纳米结构CoxFe3-xO4多孔微球的磁性及交换偏置效应研究

用乙二醇为溶剂,用三氯化铁、二氯化钴和醋酸铵为起始反应试剂,通过溶剂热反应首次合成了纳米结构Co_xFe_3-xO₄多孔微球.用X射线衍射仪(XRD)、透射电子显微镜(TEM)和扫描电子显微镜(SEM)表征样品的结构和形貌,结果表明,所制备的单分散Co_xFe_3-xO₄多孔微球为立方多晶结构,其直径约300 nm,是由约30 关键词： xFe_3-xO₄')" href="#">Co_xFe_3-xO₄ 多孔微球 磁性 交换偏置效应     

AlN/Si3N4纳米多层膜的外延生长与力学性能

采用射频磁控溅射方法制备单层AlN, Si₃N₄薄膜和不同调制周期的AlN/Si₃N₄纳米多层膜.采用X射线衍射仪、高分辨透射电子显微镜和纳米压痕仪对薄膜进行表征.结果发现,多层膜中Si₃N₄层的晶体结构和多层膜的硬度依赖于Si₃N₄层的厚度.当AlN层厚度为4.0nm、 Si₃N₄层厚度 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 应力场 超硬效应     

(Fe1-xCox)3BO5纳米棒磁性的研究

本文采用高温有机溶剂法制备了(Fe_1-xCo_x)₃BO₅纳米棒, 通过控制反应物中乙酰丙酮钴的含量合成了不同Co含量的(Fe_1-xCo_x)₃BO₅. 利用高分辨透射电子显微镜(HRTEM)、超导量子干涉磁强计(SQUID)对其形貌和磁性能进行了表征. 高分辨透射电子显微镜结果表明制备出的纳米(Fe_1-xCo_x)₃BO₅为多晶棒状, 且具有多折孪晶结构; 磁性测量的结果表明,(Fe_1-xCo_x)₃BO₅纳米棒在室温下表现出铁磁性, 随着Co含量的增加, 纳米棒的铁磁性逐渐增加, 该纳米棒有望用来研究生物大分子的机械性能.     

微波等离子体化学气相沉积法制备C3N4薄膜的结构研究

采用微波等离子体化学气相沉积法,用高纯氮气(99.999%)和甲烷(99.9%)作反应气体,在单晶Si(100)基片上沉积C₃N₄薄膜.利用扫描电子显微镜观察薄膜形貌,表明薄膜由密排的六棱晶棒组成.X射线衍射和透射电子显微镜结构分析说明该薄膜主要由β-C₃N₄和α-C₃N₄组成,并且这些结果与α-C₃N₄相符合较好.由虎克定律近似关 关键词： 3N₄')" href="#">C₃N₄ 微波等离子体化学气相沉积法 薄膜沉积     

SnO2量子点/石墨烯复合结构的合成及其光催化性能研究

本文以SnCl₄·5H₂O和氧化石墨烯为先驱物, 乙醇水溶液为溶剂, 采用一种简单的水热法一步合成了具有可见光催化活性的SnO₂量子点(约3–5 nm)与石墨烯复合结构, 利用透射电子显微镜(TEM), 高分辨透射电子显微镜(HRTEM), X射线衍射仪(XRD), 傅里叶变换红外光谱(FT-IR)等技术对其结构进行了表征, 利用紫外可见吸收光谱(UV-vis)分析了其光学性能, 罗丹明-B染料为目标降解物研究了SnO₂量子点/石墨烯复合结构可见光催化性能. 结果表明: 与纯SnO₂、纯石墨烯相比, 复合结构显示出了很高的可见光催化活性. 通过对其结构进行分析, 我们提出了SnO₂量子点/石墨烯复合结构的形成机制及其可见光催化活性机理.     

3:29型Gd-Fe-Co-Cr化合物的结构和磁性

制备了Gd₃(Fe_1-xCo_x)₂₅Cr₄(0≤x≤0.6)和Gd₃Fe_29-yCr_y(3.5≤x≤5.0)化合物,通过X射线衍射和磁性测量手段研究了它们的结构和磁性.实验表明这些化合物都属于A_2/m空间群.Cr含量增加导致居里温度下降,饱和磁化强度降低,磁晶各向异性场下降.Co替代Fe导致单胞体积收缩,居里温度升高,5K的饱和磁化强度在x=0.3左右达到极大值,磁晶各向异性在x=0.4附近由易面转变为易轴. 关键词：     

铁纳米粒子的结晶形态与表面氧化膜分析

铁纳米粒子样品系采用气体蒸发法制备,用透射电子显微镜观察其结晶形态和粒径大小,采用X射线衍射、电子衍射、X射线光电子能谱和俄歇电子能谱等多种分析手段详细分析了粒子表面氧化膜的组成、结构和厚度及其稳定性,提出了铁纳米粒子组成和结构模型。结果发现铁纳米粒子本身的晶体结构与普通α-Fe是一致的,为体心立方结构,粒子表面存在约3nm厚的双层氧化膜,外面一层为γ-Fe₂O₃,厚度约为1nm。里面一层为Fe₃O₄,厚度约为2nm, 关键词：     

激光干涉结晶技术制备二维有序分布纳米硅阵列

利用结合移相光栅掩模 (PSGM) 的激光结晶技术在超薄a-SiN_x/a-Si:H/ a-SiN _x三明治结构样品中制备出二维有序分布的纳米硅阵列.原始样品是用等离子体 增强化学气相淀积法生长.a-Si:H层厚为10nm，a-SiN_x 为50nm，衬底材料为SiO ₂/Si或 熔凝石英.原子力显微镜、剖面透射电子显微镜、高分辨透射电子显微镜对样品表面形貌和 微结构的观测结果表明，采用该方法可以在原始淀积的a-Si:H层中得到位置可控的晶化区域 ：每个晶化区域直径约250nm，具有同PSGM一致的2μm周期；晶化区域内形成的纳米硅 颗粒尺寸接近原始淀积的a-Si:H层厚，且晶粒的择优取向为<111>. 关键词： 纳米硅 激光结晶 定域晶化 移相光栅     

单层MoSe2单晶的光学及电学性能探究

采用Au箔作为生长衬底,通过化学气相沉积法制备了高质量的单层MoSe₂单晶.通过光学显微镜、扫描电子显微镜、扫描透射电子显微镜等对其形貌和结构进行了表征,研究了单层MoSe₂单晶的光学及电学特性.结果表明：单层MoSe₂具有非线性光学特性,并具有直接带隙结构(带隙宽度约为1.56 eV)及较好的光致发光特性.当其作为场效应晶体管器件的半导体沟道材料时,器件的载流子迁移率为1.6 cm²/(V·s),开关比约为10⁴.     

Ti-B-C-N纳米复合薄膜结构及力学性能研究

利用反应磁控溅射方法在单晶硅和高速钢(W18Cr4V)基片上制备出不同C含量Ti-B-C-N纳米复合薄膜. 使用X射线衍射和高分辨透射电子显微镜研究了Ti-B-C-N纳米复合薄膜的组织和微观结构,用纳米压痕仪测试了它们的硬度和弹性模量. 结果表明,利用往真空室通入C₂H₂气体的方法制备得到的Ti-B-C-N纳米复合薄膜中,在所研究成分范围内只发现TiN基的纳米晶. 当C₂H₂流量较小时,C元素的加入可以促进Ti-B-C 关键词： Ti-B-C-N薄膜 磁控溅射 微观结构 力学性能     

Structure and interlayer coupling in Co/V multilayers

Two series of sputtered Co/V multilayers were investigated by X-ray diffraction, ferromagnetic resonance (FMR) and magnetic measurements. The multilayers are found severely alloyed, resulting in two FMR peaks of uniform mode. Spin-wave resonance (SWR) spectra were observed when the thickness of vanadium is thin, indicating interlayer coupling. The data of SWR were treated approximately respectively by volume inhomogeneity (VI) and volume homogeneity and entire surface pinning (SP) models. The relatively small calculated effective exchange constants showed weak exchange coupling between Co layers across V spacers.     

Ferromagnetic resonance studies in Co/SiO2 multilayers

The uniaxial in-plane and out-of-plane anisotropies of [Co/SiO₂] × 10 multilayers have been studied by ferromagnetic resonance, magnetometry and transmission electron microscopy. The surface and volume anisotropy constants are in the range of values typical for multilayers with Co and transition metals of the iron group. The influence of the intermixed Co-SiO₂ region is discussed.     

Interlayer Exchange Coupling Across Quasi-Amorphous Ti-Co and Zr-Co Spacers

Co/Ti and Co/Zr multilayers with wedge-shaped and constant-thickness Ti and Zr sublayers were prepared using UHV DC/RF magnetron sputtering. Results showed that the Co sublayers are ferromagnetically coupled up to Ti and Zr spacer thickness of about 1.9 and 2.4 nm, respectively. Furthermore, a weak antiferromagnetic coupling of the Co sublayers was observed for a Ti (Zr) thickness range between 1.9 and 2.7 nm (2.4 and 3.2 nm). The Co sublayers are very weakly exchange coupled or decoupled for d _Ti 2.7 nm and d _Zr 3.2 nm. The rapid decrease of the interlayer exchange coupling could be explained by its strong damping due to formation of a non-magnetic quasi-amorphous Ti-Co and Zr-Co alloy layer at the interfaces.     

Analytical TEM studies of Nd-Fe-B containing V,Co and Dy

Microstructural changes resulting from the addition of V, Co and Dy to Nd-Fe-B to yield the composition Nd_14.4Dy_1.6Fe₆₇Co₅V₄B₈ have been studied using transmission electron microscopy (TEM). Two types of precipitates ranging in size from ≈ 0.1 μm to several micrometers in diameter were observed embedded in the intergranular Nd-rich region and within the hard magnetic matrix grains. These two types of precipitates were round and lamellar, respectively. They were both borides (V boride and V-Fe boride) as shown by electron energy loss spectroscopy (EELS). TEM diffraction patterns revealed that the lamellar phase could be indexed as an orthorhombic structure with a = 0.291 nm, b = 0.278 nm and c = 0.7837 nm, which is close to VB and has not been reported before in V containing Nd-Fe-B material. The round particles have a tetragonal structure with a = 0.53 nm and b = 0.30 nm, which is similar to that of the V_2-x Fe_xB₂ phase reported previously. Co was found to form Nd₃Co precipitates in the Nd-rich boundary regions. The Co dissolved in the matrix phase is responsible for the increase of Curie temperature ( ≈ 354°C).     

Surface modification of exchange-coupled Co/NiOx magnetic bilayer by bias sputtering

We have investigated the effect of bias voltage on sheet resistance, surface roughness and surface coverage of Co/NiO_x magnetic bilayer. In addition, interface topography and corrosion resistance of the Ta/Co/Cu/Co/NiO_x/Si(1 0 0) system have been studied for Co layers deposited at an optimum bias voltage. Atomic force microscopy (AFM) and four point probe sheet resistance (R_s) measurement have been used to determine surface and electrical properties of the sputtered Co layer at different bias voltages ranging from 0 to −80 V. The Co/NiO_x bilayer exhibits a minimum surface roughness and low sheet resistance value with a maximum surface coverage at V_b=−60 V resulted in a slight increase of magnetic resistance and its sensitivity for the Co/Cu/Co/NiO_x/Si(1 0 0) magnetic multilayers, as compared with the same magnetic multilayers containing unbiased Co layers. The presence of Ta protection layer improves the corrosion resistance of the multilayers by three orders of magnitude in a humid environment.     

Silicon nanoparticle size-dependent open circuit voltage in an organic–inorganic hybrid solar cell

We have incorporated silicon nanoparticles (Si-nps) into organic–inorganic hybrid solar cells in place of the chalcogenide nanocrystals that are commonly employed in such devices. Poly(3,4-ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) and phenyl-C₆₁-butyric acid methyl ester (PCBM) were employed as hole and electron transport layers, respectively. We used transmission electron microscopy, Raman spectroscopy, and ultraviolet–visible spectroscopy to fully characterize the Si-nps and relate their characteristics to the performance of the hybrid solar cells. We show that the open circuit voltage (V_OC) was largely dependent on the size and amorphous volume fraction of Si-nps. Our findings imply that the amorphous phase and small size of Si-nps produce band gap widening that increases the V_OC when coupled with PCBM as acceptor. The maximum V_OC was up to 0.634 V in a hybrid device with 5.7 nm Si-nps.     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al₂O₃调制层厚度的TiN/Al₂O₃纳米多层膜. 利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能. 研究结果表明，在TiN/Al₂O₃纳米多层膜中，单层膜时以非晶态存在的Al₂O₃层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化，并与TiN层形成共格外延生长，相应地，多层膜产生硬度明显升高的超硬效应，最高硬度可达37.9 GPa. 进一步增加多层膜中Al₂O₃调制层的层厚度，Al₂O₃层逐渐形成非晶结构并破坏了多层膜的共格外延生长，使得多层膜的硬度逐步降低. 关键词： 2O₃纳米多层膜')" href="#">TiN/Al₂O₃纳米多层膜 外延生长 非晶晶化 超硬效应     

Reactive resistance welding of Ti6Al4V alloy with the use of Ni(V)/Al multilayers

The freestanding Ni(V)/Al multilayer foil was applied as a filler material in order to join Ti6Al4V alloy with the use of reactive resistance welding (RRW) technique. Present investigations, performed with the use of transmission electron microscopy (TEM) method, allowed to show that an application of high current (I = 400 A for 2 min in vacuum conditions ～10^–1 mbar) transformed the Ni(V)/Al multilayers into fine grain (<300 nm) NiAl phase. It also showed that the RRW process led to the formation of firm connection with nanoporosity limited only to the original contact plane between base material and the foil. Simultaneously, the formation of a narrow strip of crystallites of Ti₃Al intermetallic phase elongated along the joint line (average size of ～200 nm) was observed. The base material was separated from the joint area by a layer of up to ～2 μm thickness of nearly defect free α‐Ti and β‐Ti grains from a heat affected zone (HAZ). The performed experiment proved that Ni(V)/Al multilayer could serve as a filler material for joining of Ti6Al4V alloys even without additional solder layer. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Structure and magnetic properties of wedged Co/Ti multilayers

Co/Ti multilayers with wedge-shaped Co or Ti sublayers were prepared using UHV (5×10⁻¹⁰ mbar) DC/RF magnetron sputtering. The planar growth of the Co and Ti layers was confirmed in situ by X-ray photoelectron spectroscopy. Cobalt sublayers grow on sufficiently thick titanium sublayers in the soft magnetic nanocrystalline phase up to a critical thickness d_crit3.0 nm. For a thickness greater than d_crit, the Co sublayers undergo a structural transition to the polycrystalline phase with much higher coercivity. Furthermore, for the Co/Ti multilayers with nanocrystalline Co sublayers with d_Co=2.7 nm we have observed a significant drop of the coercivity — typically from H_c3.5 kA/m to H_c0.2 kA/m — for Ti thickness d_Ti0.35 nm. The above effect could be explained by the existence of a minimum Ti sublayer thickness (d_min0.35 nm), which is required for the nanocrystalline growth of Co, and/or the formation of quasi-continuous non-magnetic layers for d_Tid_min giving rise to a decrease of the exchange energy between Co sublayers. Magnetic domains and walls studies revealed the structural transitions of the Co sublayers.     

TiN/SiO2纳米多层膜的晶体生长与超硬效应

高硬度的含氧化物纳米多层膜在工具涂层上具有重要的应用价值.研究了TiN/SiO2_{2纳米多 层膜的晶体生长特征和超硬效应.一系列具有不同SiO22和TiN调制层厚的纳米多 层膜采用多 靶磁控溅射法制备；采用x射线衍射、x射线能量色散谱、高分辨电子显微镜和微力学探针表 征了多层膜的微结构和力学性能.结果表明，虽然以单层膜形式存在的TiN和SiO22分别形成 纳米晶和非晶结构，它们组成多层膜时会因晶体生长的互促效应而呈现共格外延生长的结构 特 关键词： 2纳米多层膜')" href="#">TiN/SiO22纳米多层膜 外延生长 非晶晶化 超硬效应}