Raman E 1, E 1+Δ1 resonance in unstrained germanium quantum dots

Raman scattering by optical phonons in unstrained Ge quantum dots obtained in GaAs/ZnSe/Ge/ZnSe structures was studied using molecular beam epitaxy. A shift in the E ₁, E ₁+Δ1 resonance energy due to the quantization of the spectrum of electron and hole states in quantum dots was observed. The properties observed were explained with the use of a simplest model of localization with allowance for the spectrum of Ge electron states.     

Vibrational density of states of hen egg white lysozyme

The resonant Raman scattering in GeSi/Si structures with GeSi quantum dots has been analyzed. These structures were formed at various temperatures in the process of molecular-beam epitaxy. It has been shown that Raman scattering spectra recorded near resonances with the E₀ and E₁ electronic transitions exhibit the lines of Ge optical phonons whose frequencies differ significantly from the corresponding values in bulk germanium. In the structures grown at low temperatures (300–400°C), the phonon frequency decreases with increasing excitation energy. This behavior is attributed to Raman scattering, which is sensitive to the size of quantum dots, and shows that quantum dots are inhomogeneous in size. In the structures grown at a higher temperature (500°C), the opposite dependence of the frequency of Ge phonons on excitation energy is observed. This behavior is attributed to the competitive effect of internal mechanical stresses in quantum dots, the localization of optical photons, and the mixing of Ge and Si atoms in structures with a bimodal size distribution of quantum dots.     

Relative Raman cross sections and deformation potentials of several semiconductors at the E1 resonance

The relative cross sections for one-phonon scattering at the E₁ resonance have been measured for several cubic semiconductors. Using the dielectric theory of the Raman tensor and the values of the real and imaginary parts of the dielectric constant determined from optical measurements we are able to obtain relative values for the intraband deformation potential of the valence bands d⁵_3,0. Taking d⁵_3,0 = 1 for Ge we find the values 2.4, 1.0, 0.42, 0.64 and 1.1 for Si, GaAs, Mg₂Si, Mg₂Ge, and Mg₂Sn, respectively.     

The role of interdiffusion and spatial confinement in the formation of resonant raman spectra of Ge/Si(100) heterostructures with quantum-dot arrays

The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band Λ₃ and the conduction band Λ₁ (the E ₁ and E ₁ + Δ₁ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of ≈10 Å. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E ₁ and E ₁ + Δ₁ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^?1 with a decrease in the thickness of the Ge layer from 10 to 6 Å due to the spatial-confinement effect. The optimum thickness of the Ge layer for which the size dispersion of quantum dots is minimum is determined.     

Resonant raman scattering at the E1 energy gap of semiconductor crystals

We present a discussion of resonant Raman scattering by optical phonons at the E₁ energy gap of group IV and groups III–V compound semiconductor crystals (e.g., Ge and InSb). For allowed scattering by TO and LO phonons, the q-dependent “double resonant” two-band calculation of the Raman tensor may display destructive interference effects when the intermediate electron-hole pairs are uncorrelated. We also discuss the Franz-Keldysh mechanism of resonant electric field induced Raman scattering by LO phonons. The double resonance terms due to this mechanism will, for large electric fields, broaden and have its largest resonance enhancement at the energy gap.     

Resonant Raman scattering by plasmons in n-type Ge

We have measured the Raman efficiency for plasmon scattering in n-type Ge as a function of laser excitation frequency in the range of the E₁ and E₁+Δ₁ optical gaps (2.1–2.5 eV). Our results can be explained by a mechanism involving the macroscopic electric field that accompanies the plasma oscillation in a manner similar to that responsible for Fröhlich-interaction-induced forbidden LO-phonon resonances in polar semiconductors plus some contribution of the standard cdf mechanism for scattering by plasmons.     

Triple differential cross section for angle,atomic number and energy (or angular momentum transfer) calculated for the 280MeV40Ar+58Ni (or 365MeV63Cu+197Au) system in a simple model

Highly excited levels of³³S populated by α-particle capture in²⁹Si have been investigated forE _α=1.962 MeV to 4.287 MeV. Excitation curves measured with Ge(Li) and BF₃ detectors are reported. More than fifty resonances can be identified with levels in³³S. (α, γ) angular distributions measured on five strong resonances have yieldedJ ^π values 1/2+, 3/2 +, 5/2?, 5/2?, 5/2? and 3/2+ respectively, for theE _x =10.054, 10.466, 10.523, 10.721, 10.758 and 10.776 MeV levels in³³S. Elastic scattering experiments have been performed and theJ ^π assignments are found to be consistent with thel-values inferred from the elastic scattering data. Decay schemes from the above³³S levels have been proposed. A new level at 9.245 MeV is also suggested and theJ ^π values for the 4.425 and 2.87 MeV states are shown to be consistent with 7/2+ and 3/2+ assignment, respectively. Nuclear Reactions²⁹Si(α, γ) and²⁹Si(α, α),E _α=1.962-4.287 MeV. Measured relative σ(E). DeducedJ ^π andE _γ of³³S levels. New³³S level atE _x =9.245 MeV. Enriched targets.     

Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge ion implanted SiO2 films

Optical transitions in Ge nanocrystals formed by high-pressure annealing of the Ge⁺ ion implanted SiO₂ films have been studied by Raman and photoluminescence spectroscopy. It has been found that the E₁,E₁+Δ₁ Raman resonance shift observed from the unstrained and hydrostatically compressed nanocrystals corresponds to the quantization of the electron-hole state spectrum of the Ge band. It has also been established that the appearance of a green photoluminescence band centered at 420-520 nm correlates with the formation of strained nanocrystals. Comparisons of the PL data with HRTEM results have been made, which suggest that the green PL arises from strained Ge nanocrystals of a radius of less than 5 nm. The direct electron-hole recombination at Γ is discussed as a possible origin of the observed photoluminescence band.     

Disorder broadening of E2 optical spectra in GeSi alloys

he E₂ transitions in GeSi alloys are analyzed quantitatively using low-field electroreflectance data. The model of M₁ saddle point transitions is found to be in fair agreement with differentiated electroreflectance spectra in the whole composttion range. The broadening parameter of pure Ge and Si increases by 0.035 eV in the alloy with equal content of both components.     

The peculiarities of the low-energy ion scattering by polycrystal targets

In the present work, experimental and computer simulation studies of low-energy (E₀ = 80-500 eV) Cs⁺ ions scattering on Ta, W, Re target surfaces and K⁺ ions scattering on Ti, V, Cr target surfaces have been performed for more accurate definition of mechanism of scattering, with a purpose of evaluation of an opportunity of use of slow ions scattering as a tool of surface layers analysis. The choice of the targets was based on the fact that the ratios of atomic masses of target atoms and ions μ = m₂/m₁ were almost the same for all cases considered and greater than 1 (direct mass ratio) however, the difference of binding energies of target atoms in the cases of Cs⁺ and K⁺ scattering was almost twice as much. It has been noticed that the dependencies of the relative energy retained by scattering ions at the maximum of energy distribution versus the initial energy E_m/E₀ (E₀) have a similar shape in all cases. The relative energy retained by scattering ions increases while the initial energy of incidence ions decreases. The curves are placed above each other relative to the binding energies of target atoms, to show what this says about the influence of binding energy on a process of scattering of low-energy ions. The correlation between value of energy change maintained by an ion for different values of E₀ in the case of scattering by targets with different masses of atoms and its binding energies is experimentally established. The contrary behavior of the E_m/E₀ (E₀) dependencies concerning the target atom binding energy quantity E_b for cases with direct (μ > 1) and inverse (μ < 1) mass ratio of colliding particles is established. The comparison of experimental energy distributions with calculated histograms shows that the binary collision approximation cannot elucidate the abnormally great shift in the maxima of relative energy distributions towards greater energy retained by scattering ions.     

A study of the 35Cl(p, γ)36Ar reaction and the energy levels of 36Ar

Proton energies and strengths of (p,γ) and (p, p₁) resonances of the ³⁵Cl + p reaction were determined for E_p = 0.4?3.0 MeV and 1.9?3.0 MeV, respectively. The γ-decay of 84 resonances was studied with a 40 cm³ Ge(Li) detector. The branching ratios and excitation energies of 38 bound levels were determined. A new bound level was observed at E_x = 8472.0 ± 1.0 keV. Doppler-shift attenuation experiments yielded lifetimes of 20 bound levels. Spins and/or parities for bound levels and resonances were derived on the basis of observed transition strengths.     

The level structure of69Ge

Theγ-ray decay of the states in⁶⁹Ge has been studied using the reaction⁶⁶Zn(α, nγ)⁶⁹Ge atE _α =13 and 19 MeV. The level scheme and spin assignments were established by means of coincidence measurements, angular distributions and excitation functions. 27 new levels could be found or confirmed. It is suggested that⁶⁹Ge is a further example for the weak coupling phenomenon in the medium mass nuclei. Nuclear Reactions: ⁶⁶Zn(α, nγ)⁶⁹Ge,E _α =13–22 MeV, measuredE _γ ,I _γ ,I _γ (θ),E _γ =f(E _α ),γ-γ coincidences,⁶⁹Ge deduced levels,J, enriched target.     

Elastic scattering and fusion cross sections of 13C+13C

The ¹³C+¹³C total fusion cross section has been determined in the range 3.26⩽E_c.m.⩽8.0 MeV using Ge(Li) detector measurements of low-lying transitions in the residual nuclei and a statistical model calculation of excited state populations. The six most abundantly produced residual nuclei have been observed and their yields are given. To constrain the parameters in fusion models for these reactions, we have also taken elastic scattering data at θ_c.m.=60°, 70°, 80°, and 90° for 4.5⩽E_c.m.⩽8.5 MeV, as well as angular distributions at E_c.m.=7.0 and 8.0 MeV. The IWBC model and an optical model with a “shallow” potential have been used for parametrizing the nucleus-nucleus interaction.     

Effect of carrier concentration on the reflectivity spectrum of Ge and InSb

We have measured at 5 K the derivative spectra (1/R) dR/dE around the E₁ and E₁ + Δ₁ structures, of Ge and InSb with different impurity concentrations. In the more highly doped samples, the peaks are broadened and shifted slightly to lower frequencies. The change in the value of (1/R) dR/dE is much larger than recently predicted by Seraphin and Aspnes, based on the surface field effect. Different possibilities for the effect are discussed. Wavelength modulation measurements on samples with an applied surface electric field have shown no difference.     

Soft mode behavior in PbTi1−xZbxO3

Raman scattering experiments were performed in the system PbTi_1?xZr_xO₃. The substitution of Ti by Zr leads to a softening of the lowest E(TO) mode in PbTiO₃, and to the creation of an additional mode, which appears to interact with the soft mode.     

Resonant Raman scattering in germanium

We have studied the spectral dependence of the first order Raman scattering cross section of Ge at room and liquid nitrogen temperatures in the energy region containing the E₁ and E₁ + Δ₁ optical gaps. This region was covered by a fine mesh of points obtained from the discrete lines of three gas lasers and a cw continuously tunable dye laser. Only one resonant peak was observed, as opposed to the two peaks that characterise the absorption and reflection spectra in this region. The shape of this resonance peak can be explained as due to the changes in the electronic polarizability produced by phonon-induced wave function mixing of the spin-orbit split Λ valence band doublet. The observed temperature shift in the resonant energy is much smaller than the one predicted from the known shifts of the optical gaps with temperature. Furthermore the resonant peak at room temperature appears shifted to higher energies when compared with the theoretical peak calculated from the room temperature optical constants. The resonant Raman peak appears to shift with increasing temperature by the full thermal expansion effect plus only a fraction of the electron-phonon interaction shift seen in the optical constants.     

79Se investigated by the reaction76Ge(α, nγ)

⁷⁹Se has been investigated by the reaction⁷⁶Ge(α, nγ). Gamma excitation functions (E _{α=10?15 MeV)}, gamma angular distributions and gamma-gamma coincidences (both at (E _{α=12 MeV)}, have been taken. A level scheme has been established, spins and partities have been assigned. The results are compared with rotational bands in neighbouring odd Se isotopes. Nuclear reaction⁷⁶Ge(α, nγ)E _α =12 MeV; measuredE _γ,I _γ,γ-γ coincidences,γ-angular distribution,γ-excitation function.⁷⁹Se deduced levels,J, π. Enriched target, Ge(Li).     

The decay of isoscalar giant resonances in 24Mg and 40Ca

In this paper we present data on the charged-particle decay of the isoscalar 2⁺ strength between 10 and 20 MeV excitation energy (E_x) in ²⁴Mg and ⁴⁰Ca. The isoscalar strength was excited by inelastic scattering of 120MeV α-particles at 14° and 12.5° for ²⁴Mg and ⁴⁰Ca, respectively. The charged particles originating from the decay were detected in coincidence with the α′ particles at several angles in the scattering plane. J^π assignments of the decaying states were made on the basis of the angular correlation pattern of the α₀ decay to the ground state of ²⁰Ne and ³⁶Ar, respectively, using a DWBA calculation for the m-state population of the decaying state.For ⁴⁰Ca, about 40% of the E2 EWSR is found to be located in the interval E_x = 13.5 ± 1.5 MeV, which is similar to what has been found from previous inelastic scattering experiments at E_x = 18 ± 2 MeV, but much more than such experiments located in the region E_x = 12–15 MeV. The difference for the region E_x < 16 MeV is due to the fact that from our α₀ angular correlation pattern we conclude that virtually no continuum is excited in the (α, α′) process up to E_x = 16 MeV while all previous inelastic hadron scattering experiments assumed such a continuum to be present. The E2 strength distribution for ⁴⁰Ca thus obtained is very different from what previous theoretical calculations predict. For ²⁴Mg about 30% of the E2 EWSR is present in the interval 12.5 ? E_x ? experiments. 16.5 MeV which again is about twice as much as deduced from previous inelastic scattering The observed branching ratios are compared with calculated ones assuming statistical decay. Reasonable agreement was obtained for ⁴⁰Ca, but for ²⁴Mg especially the α₀-decay branch and to a lesser extent also the p₁ one are much stronger than the statistical calculations predict, indicating that especially the α₀ decay occurs mainly in a non-statistical way.A similar conclusion can be drawn from the behaviour of the forward-backward asymmetry in the angular correlations of the decay particles as a function of the excitation energy FBA(E_x). For ⁴⁰Ca, FBA(E_x) for all decay channels increases smoothly on the average once E_x is above a well-defined threshold, which is due to the onset of knock-out processes. For ²⁴Mg, however, the FBA(E_x) for the α₀ shows a large fluctuation as a function of E_x, indicating an interference process between semi-direct decay and knock-out processes.     

Line shape and excitation strength of the first excited state in9Be

The line shape and the excitation strength of the very weak first excited J ^π =1/2⁺ state at E_x=1.684 MeV in Zeitschrift für Physik Zeitschrift für Physik⁹Be has been investigated with high-resolution inelastic electron scattering at E₀=45 and 49 MeV and scattering angles θ=105°, 117°, 129° and 165°, and with high-resolution inelastic proton scattering at E₀=13MeV and θ=15° and 18°. Due to lying just above the neutron threshold the level has a strongly asymmetric line shape which in both experiments can be described consistently with a Breit-Wigner expression modified on the low energy side by the threshold behaviour of the cross section. The resonance energy is E_R=1.684 ± 0.007 MeV and the width T=217± 10 keV in thec.m. system. A single particle potential model calculation reproduces the line shape and the resonance parameters fairly well. In addition, the inelastic electron scattering form factor has been measured. In the range of momentum transfersq =0.24-0.46 fm^?1 it is dominated by a 0p_3/2→ 1s_1/2 particle-hole transition. The transition is mainly longitudinal and of isoscalar nature with a strength of B (E1)↑ =0.027 + 0.002 e² fm², but a small M2 contribution ofB(M2)↑=8.8 ±1.5 μ _N ² fm² has also been detected.     

Light emission at the E1 and E1+Δ1 gaps in heavily doped p-type Ge and GaAs

We report the observation in heavily doped p-type germanium (N_h ≥ 10¹⁸cm^?3) of two weak light emission bands centered at the energies of the E₁ and E₁+Δ₁ interband gaps (2.22 and 2.42 eV at 80 K). These bands, which are 100% polarized, are found only for excitation with laser frequencies slightly above the gaps. We attribute them to photon scattering by inter-valence-band excitations of the holes associated with the heavy doping. The fact that the emission bands do not shift with the exciting laser frequency is assigned to a strong resonance enhancement of this scattering near the E₁ and E₁+Δ₁ gaps. We have also observed the corresponding light emission at the E₁ gap (3.0 eV) in p-type GaAs.