两种偶氮化合物主客体掺杂薄膜的全光极化特性研究

利用旋涂法制备了两种PMMA-偶氮化合物主客体掺杂型薄膜,并对其进行全光极化,采用紫外-可见吸收谱和二次谐波产生的方法研究了薄膜的二阶非线性光学特性.实验结果表明,4′-Nitro-4-dimethylaminoazobenzene的二阶非线性光学系数d33＝6.89×10-1 pm/V,4′-Iodo-4-dimethylaminoazobenzene的d33＝7.77×10-2 pm/V;这两种薄膜在全光极化过程中二次谐波产生(SHG)强度随膜厚的变化规律以及极化饱和后的弛豫情况不相同.这些现象可从理论上解释为偶氮化合物的取代基不同而导致偶氮分子的偶极性和偶氮分子与基质间相互作用不同所产生的影响.     

基于透射光谱确定溶胶凝胶ZrO2薄膜的光学常数

基于溶胶凝胶ZrO2薄膜的紫外/可见/近红外透射实验光谱,采用Swanepoel方法结合Wemple-DiDomenico色散模型,方便地导出了ZrO2薄膜在200-1200 nm波长范围内的光学常数,包括折射率、色散常数、膜层厚度、吸收系数及能量带隙.研究发现,溶胶凝胶ZrO2薄膜具有高折射率(1.63-1.93,测试波长为632.8 nm)、低吸收和直接能量带隙(4.97-5.63 eV) 等光学特性,而且其光学常数对薄膜制备过程中的重要工艺参数--膜层后处理温度表现出强烈的依赖性.此外,在膜层的弱吸收和中等吸收光谱区域内,计算得到的折射率色散曲线与分光光度法的测试结果基本符合,说明本实验中所建立的计算方法在确定溶胶凝胶ZrO2薄膜光学常数方面的可靠性.     

掺半花菁二氧化硅薄膜光学二次谐波产生

报道了用溶胶 凝胶技术制备掺入半花菁染料的二氧化硅薄膜．在不加电场极化条件下，由半花菁分子的自取向导致光学二次谐波产生，定量测得厚度为50nm薄膜的二阶非线性系数χ^（2）为6.6pm/V，并初步研究了半花菁分子自取向的机理 关键词：     

椭偏光谱法研究溶胶-凝胶TiO2薄膜的光学常数

以钛酸丁酯为前驱体,采用溶胶-凝胶工艺成功制备了TiO₂薄膜.利用反射式椭圆偏振光谱仪测量了薄膜的椭偏参量Ψ和Δ,并用Cauchy模型对椭偏参数进行数据拟合,得到了薄膜的厚度和光学常数在380—800 nm的色散关系.用分光光度计测量了薄膜的反射率,并用干涉法计算薄膜的厚度;使用原子力显微镜观测了薄膜的表面微结构,分析讨论了不同退火温度处理的薄膜微结构与光学常数之间的关系.研究结果表明,Cauchy模型能较好地符合溶胶-凝胶TiO₂薄 关键词： 光学常数 2薄膜')" href="#">TiO₂薄膜 溶胶-凝胶 椭圆偏振     

溶胶凝胶制备氧化钒薄膜的生长机理及光电特性

采用溶胶凝胶法, 在不同的退火温度下制备了不同的氧化钒薄膜. 利用扫描电子显微镜、X射线衍射仪、高阻仪、紫外-可见分光光度计和傅里叶红外光谱仪等, 对薄膜的形貌、晶态、电学和光学特性进行了分析. 结果表明, 溶胶凝胶法获取V₂O₅薄膜的最佳退火温度为430 ℃, 低于此温度不利于使有机溶剂充分分解, 高于此温度则V–O键发生裂解、形成更多的低价态氧化钒. 本文制备的氧化钒薄膜具有较高的电阻温度系数和光吸收率, 适合应用在非制冷红外探测器中. 本文揭示了溶胶凝胶法制备氧化钒薄膜的生长机理. 关键词： 氧化钒薄膜 溶胶凝胶 光电特性 生长机理     

DR1掺杂复合凝胶玻璃光学二阶非线性效应的研究

对分散红1(disperse red 1,缩写为DR1)掺杂聚甲基丙烯酸甲酯(PMMA)/凝胶玻璃复合材料的光学二阶非线性及其热稳定性进行了研究.分析了实时极化二次谐波产生(SHG)的动态过程及影响光学二阶非线性的因素.同时对影响DR1掺杂复合凝胶玻璃材料的光学二阶非线性强度的因素进行了分析. 关键词：     

稀土钇、镧掺杂TiO2薄膜的拉曼谱分析

采用溶胶-凝胶法在石英玻璃衬底上用旋涂法制备了未掺杂、掺杂钇和掺杂镧的TiO₂薄膜样品,对样品在700—1100 ℃范围内进行退火处理,并对样品的拉曼光谱进行了分析.分析表明:随着退火温度的升高,未掺杂TiO₂薄膜发生了从锐钛矿相经混相最终向金红石相的转换,掺杂钇和掺杂镧对TiO₂薄膜的晶相转换起阻碍作用,掺杂镧的阻碍作用更强;稀土掺杂能使TiO₂薄膜晶粒细化,并使晶粒内部应力增大从而阻碍晶格振动,掺杂镧比掺杂钇的效果 关键词： 2薄膜')" href="#">TiO₂薄膜 稀土掺杂 拉曼光谱 溶胶-凝胶     

处理温度及CdS量子点对Eu3+掺杂SiO2干凝胶光致发光性质的影响

以正硅酸乙酯为原料,采用溶胶-凝胶法制备了Eu3+掺杂的SiO2凝胶和Eu3+/CdS量子点共掺杂的 SiO2干凝胶.考察了不同温度下处理2h对Eu3掺杂SiO2凝胶发光性质的影响.在40℃干燥的样品荧光光 谱中,没有出现614 nm发射峰,455 nm处的峰也很弱;随着干燥处理温度的升高,455nm和614 nm...     

PMMA/凝胶玻璃复合材料作为非线性有机分子掺杂基质的研究

对分散红1（DR1）掺杂聚甲基丙烯酸甲酯（PMMA）／凝胶玻璃复合材料的光学二阶非线笥及其热稳定性进行了研究。结果表明,PMMA／凝胶玻璃作为一种有机／无机复合材料,是介于胶玻璃和PMMA之间的一种非线性有机分子掺杂基质。随复合材料中凝胶玻璃含量增多,所制备的非线性材料的热稳定性能变好。对非线性和热稳定性的折衷考虑,获得了制备光学二阶非线笥基质材料先体PMMA和正硅酸乙酯（TEOS）的最佳混合比例。     

复合纳米光学变色薄膜

用热蒸发和磁控溅射的物理镀膜方法和溶胶-凝胶化学涂布的方法相结合制备了有机和无机复合纳米光学变色薄膜。光学变色薄膜为多层薄膜,当有自然光进入光学变色薄膜时,随着入射光和视角的变化在薄膜上可以看到明显的光变色效果。这种薄膜可以单独或与油墨组合作为一种新颖的防伪材料。根据多层复合膜光干涉原理经设计和计算确定薄膜为PET／Cr／介质／Al膜系结构。介质分别是有机高聚物和SiO2。SiO2是多孔纳米材料,用溶胶-凝胶方法制备,通过调节催化和凝胶的方式和条件,折射率在1.15～1．45之间。介绍了制作方法和薄膜特性。     

掺半花菁二氧化硅薄膜二阶光学非线性与薄膜结构的动态变化关系

用溶胶－凝胶技术制备的掺入半花菁染料的二氧化硅薄膜在不加电场极化条件下，由半花菁分子的自取向导致光学二次谐波产生，定量测得厚度为５０ｎｍ薄膜的二阶非线性系数ｘ（２）为６．６ｐｍ／Ｖ，着重研究了薄膜稳定前的溶剂挥发过程中，膜结构的变化以及相应二阶光学非线性的变化，在成膜后的四个小时中，质子化半花菁逐步转化为单体和聚集体态，同时，光学二次谐波信号也不断增大，还观察到在这一过程中出现了单体和聚集态半花菁     

退火温度对高分子薄膜中掺杂小分子的结晶和光谱学响应特性的影响

研究了小分子材料苝(EPPTC)在高分子材料聚芴衍生物(F8BT)薄膜中的结晶特性随温度的变化规律,以及由此引起的两种材料构成的异质结中激发复合体荧光发射特性的变化。实验结果表明,退火温度的升高会加强小分子与高分子材料在固体薄膜中的相分离。而小分子相在析出过程中,会在分子间作用力诱导下发生π—π团聚而结晶。晶体的尺度在达到小分子材料相变温度之前基本上随温度升高而增大。这一过程将破坏异质结结构,减小小分子与高分子间的接触面积,从而降低激发复合体的形成及其荧光发射强度。同时,由高分子向小分子发生的能量转移过程被显著减弱,而小分子晶相的荧光发射成分提高。这对于调控有机半导体异质结结构,进而改善光伏器件性能具有重要意义。     

Investigation on the nonlinear optical properties of the DCNP/PEK-c guest–host polymer films

The polyetherketone (PEK-c) guest-host polymer thin films doped with 3-(1,1-dicyanothenyl)-1-phenyl-4,5-dihydro-1H-pryazole (DCNP) were prepared. The polymer films were investigated with in situ second-harmonic generation (SHG) measurement. The corona poling temperature was optimized by the temperature dependence of the in situ SHG signal intensity under the poling electric field applying. The temporal and temperature stability of the second-order properties of the poled polymer film were measured by the in situ SHG signal intensity probing. The second-order NLO coefficient L₃₃⁽²⁾=32.65 pm/V at 5=1064 nm was determined by using the Maker fringe method after poling under the optimal poling condition. The dispersion of the NLO coefficient of the guest-host polymer system was determined by the measured value of L₃₃⁽²⁾ at 1064 nm and the two-level model.     

Film formation from PS latex doped PNIPAM hydrogels at various heating and cooling rates

Film formation from polystrene (PS) latex doped poly(N-isopropylacrylamide) (PNIPAM) hydrogels was studied by using photon transmission technique. The transmitted light intensity, I _tr was monitored during film formation process. Films were prepared by annealing, 10 wt% PS doped PNIPAM particles at five different heating and cooling rates at temperatures ranging from 10 to 100°C. I _tr presented a hysteresis loops during heating–cooling cycles, which were explained by void closure and void reconstruction processes. The corresponding activation energies were measured during reversible film formation process. Void closure and void reconstruction models were introduced to produce the activation energies.     

氰基团修饰的苯腙类有机分子掺杂极化聚合膜光学非线性的研究

采用实时测量光学二次谐波产生（ＳＨＧ）和吸收光谱的方法对苯腙类有机分子ＮＤＡ及一种新合成的经氰基团修饰的有机分子ＣＮＤＡ掺杂ＰＭＭＡ极化聚合膜的非线性光学性质进行了研究。实验中发现两种掺杂极化聚合膜的最佳电晕极化温度均低于它们的玻转温度,ＣＮＤＡ／ＰＭ－ＭＡ极化掺杂聚合膜的χ（２）较ＮＤＡ／ＰＭＭＡ极化聚合膜的大。结合极化前和极化后吸收峰强度的变化,得到ＣＮＤＡ分子的非线性极化率β约为１４６×１０－３０ｅｓｕ。在撤离极化场后,ＣＮＤＡ／ＰＭＭＡ的二次谐波强度的弛豫也比ＮＤＡ／ＰＭＭＡ的慢     

Pulsed-laser annealing of GaAs surface studied by time-resolved second-harmonic generation in reflection

Experimental results are presented on the time dependence of the second-harmonic generation (SHG) of a mode-locked Q-switched Nd: YAG laser in reflection from both amorphous and crystalline GaAs surfaces during the pulsed-laser annealing under ruby laser irradiation. A dramatic increase of SHG by more than two orders of magnitude due to recrystallization of the noncentrosymmetric GaAs lattice in the process of pulsed-laser annealing is observed and the duration of surface recrystallization is measured to be not greater than 30–40 ns. The results can be fully understood in terms of the melting model of laser annealing.     

Second harmonic generation by cold-deposited silver films

The second harmonic generation (SHG) of light diffusely scattered by cold-deposited silver films is negligible with respect to the specular intensities. Therefore, a cold-deposited silver film is well approximated by a homogeneous effective medium. The intensities of SHG at 1.06 μm and the optical absorption at 0.53 μm depend on both the square of the internal effective field at 0.53 μm and a change in the same way when annealing the film. This can be understood by the assumption that SHG is also mainly following the electric field within the metal phase and surface contributions to SHG interfere destructively. This is corroborated by the observation that the SHG intensity does not show the ‘chemical first layer effects’ seen by surface-enhanced Raman scattering (SERS).     

Electrical conductivity of nitride carbon films with different nitrogen content

The electrical conductivity of nitride carbon (DLC: N) films has been studied. It is found that the electrical conductivity of the deposited films increases slowly with increasing nitrogen content, however, it decreases after the nitrogen content in the film reaches a certain value of 12.8 at%. Thermal treatment results show that the electrical conductivity of the lowly nitrogen doped DLC film increases rapidly, while that of the heavily doped film decreases after annealing at 300 °C for 30 min. Raman and XPS spectra results show that when the nitrogen content in the films reaches a certain value, there appears nonconductive phases. Therefore the electrical conductivity of the heavily doped films decreases. FTIR spectra analysis results show that the nitrogen atom as an impurity center undergoes an ‘activation’ process during the thermal treatment, which leads to the increase of the electrical conductivity. Therefore, the nitrogen in these two kinds of films has different effects on the electrical conductivity.     

温度对AZO薄膜红外辐射性能的影响

随着全球资源的减少和环境的恶化,节能减排已成为人们关注的焦点,具有保温隔热功能的低辐射玻璃成为研究的热点。提高玻璃保温隔热性能最有效的方法就是在其表面涂覆低辐射率层。原材料丰富、导电性能好、可见光透过率高等优势使得Al掺杂ZnO (AZO)薄膜成为最具潜力的低辐射率层。系统研究了温度对AZO薄膜红外辐射性能的影响,分析了变化机理。首先研究了在一定的温度下持续一段时间后,AZO薄膜的红外比辐射率的变化情况。然后研究了在变温环境中红外比辐射率的变化情况。采用直流磁控溅射法在室温下玻璃基片上沉积500 nm厚的AZO薄膜,将薄膜放到马弗炉中进行热处理,在100～400 ℃空气气氛下保温1 h,随炉冷却。采用X射线衍射仪对AZO薄膜进行物相分析,采用扫描电子显微镜观察薄膜表面形貌变化。利用四探针测试法测量AZO薄膜的电阻率,采用红外比辐射率测试仪测试薄膜红外比辐射率, 可见分光光度计测量可见光谱。测试的结果表明,薄膜热处理前后均为六角纤锌矿结构,(002)择优取向。300 ℃及以下热处理1 h后,(002)衍射峰增强,半高宽变窄,晶粒尺寸长大。随着热处理温度的升高,薄膜的电阻率先减小后增大,200 ℃热处理后的薄膜具有最小的电阻率(0.9×10-3 Ω·cm)。热处理温度升高,晶粒长大使得薄膜电阻率降低。热处理温度过高,薄膜会从空气中吸收氧,电阻率下降。薄膜的红外比辐射率变化趋势和电阻率的一致,在200 ℃热处理后获得最小值(0.48)。自由电子对红外光子有较强的反射作用,当电阻率低,自由电子浓度高的时候,更多的红外光子被反射,红外辐射作用弱,红外比辐射率小。薄膜的可见光透过率随着热处理温度的升高先减小后增大,200 ℃热处理后的薄膜的可见光透过率最小,但仍高达82%。这种变化是由于自由电子浓度变化引起的,自由电子对可见光有很强的反射作用。选取未热处理和200 ℃热处理后的样品进行变温红外比辐射率的测量,将样品放在可加热的样品台上,位置固定,在室温到350 ℃的升温和降温过程中每隔25 ℃测量一次红外比辐射率,结果表明,在室温到350 ℃的温度范围内,AZO薄膜的红外比辐射率在升温过程中随着温度的上升而增大,在降温过程中减小,经过整个升、降温过程后,薄膜的红外比辐射率增大。     

Growth and characterization of pure and doped organic nonlinear optical single crystal: l-Alanine alaninium nitrate (LAAN)

The pure l-alanine alaninium nitrate (LAAN) single crystals and LAAN crystals doped with lanthanum oxide (La₂O₃), sodium chloride (NaCl), urea (CH₄N₂O), glycine (C₂H₅NO₂) and thiourea (CH₄N₂S) were grown by slow evaporation method. The X-ray diffraction analysis, scanning electron microscopy (SEM), energy dispersive X-ray (EDAX) analysis, UV–vis spectral analysis, dielectric studies and powder SHG measurement are studied systematically. The slight changes in the lattice parameters were observed for the doped crystals compared to pure LAAN crystal. The incorporation of doping into the crystal lattice was confirmed by energy dispersive X-ray analysis. There is no change in the transmission window due to doping and the percentage of transmission in doped samples was found to increase as compared to that of pure LAAN crystal. The dielectric constant of pure crystal was found to be less than that of doped crystals. The AC conductivity was found to increase after doping and with the increase in temperature. A green radiation of 532 nm was observed from the pure and doped LAAN crystals confirming the second harmonic generation (SHG) of the crystals.