Order and mobility of solid vortex matter in oscillatory driving currents

We study numerically the evolution of the degree order and mobility of the vortex lattice under steady and oscillating applied forces. We show that the oscillatory motion of vortices can favor an ordered structure, even when the motion of the vortices is plastic when the same force is applied in a constant way. Our results relate the spatial order of the vortex lattice with its mobility, and they are in agreement with recent experiments. We predict that, in oscillating applied forces, the lattice orients with a principal axis perpendicular to the direction of motion.     

Some empirical relations for electron mobility in II–VI compound semiconductors

Electron mobility has been calculated in a number of binary II–VI compound semiconductors using a displaced Maxwellian distribution function and taking the various scattering mechanisms into consideration at different lattice temperatures and for various amounts of ionized impurity concentrations. It is observed that the low field mobility values can be expressed by a cubic power relationship with lattice temperature and with ionized impurity concentration using a least mean square fit technique with an accuracy better than 5 per cent. Similarly, the field dependence of mobility can also be expressed as a power series of the applied electric field. It is suggested that these equations can be profitably used for a quick estimation of mobility values as a check on experiments and also as sufficiently accurate formulae for simulation and modelling purposes.     

Lattice-controlled electron transport characteristics in quantized surface layers at low temperature

A theory of intravalley acoustic scattering of the carriers in a non-degenerate two-dimensional electron gas is developed here under the condition of low lattice temperature when the assumptions of the well-known traditional theory are not valid. The scattering rates thus obtained are then used to estimate the zero-field mobility characteristics in an n-channel Si inversion layer. It is found that the finite energy of the phonons makes the energy and lattice temperature dependence of the scattering rate, and consequently the lattice temperature dependence of the mobility, significantly different from what follows, in the light of traditional theory which assumes equipartition law for the phonon distribution and neglects the phonon energy in comparison to the carrier energy.     

Nonlinear Transport of Three-Dimensional Electron Gases Under the Influenceo f an Intense Terahertz Radiation

We present a detailed theoretical and numerical investigation on nonlinear transport of a model three-dimensional electron gas driven by an intense terahertz (THz) radiation at lattice temperature T = 10,77,300 K using the conventional and recently developed balanceequation approach. Ionized-impurity, acoustic-phonon and polar optical-phonon scatterings were taken into account for electrons in a single parabolic band. The heating of electrons and the suppression of the dc electron mobility by the irradiation of the intense THz field are predicted. We find that the dc average mobility of electrons peaks around a certain value of the amplitude of the ac field at low lattice temperature.     

Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy

The density of crystal lattice defects in Si: Er layers grown through sublimation molecular-beam epitaxy at temperatures ranging from 520 to 580°C is investigated by a metallographic method, and the Hall mobility of electrons in these layers is determined. It is found that the introduction of erbium at a concentration of up to ～5 × 10¹⁸ cm^?3 into silicon layers is not accompanied by an increase in the density of crystal lattice defects but leads to a considerable decrease in the electron mobility.     

Soliton mobility in nonlocal optical lattices

We address the impact of nonlocality in the physical features exhibited by solitons supported by Kerr-type nonlinear media with an imprinted optical lattice. We discover that the nonlocality of the nonlinear response can profoundly affect the soliton mobility, hence all the related phenomena. Such behavior manifests itself in significant reductions of the Peierls-Nabarro potential with an increase in the degree of nonlocality, a result that opens the rare possibility in nature of almost radiationless propagation of highly localized solitons across the lattice.     

Description of force surfaces in atomic force microscopy with allowance for the mobility of the lattice atoms

The surfaces of constant force and the profiles of the horizontal component of the force during scanning of the tip of an atomic force microscope above the surface of a close-packed lattice in the contact mode are calculated taking account of the mobility of the lattice atoms. It is shown that when the mobility is taken into account, the previously observed discontinuities on the surface of constant force arise at smaller scanning forces on the tip above the surface than in the immobile-atom approximation. The force surfaces arising when scanning above vacancies are obtained. The possibility of using atomic force microscopy data for diagnostics of point defects on a solid surface is discussed.     

Electron transport in II–VI compound semiconductors

The mobility characteristics of II–VI compound semiconductors have been investigated using a displaced Maxwellian model for the energy distribution of the free carriers and considering the combined effects of acoustic, piezo-electric, ionised impurity and polar optical modes of scattering. The electric field dependence of the carrier mobility has been obtained at lattice temperatures of 77° K and 300°K. The effect of variation of the not too well known coupling constants on the characteristics has been observed. The variation of the low-field mobility with the lattice temperature and with the level of impurity concentration has also been obtained. The theoretical results agree quite satisfactorily with the available experimental data and with other theoretical works.     

Gap solitons supported by optical lattices in photorefractive crystals with asymmetric nonlocality

We address the impact of the asymmetric nonlocal diffusion nonlinearity of gap solitons supported by photorefractive crystals with an imprinted optical lattice. We reveal how the asymmetric nonlocal response alters the domains of existence and the stability of solitons originating from different gaps. We find that in such media gap solitons cease to exist above a threshold of the nonlocality degree. We discuss how the interplay between nonlocality and lattice strength modifies the gap soliton mobility.     

Tunable soliton self-bending in optical lattices with nonlocal nonlinearity

We address the phenomenon of soliton self-bending in Kerr-type nonlocal nonlinear media with an imprinted transverse periodic modulation of the linear refractive index. We show that the imprinted optical lattice makes possible to control the mobility of soliton by varying the depth and the frequency of the linear refractive index modulation.     

Translationally invariant kink solutions of discrete ϕ<Superscript>4</Superscript> models

The properties of translationally invariant kinks in two discrete ϕ⁴ models are compared with those of the kinks in a classical discrete model. The translationally invariant kink solutions can be found randomly with respect to the lattice sites, i.e., their Peierls–Nabarro potential is exactly equal to zero. It is shown that these solutions have a Goldstone mode, that is, they can move along the lattice at vanishingly small velocities. Thus, the translationally invariant kink is not trapped by the lattice and can be accelerated by an arbitrary small external field and, having an increased mobility, can transfer a range of physical quantities: matter, energy, momentum, etc.     

Two-dimensional electronic transport in In0.53Ga0.47As quantum Wells

Transport properties of the electrons itinerant two dimensionality in a square quantum well of In_0.53Ga_0.47As are studied in the framework of Fermi-Dirac statistics including the relevant scattering mechanisms. An iterative solution of the Boltzmann equation shows that the ohmic mobility is controlled by LO phonon scattering at room temperature, but below 130 K alloy scattering is predominant. The calculated mobilities with a suitable value of the alloy scattering potential agree with the experimental results over a range of lattice temperature. For lattice temperatures below 25 K where the carrier energy loss is governed by the deformation potential acoustic scattering, the warm electron coefficient is found to be negative. Its magnitude decreases with increasing lattice temperature and is greater for larger channel widths. Values of the small-signal AC mobility of hot electrons at a lattice temperature of 4.2 K are obtained for different sheet carrier densities and channel widths. Cut-off frequencies around 100 GHz are indicated.Dedicated to H.-J. Queisser on the occasion of his 60th birthday     

Electrical and backscattering measurements of arsenic implanted silicon

Measurements of doping concentration and mobility of arsenic implanted silicon at high energies and at low energies with following drive-in diffusion are presented. The electrical measurements are compared with and supported by backscattering measurements. Tails which are present after short time anneals vanish during drive-in diffusion. A temperature of at least 825°C is required to fully activate the arsenic and to obtain the same mobility as in diffused samples. Backscattering data reveal an anomaly in the annealing behavior of the damage. After prolonged annealing As shows some accumulation at the surface. For drive-in diffusions lattice location experiments were performed.     

Modeling of electron-stimulated mobility and disordering of adsorbed particles

The electron-stimulated mobility and the electron-stimulated disordering of adsorbed particles is studied for a two-dimensional lattice gas model on a square lattice using kinetical Monte Carlo simulations. Pairwise nearest-neighbor repulsive interactions are considered which induce c(2 × 2) ordering of the lattice gas at low temperatures around half coverage. Adsorbed particles are allowed to perform thermally activated as well as electron-induced jumps to nearest-neighbor sites. The calculations are performed taking full advantage of the numerical power of a supermassive parallel computer.

It was found that the electron-induced mobility of adatoms causes the complete breakdown of the c(2 × 2) ordering at low temperatures if the fraction of electron-induced jumps exceeds a critical value. The breakdown of the ordering is accompanied by substantial changes of the chemical and tracer surface diffusion coefficients.     

Transient Non-Thermal Mobility of CO for CO--NO Catalytic Reaction on Square Lattice: Monte Carlo Simulation

We study a model based on precursor mechanism for CO-NO catalytic reaction on square lattice with Monte Carlo simulation. The precursor mechanism clearly demonstrates its impact on the phase diagram. The steady reactive state （SRS） gets established. The width of reactive region increases by increasing the range of precursor mobility. When the precursor mobility is increased to third-nearest neighbourhood, the second-order transition disappears.     

Kinetics of multilayer adsorption and desorption

The equations describing the nonequilibrium kinetics of multilayer adsorption and desorption are derived. The method is based on a generalized lattice gas model and includes the mobility of adsorbate particles and their mutual interactions. For the two layer adsorbate having the structure of a square lattice the isothermal adsorption characteristics are calculated.     

Mobility edges and reentrant localization in one-dimensional dimerized non-Hermitian quasiperiodic lattice

The mobility edges and reentrant localization transitions are studied in one-dimensional dimerized lattice with nonHermitian either uniform or staggered quasiperiodic potentials.We find that the non-Hermitian uniform quasiperiodic disorder can induce an intermediate phase where the extended states coexist with the localized ones,which implies that the system has mobility edges.The localization transition is accompanied by the PT symmetry breaking transition.While if the non-Hermitian quasiperiodic disorder is staggered,we demonstrate the existence of multiple intermediate phases and multiple reentrant localization transitions based on the finite size scaling analysis.Interestingly,some already localized states will become extended states and can also be localized again for certain non-Hermitian parameters.The reentrant localization transitions are associated with the intermediate phases hosting mobility edges.Besides,we also find that the non-Hermiticity can break the reentrant localization transition where only one intermediate phase survives.More detailed information about the mobility edges and reentrant localization transitions are presented by analyzing the eigenenergy spectrum,inverse participation ratio,and normalized participation ratio.     

Enhanced soliton transport in quasiperiodic lattices with introduced aperiodicity

We study linear transmission and nonlinear soliton transport through quasiperiodic structures, where the lattice profiles are described by multiple modulation frequencies. We show that resonant scattering at mixed-frequency resonances limits transmission efficiency of localized wave packets, leading to radiation and possible trapping of solitons. We obtain an explicit analytical expression for optimal quasiperiodic lattice profiles, where additional aperiodic modulations suppress mixed-frequency resonances, resulting in dramatic enhancement of soliton mobility. Our results can be applied to the design of photonic waveguide structures, and arrays of magnetic micro-traps for atomic Bose-Einstein condensates.     

Investigation of strain effect on the hole mobility in GOI tri-gate pFETs including quantum confinement

The strain impact on hole mobility in the GOI tri-gate pFETs is investigated by simulating the strained Ge with quantum confinement from band structure to electro-static distribution as well as the effective mobility. Lattice mismatch strain induced by HfO2 warps and reshapes the valence subbands, and reduces the hole effective masses. The maximum value of hole density is observed near the top comers of the channel. The hole density is decreased by the lattice mismatch strain. The phonon scattering rate is degraded by strain, which results in higher hole mobility.     

Investigation of the structure and properties of sulfur-doped expitaxial gallium arsenide layers

Conclusion The electrophysical properties, the lattice constant, and the structure of sulfur doped epitaxial gallium arsenide layers were investigated using a complex of methods. The experimental data indicate that the sulfur atoms can exist in the GaAs lattice simultaneously in the number of states, namely, in the form of substitutional and interstitial solid solutions, as well as in the form of presegregations or second phase segregations. The concentration of interstitial sulfur atoms increases with the overall-sulfur content in the layers. At the maximum sulfur doping level second phase segregations are formed in the layers, which leads to an anamolous decrease in the lattice constant and the electron mobility.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 24–27, July, 1985.The authors wish to express their gratitute to L. G. Lavrent'eva for her interest and useful remarks.