High-temperature structure of C60

High-purity C₆₀ has been studied by in situ X-Ray Diffraction (XRD). Between 300 and 900 K, the volume thermal expansion coefficient is _v = 4.57(4) × 10^–5 K^–1 with no observable deviations from linearity. Recrystallization is activated atT 600 K, as observed by the fast ( < 5 s) and slow ( > 10 min) variations in low-index Bragg intensities. At lower temperatures, thermal desorption of molecular oxygen at 420 K is accompanied with a step-wise increase of the 111-Bragg reflection intensity, but with no measurable change of the lattice parameter. The twin fault density has first been determined using high-resolution XRD. The (winning probability is 0.8%. Crystallites show a ± 0.3° intrinsic mosaic spread. Mechanical milling in acetone and in air increases the twinning probability to 1.8 and 3.1%, respectively.     

Selective imaging of self-assembled monolayers by tunneling microscopy

The properties of thin organic films offer many challenging opportunities for science and technology. A crucial requirement for the advancement of molecular film technology is the selective characterization and modification on an atomic level. Local proximal probes like Scanning Tunneling Microscopy (STM) or Atomic Force Microscopy (AFM) bear certainly the potential for this purpose. So far, however, mainly adsorbed organic molecules lying flat on a smooth substrate have been imaged with near atomic resolution. Here, we demonstrate the ability of STM to selectively image self-assembled monolayers of long-chain molecules (hexanethiol) oriented upright on the substrate Au(111) with molecular resolution. Upon proper choice of the tunneling parameters we can image the molecular head-group anchored at the substrate and/or the molecular tail group.     

Time domain capacitance spectroscopy of tunneling electrons in the two-dimensional electron gas

We have developed a technique capable of measuring the tunneling current into both localized and conducting states in a 2D electron system (2DES). The method yields I-V characteristics for tunneling with no distortions arising from low 2D in-plane conductivity. We have used the technique to determine the pseudogap energy spectrum for electron tunneling into and out of a 2D system and, further, we have demonstrated that such tunneling measurements reveal spin relaxation times within the 2DEG. Pseudogap: In a 2DEG in perpendicular magnetic field, a pseudogap develops in the tunneling density of states at the Fermi energy. We resolve a linear energy dependence of this pseudogap at low excitations. The slopes of this linear gap are strongly field dependent. No existing theory predicts the observed behavior. Spin relaxation: We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2DES. For most 2D Landau level filling factors, we find that electrons tunnel with a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (ν=1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.     

Modeling of electron tunneling times in asymmetric double quantum wells

A scattering process modeled by an imaginary potential V _I in the wide well of an asymmetric double quantum well structure (DQWS) is used to model the electron tunneling from the narrow well. Taking V _I –5 meV, the ground resonant level lifetimes of the narrow well in the DQWS are in quantitative agreement with the experimental resonance and non-resonance tunneling times. The corresponding scattering time 66 fs is much faster than the intersubband scattering time of LO-photon emission.     

Detection of surface acoustic waves by scanning tunneling microscopy

A new method for the investigation of ultrasonic waves on surfaces of solids based on scanning tunneling microscopy is presented. A sinusoidal high frequency signal is added to the tip voltage. Hence the tunneling current contains a component whose frequency is the difference of the frequencies of the acoustic wave field and the ac tip voltage. Amplitude and phase of this component carry the full information about the wave field.     

Resonant tunneling,eigenvalue and energy band calculation for potential and periodic potential structures

Recursion formulae for the reflection and the transmission probability amplitudes and the eigenvalue equation for multistep potential structures are derived. Using the recursion relations, a dispersion equation for periodic potential structures is presented. Some numerical results for the transmission probability of a double barrier structure with scattering centers, the lifetime of the quasi-bound state in a single quantum well with an applied field, and the miniband of a periodic potential structure are presented.     

Investigation of heteroepitaxial diamond films by atomic force and scanning tunneling microscopy

We report on Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) investigations on chemical vapour deposited heteroepitaxial diamond films. Besides the good macroscopic crystal morphology a statistical tilt up to ±5.2° of the oriented crystallites has been found relative to the silicon substrates. By optimizing the process conditions, however, the crystal tilt of the films can be reduced, resulting in an improved film perfection. On crystallite (001)-surfaces a substructure of growth facets or islands has been found and high resolution STM images have established a 2×1 surface reconstruction on these growth facets. AFM and SEM were applied to study the morphology of diamond nuclei initially grown on the silicon substrate. Strong island like (Volmer-Weber) growth has been found, with a nucleus height to diameter ratio of 1:1. While the islands are growing in size with respect to time of nucleation, its aspect ratio does not change, due to the high surface free energy of the diamond relative to silicon.     

Confining surface state electrons in less than two dimensions: A spectroscopic study

We observe the partial confinement of the twodimensional electron gas of ans-p-like surface state by the regular step distribution of several vicinal Cu(111) surfaces. The spatial distribution of the surface state is visualized by scanning tunneling microscopy. Local tunneling spectroscopy reveals a shift of the maximum of the density of states of the surface state towards the Fermi level, which correlates with the size of the terraces. The average shift is also measured by angle-resolved photoemission and found to be consistent with a one-dimensional Kronig-Penney model.     

Itinerant nature of atom-magnetization excitation by tunneling electrons

We have performed single-atom magnetization curve (SAMC) measurements and inelastic scanning tunneling spectroscopy (ISTS) on individual Fe atoms on a Cu(111) surface. The SAMCs show a broad distribution of magnetic moments with 3.5 μB being the mean value. ISTS reveals a magnetization excitation with a lifetime of 200 fsec which decreases by a factor of 2 upon application of a magnetic field of 12 T. The experimental observations are quantitatively explained by the decay of the magnetization excitation into Stoner modes of the itinerant electron system as shown by newly developed theoretical modeling.     

Resonant tunneling in electrically biased multibarrier systems

The effect of a uniform electric field on the resonant tunneling across multibarrier systems (GaAs/Al_xGa_1−xAs and GaN/Al_xGa_1−xN) is exhaustively explored by a computational model using exact Airy function formalism and the transfer-matrix technique. The numerical computation takes care of the common problems of numerical inefficiency and overflow associated with the Airy functions for low-applied voltages. The model presents the study of both the field-free and field-dependent tunneling across multibarrier systems using a single formalism. The current-voltage characteristics, studied for the multibarrier systems with different number of barriers, exhibit all the experimentally observed features like resonant peaks, negative differential conductivity regimes, etc. Our results have both qualitative and quantitative agreement with the reported experimental findings.     

Investigation of the (111) surface of P-doped Si by scanning tunneling microscopy

Received: 27 March 1998     

Ion scattering spectroscopy and scanning tunneling microscopy: A powerful combination for surface structure analysis

Low-energy ion backscattering and scanning tunneling microscopy (STM) have been used in combination to get better insight into the field of surface crystallography. The synergic effectiveness resulting from the complementing character of the two methods has been exemplified at clean NiAl(111) and for oxygen and nitrogen adsorption on Cu(110). The position of the atom cores is accessible by the low-energy noble gas impact collision ion scattering spectroscopy with neutral detection (NICISS). As a technique averaging over a macroscopic area of the sample, NICISS is better suited to supply information on features of completely developed phases, either on clean or adsorbate saturated surfaces. Additional information, on the other hand, can be gained by scanning tunneling microscopy (STM), which as a powerful local probe may be used to image surfaces with atomic resolution and to monitor defects, steps and the growth kinetics of e.g. adsorption-induced phase changes.     

Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer

MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at low and high annealing temperatures (T_a), respectively. The TMR ratio remains inverted up to T_a=300 °C and it becomes normal around T_a=350 °C. The exchange bias of FeMn disappears at high T_a. The sign reversal of the TMR ratio is mainly attributed to the disappearance of the exchange bias due to manganese diffusion during the annealing process.     

Photon emission from adsorbed C60 molecules with sub-nanometer lateral resolution

We present the first experimental demonstration of spatially resolved photon emission of individual molecules on a surface. A scanning tunneling microscope (STM) was used as a local electron source to excite photon emission from hexagonal arrays of C₆₀ molecules on Au(110) surfaces. Specifically, we show that in maps of photon emission intensities, C₆₀ fullerenes appear as arrays of individual light emitters 4 Å in diameter and separated by 10 Å. Comparison with simultaneously recorded STM images reveals, that most intense emission is detected when the STM tip is centered above a molecule. The results demonstrate the highest spatial resolution of light emission to date using a scanning probe technique.     

Chemical-specific imaging of multicomponent metal surfaces on the nanometer scale by scanning tunneling spectroscopy

The topographic and chemical surface structure of a submonolayer iron film on a W(110) substrate has been studied by combined scanning tunneling microscopy and spectroscopy. Local tunneling spectra revealed a pronounced difference in the electronic structure between nanometer-scale iron islands of monolayer height and the bare W(110) substrate. In particular, a pronounced empty-state peak at 0.2 eV above the Fermi level has been identified for the iron islands. Based on the pronounced difference in the local tunneling spectra measured above the iron islands and the tungsten substrate, chemical-specific imaging was achieved by performing spatially resolved measurements of the differential tunneling conductivitydl/dU (x, y) at selected sample bias voltages.     

An artefact in scanning tunneling microscopy images of highly oriented pyrolytic graphite

An artefact with a structure that appears as an ordered array of chains, several 1000 Å long and with distances of between 10 Å and 30 Å in STM images of HOPG is reported. The artefact, which emerges from a too low point density in the scanning grid during data aquisition in the scanning tunneling microscope, is explained using the atomically resolved image, the orientation of the substrate in the STM, the sequential character of data acquisition in scanning tunneling microscopy together with the limited number of data points for the reconstruction of STM images and related image-processing problems, and the specific noise spectrum of the tunneling current. The identification of the artefact is verified by a computer simulation of the STM images, which reproduces the experimental data in detail.     

Atomic scale characterization of oxygen adsorbates on Al(111) by scanning tunneling microscopy

We present atomic scale STM pictures of clean and oxygen containing Al(111) surfaces. Little influence of the surface oxygen on the topography of the surfaces is found. Three different oxygen species can be distinguished. One of them is associated with adsorbed oxygen and found to grow in small islands upon adsorption at 300 K. Characteristic hexagonal nuclei, created upon annealing of a dilute oxygen adlayer, represent the second one. By comparison with existing spectroscopic data these are assigned to nuclei of a surface oxide.     

Coherent electron tunneling in triple coupled quantum wells

We present a numerical study of coherent electron tunneling in a triple coupled quantum well system. The evolution of the charge density is described in detail. In this heterostructure the electron will oscillate between the three wells, giving rise to a new type of oscillating luminescence signal. An experiment is proposed.     

A scanning tunneling microscopy study of the adsorption of Xe on Pt(111) up to one monolayer

The adsorption of Xe on Pt(111) has been investigated from the arrival of the very first atoms up to completion of the monolayer using a variable-temperature Scanning Tunneling Microscope (STM). Surprisingly, in the initial stages of the adsorption Xe preferentially binds to a low coordination site, theupper edge of the platinum steps. The strong binding to these sites leads to a local repulsive interaction with further Xe atoms. Therefore, the Xe atoms located at the upper edge of the steps do not serve as nuclei for 2D Xe islands, which, instead, form on the terraces and at thelower edges of the platinum steps. Only during completion of the monolayer do these islands make contact with the atoms adsorbed at the beginning in the upper-edge positions. The full monolayer exhibits the Hexagonal Incommensurate Rotated (HIR) phase already known from earlier helium-diffraction experiments.     

The multiple-image interactions and the mean-barrier approximation in MOM and MVM tunneling junctions

The effect of the multiple image interactions on theI–V characteristics and the reliability of the mean barrier approximation in calculating the current in MOM and MVM tunneling junctions are critically examined. It is demonstrated that the continued use of the uncorrected form of Simmons' original multiple-image force interaction in the analysis of tunneling junctions can lead to serious errors in both the current and the dynamic resistance. An extensive numerical analysis of planar junctions including the image potential suggests that the basic mean barrier approximation formulated by Simmons is essentially a thick barrier approximation. It also is shown that the conventional mean barrier approximation is a relatively poor approximation for the tunneling barriers of interest, and that it is not possible to establish a reliable a priori estimate of its range of validity.This research was supported in part by the NATO Research Grants Program, Grant No. 1902, Scientific Affairs Division, Brussels, Belgium