首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到3条相似文献,搜索用时 0 毫秒
1.
In this paper, we propose to present the prospects for mid-term needs for infrared detectors. These needs are derived from expected evolutions in imaging techniques as well as from operational requirements. The main trends that shall allow the direct development in infrared detection are as much the pursuit of greater range, a better discrimination of targets, as the efforts to minimize cost, volume, weigh and consumption. These trends will lead to an examination of the specific needs for some kind of ‘smart’ infrared detector. Among these applications, we will investigate more deeply the technological requirements for flash and 3D imaging, hyperspectral and uncooled imaging. To cite this article: J.-C. Peyrard, C. R. Physique 4 (2003).  相似文献   

2.
The objective of this paper is to describe the first behavioural models of cooled (based on HgCdTe photodetectors) infrared sensors which were designed at CEA-LETI/SLIR. In this way, the interest of such an approach in the evaluation and improvement of optronic systems will be shown. The paper first presents the modelling approach (architecture of the models, choice of parameters, tools for modelling and calibration, …). Then models are compared to measurements on real components in order to verify the efficiency of the modelling approach. To cite this article: P. Castelein, C. R. Physique 4 (2003).  相似文献   

3.
The emergence of uncooled detectors has opened new opportunities for IR detection for both military and commercial applications. Development of such devices involves a lot of trade-offs between the different parameters that define the technological stack. These trade-offs explain the number of different architectures that are under worldwide development. The key factor is to find a high sensitivity and low noise thermometer material compatible with silicon technology in order to achieve high thermal isolation in the smallest area as possible. Ferroelectric thermometer based hybrid technology and electrical resistive thermometer based (microbolometer) technology are under development. LETI and ULIS have chosen from the very beginning to develop first a monolithic microbolometer technology fully compatible with commercially available CMOS technology and secondly amorphous silicon based thermometer. This silicon approach has the greatest potential for reducing infrared detector manufacturing cost. After the development of the technology, the transfer to industrial facilities has been performed in a short period of time and the production is now ramping up with ULIS team in new facilities. LETI and ULIS are now working to facilitate the IRFPA integration into equipment in order to address a very large market. Achievement of this goal needs the development of smart sensors with on-chip advanced functions and the decrease of manufacturing cost of IRFPA by decreasing the pixel pitch and simplifying the vacuum package. We present in this paper the technology developed by CEA/LETI and its improvement for being able to designs 384×288 and 160×120 arrays with a pitch of 35 μm. Thermographic application needs high stability infrared detector with a precise determination of the amount of absorbed infrared flux. Hence, infrared detector with internal temperature stabilized shield has been developed and characterized. These results will be presented. To cite this article: J.-L. Tissot, C. R. Physique 4 (2003).  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号