Influences of KrF laser irradiation on the structure and luminescence of ZnO single crystal

<正>In this paper,we investigate the laser irradiation of ZnO single crystals and its influence on photoluminescence.Our study shows that the photoluminescence of ZnO single crystals strongly depends on surface morphologies.The ultraviolet emissions of laser treated-ZnO under 200 mJ/cm~2 become stronger,whereas for those deteriorated by irradiation above 200 mJ/cm~2,the green emissions centred at 2.53 eV are significantly enhanced with a red-shift to 2.19 eV,probably due to the changes in the charge states of the defects.Enhanced yellow-green emissions are well resolved into four peaks at around 1.98,2.19,2.36,and 2.53 eV due to a shallow irradiation depth.Possible origins are proposed and discussed.     

ZnO压敏陶瓷介电损耗的温度谱研究

利用Novocontrol宽频介电谱仪在-100—20 ℃温度范围内测量了ZnO-Bi₂O₃系压敏陶瓷的介电频谱,其频率范围为10^-2—10⁶ Hz. 研究表明： ZnO压敏陶瓷特征损耗峰的活化能分别为0.26和0.36 eV,结合实验条件、理论计算结果及其他现象的分析排除了特征损耗峰源于阴极电子注入、夹层极化和偶极子转向极化的可能.热刺激电流（TSC）谱共出现三个峰,其中高温峰对应于TSC实验加压过程引入的热离子极化,而中温峰和低温峰对应于介电损耗峰. 在分析的基础上,提出了ZnO压敏陶瓷的特征损耗峰起源于耗尽层内本征缺陷的电子弛豫过程. 关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热刺激电流     

Raman spectroscopy and Fermi resonance in Mn-doped ZnO bulk single crystal

For the first time the bulk oriented single crystals ZnO:Mn are obtained and the polarized Raman spectra are studied at excitation in the visible and near infrared regions. The resonance enhancing of the Raman scattering by Mn-related modes is found at the visible excitation due to the extra optical absorption in ZnO at the addition of Mn. It is shown that the resonance-enhanced overtone of Mn-related silent modes may be responsible for an appearance of anomalous modes of the A₁ symmetry at 500-600 cm⁻¹. A Fermi resonance between the overtone and one-phonon mode is analyzed.     

Dielectric spectroscopy of the SmQ* phase

Liquid crystal possessing two biphenyl moieties in the molecular core and lateral chlorine substitution far from the chiral chain has been studied by dielectric spectroscopy. On cooling from the isotropic phase, the material possesses the frustrated smectic Q* (SmQ*) and SmC_A* phases. It has been confirmed by dielectric spectroscopy that the SmQ* phase can be related to the SmC_A* anti-ferroelectric phase. However, only one relaxation process has been observed in the SmQ* phase, while in the SmC_A*, two relaxations are clearly detectable. It seems that the mode found in the SmQ* can be connected with high-frequency anti-phase mode observed in the SmC_A* phase. Its relaxation frequency is similar to P_H relaxation frequency, but is weaker. The same relaxation has been observed even a few degrees above the SmQ*–Iso phase transition. Another explanation for the mode detected in SmQ* and isotropic phases can be molecular motions around short molecular axis.     

ZnO压敏陶瓷的介电谱

在-160℃-200℃温度范围内、0.1 Hz-0.1 MHz频率范围内测量了 ZnO压敏陶瓷的介电频谱, 发现可以采用电导率谱低频端的类直流特性来表征晶界Schottky势垒的电子输运过程, 获得的Schottky势垒高度为0.77 eV. 基于背靠背双Schottky势垒模型, 提出当存在直流偏压时, 势垒高度将随直流偏压线性增大. 基于此势垒模型计算了ZnO压敏陶瓷单晶界的直流偏压大小, 进而计算出晶粒平均尺寸为6.8 μm, 该理论值与通过扫描电子显微镜断面照片获得的测量值的偏差在5%以内. 可见采用介电谱不但可以获得势垒高度实现电气性能的表征, 还能获得晶粒尺寸实现显微结构的表征.     

Brillouin scattering study on elastic and piezoelectric properties of laser irradiated ZnO single crystals

Brillouin light scattering technique can be successfully used to determine the whole set of elastic and piezoelectric constants of a ZnO single crystal irradiated by different laser energy densities,into a micron range (radiation layer thickness).It is found that the scattering intensity,the linewidth and the Brillouin scattering shift of acoustic phonons are all strongly dependent on laser energy density.Based on the sound propagation equations and these results,the directional dependences of the compressional and shear moduli of the irradiated ZnO sample in the (001) plane are investigated.It is found that under an appropriate laser condition,248 nm KrF excimer laser irradiation can significantly improve the surface quality and increase the elastic properties of ZnO single crystal.This procedure has potential applications in the fabrication of ZnO-based surface acoustic wave and optic-electronic devices.     

钇掺杂钨酸铅晶体中的极化子和导纳谱

在室温至160 ℃范围内测量了掺钇钨酸铅(PWO∶Y)晶体的直流电导率,证明此时的载流子为极化子.观察到极化子由能带导电到跳跃导电转变引起的电导率极小.在此温区的交流导纳分析给出的交流电导率比直流电导率大三个数量级,说明此时的交流电导率主要是复介电常数的贡献.当样品的电导率和介电常数均随频率而变化时,从交流测量只能得到样品的总的导纳谱，而不能将其中的电导谱和介电谱分开. 关键词： 钨酸铅 电导谱 介电谱 导纳谱 极化子     

Spontaneous formation of single crystal ZnO nanohelices

This paper reports a novel helix-like ZnO nanostructure with several tens of nanometres in thickness synthesized on a gold-coated Si substrate by thermal evaporation of zinc sulfide powder at 1020°C. Transmission electron microscope characterization shows that as-synthesized ZnO nanohelices extend along [01\bar 11] direction and the axial direction of the helix is along [0001] direction. A catalyst-intervened dislocation-induced growth mechanism has been suggested to explain the formation of the helix-like ZnO nanostructures. This study opens a new route to construct helix-like ZnO nanostructures by different evaporation sources.     

单晶光纤损耗谱测量装置

本文描述了一套用以测量单晶光纤损耗谱的装置。本装置由卤钨灯,单色仪,积分球,AgORbCs光电倍增管以及数据采集,处理和控制系统组成。可测量300～1150nm的光谱范围。利用本装置可获得单晶光纤的吸收光谱,透过率谱,散射光谱以及散射位置谱。     

单晶合金激光熔凝过程中晶向对单晶完整性的影响

运用几何模型对单晶合金激光熔凝过程中激光扫描方向与[100]方向夹角ξ变化时熔池内的枝晶生长方向和速度进行了计算,研究了ξ增大时不同晶向区域的分布变化规律.发现随着ξ的增大, 0]区域增大,[010]区域减小,且熔池两边不同部分速度差别增强.根据速度变化规律,构造出了熔池不同部位的过冷区域变化图,说明了可能出现新晶粒的趋势变化,并与实验结果进行了比较,揭示了在晶向不同的交界区域产生新晶粒的内在机理. 关键词： 单晶合金 激光熔凝 晶向 组成过冷     

Dielectric spectroscopy of a high-polarization ferroelectric liquid crystal

Dielectric spectroscopy investigations in the frequency range 50?Hz to 1?MHz have been carried out on a new ferroelectric liquid-crystalline material (S-(-)-4-(2-n-hexylpropionyloxy)biphenyl-4′-(3-methyl-4-decyloxy)benzoate) possessing a relatively large spontaneous polarization (P _s?～?240?nC?cm^?2) and containing a lateral methyl group on the aromatic ring of the alkoxybenzoate unit. The effect of temperature on the dielectric relaxation modes has been investigated in the SmC* and N* phases. From dielectric dispersion data, relaxation frequency and dielectric strength of all detected relaxation modes have been evaluated and discussed. A new surface-like mode of relaxation frequency ～11?kHz and dielectric strength 3.8, is seen to appear in the SmC* phase.     

Dielectric and structural relaxation phenomena in Na0.5Bi0.5TiO3 single crystal

Abstract

Dielectric permittivity studies of Na_0.5Bi_0.5TiO₃ single crystals in a broad range of frequency up to 10 MHz and temperature 300—823 K are reported. In this temperature range dielectric dispersion below 1 MHz has been found. The obtained data were fitted to the Cole-Cole relation. The mean relaxation time τ is strongly temperature dependent (0.04 ? 2.6 × 10^?5 s). A remarkable hysteresis effect in the values of τ on cooling and heating took place. The Δε(T) dependence (the maximal value of Δε ～ 400) is similar to the global ε′(T) response at low frequency. An isothermal structural transformation in Na_0.5Bi_0.5TiO₃ was observed by X-ray measurements. The order of the time in which the transformation takes place (～300 minutes) corresponds to the time in which the strongest time evolution of electric permittivity and time changes of dielectric dispersion were detected.     

ZnO压敏陶瓷中缺陷的介电谱研究

从理论上证明了介电松弛过程在介电谱上等效于电子松弛过程,认为室温下10⁵Hz处特征损耗峰起源于耗尽层处本征缺陷所形成的电子陷阱.在-130—20℃范围内测量了三种配方ZnO陶瓷的介电频谱,发现ZnO压敏陶瓷室温下10⁵Hz处的特征损耗峰在低温下分裂为两个特征峰,认为它们起源于耗尽层中的本征缺陷(锌填隙或/和氧空位)的电子松弛过程.发现ZnO-Bi₂O₃二元系陶瓷特征峰仅仅由锌填隙引起,而ZnO-Bi_{2关键词： ZnO压敏陶瓷 本征缺陷 介电谱 热处理}     

Femtosecond pulse laser-induced self-organized nanostructures on the surface of ZnO crystal

This paper reports self-organized nanostructures observed on the surface of ZnO crystal after irradiation by a focused beam of a femtosecond Ti：sapphire laser with a repetition rate of 250kHz. For a linearly polarized femtosecond laser, the periodic nanograting structure on the ablation crater surface was promoted. The period of self-organization structures is about 180 nm. The grating orientation is adjusted by the laser polarization direction. A long range Bragglike grating is formed by moving the sample at a speed of 10μm/s. For a circularly polarized laser beam, uniform spherical nanoparticles were formed as a result of Coulomb explosion during the interaction of near-infrared laser with ZnO crystal.     

Comparative characterization of differently grown ZnO single crystals by positron annihilation and Hall effect

High-quality ZnO single crystals of dimensions 10×10×0.3 mm³, grown either using a pressurized melt or a hydrothermal growth approach, have been investigated in their as-received state and are compared regarding their properties revealed by positron annihilation and Hall effect measurements. By positron annihilation performed at room temperature it is found that the pressurized melt grown crystals contain a certain amount of Zn+O divacancies, but no Zn vacancies are detected, whereas the hydrothermally grown crystals contain a dominating defect yet unknown in its structure but possibly connected to the Zn vacancy. Furthermore, the influence of an additional refined chemical–mechanical polishing of the crystal surface by a special procedure on the depth distribution of vacancy-type defects is demonstrated. Hall measurements, performed in the temperature range 20–325 K, showed that the crystal growth method has a strong influence on the carrier mobility, and the estimated acceptor densities also differ significantly in both types of crystal.     

Compositional origin of surface roughness variations in air-annealed ZnO single crystals

We directly investigated the chemical compositional origin of surface roughness variations in air-annealed ZnO single crystal samples for annealing temperatures up to 1000 °C. Atomic Force Microscopy (AFM) showed temperature-dependent changes in surface roughness and morphology, with a maximum in surface roughness of 2 nm found for samples annealed at 400 °C. The O(1s) line, measured by X-ray Photoelectron Spectroscopy (XPS) showed a maximum for Zn(OH)₂ and a minimum for off-stoichiometric ZnO at 400 °C; while the Zn(2p) peaks show an increase in slope at that temperature. These results indicate that the roughness arises from Zn diffusion and loss of surface oxygen.     

ZnO单晶的微区光致发光特性研究

ZnO单晶材料以其优良的综合性能在光电子器件方面掀起了研究热潮,因此对ZnO单晶的研究具有重要的理论和实践意义。采用激光辐照的方式,对ZnO单晶进行了光致发光(photoluminescence, PL)光谱实验,分析研究了ZnO单晶在不同温度(低温)和不同激光能量强度照射下其光致发光特性。研究结果表明,ZnO单晶内存在少量杂质及表面氧缺陷,这些结构对其发光特性有一定的影响;在低温条件下,ZnO单晶具有良好的发光特性,且随着温度的提高,发光光谱峰的位置会向长波长方向移动,但强度会减小;当激光光源的强度增大,ZnO单晶的PL发射光谱的强度也会随之增大,且峰的位置和相对强度不变。结合拉曼(Raman)光谱实验,从分子及原子振动、转动类型验证了纤锌矿ZnO单晶的六方晶系结构;配合X射线衍射(X-ray diffraction, XRD)技术,得出ZnO单晶良好的结晶特性以及晶轴取向。     

Dielectric investigation on some binary mixtures of hockey-stick-shaped liquid crystal and octyloxy-cyanobiphenyl

We report the measurement of temperature-dependent dielectric parameters in some binary liquid crystal mixtures comprising of a hockey-stick-shaped mesogen 4-(3-decyloxyphenyliminomethyl) phenyl-4-decyloxycinnamate (SF7) and calamitic compound 4′-octyloxy-4-cyanobiphenyl (8OCB). All the investigated mixtures possess a large positive dielectric anisotropy (Δε), although a noticeable reduction has been found by increasing the diverse-shaped dopant concentration. Investigation on the pretransitional behavior in the vicinity of isotropic to nematic (I–N) phase transition suggesting a tricritical character for all the studied mixtures. Parameterization of dielectric permittivity close to the nematic to smectic-A (N–Sm-A) phase transition exhibits non-universal values of the critical exponents describing a second-order nature of the transition. Systematic variation of critical exponents against dopant concentration and McMillan ratio reveals a well consistency with those obtained from the high-resolution optical birefringence measurements.     

ZnO:Ga晶体对硬X射线的时间及能量响应

 介绍了ZnO:Ga晶体对重复频率快脉冲硬X 射线的时间响应,利用X射线荧光分析仪测量了ZnO:Ga晶体对10～100 keV硬X射线的能量响应。结果表明:ZnO:Ga晶体对硬X射线响应的上升时间为316 ps,半高宽为440 ps;对40 keV以上的X射线的能量响应很平坦。该晶体可以作为一种新颖的硬X射线探测元件。