A comparative study of Mannosylerythritol lipids (MELs) surfactant adsorption upon the Al12N12 and B12N12 nano-cages as potential candidates for detecting MELs

Aluminum nitride and boron nitride nanocages have recently been discovered. The properties of these compounds vary according to their size. In this paper, we study the adsorption of MELs on aluminum nitride and boron nitride nanocages in the solution phase using density functional theory. The results of adsorption energies indicate that during the adsorption on aluminum nanocages, ether oxygen atoms show stronger adsorption, while adsorption is stronger on boron nitride nanocage from the hydroxyl group oxygen. The results of thermodynamic calculations indicate that all adsorption positions of aluminum nitride are thermodynamically favorable. However, in the case of boron nitride, some positions are thermodynamically unfavorable. In terms of recovery time, borne nitride is not a good adsorbent because of very small recovery time. The aluminum nitride may be able to behave as a suitable sensor for the MELs in the solution phase. Nevertheless, boron nitride does not have this capability, since it does not significantly change the number of conducting electrons.     

氮化硼催化低碳烷烃氧化脱氢的活性起源探讨（英文）

页岩气的急速开采推动了以天然气替代石油的资源革命.除主组分甲烷外,天然气、页岩气中还包含大量乙烷、丙烷等低碳烷烃资源,将这些储量丰富的碳资源直接转化为烯烃等基础化学品有望革新以原油为基础的化学工业.现有烷烃催化脱氢制烯烃工艺中,直接脱氢过程吸热、热力学受限,且存在催化剂迅速失活的难题;而氧化脱氢是放热过程、无平衡限制,也无积碳等引发催化剂失活的问题,有利于提高反应效率、降低能耗,代表了更为高效和经济的新路线.但作为一个热力学爬坡过程,目前金属氧化物催化剂上烯烃产物很容易深度氧化到CO_2,选择性仍有待提高.非金属氮化硼能够有效活化低碳烷烃中的C-H键,促进烷烃氧化脱氢,并能够有效抑制深度氧化产物的生成,解决低碳烷烃临氧脱氢过程中产物易深度氧化的固有难题.本文综述了近期氮化硼在乙烷、丙烷、丁烷等低碳烷烃氧化脱氢制烯烃反应中的研究进展.以丙烷氧化脱氢为例,通过比较文献报道的几种氮化硼材料的氧化脱氢性能,发现羟基化氮化硼显示了最高的烯烃选择性和时空收率,以20.6%的丙烷转化率为基准,烯烃选择性超过90%,而时空收率可达6.8 golefin gcat~(-1) h~(-1).在此基础上,本文重点讨论了对于氮化硼材料催化活性起源的认识.主要实验事实和结论包括:氮化硼自身几乎没有氧化脱氢活性,而在烷烃氧化脱氢反应条件下存在活性诱导期;活性诱导期伴随着氮化硼边沿氧官能团化过程;氮化硼边沿B-O官能团没有脱氢活性,而B-OH官能团参与了氧化脱氢过程,辅助分子氧引发低碳烷烃脱氢反应;分子氧在羟基氮化硼边沿解离活化,反应过程中与边沿结构氧存在动态交换;氮化硼边沿羟基化定向合成过程可显著增强氧化脱氢反应活性.氮化硼作为一类新型烷烃氧化脱氢催化剂,目前正处于研究的初始阶段.因此,本文最后总结了一些关于氮化硼烷烃脱氢催化体系仍需深入研究的科学问题.     

Carrier-Induced Modification of Palladium Nanoparticles on Porous Boron Nitride for Alkyne Semi-Hydrogenation

Chemical modifiers enhance the efficiency of metal catalysts in numerous applications, but their introduction often involves toxic or expensive precursors and complicates the synthesis. Here, we show that a porous boron nitride carrier can directly modify supported palladium nanoparticles, originating unparalleled performance in the continuous semi-hydrogenation of alkynes. Analysis of the impact of various structural parameters reveals that using a defective high surface area boron nitride and ensuring a palladium particle size of 4–5 nm is critical for maximizing the specific rate. The combined experimental and theoretical analyses point towards boron incorporation from defects in the support to the palladium subsurface, creating the desired isolated ensembles determining the selectivity. This practical approach highlights the unexplored potential of using tailored carriers for catalyst design.     

Electronic structures and transport properties of fluorinated boron nitride nanoribbons

By applying the nonequilibrium Green's functions and the density-functional theory, we investigate the electronic structures and transport properties of fluorinated zigzag-edged boron nitride nanoribbons. The results show that the transition between half-metal and semiconductor in zigzag-edged boron nitride nanoribbons can be realized by fluorination at different sites or by the change of the fluorination level. Moreover, the negative differential resistance and varistor-type behaviors can also be observed in such fluorinated zigzag-edged boron nitride nanoribbon devices. Therefore, the fluorination of zigzag-edged boron nitride nanoribbons will provide the possibilities for a multifunctional molecular device design.     

Determination of boron and nitrogen in boron nitride

Improved techniques are described for the determination of boron and nitrogen in pure boron nitride. Controlled fusion of boron nitride with sodium carbonate in a muffle furnace is followed by a potentiometric titration of the boric acid. A special quartz vessel is described for the determination of nitrogen. The boron nitride is fused with sodium hydroxide and the resulting ammonia is swept into a receiver and titrated with standard hydrochloric acid. Boron and nitrogen values with their standard deviation are given for a typical pure boron nitride.     

Electronic structure of octagonal boron nitride nanotubes

The effect of an octagonal lattice configuration on a boron nitride nanotube is explored using first principle calculations. Calculations show that the formational energy of an octagonal boron nitride nanotube (o‐BNNT) is an exothermic reaction. Boron and nitrogen atoms within an o‐BNNT have an average of 2.88 electrons and 9.09 electrons, respectively, indicating ionic‐like bonding. In addition, the electronic structure of the octagonal boron nitride nanotube shows semiconductive properties, while h‐BNNT is reported to be an insulator. Additional o‐BNNTs with varying diameters are calculated where the results suggest that the diameter has an effect on the binding energy and bandgap of the o‐BNNT. The defect sites of the o‐BNNT are reactive against hydrogen where a boron defect is particularly reactive. Thus, this work suggests that physical and chemical properties of a boron nitride nanotube can be tailored and tuned by controlling the lattice configuration of the nanotube.     

Structural Characteristics of Hydrogenated Carbon and Boron Nitride Nanotubes: Impact of H?H Interactions

The structural characteristics of perhydrogenated carbon and boron nitride nanotubes are determined by means of quantum chemical calculations. Two families of nanotubes are systematically studied for both carbon and boron nitride, the nanotubes being derived from the perhydrogenated (110) and (111) sheets of diamond and cubic boron nitride. Single‐walled perhydrogenated carbon nanotubes prefer structures analogous to the (111) sheet. In clear contrast, the single‐walled perhydrogenated boron nitride nanotubes prefer structures analogous to the (110) sheet. The significantly different structural characteristics are due to the polarization of hydrogen atoms in the perhydrogenated boron nitride nanotubes. The presence of attractive electrostatic H? H interactions leads to a strong preference for multilayering of the boron nitride sheets and nanotubes. The results are expected to provide new insights into the structural characteristics of main‐group binary hydrides.     

Preparation of SiBN films deposited by MOCVD

SiBN films were prepared by the MOCVD method using triethylsilane and triethylboron as source materials. The SiBN films were a mixture of boron nitride and silicon nitride determined by IR spectra. The relationship between the ratio of mixture and the preparation condition is clarified. The ratio of silicon nitride to boron nitride in the films was proportional to the ratio of triethylsilane to triethylboron under a large excess of ammonia flow condition. The reaction temperature also influenced the ratio of boron nitride and silicon nitride in the films. The deposition rate of the film increased up to 800°C with a maximum at 1000°C, and decreased up to 1300°C with small value. The crystallinity of SiBN films was very poor because the crystal growth was obstructed.     

High-Resolution 14N Solid-State NMR Spectroscopy

Even without expensive isotope enrichment, it is possible to obtain nitrogen NMR parameters in the solid state. The isotropic chemical shifts in hexagonal and cubic boron nitride, and for the hexagonal modification also the quadrupole coupling, can thus be obtained for the first time. The recorded ¹⁴N MAS NMR spectrum (28.809 MHz) of hexagonal boron nitride is shown on the right.     

Hydrogen adsorption on carbon-doped boron nitride nanotube

The adsorption of atomic and molecular hydrogen on carbon-doped boron nitride nanotubes is investigated within the ab initio density functional theory. The binding energy of adsorbed hydrogen on carbon-doped boron nitride nanotube is substantially increased when compared with hydrogen on nondoped nanotube. These results are in agreement with experimental results for boron nitride nanotubes (BNNT) where dangling bonds are present. The atomic hydrogen makes a chemical covalent bond with carbon substitution, while a physisorption occurs for the molecular hydrogen. For the H(2) molecule adsorbed on the top of a carbon atom in a boron site (BNNT + C(B)-H(2)), a donor defect level is present, while for the H(2) molecule adsorbed on the top of a carbon atom in a nitrogen site (BNNT + C(N)-H(2)), an acceptor defect level is present. The binding energies of H(2) molecules absorbed on carbon-doped boron nitride nanotubes are in the optimal range to work as a hydrogen storage medium.     

Hollow boron nitride (BN) nanocages and BN-nanocage-encapsulated nanocrystals

Hollow boron nitride (BN) nanocages (nanospheres, image on the left) and BN-nanocage-encapsulated GaN nanocrystals (right) have been synthesized by using a homemade B-N-O precursors. The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm. The nanocages have crystalline structures. Peanutlike nanocages with double walls have also been observed; their internal space is divided into seperated compartments by the internal walls. The method is extended to sheathe nanocrystals with BN nanocages; BN-shell/GaN-core nanostructures have been successfully fabriacted. The method may be generally applicable to the fabrication BN-sheathed nanocrystals.     

Investigation of the boron nitride/polybenzoxazine interphase

The influence of a hexagonal boron nitride powder surface on the polymerization of a benzoxazine monomer is examined by differential scanning calorimetry (DSC). By varying the thickness of the benzoxazine coatings on boron nitride particles, a distinct influence of the surface substrate on the polymerization reaction could be observed. At a coating thickness calculated to be on the order of a monolayer, the heat of reaction is reduced, while the exothermic peak temperature and peak width at half height are increased relative to that of the neat resin values. The reduced heat of reaction and increased exothermic peak temperature indicate that the boron nitride surface is inhibiting the benzoxazine polymerization reaction. In the intermediate coating thickness region, the heat of reaction increases and the exothermic peak temperature and peak width at half height decrease with increasing coating thickness. With even thicker coatings, the heat of reaction and exothermic peak temperature and peak width at half height reach values corresponding to that of the neat resin and no longer change with thickness. In addition, the influence of surface treated boron nitride particles on the thermal polymerization behavior, as well as the effect of the surface treatment on the viscosity, dynamic mechanical properties, and flexural properties of the filled composites are also investigated. © 1999 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 37: 2360–2372, 1999     

Surface study of hexagonal boron nitride powder by diffuse reflectance Fourier transform infrared spectroscopy

The surface chemistry of hexagonal boron nitride powder is examined. Surface functional groups are found to consist of a mixture of primary and secondary amine groups as well as hydroxyl groups. The surface has a net basic character indicating that the amine contribution to the overall surface chemistry is greater than that of the acidic hydroxyl contribution. A chemical surface treatment also is performed to modify the surface chemistry of hexagonal boron nitride powder. Copyright © 2005 John Wiley & Sons, Ltd.     

Dispersible Shortened Boron Nitride Nanotubes with Improved Molecule‐Loading Capacity

The oxidation process of boron nitride nanotubes was thoroughly investigated, and a slow oxidation characteristic was clearly revealed. Subsequently, the controllable oxidation process was utilized to break the sturdy structure of the boron nitride nanotubes to fabricate shortened nanotubes. The shortened boronnitride nanotubes were found to possess good solubility in water and many organic solvents. Further experiments demonstrated remarkably improved molecule‐loading capacity of the shortened boron nitride nanotubes. These dispersible shortened boron nitride nanotubes might have the potential to be developed as effective delivery systems for various molecules, which may find applications in bio‐related fields.     

Effect of hexagonal boron nitride on poly(vinyl phosphonic acid) composite polymer electrolytes for fuel cells

In this work, hexagonal boron nitride nanoparticles were used as inorganic fillers, which increase the mechanical and thermal stabilities as well as the proton conductivity of the proton conducting composite membranes prepared by blending of poly(vinyl phosphonic acid) and hexagonal boron nitride. Thermo gravimetric analysis showed that the polymer electrolyte membranes are thermally stable up to 200°C. Scanning electron microscopy analysis indicated the homogeneous distribution of boron nitride nanoparticles in the polymer matrix. The crystallinity of the membranes was characterized by using X-ray Diffraction. X-ray patterns support semi-crystalline nature of the composite materials.     

硼氮纳米管研究进展

介绍了BN纳米管的研究进展,纳米管结构和制备技术发展状况,阐述了包括电弧放电、激光烧蚀、机械球磨、碳纳米管取代反应、热淬火法、碳热法和化学反应法等多种制备方法,展望了BN纳米管的发展前景.     

毛刺状竹节结构氮化硼纳米管的合成与生长机理

以非晶硼和氧化镍纳米颗粒为原料,在氨气中1100℃下合成了毛刺状竹节结构的氮化硼纳米管. 利用X射线衍射和透射电镜研究了氮化硼纳米管的结构和形貌. 竹节结构纳米管表面的毛刺是六方氮化硼的纳米薄片. 提出了一种基于固态硼和气态二氧化硼扩散的毛刺形貌生长机理.     

Sol‐Gel‐Process in the Ammono‐System – a Novel Access to Silicon Based Nitrides

Controlled coammonolysis of elementalkylamides in aprotic organic solvents at low temperatures have been shown to result in the formation of polyazanes. The synthetic procedure developed may be addressed as “sol‐gel‐route in the ammono system”. Pyrolysis of these novel polymer precursors gave access to multinary nitrides. For the model systems Si(NHMe)₄/B(NMe₂)₃, Si(NHMe)₄/Ti(NMe₂)₄, and Si(NHMe)₄/Ta(NMe₂)₅ polymeric boro‐, titano and tantalosilazanes were obtained. Pyrolysis in ammonia at 1000 °C yielded amorphous silicon boron nitride, silicon titanium nitride and silicon tantalum nitride powders; further heating of the nitride powders at 1500 °C in nitrogen atmosphere led to the formation of partly crystalline composites of α‐Si₃N₄ and amorphous silicon boron nitride for the Si/B/N system, a composite of finely dispersed TiN and amorphous silicon titanium nitride for the Si/Ti/N system, and crystalline TaN and amorphous silicon nitride for the Si/Ta/N system. Furthermore, the structure and pyrolysis chemistry of the polymeric intermediates, as well as the morphology of the pyrolysis products, were studied by NMR, MAS‐NMR, FT‐IR, DTA‐TG‐MS, XRD, SEM, EDX and elemental analyses.     

Moisture–absorption,dielectric relaxation,and thermal conductivity studies of polymer composites

In the search for new packaging materials for the electrical/electronics industry, three types of polymer composites have been studied. Silicone/boron nitride powders, polyurethane/alumina powders, and polyurethane/carbon fibers have all been synthesized to study the moisture–absorption kinetics, thermal conductivities, and the dielectric loss spectra under various levels of humidity. The water uptake data indicate that water molecules are absorbed not only by the polymer matrix, but also by the interfaces introduced by the fillers. For all materials, the dielectric relaxation spectroscopy shows the presence of a peak in the 175–200 K range, which is largely due to absorbed water. The silicone/boron nitride samples absorbed the least amount of moisture. Incorporating this result with the thermal conductivity data of the three types of polymer composites, it is concluded that silicone polymers embedded with boron nitride can best serve as the coating for the electronic devices that require heat dissipation and moisture resistance, in addition to electrical insulation. © 1998 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 36: 2259–2265, 1998