First principles study on electronic structure of β-Ga2O3

We have studied the electronic structure of β-Ga₂O₃ using the first principles full-potential linearized augmented plane wave method. It is found that β-Ga₂O₃ has an indirect band gap with a conduction band minimum (CBM) at Γ point and a valence band maximum on the E line. The anisotropic optical properties are explained by the selection rule of the band-to-band transitions. On the other hand, the shape of the CBM is almost isotropic and, therefore, the observed electronic anisotropy in the n-type semiconducting state should not be attributed to the properties of a perfect lattice. The Burstein-Moss shift is discussed using the effect of several allowed transitions between the levels of the valence band and the CBM.     

Cathodoluminescence of copper and nickel surfaces

Cathodoluminescence spectra of clean and oxidized Cu(100) and Ni(100) surfaces, using 60–1000 eV electron bombardment, has been measured. A broad peak at 310 nm has been observed for both clean Cu and Ni surfaces. This peak is attributed to radiative recombination of electrons from the point X'₄ with holes at the point X₅ of the energy band diagram. A narrow peak at 520 nm has been found to correlate with the growth of oxide on the Cu and Ni surfaces. This peak can be attributed to electronic transitions involving energy levels of the O^2- ions. The cathodoluminescence technique appears useful for studying the initial growth of metal oxides.     

Luminescence of LaBr3: Ce,Hf crystals under photon excitation in the ultraviolet,vacuum ultraviolet,and X-ray ranges

This study has been carried out using synchrotron radiation, time-resolved luminescence ultraviolet and vacuum ultraviolet spectroscopy, optical absorption spectroscopy, and thermal activation spectroscopy. It has been found that, in scintillation spectrometric crystals LaBr₃: Ce,Hf characterized by a low hygroscopicity, along with Ce³⁺ centers in regular lattice sites, there are Ce³⁺ centers located in the vicinity of the defects of the crystal structure. It has also been found that the studied crystals exhibit photoluminescence (PL) of new point defects responsible for a broad band at wavelengths of 500–600 nm in the PL spectra. The minimum energy of interband transitions in LaBr₃ is estimated as E _g ～ 6.2 eV. The effect of multiplication of electronic excitations has been observed in the range of PL excitation energies higher than 13 eV (more than 2E _g ). Thermal activation studies have revealed channels of electronic excitation energy transfer to Ce³⁺ impurity centers.     

Effects of alloying on the band structure of gold: Piezoreflectance measurements on some AuCo and AuV alloys

Piezoreflectance measurements have been made on a series of gold cobalt and gold vanadium alloys with impurity concentrations of up to 4% using a strain amplitude of 4 × 10^?4 at a frequency of 68 kHz. The spectra show that the main interband transitions occur at 2.4, 3.5 and 4.5 eV. The deformation potentials with impurity concentration have been found for these transitions. An additional interband transition was found to occur at an energy of 1.8eV and this was enhanced significantly with impurity concentration. This may be due to the impurity causing a broadening of the d bands and hence a smearing of the interband threshold or alternatively it may be caused by a d band to Fermi level transition along the Δ direction close to the X point.     

The factors contributing to the band gap bowing of the dilute nitride GaNP alloy

The factors contributing to the band gap bowing of the dilute nitride GaNP are analyzed. It is found that the band gap bowing is due to two factors. One is the coupling interaction between the N level and the Γ conduction band minimum of GaP. The other is the coupling interaction between the N level and the X conduction band minimum of GaP. We also estimate the band gap reduction due to each factor. It is found that the band gap bowing is mainly due to the coupling interaction between the N level and the Γ conduction band minimum of GaP.     

Electronic structure of copper halides CuI and CuCl: A comparative X-Ray photoelectron and absorption spectroscopy study

The energy distributions of the occupied and unoccupied electronic states for copper halides CuCl and CuI have been investigated using X-ray photoemission and absorption spectroscopy with a highenergy resolution on the equipment of the Russian-German beamline for outlet and monochromatization of synchrotron radiation from the electron storage ring BESSY II. A quasi-molecular analysis of the obtained experimental spectra has revealed that there is a fundamental similarity of the energy structures of the valence band and the conduction band of copper halides CuX (X = Cl, I) due to the identical atomic structure of the studied compounds. The differences in the positions of individual energy subbands in the valence band and the conduction band of CuX and in their intensities in the spectra are associated with different degrees of hybridization of the Cu 3d, 4s and X(n + 1)s, np valence states, as well as with different sizes of structural units (CuCl₄ and CuI₄ quasi-molecules) of the studied crystals.     

Fine structure in optical transitions from 3d and 4d core levels to the lower conduction band in Ga-V and In-V compounds

We investigate fine structure in energy derivative reflectance (EDR) spectra near 20–21 eV in GaP, GaAs, and GaSb, and near 18–20 eV in InP, InAs, and InSb. Derived energy values for X^c₁ thresholds in GaP and GaSb, and L^c₁ and X^c₁ thresholds in GaAs, agree well with previous Schottky barrier electroreflectance (ER) results. L-X structure splittings in EDR spectra of InAs and InSb, for which Schottky barrier ER measurements cannot be performed, are 0.29 and 0.44 eV, respectively. Estimates of expected locations of these structures, based on XPS and absorption data and band structure calculations, indicate energy deficits of 0.2 eV for In4d-L^c₁ and 0.5 eV for In4d-X^c₁ transitions, respectively.     

High-resolution,laser-induced fluorescence spectroscopy of nascent IF: Determination of X- and B-state molecular constants

Nascent IF molecules are prepared in a crossed molecular beam experiment in different vibrational-rotational manifolds of the X¹Σ⁺ electronic ground state using the reactions F + CF₃I → IF + CF₃ and F + ICI → IF + Cl. High-resolution, laser-induced fluorescence spectroscopy is applied for precision measurements of the bandhead structure of 13 transitions of the IF B → X system (0 ≦ v′ ≦ 4, 3 ≦ v″ ≦ 9). A splitting of the resolved ro-vibronic lines of the order of 500 MHz is observed which is due to the nuclear electric quadrupole interaction. Band origins are derived from the excitation spectra in the vicinity of the band heads. Dunham coefficients are presented for the X¹Σ⁺ and the B³Π(O⁺) state, based on a simultaneous fit of the laser-induced fluorescence data obtained in this work, as well as of the microwave spectroscopy data of Tiemann et al. (Z. Naturforsch. a28, 1405–1407) and of original flame emission spectra of Durie (Canad. J. Phys.44, 337–352).     

Electronic band structure of partially inverse spinel MgIn2S4 as calculated by the semiempirical pseudopotential method

The electronic band structure of the partially inverse spinel MgIn₂S₄ has been calculated on the symmetry lines ΓΛL, ΓΔX and ΓΣK by the semiempirical pseudopotential method. The general features of the band structure of MgIn₂S₄ are quite similar to those of the normal spinel CdIn₂S₄. The conduction band minimum is located at Γ and the valence band maximum is along the Σ line. The indirect energy gap (Γ_1cΣ_4v) is 2.50 eV. The effects of magnesium vacancy and variations in the cation distribution and in the parameter u are examined and shown to be small.     

Electronic photodissociation spectra of the Arn-C4H2 (n=1-4) weakly bound cationic complexes

Electronic spectra of a series of weakly bound clusters consisting of argon (Ar_n, n=1-4) bound to the butadiyne cation, C₄H₂⁺, have been recorded in the visible range from 440 to 520 nm by photodissociation. The C₄H₂⁺ fragment signal was recorded as a function of the laser wavelength during excitation of the A←X electronic transition. The observed transitions were assigned to the band origin of the cationic complexes and to vibronic bands involving excitation of the ν₃ and ν₇ vibrational modes of the C₄H₂⁺ moiety, as well as combination bands of these modes. Comparison of the photodissociation spectra of the various clusters reveals a small blue shift, 25 cm⁻¹ of the band maxima relative to the corresponding transitions reported from gas phase spectra of the bare C₄H₂⁺ cation. The magnitude of the blue shift of each band increases with successive Ar solvation up to n=3. Furthermore, each band becomes increasingly broadened towards the red with the addition of Ar atoms due to an increasing number of unresolved transitions involving excited intermolecular modes.     

Doppler-limited dye laser excitation spectroscopy of HCCl

The cw dye laser excitation spectrum of the $\text{A}\text{?}{}^1\text{A″(050) ←}\text{X}\text{?}{}^1\text{A′(000)}$ vibronic band of HCCl was observed between 16 539 and 16 656 cm^?1 with the Doppler-limited resolution, 0.03 cm^?1. The HCCl molecule was generated by the reaction of discharged CF₄ with CH₃Cl. The observed spectra were assigned to c-type transitions with ΔK_a = ±1 and also to axis-switching transitions with ΔK_a = 0 or ?2, but all with K′_a = 0, both for HC³⁵Cl and HC³⁷Cl. A rotational analysis yielded the rotational constants and quartic centrifugal distortion constants for the ground vibronic state and the band origin. A weak vibronic band, about one-third as intense as the main band, was found at about 57 cm^?1 to the violet of the main band for both isotopic species, and was ascribed to a transition from the ground vibronic state to a vibrational level, possibly (041), of the à state. The rotational levels of HC³⁵Cl in the à state showed a large perturbation; the J′ = 8, 9, and 10 levels were found to be split into two components. A normal coordinate analysis was carried out to calculate the centrifugal distortion constants and the inertia defect, which were in fair agreement with the observed values. The molecular structure of HCCl in the ground vibronic state was recalculated from the rotational constants of the two isotopic species combined with the 0.75B₀ + 0.25C₀ value previously reported for DC³⁵Cl.     

Electron energy loss spectroscopy study of the initial stage of lanthanum oxidation

The electron energy loss spectra (EELS) of a pure metallic lanthanum surface and variations in these spectra at the initial stages of surface oxidation were studied. The measurements were performed at primary-electron beam energies E _p from 200 to 1000 eV. A very pronounced peak at a loss energy of about 7.5 eV arises due to transitions from the La4d electronic states of the valence band into the empty La4f electronic states of the conduction band at 5.0–5.5 eV above the Fermi level. Marked changes are observed in the EELS during the oxidation of lanthanum: the peak at an energy of 7.5 eV disappears, and the peak at 13.5 eV corresponding to bulk collective energy loss in lanthanum oxide becomes more pronounced. The results obtained are discussed in terms of the electronic structure of lanthanum and lanthanum oxide.     

Exciton absorption,photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP

Optical absorption data on In_1?xGa_xP are reported showing the first observation of the exciton absorption peak in a III-V ternary alloy. This allows the most accurate determination to date of both the composition dependence of the Γ band gap and the position of the Γ ? X crossover (x_c = 0.72, 77°K; x_c = 0.73, 300°K). Absorptio and photoluminescence spectra are compared for both direct and indirect In_1?xGa_xP. In addition, absorption, photoluminescence, and luminescence lifetimes of In_1?xGa_xP:N are examined. These data suggest that the A-line is perturbed by alloy disorder and forms a broad luminescence band for x ? 0.94. The observed Stokes shift for the N-trap in the alloy is characteristic of an impurity strongly coupled to the lattice. The temperature dependence of the N luminescence band is found to be well described by the conventional configuration-coordinate model for phonon-coupled impurity luminescence. Implications of these results for light emitting devices are mentioned.     

氮铁共掺锐钛矿相TiO2电子结构和光学性质的第一性原理研究

本文采用基于密度泛函理论的平面波超软赝势方法研究了N,Fe共掺杂TiO₂的晶体结构、电子结构和光学性质.研究表明,N,Fe共掺杂TiO₂的晶格体积、原子间的键长及原子的电荷量发生变化,导致晶体中产生八面体偶极矩,并因此光生电子-空穴对有效分离,提高TiO₂的光催化活性;N,Fe共掺杂同时在导带底和价带顶形成了杂质能级,使TiO₂的禁带宽度变窄,光吸收带边红移到可见光区,这些杂质能级可以降低光生载流子的复合概率,提高Ti     

High-resolution infrared spectrum and analysis of the ν1 band of CF337Cl

The rotational structure of CF₃³⁷Cl ν₁ band has been investigated using spectra of trifluorochloromethane in natural isotopic abundance, recorded with a tunable diode laser spectrometer. The spectra analyzed have been obtained by keeping the sample at low temperature (～200 K) to minimize the strong interference arising from “hot” band transitions. The K structure of many P(J) and R(J) multiplets has been resolved and positively identified: the maximum J value reached in the P and R branches was 38 and 40, respectively. About 650 unblended lines have been used for the least-squares fit to the energy expression including the quartic centrifugal distortion coefficients. Molecular constants for the ν₁ band of CF₃³⁷Cl have been derived. A weak perturbation affecting the rotational levels with K = 18 and J′ ≥ 36 has also been observed.     

MBiO2Cl(M=Ca，Sr，Ba)材料的合成、能带计算及发光性能研究

采用固相合成方法制备出CaBiO₂Cl,SrBiO₂Cl和BaBiO₂Cl粉体,研究了该Sillen系列铋基氧卤化合物的光学带隙、电子结构及发光性能.基于密度泛函理论计算表明,SrBiO₂Cl和BaBiO₂Cl均为直接带隙半导体材料,与吸收光谱实验结果相符合.在X射线和紫外光激发下三者均具有宽的可见光发射带(400—550nm),尤其是BaBiO₂Cl粉体的光输出强度约为Bi 关键词： 光致发光 电子结构 Sillen化合物     

High resolution laser induced fluorescence excitation spectroscopy of jet-cooled terrylene

High resolution laser induced fluorescence excitation spectra upon absorption in the A¹B_3u ← X¹A_g band of jet-cooled terrylene have been recorded. Precise energies of three vibronic transitions are deduced. Low lying vibrations are found in both electronic states. Rotational constants in ground and excited state are determined by band contour analysis. Terrylene is a medium-size polycyclic aromatic hydrocarbon (PAH) and a possible carrier of diffuse interstellar bands (DIB). The results of the jet experiments are discussed regarding the PAH-DIB hypothesis.     

Impurity centers in ZnSe:Na crystals

The influence of sodium impurity on photoluminescence (PL) spectra of ZnSe crystals doped in a growth process from a Se+Na melt is investigated. It is shown that the introduction of the impurity results in emergence of emission bands in the PL spectra due to the recombination of exciton impurity complexes associated with both donors and hydrogen-like acceptors. Apart from that, four bands generated by donor-acceptor pairs recombination and a band produced by electronic transitions from the conduction band to a shallow acceptor are discussed. As a result of the analysis it is concluded that Na impurity forms in ZnSe lattice Na_Zn hydrogen-like acceptors with activation energy of 105±3 meV, Na_i donor centers with activation energy of 18±3 meV, as well as Na_ZnV_Se and Na_iNa_Zn associative donors with activation energy of 35±3 and 52±9 meV, respectively.     

A first-principles study of the electronic structure of the sulvanite compounds

We have investigated by means of first-principles total energy calculations the electronic structure of the sulvanite compounds: Cu₃VS₄, Cu₃NbS₄ and Cu₃TaS₄; the later is a possible candidate as a p-type transparent conductor with potential applications in solar cells and electrochromic devices. The calculated electronic structure shows that these compounds are indirect band gap semiconductors, with the valence band maximum located at the R-point and the conduction band minimum located at the X-point. The character of the valence band maximum is dominated by Cu d-states and the character of the conduction band minimum is due to the d-states of the group five elements. From the calculated charge density and electron localisation function we can conclude that the sulvanite compounds are polar covalent semiconductors.     

High resolution laser spectroscopy of the titanium monohalides, TiCl and TiBr

The electronic spectra of the titanium monohalides, TiCl and TiBr, have been investigated in the blue-violet region using a laser ablation molecular beam spectrometer. Five subbands assigned as ⁴Γ_5/2-X⁴Φ_3/2 (0, 0), ⁴Γ_5/2-X⁴Φ_3/2 (1, 1), ⁴Γ_5/2-X⁴Φ_5/2 (0, 0), ⁴Γ_7/2-X⁴Φ_5/2 (0, 0) and ⁴Γ_7/2-X⁴Φ_7/2 (0, 0) were observed and recorded at both low and high-resolution for titanium monochloride. A Hund’s case (a) rotational analysis has been carried out for the ⁴⁸Ti³⁷Cl and ⁴⁸Ti³⁵Cl isotopic species, and polynomial analyses for these, as well as the ⁴⁶Ti³⁵Cl, ⁴⁷Ti³⁵Cl, ⁴⁹Ti³⁵Cl, and ⁵⁰Ti³⁵Cl isotopologues have been completed. The same spectral region yielded several molecular transitions for titanium monobromide, 10 of which were recorded at high resolution. Six of these have been attributed to a ⁴Γ-X⁴Φ electronic transition at 23 484 cm⁻¹, while the remaining four have been assigned to a second ⁴Γ-X⁴Φ electronic transition at 23 613 cm⁻¹. A Hund’s case (a) global analysis has been carried out for the ⁴⁸Ti⁷⁹Br and ⁴⁸Ti⁸¹Br isotopologues.