度测量

用激光扫描和电荧光衰减法测定了液相外延片p-Ga1-xInxAsyP1-y/InP(x=0.74,y=0.61)的少子扩散长度Im,并对这二种测试结果进行了比较,结果符合得很好。从这二种独立的实验结果获得表面复合速率S。S为6-7×104cm/s,扩散长度Lm为1.6～2.2μm。此外对p-Gε1-xInxAsyP1.y与InP衬底间的少数载流子行为进行了讨论。     

Dielectric behaviour of polycrystalline lead germanate

The dielectric behaviour of ferroelectric Lead Germanate (Pb₅Ge₃O₁₁) is reported in the frequency region 60 Hz-100 KHz for various particle size ranges from 40 to 300 μ m. The dielectric constant and conductivity decrease with decreasing particle size. The dielectric anomaly in small particle size unsintered samples disappears at lower frequencies, while at 100 KHz a broad diffuse phase transition is observed for all the samples, irrespective of particle size. A strong dielectric dispersion has been observed in the frequency range 60 Hz–100 KHz. The dielectric constant of sintered samples for the same panicle size range, and the dielectric anomaly which was absent at lower frequencies for unsintered samples re-appears in sintered samples. These results have been explained by assuming a high resistivity surface layer having a lower dielectric constant than the bulk at the boundary of particles.     

Fabrication of blue top-emitting organic light-emitting devices with highly saturated color

Blue top-emitting organic light-emitting devices (TOLEDs) with highly saturated color were developed by microcavity effect. The device structure studied was glass/reflective silver/indium-tin oxide (ITO)/organic electroluminescent stack/semi-transparent cathode (calcium/silver). By changing the thicknesses of ITO and organic layers in the microcavity structure device doped with p-bis(p-N, N-di-phenyl-aminostyryl)benzene (DSA-ph), highly saturated color with Commission Internationale de L'Eclairage chromaticity coordinates (CIE_x,y) of (0.14, 0.08) was obtained.     

Millimeter-Wave Signal Generation and Harmonic Upconversion Through PM-IM Conversion in Chirped Fiber Gratings

A novel technique for generating millimeter-wave signals through phase-to-intensity modulation conversion in chirped fiber gratings is proposed and demonstrated. Experimental results on generating a 28 G Hz signal using harmonics orders from 7th to 10th are provided. Excellent phase-noise performance (87 dBc Hz @ 10KHz) is demonstrated. It is also demonstrated that this technique may be efficiently used for harmonically upconverting intermediate frequency signals to the millimeter-wave band. Bit-error-rate measurements for different modulation format (QPSK MQAM) signals, which were upconverted employing the PM-IM conversion technique, show very good performance (< 10 ^{- 9}) and transparency to the modulation format.     

PT-PEK-c电光聚合物薄膜的厚度和介电性质

研制了新的PT-PEK-c电光聚合物薄膜材料,用准波导耦合m线方法测量了PT-PEK-c电光聚合物薄膜的厚度,并测量了该聚合物薄膜在1×10²Hz到1×10⁷Hz频率范围内的室温介电常数.测量结果为:厚度d=2.328±0.315μm,在10KHz下,介电常数ε_r＝4023±0.063,介电损耗tanδ＝0.003.     

The effect of space charge on the characteristics of ZnS thin-film electroluminescent devices

From experimental time dependences of the instantaneous brightness and the total current passing through a ZnS: Mn thin-film electroluminescent device, capacitance-voltage, charge-voltage, and current-voltage characteristics of the device are calculated. Conditions for negative differential resistance (NDR) of S and N types are found. An NDR mechanism that exploits the ionization and the recharge of deep donors and acceptors (zinc and sulfur vacancies) with the formation of space charge at the cathodic and anodic interfaces of the phosphor is suggested.     

有机薄膜电致发光器件载流子注入和传输性质的研究

制备了不同电极、不同厚度、以8-羟基喹啉铝螯合物(Alq3)为发光层的有机薄膜电致发光(TFEL)器件。分析了它们的电流密度-电压关系。不同阳极器件的电流变化很大,而改变阴极时电流密度的变化较小,说明电流以空穴为主。根据不同阴极器件的电致发光效率的比较,说明电子是决定器件电致发光效率的少数载流子。从不同厚度的器件的结果讨论了载流子的传输性质,认为在ITO/Alq3/Al器件中的电流符合陷阱限制的空间电荷电流.     

Efficient,long-life and Lambertian source of top-emitting white OLEDs using low-reflectivity molybdenum anode and co-doping technology

A top-emitting white organic electroluminescent device (TWOLED) established on low-reflectivity molybdenum (Mo) anode (R ∼ 58% in visible range) for alleviating the undesirable microcavity effect and achieving broad as well as similar emission spectra at different viewing angles has been demonstrated based on a dual-layer emitter composed of doped blue and yellow dopant in the same blue host. The electroluminescent (EL) efficiency and operational lifetime of TWOLED can be further enhanced by a factor of 1.2 and 3.4, respectively, when a co-doping technology of adding another blue dopant into the yellow emitter was incorporated. The enhanced efficiency is attributed to the improved energy transfer from blue host to yellow dopant by cascade process.     

The influence of adsorption phenomena on the impedance spectroscopy of an electrolytic cell

In this work we investigate the influence of the adsorption of ions on the impedance spectroscopy of an electrolytic cell. We consider that the positive and negative ions present in a dielectric liquid are adsorbed in the electrode surfaces with different adsorption energies. This difference in adsorption energies causes an additional plateaux in the limit of the low-frequency range of the real part of the impedance Z . In the same frequency range, a second minimum in the imaginary part of Z is predicted. The theory is illustrated with measurements of the impedance of an electrolytic solution in the frequency range from 10^-2Hz to 1KHz. A comparison between the present model and others from the literature to describe the experimental results is also made.     

High-brightness white light-emitting organic electroluminescent devices using poly(N-vinylcarbazole) as a hole-transporter

A white light-emitting organic electroluminescent (EL) device with multilayer thin-film structure, which shows high-brightness and high-efficiency, is demonstrated. The device structure of glass substrate/indium–tin oxide/poly(N-vinylcarbazole) (PVK)/1,1,4,4-tetraphenyl-1,3-butadiene/8-(quinolinolate)-aluminum (Alq) doped with 5,6,11,12-tetraphenylnaphthacene/Alq/Mg/Al was employed. The turn-on voltage is as low as 2.5 V. The white light emission covers a wide range of the visible region, and the Commission Internationale de 1' Eclairage coordinates of the emitted light are (0.319, 0.332) at 10 V. Bright white light, over 20 000 cd/m², was successfully obtained at about 18 V, and the maximum efficiency reaches to 1.24 lm/W at 9 V. The reasons of obtaining high level EL properties of our device have been discussed.     

窄脉冲外差体制CO2激光主动成像研究

根据大目标外差探测时发射功率P_T与距离R₂成正比规律的脉冲激光雷达方程和天线定理,利用国内最新研制的小型高重频电光调Q波导CO₂激光器,采用非线性扫描和激光器不等时发射技术,设计研制了一套窄脉冲外差体制CO₂激光主动成像系统,对室内20m处大目标实现了像元素64×32、成像速率10帧/s实时成像显示,图像质量较好,激光器峰值功率约为60W、脉冲重复频40KHz、前沿50ns、脉宽300ns.     

Effect of carbon nanotubes implantation on electrical properties of sisal fibre–epoxy composites

In this paper, the effects of carbon nanotubes (CNT) implantation and sisal fibre size on the electrical properties of sisal fibre-reinforced epoxy composites are reported. For this purpose, the epoxy composites reinforced with CNT-implanted sisal fibre of 5 mm and 10 mm lengths were prepared by hand moulding and samples characterized for their electrical properties, such as dielectric constant (ε′), dielectric dissipation factor (tan δ) and AC conductivity (σ_ac) at different temperatures and frequencies. It was observed that the dielectric constant increases with increase in temperature and decreases with increase in frequency from 500 Hz to 5 KHz. Interestingly, the sample having CNT-implanted sisal fibre of 5 mm length exhibited the highest value of dielectric constant than the one with length 10 mm. This is attributed to the increased surface area of sisal fibre and enhancement of the interfacial polarization. At a constant volume and a length of 5 mm of the fibres, the number of interfaces per unit volume element is high and results in a higher interfacial polarization. The interfaces decrease as the fibre length increases, and therefore, the value of ε′ decreases at 10 mm fibre length. The peak value of the dielectric constant decreases with increasing frequency. A continuous decrease in dissipation factor (tan δ) with increasing frequency for all samples was observed, while at lower temperatures, the values of tan δ remains approximately same. The AC conductivity for 5 mm length sisal epoxy composite and 10 mm length sisal fibre–epoxy composites is higher than that of pure epoxy at all the frequencies.     

Hole-transporting property of a chemically hybridized poly(vinylcarbazole)-fullerene

We synthesized a star copolymer of poly(vinylcarbazole) (PVK) branched from a fullerene (C₆₀) center, and investigated its optical absorption and photoluminescence properties. The chemically hybridized PVK-C₆₀ was then employed as a hole-transporting layer of the electroluminescent device with a poly(9,9^′-dihexylfluorene-2,7-divinylene-m-phenylenevinylene-stat-p-phenylenevinylene) (CPDHFPV) emitting layer. The ITO/PVK-C₆₀/CPDHFPV/LiF/Al device showed a strong electroluminescence quenching due to a direct contact of the PVK-C₆₀ and the CPDHFPV layers. In contrast, when an additional PVK layer was introduced between the two layers, the electroluminescence was largely enhanced. The emitted light power of the ITO/PVK-C₆₀/PVK/CPDHFPV/LiF/Al device was improved by 3 times compared with the device without the PVK-C₆₀ layer.     

Electrophysical properties of zinc-sulfide films obtained by high-frequency magnetron sputtering

The structure and electrophysical properties of zinc-sulfide films obtained by high-frequency magnetron sputtering are investigated. It is shown that the electrical strength of the films is no less than 10⁶ V·cnr^–1, the width of the forbidden band is 3.2–3.3 eV, and the refractive index is 1.8. The films are tested as electroluminescent layers in thin-film electroluminescent emitters. Luminescence with a brightness of 150 cd/m² is obtained.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 29–32, June, 1990.It remains to thank A. A. Miller for perfecting the electron-microscope investigations.     

Electroluminescence in ZnO-ZnSe systems

A study was made of electroluminescence in ZnO-ZnSe: Cu, Cl type luminophors as a function of band-gap of the resultant host lattice. By altering relative proportions of the oxide and the selenide, a number of samples were prepared, giving electroluminescent emission covering a wide spectral range from green to red. The emission spectrum shifts toward the red due to successive reduction of band gap of the combined system as the percentage amount of ZnSe is increased. The effect of firing atmosphere in the preparation of these luminophors is also described. Taking (0.5 ZnO, 0.5 ZnSe): Cu, Cl as a specific sample, different emission bands were recorded when excited by A.C. field and the ultraviolett radiations. The electroluminescent brightness of the sample follows the relationB=B ₀ e^?b/√¯v at normal frequencies and voltages.