Study of the protoporphyrin luminescence under selective laser excitation

The structural luminescence spectra of protoporphyrin IX solid solutions in ethanol and hydrochloric acid were obtained under selective laser excitation in the region of the inhomogeneouly broadened pure electronic and vibronic bands at T = 3.8 K. The dependence of the excitation selectivity on the excitation frequency was investigated. The vibrational frequencies of protoporphyrin IX were obtained in the ground and excited electronic states when the excitation frequency has been scanned in the region of pure electronic and vibronic bands, respectively. A universal apparatus is described for the investigation of the absorption and luminescence spectra of polyatomic molecules in the temperature range from 3.5 to 300 K under the dye laser excitation tunable in the spectral region 265–365 nm, 435–730 nm, detection of spectra in the region 300–900 nm with a polychromator and silicon intensified image detector and processing of the spectral information with an optical spectrum analyser controlled with a microcomputer.     

Ion spectrum under excitation of a cluster beam by a laser pulse

A model describing the decay dynamics of large charged clusters formed during the interaction of a short laser pulse with a cluster beam is constructed. It is shown that the dynamics of the evolution of the cluster plasma and the energy spectrum of ions are affected by the presence of the decay products from neighboring clusters and the electron background due to ionization. The parameters of the plasma being formed are determined as functions of the cluster beam and laser pulse parameters.     

Propagating characters of Gaussian laser beam in plasmas with non-homogeneous radial temperature distribution

We investigate the propagation regimes of laser beam in plasmas with radial distribution of electron temperature, characterized by ratio parameter of radial Gaussian distribution. By following the WKB method and paraxial approximation, the propagation equations of laser beam are derived and discussed for two nonlinearity mechanisms respectively. Both the critical curves for different ratio parameters are plotted, and it is proved that the self-focusing or self-trapping mode could be realized only when the ratio parameter excesses 1. The variations of laser beam-width are calculated, which indicates the feasibly effective modification of propagation characters by radial distribution of electron temperature.     

Photoluminescence of Si nanocrystals under selective excitation

Photoluminescence of Si nanocrystals passivated by different alkanes (hexane, octane, and tridecane) was studied at room temperature. It is shown that the emission band shape is not affected by the length of the carbon chain in the alkanes used for passivation. A pronounced fine structure of the photoluminescence band consisting of peaks separated by 150-160 meV was observed under resonant excitation. The structure is interpreted by predominant contribution from Si nanocrystal groups with particular stable size/shape existing in addition to the previously reported nanocrystals with “magic” numbers of Si atoms. The contribution of these stable nanocrystals is revealed using selective resonant photoexcitation to the higher energy states in the discrete energy spectrum of such nanocrystals.     

Simulation of temperature distribution in skin under laser irradiation with different wavelengths

With the help of numerical calculations of the finite element method, we simulate the distributions of the temperature in skin after laser irradiation with four wavelengths, 532 nm, 694 nm, 755 nm, and 800 nm, respectively. Combined metabolism of the organism with the traditional Pennes equation, the induced thermal effect in tissue is expressed. The simulated results show that the temperature in the irradiation center decreases as the increase of the wavelength for the same irradiation duration, and the relationships of the distribution of temperature and the wavelength along the radial and longitudinal directions are different.     

Morphology of Si nanowires fabricated by laser ablation using gold catalysts

Si nanowires (NWs) were fabricated successfully by laser ablation using Au as catalyst. Si wafers were used as the collector. The diameters of Si NWs ranged from 20 to 150 nm. Different forms of Si NWs were observed at different local sites inside a furnace: Si NWs with a high aspect ratio of length to diameter, Si NWs with defects and Si NWs with Au-containing nanoparticles being embedded. Especially, a nano-particle embedded Si NW is a new nanostructure that is observed for the first time. PACS 81.07.-b; 81.07.Bc; 81.16.-c; 81.20.-n     

Study of the component distribution in Si/GexSi1−x /Si heterostructures grown by molecular beam epitaxy

This paper reports on a study of the depth profile of components in GeSi heterostructures grown on low-temperature silicon (LTSi: T _gr ～ 350–400° C) and porous silicon by molecular-beam epitaxy. An excess Ge concentration was found by Auger electron spectroscopy depth profiling at the Ge_xSi_1?x /LTSi interface, which decreased in all samples subjected to annealing. The Ge diffusion activation energy was calculated to be E _a ≈ 1.6 eV in this case. An enhanced Ge concentration was also detected by x-ray photoelectron spectroscopy at the Si cap surface. Possible reasons for the surface enrichment of the silicon layer and of the Ge_xSi_1?x film interface by germanium are considered, and the relation between the component distribution and the structural features of plastically strain-relieved layers are discussed.     

Raman spectrum of Si nanowires: temperature and phonon confinement effects

The Raman spectrum of Si nanowires (NWs) is a matter of controversy. Usually, the one-phonon band appears broadened and shifted. This behaviour is interpreted in terms of phonon confinement; however, similar effects are observed for NWs with dimensions for which phonon confinement does not play any relevant role. In this context, the temperature increase induced by the laser beam is recognized to play a capital role in the shape of the spectrum. The analysis of the Raman spectrum, under the influence of the heating induced by the laser beam, is strongly dependent on the excitation conditions and the properties of the NWs. We present herein an analysis of the Raman spectrum of Si NWs based on a study of the interaction between the laser beam and the NWs, for both ensembles of NWs and individual NWs, taking account of the temperature increase in the NWs under the focused laser beam and the dimensions of the NWs.     

不同抽运光分布下端面抽运固体激光器中晶体的端面温度分布研究

为了研究不同的抽运光分布对晶体端面温度场的影响，提出一种平顶光的归类方法，并依据所提出的平顶光的归类方法划分出圆柱光、高斯光和平顶光.重点研究了圆柱光、高斯光和平顶光在不同的功率和不同的焦斑半径下端面温度分布.发现在相同的抽运功率和相同的光斑半径下圆柱光抽运时晶体的端面温度最高，平顶光次之，高斯光最小的重要结论， 说明抽运光的分布严重影响晶体端面的温度场.最后讨论了端面温度场引起的热效应对DPL光束质量的影响，发现端面热效应引起端面热透镜等效曲率半径减小,从而引起束腰半径的减小. 热效应引起热透镜等效曲率     

Self-visualization of transparent microscopic objects in optical glasses under the conditions of the thermal self-action of an illuminating laser beam

We demonstrate the process of adaptive self-visualization of small-scale transparent objects and structures in weakly absorbing optical glasses (a glass plate made of K8 and an NS-1 neutral density filter) placed in the Fourier plane of the optical system under the conditions of thermal self-action of the illuminating laser beam. The process is based on the ideology of the classical Zernike phase contrast method. The process is implemented at the level of power of radiation of the illuminated object varying from several milliwatts to tens of watts in the visible and IR spectral ranges. The conducted experiments indicate that the visualization takes place in all glasses and optical elements fabricated from them at an appropriate level of the radiation power.     

不同抽运光分布下端面抽运固体激光器中晶体的端面温度分布研究

为了研究不同的抽运光分布对晶体端面温度场的影响,提出一种平顶光的归类方法,并依据所提出的平顶光的归类方法划分出圆柱光、高斯光和平顶光.重点研究了圆柱光、高斯光和平顶光在不同的功率和不同的焦斑半径下端面温度分布.发现在相同的抽运功率和相同的光斑半径下圆柱光抽运时晶体的端面温度最高,平顶光次之,高斯光最小的重要结论, 说明抽运光的分布严重影响晶体端面的温度场.最后讨论了端面温度场引起的热效应对DPL光束质量的影响,发现端面热效应引起端面热透镜等效曲率半径减小,从而引起束腰半径的减小. 热效应引起热透镜等效曲率 关键词： 圆柱光 平顶光 端面抽运 温度场     

Possible excitation of a fast sodium beam by laser irradiation

We present results of model calculations concerning the fraction of excited atoms obtained by laser irradiation of a fast sodium atom beam (100–400 eV kinetic energy). We calculated relative absorption probabilities as a function of the intersection angle between the two beams, the atom-beam energy, the atom-beam energy spread and the atom-beam divergence. The fraction of excited atoms that can be obtained at 300 eV is at least a factor of 5 smaller than in the case of a thermal beam, due to the divergence and energy spread of the fast atom beam giving rise to a large Doppler broadening.     

温度对金属纳米线势能分布的影响

采用三维分子动力学模拟方法,以面心立方金属银为研究对象,基于Finnis-Sinclair型嵌入原子法(EAM)多体势,模拟研究了纳米线势能分布特征在常温下及其在不同温度直到熔化过程中的变化,给出了常温及不同温度银纳米线势能分布比例和势能分布函数.结果表明:常温下,纳米线高势能原子比例随纳米线横截面尺寸的减小而增大,势能分布函数曲线各峰位几乎与纳米线横截面尺寸无关;纳米线熔化前的势能分布函数曲线具有多个波峰,随着温度增加,峰数减少且峰位右移;熔化后,多峰特征消失,只有一个宽化的峰.     

Electron excitation by a multi passage laser beam in a plasma

The limits put by optical guiding, and channel guiding mechanisms on the Laser Wakefield Acceleration (LWFA) technique are imposed on the Resonant Laser Wakefield Acceleration (RLWFA) scheme. Energy gained by the electrons in both schemes are calculated and compared. It has presented that in the RLWFA case, the electrons gain more and more energy after each traversal of the laser pulse and the electrons in a plasma gain about 3 GeV after 10 passages of the laser pulse. They gain 13 GeV when the laser light makes 50 passages and 26 GeV after the laser beam traverses the plasma 100 times. Moreover, the channel guiding mechanism is integrated to the RLWFA scheme and together with diffraction guiding a model for electron acceleration is proposed. Received 13 September 2000 and Received in final form 27 October 2000     

Effect of rippled laser beam on excitation of ion acoustic wave

Growth of a radially symmetrical ripple, superimposed on a Gaussian laser beam in collisional unmagnetised plasma is investigated. From numerical computation, it is observed that self-focusing of main beam as well as ripple determine the growth dynamics of ripple with the distance of propagation. The effect of growing ripple on excitation of ion acoustic wave (IAW) has also been studied.     

激光辐照下旋转柱壳温度场的数值模拟

 采用有限元方法数值模拟在连续激光辐照下旋转柱壳温度场的变化和分布情况,并分析了热性能参数对温度场造成的影响,同时还比较分析了不同旋转频率对柱壳温度场分布的影响。结果表明,激光作用下旋转柱壳的温升大大低于静止柱壳的温升, 外表面温度呈现出与旋转频率相符的周期性上升过程,而内表面温升由于热传导的原因在较小频率下才表现出这种周期性,当频率增大到一定值时,内表面温升不出现周期性的台阶而是曲线上升。     

激光辐照下旋转柱壳温度场的数值模拟

采用有限元方法数值模拟在连续激光辐照下旋转柱壳温度场的变化和分布情况,并分析了热性能参数对温度场造成的影响,同时还比较分析了不同旋转频率对柱壳温度场分布的影响。结果表明,激光作用下旋转柱壳的温升大大低于静止柱壳的温升, 外表面温度呈现出与旋转频率相符的周期性上升过程,而内表面温升由于热传导的原因在较小频率下才表现出这种周期性,当频率增大到一定值时,内表面温升不出现周期性的台阶而是曲线上升。     

Electron beam excitation studies of potential dye vapor phase laser systems

Excitation processes of selected dye vapor-rare gas mixtures pumped by an electron beam have been studied. These experiments revealed the importance of effective collisional electron energy transfer pumping via a dense rare gas rather than a radiative energy transfer from an excimer laser gas mixture to achieve population inversion in an organic dye vapor. Work supported in part by the Energy Research and Development Adinistration, the Robert A. Welch Foundation and the National Science Foundation.     

Temporal growth of a parametric excitation by a self-focused laser beam

The effect of self-focusing of the pump laser beam on the temporal growth of a parametric excitation has been investigated in the paraxial region. The two equations for the signal and idler modes have been decoupled by assuming the near self-trapping condition and a linearly varying phase mismatch. By employing the WKBJ approximation, it is found that the growth rate is a strong function of the radial intensity inhomogeneity of the pump laser beam. The condition for validity of the first-order approximate theory employed here has been derived.     

Time-resolved transmission of GaAs under intense laser excitation

Time-resolved transmission and reflectivity of bulk GaAs and GaAs on sapphire have been studied at λ = 1152 and 633 nm following excitation by an ≈8 ns pulse at 485 nm. As in the case of silicon, the spectral dependence of the transient absorption coefficient, from 1.1 eV to 2.5 eV, is inconsistent with the existence of a metallic molten state during pulsed laser annealing.