衬底温度对PLD法生长的Mg0.05Zn0.95O薄膜结构和发光特性的影响

用脉冲激光沉积(PLD)法在不同温度的Si(111衬底上成功制备了c轴择优取向的Mg0.05Zn0.95O薄膜.通过X射线衍射(XRD)和光致发光谱(PL)研究了衬底温度对Mg0.05Zn0.95O薄膜结构和发光特性的影响,探讨了膜的结晶质量与发光特性之间的关系.结果表明,在衬底温度为450℃时生长的Mg0.05Zn0.95O薄膜具有很好的轴取向和较强的光致发光峰.室温下分别用激发波长为240,300和325nm的氙灯作为激发光源得到不同样品的PL谱,分析表明紫外发光峰和紫峰来源于自由激子的复合辐射且发光强度与薄膜的结晶质量密切相关,蓝绿发光峰与氧空位有关.此外,探讨了衬底温度影响紫外光致发光峰红移和蓝移的可能机理.     

石英玻璃衬底上纤锌矿Mg0.25Zn0.75O薄膜的结构及光学性能

Mg_xZn_1-xO材料是一种新型光电功能材料.采用溶胶凝胶法在石英玻璃上制备了Mg_0.25Zn_0.75O薄膜,理论结合实验研究了Mg_0.25Zn_0.75O薄膜的结构和光学性能.研究表明,石英玻璃衬底上Mg_0.25Zn_0.75O薄膜呈六方纤锌矿结构,薄膜均匀,平均粒径约为20nm.吸收光谱表明吸收带边始于3 关键词： 0.25Zn_0.75O薄膜')" href="#">Mg_0.25Zn_0.75O薄膜 溶胶凝胶法 石英玻璃衬底 紫外发光     

Mg0.57Zn0.43O合金薄膜生长及性能表征

本文利用金属有机气相沉积法(MOCVD)生长单一立方相Mg_0.57Zn_0.43O (记作立方MZO)合金薄膜, 以及该合金薄膜在后期热处理过程中质量和热稳定性的关系. 通过X射线衍射等测试发现, 后期热处理对于立方MZO合金薄膜质量具有较大的影响. 其中在500–850℃的条件下, 合金薄膜的结晶质量和表面形貌随温度的增加得到明显的改善, 吸收截止边逐渐蓝移,带隙展宽, 但仍保持单一立方结构. 当温度达到950℃时立方MZO合金薄膜出现混合相. 通过对立方MZO合金薄膜制备的MSM型单元器件进行光响应的测试表明, 在外加15 V的偏压下, 器件的响应峰值在260 nm附近,紫外/可见抑制比大约为4个数量级, 饱和响应度为3.8 mA/W, 暗电流值为5 pA左右. 关键词： MOCVD 0.57Zn_0.43O')" href="#">Mg_0.57Zn_0.43O 热处理 光响应     

射频磁控溅射法生长MgxZn1-xO薄膜的结构和光学特性

用射频磁控溅射法在80℃的衬底温度下制备出Mg_xZn_1-xO(0≤x ≤030)薄膜.x射线 衍射(XRD)结果表明，Mg_xZn_1-xO薄膜为单相六角纤锌矿结构， 没有形成任何显著 的MgO分离相，Mg_xZn_1-xO薄膜的择优取向平行于与衬底垂直的 c轴；c轴晶格常数随着Mg含量的增加逐渐减小.在Mg_xZn_1-xO薄膜的光透射谱中出现 锐利的吸收边，由透 射谱估算出Mg_xZn_1-xO薄膜的带隙宽度由332eV(x=0)线性地 增加到396eV(x=030). 关键词： xZn_1-xO薄膜')" href="#">Mg_xZn_1-xO薄膜 射频磁控溅射 Mg含量     

衬底对原位氧化制备的ZnO薄膜结构和光学性质的影响

 采用射频反应溅射法在不同衬底上制备Zn₃N₂薄膜,然后对其原位氧化制备ZnO薄膜。利用X射线衍射分析(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)等表征技术研究了不同衬底对ZnO薄膜的结晶特性和发光性能的影响。XRD研究结果显示:Zn₃N₂薄膜在500 ℃原位氧化3 h后完全转变为ZnO薄膜,在玻璃和熔融石英衬底上制备的多晶ZnO薄膜无择优取向,而单晶硅（100）衬底上的多晶ZnO薄膜具有较好的沿（002）方向的择优取向。PL测试结果显示:硅和熔融石英衬底上的多晶ZnO薄膜发光性能良好,激子复合产生的紫外发光峰很强,且半高宽较窄,而来自于深能级发射的绿色发光峰很弱;而玻璃衬底上的多晶ZnO薄膜发光性能较差。     

衬底对原位氧化制备的ZnO薄膜结构和光学性质的影响

采用射频反应溅射法在不同衬底上制备Zn3N2薄膜,然后对其原位氧化制备ZnO薄膜。利用X射线衍射分析(XRD)、扫描电子显微镜(SEM)和光致发光谱(PL)等表征技术研究了不同衬底对ZnO薄膜的结晶特性和发光性能的影响。XRD研究结果显示:Zn3N2薄膜在500 ℃原位氧化3 h后完全转变为ZnO薄膜,在玻璃和熔融石英衬底上制备的多晶ZnO薄膜无择优取向,而单晶硅（100）衬底上的多晶ZnO薄膜具有较好的沿（002）方向的择优取向。PL测试结果显示:硅和熔融石英衬底上的多晶ZnO薄膜发光性能良好,激子复合产生的紫外发光峰很强,且半高宽较窄,而来自于深能级发射的绿色发光峰很弱;而玻璃衬底上的多晶ZnO薄膜发光性能较差。     

衬底温度对氧化锌薄膜的光谱学特性影响研究

采用脉冲激光沉积技术,在不同沉积温度下制备了氧化锌薄膜。对衬底温度为400和700℃的薄膜进行了结构和光谱学性能表征。结果表明:沉积温度为400和700℃时,氧化锌薄膜均为C轴取向生长;但是表面晶粒生长模式由岛状生长转为柱状晶生长,柱状晶的出现导致了氧化锌薄膜拉曼光谱信号的增强、谱线的展宽、以及拉曼禁戒模式的出现;氧化锌UV峰由3.29 eV红移到3.27 eV,这可能是由于沉积温度为700℃时,氧化锌颗粒尺寸显著增大造成的。     

生长温度对ZnO薄膜晶体质量和发光特性的影响

采用激光脉冲沉积法在Si(100)衬底上生长ZnO薄膜,衬底温度分别为室温,200℃,300℃,400℃和500℃.用X射线衍射仪、拉曼光谱、扫描电子显微镜对薄膜的微结构进行了测量,并测量了室温下薄膜的光致发光特性.结果表明,300℃时.ZnO具有最佳择优取向,随着衬底温度升高.衍射峰半峰全宽减小,薄膜晶粒尺寸增大,400℃时,薄膜具有各向等大的品粒尺寸.同时拉曼谱结果显示,薄膜内部的缺陷随衬底温度变化无明显差别,应力表现为张应力,400℃时应力最小,紫外发光峰在衬底温度为400℃时最强,而黄绿光带最弱.在减少薄膜缺陷,提高择优长向和晶粒尺寸的同时.使晶粒横向尺寸和纵向尺寸尽可能相同,可极大提高薄膜的发光特性.     

生长温度对6H-SiC上SiCGe薄膜发光特性的影响

利用低压化学气相淀积工艺在6H-SiC衬底成功制备了SiCGe薄膜。通过光致发光(PL)谱研究了生长温度对SiCGe薄膜发光特性的影响。结果表明:生长温度为980,1030,1060℃的SiCGe薄膜的室温光致发光峰分别位于2.13,2.18,2.31eV处;通过组分分析和带隙计算,认定该发光峰来自于带间辐射复合,证实了改变生长温度对SiCGe薄膜带隙的调节作用。同时,对SiCGe薄膜进行了变温PL测试,发现当测试温度高于200K时,发光峰呈现出蓝移现象。认为这是不同机制参与发光所造成的。     

Microstructures, surface bonding states and room temperature ferromagnetisms of Zn0.95Co0.05O thin films doped with copper

Zn_0.95−xCo_0.05Cu_xO (ZCCO, where x = 0, 0.005, 0.01 and 0.015) thin films were deposited on Si (1 0 0) substrates by pulsed laser deposition technique. Crystal structures, surface morphologies, chemical compositions, bonding states and chemical valences of the corresponding elements for ZCCO films were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and X-ray photoelectron spectroscopy (XPS). XRD and FESEM results indicate that crystallite sizes of the highly (0 0 2)-oriented ZCCO films slightly decrease with increasing Cu content. When the Cu content increases from 0 to 0.015, Zn 2p_3/2, Co 2p, Cu 2p_3/2 and O 1s peaks of the ZCCO film shift towards higher or lower binding energy regions, and the reasons for these chemical shifts are investigated by fitting the corresponding XPS narrow-scan spectra. Both in-plane and out-of-plane magnetization-magnetic field hysteresis loops of the ZCCO films reveal that all the films have room temperature ferromagnetisms (RTFMs). The conceivable origin of the RTFM is ascribed to the combined effects of the local structural disorder resulted from (Co²⁺, Cu²⁺, Cu¹⁺)-cations which substitute Zn²⁺ ions in the ZnO matrices, ferromagnetic coupling between coupled dopant atoms caused by Co²⁺ (3d⁷4s⁰) and Cu²⁺ (3d⁹4s⁰) spin states, and exchange interactions between the unpaired electron spins originating from lattice defects induced by Cu doping in the Zn_0.95Co_0.05O matrices.     

白宝石衬底上生长的MgxZn1-xO晶体薄膜的结构和光学性能

在白宝石（sapphire）衬底上低温外延生长出了Mg_xZn_1-xO晶体薄膜.x射线衍射（XRD）及能量色散x射线（EDX）分析表明，Mg_xZn_1-xO薄膜的晶体结构依赖于薄膜中Mg的组分x，随着Mg组分的增大，Mg_xZn_1-xO薄膜的结构从与ZnO晶体一致的六方结构转变为与MgO晶体一致的立方结构.对Mg_xZn_1-xO薄膜的紫外透 关键词： 电子束蒸发反应 xZn_1-xO晶体薄膜')" href="#">Mg_xZn_1-xO晶体薄膜 结构和光学性能     

制备工艺对Zn1-xMgxO薄膜结构及光学性能的影响

采用脉冲激光沉积（PLD）方法在单晶Si（100）衬底上沿c轴方向生长单晶Zn_1-xMg_xO薄膜,通过X射线衍射（XRD）、原子力显微镜（AFM）、扫描电镜（SEM）和荧光光谱（PL）研究了膜厚、Mg含量、退火温度及氧气氛等制备工艺对Zn_1-xMg_xO薄膜的结构、形貌和光学性质的影响.实验结果表明,Mg含量x≤0.15时, Zn_{关键词： 1-x}Mg_xO薄膜')" href="#">Zn_1-xMg_xO薄膜 制备工艺 结构 光学性质     

Influence of substrate temperature on structures and dielectric properties of pyrochlore Bi1.5Zn1.0Nb1.5O7 thin films prepared by pulsed laser deposition

The influence of substrate temperature on structural and dielectric properties of cubic pyrochlore Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films prepared by pulsed laser deposition process has been investigated. BZN thin films were deposited on Pt/Ti/SiO₂/Si(1 0 0) substrate and in situ annealed at 700 °C. The results indicate that the substrate temperature has a significant effect on the structural and dielectric properties of BZN thin films. The films exhibit a cubic pyrochlore structure in the substrate temperature range from 550 °C to 700 °C and at the annealing temperature of 700 °C. With further increase of substrate temperature to 750 °C, the phases of Bi₂O₃, BiNbO₄ and Bi₅Nb₃O₁₅ can be detected in the XRD pattern due to the Zn loss. The dielectric constant and loss tangent of the films deposited at 650 °C are 192 and 6 × 10⁻⁴ at 10 kHz, respectively. The tunability is 10% at a dc bias field of 0.9 MV/cm.     

The optical properties of MgxZnl-xO thin films

Mg_xZn_1-xO thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at 60℃. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The refractive indices of Mg_xZn_1-xO films are studied at room temperature by spectroscopic ellipsometry over the wavelength range of 400--760\,nm at the incident angle of 70℃. Both absorption coefficients and optical band gaps of Mg_xZn_1-xO films are determined by the transmittance spectra. While Mg content is increasing, the absorption edges of Mg_xZn_1-xO films shift to higher energies and band gaps linearly increase from 3.24.eV at x=0 to 3.90\,eV at x=0.30. These results provide important information for the design and modelling of ZnO/ Mg_xZn_1-xO heterostructure optoelectronic devices.     

利用脉冲激光沉积技术在双轴织构的Ni基带上外延CeO2薄膜

利用脉冲激光沉积技术在氢还原气氛下成功地在双轴织构的Ni基带上外延了高质量的CeO₂薄膜. x射线衍射θ—２θ扫描和ω扫描结果表明，CeO₂薄膜在Ni基带上呈c轴方向生长，存在很强的平面外织构；极图和φ扫描显示它具有良好的平面内织构. Ni基片上织构的CeO₂薄膜为进一步在其上外延高质量的YBa₂Cu₃O_7-x超导薄膜提供了很好的模板. 关键词： 双轴织构的Ni基带 2薄膜')" href="#">CeO₂薄膜 脉冲激光沉积     

Laser spectroscopy of CaF2:Eu:Sm thin films grown by pulsed laser deposition

Thin films of CaF₂ co-doped with low concentrations of Eu and Sm ions were grown by pulsed laser deposition (PLD) using a KrF (λ=248 nm) as the ablation source. To the best of our knowledge, the work presented here is the first report of rare-earth-doped CaF₂ films grown by PLD with this source. Combined laser excitation-emission spectroscopy was used to map out electronic transitions of Eu³⁺ with ⁷F₀→⁵D₁ excitation and the ⁵D₀→⁷F₁ emission. At the low concentrations used here the crystal field center of cubic symmetry is dominant in the films that are same for laser targets. However, charge compensated centers are present in the bulk crystal precursor. The removal of the charge compensated centers in the films and the target is likely caused by the target preparation where high pressure and temperature were applied.