小间隙异面电极结构的光导开关

介绍了应用于介质壁加速器的小间隙异面电极结构的光导开关。所用光导开关为异面结构的砷化镓（GaAs）光导开关,电极间隙5 mm,偏置电压为15~22 kV脉冲高压,工作在非线性（高增益）模式,由半导体激光器产生的脉冲激光触发。脉冲激光的中心波长为905 nm,脉冲宽度（FWHM）约20 ns,前沿约3.1 ns,抖动小于200 ps,峰值功率约90 W。实验结果表明:光导开关的偏置电压较低时,开关寿命较长,导通性能较差;偏置电压较高、驱动脉冲激光功率较大时,开关导通性能较好,寿命较短。     

大电流两电极气体开关研究

 由于引燃管难以满足现在能源系统对放电开关承受大电流的要求，因此研制了大电荷转移量两电极气体开关。这种新型气体开关电极间距可调，无触发极，采用同轴结构，并将主电极置于金属腔体内，减少了放电对绝缘支撑的污染。主电极为铜钨合金材料，设计为平顶圆柱状，以提高烧蚀均匀度和热传导效率，减少电极材料喷溅，延长其寿命。绝缘支撑采用碗状结构，提高了机械强度，增加了沿面击穿距离。该开关工作电压达25 kV，放电电流超过100 kA（脉冲宽度600 μs），单次脉冲电荷转移量达50 C。实验结果显示该气体开关触发性能稳定，电极表面烧蚀均匀，多次大电流实验后电极表面保持完好，可应用于强激光能源系统。     

基于光导开关的激光二极管触发三电极气体开关研究北大核心CSCD

为实现激光二极管对气体开关的触发,采用从主回路开关两侧取电的基于光导开关一体化激光二极管触发气体开关结构,并对基于光导开关一体化激光二极管触发三电极气体开关进行了初步实验,实现了激光二极管输出能量83μJ条件下40 kV/8 kA三电极气体开关的可靠触发,证明了技术可行性。但实验中的实测光导开关的工作寿命仅约数百次。     

基于大功率激光二极管的光导开关导通特性

研究了应用于介质壁加速器的小间隙光导开关在大功率激光二极管驱动下的导通特性。激光二极管产生的激光脉冲中心波长为905nm,脉冲宽度(FWHM)约20ns,前沿约3.1ns,抖动小于200ps,峰值功率约90W。所用光导开关为异面电极结构的砷化镓(GaAs)光导开关,电极间隙5mm,偏置电压为15~22kV脉冲高压,工作在非线性(高增益)模式。测得光导开关最小导通电阻4.1Ω,抖动小于1ns,偏置电压在18kV时平均使用寿命约200次。     

国际高能脉冲X射线闪光照相加速器的发展综述北大核心CSCD

高能脉冲X射线闪光照相加速器在高性能爆轰流体动力学实验研究中具有重要应用,是牵引高功率脉冲技术发展的重大需求之一。综述了射频直线加速器、电子感应加速器、基于高压脉冲源和高功率二极管的强流脉冲功率加速器3大类、5种闪光照相加速器技术路线的主要特点、代表性装置,对比了几种技术路线的特点,展望了未来发展趋势:一是大力发展共轴多脉冲X射线分幅照相技术;二是采用全固态脉冲功率组件实现加速器紧凑化、小型化和可移动。     

大功率激光脉冲二极管触发高增益光导开关实验研究

研究了一种新型大功率激光脉冲二极管的输出特性,该激光二极管主要用于触发工作在高增益模式下的砷化镓光导开关。研制了基于射频金属-氧化物半导体场效应管的激光二极管驱动电路,可以为激光二极管提供上升沿、半高宽和峰值电流分别为4 ns,20 ns和130 A的脉冲驱动电流。研究了激光二极管输出的激光脉冲波形、能量、功率、光场分布等特性,并在Blumlein传输线结构中,研究了该大功率激光脉冲二极管的输出特性对工作于高增益模式下的光导开关的导通电阻、开关抖动等主要导通性能参数的影响规律。实验结果表明,激光脉冲的能量和功率越大,光斑面积越大、分布越均匀,在相同偏置电压条件下,光导开关的导通性能越好。     

Application of a ferroelectric plasma cathode as a high-current switch

In this paper the parameters of two types of high-current switches based on ferroelectric BaTiO₃ ignition are presented. Both types of switches showed a reliable and controllable operation with a repetition rate of several Hz. The first type is a vacuum two-electrode switch ignited by the plasma which is generated by a BaTiO₃ cathode. This type of switch was tested in the voltage range of 3-25 kV and switched current amplitude of 2-15 kA with either negative or positive polarity of the high-voltage electrode. The second type is a BaTiO₃ surface flashover strip-like switch ignited by a driving pulse which has an amplitude of several kV. It was shown that the application of the driving pulse (>10 kV) leads to the appearance of many non-complete surface discharges which transform further to a multi-channel discharge. This type of switch was tested in the voltage range of 1-25 kV and current amplitude of 0.5-15 kA. The design of the switches, their lifetime, the time jitter and the parameters of the switched current for different discharge conditions are presented. Received 5 November 2001     

Research on electrical pulse of 20-kV/30-Hz GaAs photoconductive switches

Photoconductive semiconductor switches (PCSSs) are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.     

Pseudospark switches-technological aspects and application

We report results of the development of fast closing switches, so-called pseudospark switches, at Erlangen University. Two different parameter regimes are under investigation: medium power switches (32 kV anode voltage, 30 kA anode current and 0.02 C charge transfer per shot) for pulsed gas discharge lasers and high power switches (30 kV anode voltage, 400 kA anode current and 3.4 C charge transfer per shot) for high current applications. The lifetime of these switches is determined by erosion of the cathode. The total charge transfer of devices with one discharge channel is about 220 kC for the medium and 27 kC for the high power switch. At currents exceeding 45 kA a sudden increase in erosion rate was observed. Multichannel devices are suited to increase lifetime as the current per channel can be reduced. Successful experiments with radial and coaxial arrangements of the discharge channels were performed. In these systems the discharge channels move due to magnetic forces. A skilful use of this phenomena will result in a considerably increase of switch lifetime. Multigap devices enable an increase of anode voltage. A three gap switch has run reliably at an anode voltage of 70 kV     

基于光导开关及层叠Blumlein线的纳秒脉冲源

设计了一台层叠Blumlein线型脉冲功率源。该脉冲源以平板型Blumlein线为储能器件,使用4个GaAs光导开关作为脉冲形成开关,通过4级Blumlein线层叠结构以获得更高输出电压。分别使用10 mm及3 mm间隙光导开关进行实验,比较了PSpice电路仿真与实验结果。实验测试显示,10 mm开关充电23.5 kV时上升沿较大,可能的原因是偏置电场较低时开关导通时间较长。测试了不同工作电压下功率源的输出电压,结果显示:在10 mm间隙开关条件下,充电23.5 kV时,负载上得到了53 kV的高压脉冲输出;3 mm开关充电13.9 kV时输出电压39.4 kV,输出效率70%。实验结果表明, 随着工作场强的提高,电压输出效率呈现先下降后上升最终趋于饱和的趋势。     

爆炸驱动铁电体电源快脉冲产生技术

以发展轻小型高电压脉冲驱动源为出发点,提出采用爆炸驱动铁电体作为初级电源,通过电感储能与电爆炸丝断路开关进行脉冲压缩和功率放大,探索基于爆炸驱动铁电体电源的小型化高电压快脉冲产生技术。从爆炸驱动铁电体电源的全电路模型和铁电陶瓷材料特性出发,通过理论分析和仿真研究,分别对大电流模式和高电压模式的爆炸驱动铁电体电源的物理参数进行了设计,获得了铁电体电源工作模式和电路参数对产生高电压脉冲的影响规律,认为铁电体电源高电压模式更适合于与断路开关技术结合产生高电压快脉冲,并通过实验对该技术原理进行了验证。实验中铁电体电源输出电流约360 A、脉宽约3.8 μs,对17.5 nF电容器充电至75 kV,电容器放电后在电爆炸断路开关中产生峰值大于12 kA的脉冲电流,最终在X射线二极管负载上获得了电压峰值大于180 kV、前沿3 ns、脉宽30 ns、电流峰值3.4 kA的高电压快脉冲。     

介质壁加速器用固态脉冲形成线设计与实验

设计和研制了一种CaO-TiO2-Al2O3复合陶瓷平板固态脉冲形成线,以期用于介质壁加速器。该脉冲形成线的几何参数为:陶瓷介质长度300mm,宽度15mm,厚度1mm;银电极长度280mm,宽度2mm。电性能参数为:相对介电常数约23.5,特征阻抗约26Ω,电长度约4.5ns,直流耐压场强大于20kV/mm,在μs量级上升时间的脉冲电压下绝缘强度大于25kV/mm。该固态脉冲形成线设计兼顾了光导开关的使用要求、高梯度绝缘子的设计指标、带电粒子束的输运及加速器的结构设计要求。结合GaAs光导开关,开展了固态Blumlein脉冲形成线实验研究工作,在脉冲充电电压约25kV的条件下,固态Blumlein脉冲形成线实现脉冲电压输出约23kV。     

激光二极管触发的光导开关-磁开关串联型组合开关北大核心CSCD

研究了一种新型的基于硅光导开关和磁开关串联的组合开关,相比于传统的磁开关,该开关能将数十μs的充电脉冲直接压缩到数十ns。比较了采用激光二极管触发时组合开关与单一硅光导开关的性能,结果表明,组合开关输出电流提高,前沿及脉宽均大幅减小,组合开关可以降低硅光导开关对触发光功率的需求,从而使得采用激光二极管实现硅光导开关触发成为可能。     

Fast high-voltage pulse generation using nonlinear capacitors

Many pulsed power applications require short high-voltage pulses with a high-repetition rate. Conventional high-voltage discharge pulse-switches such as thyratrons, spark gap switches, and vacuum tube switches have a short lifetime, whereas the semiconductor switches have a long lifetime and high reliability. The semiconductor switches, however cannot be directly applied to fast high-voltage pulsed power generation due to their limited operating voltage ratings despite their relatively long switching times. Therefore, they are used with voltage amplification and a pulse compression stage. This paper describes two pulse generators that use the semi-conductor switches and nonlinear capacitors: one is based on an opening switch (IGBT) and inductive energy storage, the other is a combination of a closing switch (RSD) and capacitive energy storage     

光导开关研究进展及其在脉冲功率技术中的应用

 概述了GaAs光导开关的发展历史,通过对GaAs和SiC进行比较指出,SiC由于禁带宽度大、击穿场强高、电子饱和漂移速度大、热导率高等优势被认为是更好的光导开关材料。比较了本征光电导和非本征光电导的不同之处,报道了利用本征光电导和非本征光电导的SiC光导开关的最新进展。介绍了光导开关在超宽带源和紧凑型脉冲功率系统中的应用,提出了SiC光导开关进一步发展的关键技术并进行了展望。     

Pulsed intense electron beams generated in transient hollow cathodedischarges: fundamentals and applications

For the commercial application of pulsed power, material processing with intense pulsed particle beams is a very interesting subject. Recently, high-voltage (1-70 kV), low-pressure (1-100 Pa) transient hollow-cathode discharges turned out to be sources for pulsed intense electron beam generation suitable for this application. The remarkable parameters of these electron beams-beam currents of 50-1000 A (10-30% of the maximum discharge current) with a high energy component (mean energy of about 0.25-0.75 of maximum applied voltage) of 20-70% of the maximum beam current, power density up to 10 W/cm², beam diameters of 0.1-3 mm, beam charge efficiency of 3-5%-captured the attention not only of the scientific community in the last decade. The electron beam is emitted during the early phases of the discharge, and only weak dependence of the high energetic peak of the beam current was found on the external capacity, which determine the development of the later high-current phases. However, the beam parameters depend on the breakdown voltage, gas pressure, and discharge geometry (including self-capacity). In this paper, the characteristics of the pulsed intense electron beams generated in two configurations-multigap pseudosparks and preionization-controlled open-ended hollow-cathode transient discharges (PCOHC)-are described. Such electron beams already were used successfully in a variety of pulsed power applications in material processing, deposition of superconducting (YBaCuO) and diamond-like thin films, microlithography, electron sources for accelerators, and intense point-like X-ray sources, and some preliminary experiments revealed new potential applications such as pumping of short-wavelength laser active media. These pulsed electron beams could be used further in any kind of pulsed power applications that require high-power density, small or high electron energy, and small-beam diameters     

Pulsed Power Opening Switch Research at the University of New Mexico

Opening switch research at the University of New Mexico (UNM) is directed toward moderate-current (~10 kA) devices with potential applications to high-power charged particle accelerators. Two devices with the capacity for controlling gigawatt high-voltage circuits, the grid-controlled plasma flow switch and the scanned-beam switch, are under investigation. Both switches are conceptually simple; they involve little collective physics and are within the capabilities of current technology. In the plasma flow switch, the flux of electrons into a high-voltage power gap is controlled by a low-voltage control grid. Plasma generation is external to, and independent of, the power circuit. In the closed phase, plasma fills the gap so that the switch has a low on-state impedance. Pulse repetition rates in the megahertz range should be feasible. In single-shot proof-of-principle experiments, a small area switch modulated a 3-MW circuit; a 20-ns opening time was observed. The scanned-beam switch will utilize electric field deflection to direct the power of a sheet electron beam. The beam is to be alternately scanned to two inverse diodes connected to output transmission lines. The switch is expected to generate continuous-wave pulse trains for applications such as high-frequency induction linacs. Theoretical studies indicate that 10-GW devices in the 100-MHz range with 70-percent efficiency should be technologically feasible.     

200 kV/200 kA脉冲源的研制

研制了一台200 kV/200 kA脉冲源,脉冲源由初级储能单元、水介质整形与传输单元、气体开关和负载组成。通过优化设计由2 到1 的水介质变阻抗线、高压气体主开关和陡化开关,使得脉冲功率源在匹配负载下产生输出电压200 kV、电流200 kA、前沿40 ns、脉宽40 ns的高压脉冲。在此脉冲源平台上已开展了低阻抗1 二极管发射特性研究,并且将在高压气体开关、同步触发、二极管等离子体发射诊断等方面发挥作用。     

50 kV半绝缘GaAs光导开关

 设计了横向结构的半绝缘GaAs光导开关,开关由600 μm厚的半绝缘GaAs晶片制成,电极间隙为20 mm。在不同的直流偏置电压下,使用波长为1 064 nm、能量为9.9 mJ的激光脉冲触发使开关导通,开关置于0.2 MPa的SF6气体环境中。在施加直流50 kV电压的情况下,使用Rogowski线圈测得开关的最大导通电流为1.1 kA。对实验结果进行分析表明：随着初始偏置电压的升高,回路流过的电荷与电容初始储存的电荷的比值不断提高,但都没有达到100%,即非线性模式下光导开关的关断原因并不是由于外电路的能量已经耗尽。对非本征光电导的情况,计算出开关的通态电阻为2.71 Ω。     

基于SOS的脉冲功率源技术新进展

 研制了基于SOS的胡杨200和胡杨700脉冲功率源。给出了胡杨200和胡杨700的电路原理、组成结构和实验波形。介绍了在SOS脉冲功率源上开展的高重复频率强流电子束产生、长寿命阴极实验、绝缘介质的高重复频率击穿实验和低引导磁场无箔二极管等实验研究进展。经测试，胡杨200在2 kHz重复频率、负载阻抗200 Ω下，输出电压200 kV，脉冲宽度约35 ns，平均输出功率大于10 kW；在300 Hz条件下可连续运行。胡杨700同样为全固态脉冲功率源，其设计指标:输出电压700 kV，电流5 kA，脉冲宽度约40 ns；经初步调试在150 Ω电阻负载上单脉冲输出指标达到660 kV，4.4 kA，脉宽约70 ns。