The research on suspended ZnO nanowire field-effect transistor

This paper reports that a novel type of suspended ZnO nanowire field-effect transistors (FETs) were successfully fabricated using a photolithography process, and their electrical properties were characterized by I--V measurements. Single-crystalline ZnO nanowires were synthesized by a hydrothermal method, they were used as a suspended ZnO nanowire channel of back-gate field-effect transistors (FET). The fabricated suspended nanowire FETs showed a p-channel depletion mode, exhibited high on--off current ratio of ～10⁵. When V_DS=2.5 V, the peak transconductances of the suspended FETs were 0.396 μS, the oxide capacitance was found to be 1.547 fF, the pinch-off voltage V_TH was about 0.6 V, the electron mobility was on average 50.17 cm²/Vs. The resistivity of the ZnO nanowire channel was estimated to be 0.96× 10²Ω cm at V_GS = 0 V. These characteristics revealed that the suspended nanowire FET fabricated by the photolithography process had excellent performance. Better contacts between the ZnO nanowire and metal electrodes could be improved through annealing and metal deposition using a focused ion beam.     

The dynamic angle-limited integrated scattering (DALIS) method for measuring scattering of light from optical surfaces with random roughness

A new and simple dynamic angle limited integrated scattering (DALIS) method is developed to examine optically smooth reflective surfaces with defined surface form. Our experimental results from two systems show advantages over conventional angle resolved scattering measurement (ARS) methods. By collecting scattered light in a given solid angle, our methods do not require a detection unit with an extremely large dynamic range. Unlike in the common ARS measurement method, here we use a simple linear translation stage to scan scattered light. The power spectrum density function and the autocorrelation function of the surface roughness can be recovered from the measured scattering pattern. This method can be applied to in-workshop inspection of optical polishing processes.     

GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics

GaSb p-channel metal-oxide-semiconductor field-effect transistors(MOSFETs)with an atomic layer deposited Al2O3gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated.Temperature dependent electrical characteristics are investigated.Different electrical behaviors are observed in two temperature regions,and the underlying mechanisms are discussed.It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current,which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions.Methods to further reduce the off-state drain leakage current are given.     

Design optimization of tunneling field-effect transistor based on silicon nanowire PNPN structure and its radio frequency characteristics

Recently, a number of semiconductor devices have been widely researched in order to make breakthroughs from the short-channel effects (SCEs) and high standby power dissipation of the conventional metal-oxide-semiconductor field-effect transistors (MOSFETs). In this paper, a design optimization for the silicon nanowire tunneling field-effect transistor (SNW TFET) based on PNPN multi-junction structure and its radio frequency (RF) performances are presented by using technology computer-aided design (TCAD) simulations. The design optimization was carried out in terms of primary direct-current (DC) parameters such as on-current (I_on), off-current (I_off), current ratio (I_on/I_off), and subthreshold swing (SS). Based on the parameters from optimized DC characteristics, basic radio frequency (RF) performances such as cut-off frequency (f_T) and maximum oscillation frequency (f_max) were analyzed. The simulated device had a channel length of 60 nm and a SNW radius of 10 nm. The design variable was width of the n-doped layer. For an optimally designed PNPN SNW TFET, SS of 34 mV/dec and I_on of 35 μA/μm were obtained. For this device, f_T and f_max were 80 GHz and 800 GHz, respectively.     

考虑界面散射的金属纳米线热导率修正

理论分析了声子和电子输运对Cu, Ag金属纳米线热导率的贡献. 采用镶嵌原子作用势模型描述纳米尺寸下金属原子间的相互作用, 应用平衡分子动力学方法和Green-Kubo函数模拟了金属纳米线的声子热导率; 采用玻尔兹曼输运理论和Wiedemann-Franz定律计算电子热导率; 并通过散射失配模型和Mayadas-Shatzkes模型引入晶界散射的影响. 在此基础上, 考察分析了纳米线尺度和温度的影响. 研究结果表明: Cu, Ag纳米线热导率的变化规律相似; 电子输运对金属纳米线的导热占主导地位, 而声子热导率的贡献也不容忽视; 晶界散射导致热导率减小, 尤其对电子热导率作用显著; 纳米线总热导率随着温度的升高而降低; 随着截面尺寸减小而减小, 但声子热导率所占份额有所增加. 关键词： 纳米线 热导率 表面散射 晶界散射     

基于杂散光抑制要求的光学表面粗糙度控制方法研究

光学表面加工误差引起的散射是影响光学系统成像性能的重要因素.描述表面总散射能量的均方根粗糙度是评定光学表面粗糙度的通用指标,但因其未能体现散射能量的空间分布,在表征光学表面散射对具体光学系统杂散光性能影响时存在准确度不足的局限.本文基于全积分散射及双向散射分布函数理论,针对杂散光抑制要求提出一种光学表面粗糙度控制的新方法.首先通过分析确定光学表面纹理中影响系统杂散光的空间频率范围,然后度量该频率带限范围内的表面均方根粗糙度,作为控制光学表面粗糙度的指标.以太阳磁场望远镜(MFT)为例进行方法验证,确定主镜表面纹理有效频率范围为0—18 mm~(-1),分析了主镜表面带限均方根粗糙度对MFT杂散光性能的影响.结果表明,带限均方根粗糙度与MFT杂散光性能之间的关系稳定性能大幅提高,由此验证了采用带限均方根粗糙度描述光学表面粗糙度,能更为准确地控制其对具体光学系统杂散光性能的影响.     

Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.     

高光洁度玻璃基片的表面散射和体散射测量

提出了一种利用总积分散射（TIS）测量K9玻璃基片表面散射和体散射的实验方法。首先采用磁控溅射技术在基片表面沉积厚度为几十nm的金属Ag薄膜,然后将基片的表面和体区分开考虑,通过TIS测得了基片上下表面的均方根粗糙度, 进而求得基片的总散射和表面散射,最后计算得到了体散射。分别利用TIS和原子力显微镜（AFM）测量了3个样品上表面所镀Ag膜的均方根粗糙度,两种方法所得的均方根粗糙度的数值相差不明显,差值分别为0.08,0.11和0.09 nm, 表明TIS和AFM的测量结果相一致。利用该方法测得3块K9玻璃基片的总散射分别为6.06×10-4,5.84×10-4和6.48×10-4,表面散射介于1.25×10-4~1.56×10-4之间,由此计算得到的体散射分别为3.10×10-4,3.30×10-4和3.61×10-4。     

表面效应对纳米线电极屈曲失稳的影响

纳米线电极在充/放电过程中引起电极的屈曲失稳行为可能会对结构造成力学损伤.本文针对纳米线电极结构,建立了包含锂扩散、应力、浓度影响弹性模量的多场耦合理论模型.基于构建的模型,研究了表面效应对纳米线电极屈曲失稳的影响.结果表明表面效应能够提高纳米线电极的抗屈曲性,延迟纳米线电极的临界屈曲时间.同时,表面效应的影响表现出半径尺寸和长细比的依赖性,即随着电极半径尺寸的增大而减小,而随着电极长细比的增大而增大.此外,模型还显示,在有表面效应的条件下,相对于弹性硬化属性的纳米线电极,具有弹性软化属性的电极因为具有更好的抗失稳性而更适宜作为电极材料.研究结果为纳米线电极的力学可靠性设计提供了一定的帮助.     

Spatially‐resolved and polarized Raman scattering from a single Si nanowire

We report spatially‐resolved and polarized Raman scattering results from a single Si nanowire (NW). Transmission electron microscope images show that the surface morphology of the Si NW varies from smooth to rough along the long axis. As the NW grows, the smooth surface becomes rough because of Au diffusion to the surface, resulting in the formation of facets and stacking faults. Spatially‐resolved Raman spectra along the NW long axis reveal variations in tensile strain related to the morphological changes in NW surface. The tensile strain in the top segment of the NW with a smooth surface is greater than that in the bottom segment with a rough surface. Despite the formation of facets and stacking faults, polarized Raman scattering results both from the top and bottom segments of the NW are consistent with the Raman polarization selection rules expected for a cubic crystal. Copyright © 2015 John Wiley & Sons, Ltd.     

随机粗糙微通道内流动特性研究

采用计算流体动力学的方法, 研究了微通道内气体在速度滑移和随机表面粗糙度耦合作用下的流动特性. 其中, 利用二阶速度滑移边界条件描述气体的边界滑移, 利用分形几何学建立随机粗糙表面. 研究发现, 综合考虑二阶速度滑移边界条件和随机表面粗糙度在较大的平均Knudsen数范围内 (0.025-0.59) 得到的计算结果与实验数据符合得很好, 而一阶速度滑移边界条件只在平均Knudsen数较小时(<0.1)符合实验结果. 随机表面粗糙度对气体在边界处的滑移有显著影响, 相对粗糙度越大, 速度滑移系数越小. 并针对计算结果, 给出了滑移系数与相对粗糙度近似满足的关系. 随机粗糙表面对气体流动过程中的压强、速度、Poiseuille数也有显著影响. 关键词： 随机表面粗糙度 二阶速度滑移边界条件 分形 微通道     

A facile synthesis of branched silver nanowire structures and its applications in surface-enhanced Raman scattering

We report a facile method of preparing novel branched silvernanowire structures such as Y-shaped, K-shaped and other multi-branchednanowires. These branched nanostructures are synthesized by reducingsilver nitrate (AgNO₃) in polyethylene glycol(PEG) with polyvinglpyrrolidone (PVP) as capping agent. Statisticaldata indicate that for the “y” typed branched nanowire,the branches grow out from the side of the trunk nanowire in a preferentialorientation with an angle of 55? between the branch and the trunk.Transmission electron microscopy (TEM) studies indicate that the defectson silver nanowires could support the growth of branched nanowires.Conditions such as the molar ratio of PVP/AgNO₃, the reaction temperature, and the degree of polymerization of reducingagent and PVP play important roles in determining the yield of thesilver branches. Due to the rough surface, these branched nanostructurescan be used as efficient substrates for surface-enhanced Raman scatteringapplications.     

轴对称非球面磨削表面粗糙度和波纹度的分布特性

基于光栅平行磨削的加工方式,分析磨削参数对轴对称非球面表面粗糙度的影响,揭示轴对称非球面表面粗糙度的分布规律。研究砂轮与工件加工过程的干涉现象,阐述其对轴对称非球面表面波纹度的作用机理并提出影响其分布和大小的主要因素。结合磨削实验表明,垂直磨削方向的表面粗糙度明显比平行磨削方向上的大且数值呈现中部小、边缘大的分布特点。砂轮振动和插补步距分别是平行磨削和垂直磨削方向上表面波纹度产生的主要因素。     

Remote excitation and remote detection of a single quantum dot using propagating surface plasmons on silver nanowire

Using propagating surface plasmons(SPs) on a silver nanowire(NW), we demonstrate that a focused laser light at the end of the silver NW can excite a single quantum dot(QD) microns away from the excitation spot. The QD–NW interaction allows the excited QD convert part of its energy into propagating SPs, which then can be detected at remote sites.Simultaneous multi-QD remote excitation and remote detection can also be realized. Furthermore, the tight confinement of the propagating SPs around the NW surface enables the selective excitation of QDs very close in space, which cannot be realized under the conventional excitation condition. This remote excitation and remote detection approach may find applications in optical imaging and the sensing of chemical and biological systems.     

表面钝化效应对GaAs纳米线电子结构性质影响的第一性原理研究

纳米线表面存在大量的表面态,它们能够引起电子分布在纳米线表面,使得纳米线的电学性质对表面条件变得更加敏感,严重地制约器件的性能.表面钝化能够有效地移除纳米线的表面态,进而能够有效地优化器件的性能.采用基于密度泛函理论的第一性原理计算方法研究了表面钝化效应对GaAs纳米线电子结构性质的影响.考虑了不同的钝化材料,包括氢元素、氟元素、氯元素和溴元素.研究结果表明:具有小尺寸的GaAs裸纳米线的能带结构呈间接带隙特征,表面经过完全钝化后,转变为直接带隙特征;GaAs纳米线表面经过氢元素不同位置和不同比例钝化后,展示出不同的电学性质;表面钝化的物理机理是钝化原子与纳米线表面原子通过电荷补偿移除纳米线表面的电子态;与氢元素钝化相比,GaAs纳米线表面经过氟元素、氯元素和溴元素钝化后,带隙宽度较小,原因是氟元素、氯元素和溴元素在钝化过程中具有较小的电荷补偿能力,不能完全移除表面态.     

Geometric effects on surface roughness in precipitation

We investigate the branching of an advancing precipitation front to a nonplanar shape as the solute concentration in a supersaturated solution is increased beyond its critical value. We aim to learn whether new branches can be detected by measuring the speed of the front. We present a condition that determines whether a cross section of arbitrary shape will lead to a pitchfork or to a transcritical branching. Both are possible. Rectangles and circles imply pitchfork bifurcations, equilateral triangles and hexagons imply transcritical bifurcations.     

A novel technique of laser measurement for the surface roughness

This paper describes a non-contact system for the surface roughness measurement without damage. It is suitable for various materials.     

Improving the performance of a GaAs nanowire photodetector using surface plasmon polaritons

GaAs nanowires (NWs) are ideal materials for preparing near-infrared photodetectors owing to their high charge carrier mobility and direct band gap. Although the performance of GaAs NW photodetectors can be enhanced by surface passivation or doping, it still cannot meet the requirement for applications. In this paper we propose a method to greatly improve the performances of GaAs NW photodetectors by hot-hole injection via surface plasmon polaritons. In this case, the responsivity of a single GaAs NW photodetector is increased by a fact of 3.2 to 6.56 A· W^-1 by attaching capsule-like Au nanoparticles to its surface. This research uses an efficient route to improve the NW photocurrent, which is also important for the development of a high-performance near-infrared NW photodetecor.     

截面形状对快电子激发纳米双线表面等离激元的影响

采用边界元方法研究了快电子在金属纳米双线中激发间隙表面等离激元(SPP)的性质,比较了在不同横截面形状(包括圆形、尖劈形和不规则形状)下电子所激发SPP的不同.研究表明:在以上波导结构中,快电子都能激发具有较长传播距离和较好局域性的低阶单级-单级耦合的间隙等离激元模式;同时通过对波导无量纲价值参数的比较,发现快电子在纳米双线中激发间隙等离激元对双线波导的横截面形状要求不高,横截面形状真正影响的是高阶等离激元模式的激发,而且快电子在截面形状为尖劈的双线波导中能激发局域性更强的间隙SPP.该研究将对实验中利用 关键词： 表面等离激元 间隙模式 金属纳米波导