磁场对La2－xSrxCuO4单晶热导的影响研究

报道了系列欠掺杂La_2-xSr_xCuO₄（x=0063,0070,0 090,0110,0125）单晶的零场和加磁场情况下ab面和c方向的热导率与温度的关系曲线，测量 温度范围从2到45K. 研究发现ab面和c方向的热导率都受到磁场的压制. 而且在磁场 的作用下，热导压制率随温度变化的关系和场致反铁磁有序的增强与温度的依赖关系有高度 相似性. 认为磁场引起的ab面的热导压制主要是电子热导的变化所致，而c方向的 压制则可能主要来源于声子热导的变化，它们均可能与磁场诱导下欠掺杂La_2-x Sr_xCuO₄的某种电荷有序和磁有序的增强密切相关. 关键词： 热导 电荷有序 磁有序     

Nd1.67Sr0.33NiO4中的热导反常

报道了两个典型掺杂的镍氧化物Nd＿2-xSr＿xNiO＿4(x =0.33,1.35)的低温热导率、电阻率和低场交流磁化率，测试温区为77—300K. 在Nd＿2-xSr＿xNiO＿4 (x=0.33)样品的热导率-温度曲线上在电荷有序转 变温度（T＿CO）和自旋有序转变温度（T＿SO）附近分别观测到反常， 电荷有序使热导率在T＿CO以下有所增加，反铁磁自旋有序使热导率在T＿SO附近被压制. 在低场交流磁化率-温度曲线上也分别观测到对电荷有序和自旋有 序的响应，而在其电阻率-温度曲线上仅观测到电荷有序. 作为比较，Nd＿1.67Sr0.33NiO＿4样品中没有观测到输运性质和磁性质上的反常. 两个样品中声子热导占 主导地位. Nd＿1.67Sr0.33NiO＿4样品中电荷有序和自旋有序导致的热导 率的反常表明样品中存在强的电荷-声子和自旋-声子相互作用. 关键词： 热导率 电荷有序 自旋有序     

Cr80-xFe20Mnx(x=10,15,20)合金的低温电阻率和热导率

报道了Cr80-xFe20Mnx(x=10,15,20)合金在10—300K的电阻率和热导率．结果表明样品的电输运性质和热输运性质均与样品的磁状态有关．在SDW反铁磁转变附近,电阻率出现极小．对Neel温度以下电阻率-温度曲线拟合结果表明：取温度相关的能隙函数2△∝√（TN-T）可以很好地描述SDW反铁磁能隙随温度降低而打开的过程．合金在反铁磁转变温度以下表现出与无序样品或者玻璃态样品类似的热导率温度关系,这可能是源于合金中磁性团簇的散射．     

β型锑烯热电输运性质的第一性原理研究

利用第一性原理与半经典玻尔兹曼方程，计算并分析β型锑烯的声子色散、声子群速度、声子弛豫时间、晶格热导率及不同温度下的塞贝克系数、电导率和电子热导率随化学势的变化；结果表明：β型锑烯由于非平面六角结构，三支声学声子在Γ点附近均呈线性变化；声学声子对整个晶格热导率的贡献高达96.68%，而光学声子仅仅占到3.32%；由于较大的声光带隙（a-o gap）导致LA支在声子群速度和弛豫时间中占据主导地位，从而增大了LA支声子对整个热导的贡献；热电优值随温度的升高而增大，在费米面附近其绝对值最大可达0.275.     

Nd_(1.67)Sr_(0.33)NiO_4中的热导反常

报道了两个典型掺杂的镍氧化物Nd2 -xSrxNiO4 (x=0 33,1 35 )的低温热导率、电阻率和低场交流磁化率 ,测试温区为 77— 30 0K .在Nd2 -xSrxNiO4 (x=0 33)样品的热导率_温度曲线上在电荷有序转变温度 (TCO)和自旋有序转变温度 (TSO)附近分别观测到反常 ,电荷有序使热导率在TCO 以下有所增加 ,反铁磁自旋有序使热导率在TSO 附近被压制 .在低场交流磁化率_温度曲线上也分别观测到对电荷有序和自旋有序的响应 ,而在其电阻率_温度曲线上仅观测到电荷有序 .作为比较 ,Nd0 6 5Sr1 35NiO4 样品中没有观测到输运性质和磁性质上的反常 .两个样品中声子热导占主导地位 .Nd1 6 7Sr0 33NiO4 样品中电荷有序和自旋有序导致的热导率的反常表明样品中存在强的电荷_声子和自旋_声子相互作用     

Y3Al5O12的热输运性质的第一性原理研究

基于密度泛函微扰理论（DFPT）结合模守恒赝势方法进行晶格动力学模拟.得到了钇铝石榴石（YAG）的声子态密度、分波声子态密度和声子的色散谱.利用第一Brillouin区的特殊点取样方法,计算了YAG的比热容和布局数平均的声子群速度.在非谐相互作用下,利用Fermi黄金公式结合第一Brillouin区的特殊点取样方法,得出了YAG非谐声子平均自由程.综合考虑了两种声子散射机制,得到了YAG陶瓷的热导率.结果表明,对于YAG陶瓷,在低温时,晶界散射将对热阻起主要作用;在高于一定温度时,三声子相互作用对热阻的贡献将占主导地位.同时也从理论上证明了Sato等提出的在室温以上,YAG陶瓷与单晶的热导率的差异可以忽略的观点.所得到的热导率、比热容随温度的变化与实验结果很好地符合. 关键词： 声子平均自由程 密度泛函微扰理论 3Al₅O₁₂声子结构')" href="#">Y₃Al₅O₁₂声子结构 热导率     

类石墨烯氮化碳结构(C3N)热传导机理研究

类石墨烯氮化碳结构(C₃N)作为一种全新的碳基二维半导体材料,由于其优异的机械和电子性能引起了研究者们的广泛关注,不同结构C₃N的热输运和声子输运机制还待进一步研究.本文构造了4种不同结构的C₃N,采用非平衡分子动力学与晶格动力学方法对不同结构的C₃N的热传导机理进行了研究.研究结果表明:1)在4种结构中M3热导率最高,M1次之,M4热导率最低;2)不同结构的C₃N的热导率具有明显的尺寸效应和温度效应.当样本长度较短时,声子主要以弹道输运的方式进行传输;当样本长度增大,扩散输运占主导地位;随着温度的升高,Umklapp散射在热输运中占据主导地位,使得热导率与温度具有1/T的依赖性.3)与M3相比,M1和M4结构中都存在更大的声子带隙,色散曲线进一步软化,低频和高频声子同时出现了局域化的特征,对热导率产生了显著的抑制作用.本文为更好地设计热管理材料提供了思路.     

哈斯勒合金Ni-Mn-Sn的马氏体相变与反磁热性质

通过结构以及磁性测量,研究了哈斯勒合金Ni₅₀Mn_25+xSn_25-x (x=11,12)的马氏体相变和磁热性质.结果表明,与样品在奥氏体相的磁性不同,由于在马氏体相中反铁磁交换作用的增强,导致铁磁和反铁磁在马氏体状态下共存.此外,通过Maxwell方程,研究了两样品在不同磁场变化下马氏体相变温度附近的反磁热性质,并阐明了该系列合金产生大的正磁熵变(ΔS_M)不仅与其在降温过程中发生马氏体相变所导致的磁跃变(ΔM)有关,而且与发生马氏体相变所经历的温度区间有密切的联系. 关键词： 哈斯勒合金 Ni-Mn-Sn 马氏体相变 正磁熵变     

异侧非重叠三封闭端量子波导中的声子输运与热导

研究了异侧非重叠三封闭端量子波导中的声学声子传输和热导率性质.结果表明:由于激发模的产生,总传输系数在整数约化频率的时发生跳跃;各个激发模所产生的温度条件不一样,温度越高,被激发的模越多,并且高阶模对热导的影响较小;声子传输和热导性质与不连续结构的形状和位置有直接的关系,声子传输和热导性质对量子线的温度环境相当敏感.     

二元氧化物Yb3TaO7的非晶状热传导机理

具有非晶状热导率的固体材料在热能转换和热管理应用中备受青睐.因此,揭示晶体材料的非晶状热传导机理对于开发和设计低热导率材料至关重要.本文运用原子模拟方法揭示了萤石结构二元简单晶体Yb₃TaO₇的非晶状低热导率的物理机理.研究发现,萤石Yb₃TaO₇的低热导率主要是由O-Yb和O-Ta之间的原子间结合力相差较大引起的.这种相差较大的原子键可以极大地软化声子模式,从而抑制声子输运.振动模式分解显示,萤石Yb₃TaO₇中的大多数声子模式位于Ioffe-Regel极限以下,表现出强烈的扩散特征.萤石Yb₃TaO₇中绝大部分(> 90%)的热流是通过扩散模式而不是传播模式传输.因此,萤石Yb₃TaO₇中的热传导表现出独特的类非晶特性.同时发现,萤石Yb₃TaO₇中的光学声子模式在热传导中发挥着重要的作用.本文对于原子间结合力与低热...     

Universal conductivity variation in glassy Zr-M alloys

Temperature dependence (3–300 K) of the electrical conductivity in a number of amorphous Zr_1?xM_x alloys (M = Cu, Ni, Co and Fe, 0.19 < x < 0.71) has been analysed in some detail. Like in some other alloys with a high electrical resistivity, the conductivity varies as T at lower temperatures (T < 80 K) and √T at higher temperatures. A new feature observed is that the ratio of the coefficients of a low temperature T and a high temperature √T conductivity variation is practically constant for allalloys. Therefore a universal conductivity-temperature curve can be constructed for all amorphous Zr_1?xM_x alloys with the resistivity higher than 150 μohms cm. These results are consistent with the effects of incipient localisation and indicate that the electron-phonon coupling determines the conductivity variation.     

Anomalous phonon thermal resistivity in superconducting Ti55Nb45 alloys

The thermal conductivity of cold-worked and heat-treated Ti₅₅Nb₄₅ alloys has been measured in the temperature range between 0.6 and 1.5 K. Anomalously strong scattering of phonons for every sample and the remarkable enhancement in the thermal resistivity caused by the annealing at 500°C on cold-worked alloys have been found. These behaviors indicate the existence of an anomalous phonon scattering mechanism besides dislocation scattering in Ti₅₅Nb₄₅ alloys. Electron diffraction patterns show the circular diffuse streaks characteristic of the precursory lattice distortion for the ω atomic configuration. Two kinds of models which correlate the anomalies in the phonon scattering with the lattice instability of the β phase of Ti-Nb matrix are described.     

硫掺杂C60薄膜电学性质研究

对硫掺杂C₆₀薄膜样品在433K进行真空退火，并测量了其电导率随温度的变化关系．发现硫掺杂后C₆₀薄膜的电导激活能减小，电导率显著增大．电导率随温度的变化曲线在368K到388K的范围内，存在一个电导率与温度的关系不严格遵循指数规律的过渡区，在过渡区的两侧硫掺杂的C₆₀薄膜则表现出明显的半导体特性，这是由于在不同温度范围内样品中硫分子的结构相变所引起的 关键词：     

Heat treatment effects in amorphous metals: Zr70Cu30 and La70Cu30

We measured the electrical resistivity (4–300 K), superconducting critical temperature and thermal conductivity (0.5–7 K) of the amorphous metals Zr₇₀Cu₃₀ and La₇₀Cu₃₀. Heat treatments below crystallization temperature induced changes in these properties. In particular, in the first stage of the annealing of Zr₇₀Cu₃₀ there are systematic changes in the thermal conductivity and the critical temperature, while the electrical resistivity remains constant. We show that there is no simple correlation between the thermal conductivity processes in the low temperature and plateau regions. We also show that the thermal conductivity of as quenched La₇₀Cu₃₀ is typical of amorphous metals, contrary to information previously reported.     

Low temperature electrical conductivity and magnetoconductivity of Fe39Ni39Mo4Si6B12 and Co58Ni10Fe5Si11B16 metallic glass alloys

A detailed study on the weak localization phenomenon vis-a-vis electron-electron interaction effects in magnetic metallic glasses has been carried out. We measured the electrical conductivity and magnetoconductivity within the temperature range 1.8≤T≤300K. A maximum on the conductivity versus temperature curve exists atT=T _m. The conductivity was observed to follow aT ^1/2 law forT<T _m andT ² law forT>T _m. Magnetoconductivity data of these alloys indicate the prominence of electron-electron interaction at low temperatures. The authors have determined the inelastic scattering field and spin-orbit scattering field from the magnetoconductivity data. The inelastic scattering field obeys aT ^p law (p=2) at low temperatures.     

Electrical and magnetic properties of manganites La1 ? xAgxMnO3 (x = 0.05, 0.1, and 0.2) at 77 K < T < 300 K

The electrical conductivity, magnetization, and magnetoresistance of manganites La_{1 − x} Ag _x MnO₃ have been investigated in the temperature range 78–300 K. The samples have been synthesized by the sol-gel method. At room temperature, the magnetic field of 0.6 T has no effect on the electrical conductivity. As the temperature decreases, an abrupt jump is observed in the magnetization curve due to the semiconductor-metal phase transition. This transition hardly affects the temperature dependence of the resistance.     

Electrical and thermal properties of Ge40S60 films

Films of the composition Ge₄₀S₆₀ have been studied in the temperature range of 313–423 K for electrical conductivity, and 293–373 K for thermal conductivity. The dc conductivity results indicate a single value activation energy of 0.863 eV for the conductivity in the applied temperature range. The thermal conductivity coefficient increases linearly with temperature at a thickness of d=0.311 cm. It was found that the investigated samples show a memory effect. The threshold switching voltage was found to increase linearly with film thickness. Moreover, the threshold voltage decreases exponentially with temperature. The data are analysed using a thermal model for the switching process.     

Structure and electrical conductivity of ultrathin Ni-Cu films

The structure, phase composition, morphology, and electrical conductivity of Ni-Cu alloy ultrathin films having a thickness of d = 1?10 nm and a Cu concentration of 10–95 at % have been studied. All films are shown to be fcc Ni-Cu alloys; they have an island structure with an island size of 1.5–2 nm in the as-deposited films and of about 20 nm in the films annealed to 700 K. The electrical conductivity of the films depends on their thickness and morphology. For films with d ≈ 1 nm, the electrical conductivity is thermally activated with an activation energy E _a ≈ 0.086?0.095 eV. Films with d > 3 nm exhibit the metallic temperature dependence of electrical conductivity with a positive temperature coefficient of resistivity.     

Electrical resistivity and thermal conductivity of UP1−xSx

UP, US, and their solid solutions of several compositions were prepared, and the electrical resistivities of these samples were measured from liquid nitrogen temperature to 1000 K and the thermal diffusivities from 300 to 1000 K. It was shown that the resistivity of UP_1?xS_x at the paramagnetic region arose mainly from the scattering of conduction electrons by disordered spins localized at uranium ion sites. The resistivity of UP_0.4S_0.6 showed another anomaly below the transition temperature. A gentle hump of the thermal diffusivity of UP was observed at about 650 K. This was concluded to be due to the anomalous negative temperature coefficient of electrical resistivity observed above the Néel temperature up to about 550 K. The composition dependence of thermal conductivity of UP_1?xS_x was compared with that of UC_1?xN_x by separating the total conductivity into electronic and phonon contributions.     

Thermoelectric properties of SnzCo8Sb24 skutterudites

Sn-filled CoSb₃ skutterudite compounds were synthesized by the induction melting process. Formation of a single δ-phase of the synthesized materials was confirmed by X-ray diffraction analysis. The temperature dependences of the Seebeck coefficient, electrical resistivity and thermal conductivity were examined in the temperature range of 300-700 K. Positive Seebeck and Hall coefficients confirmed p-type conductivity. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled CoSb₃ skutterudite is a degenerate semiconductor. The thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. The lowest thermal conductivity was achieved in the composition of Sn_0.25Co₈Sb₂₄.