尺寸效应对Er3+掺杂纳米Y2O3的发光特性的影响

采用燃烧法制备了不同尺寸的Er³⁺掺杂Y₂O₃粉体材料,研究了尺寸效应对Er³⁺掺杂纳米Y₂O₃材料发光特性的影响.光声光谱显示,对于不同晶粒尺寸的样品,Er³⁺离子光声峰位置几乎保持不变.这表明小尺寸效应对稀土离子能级位置影响很小.对488nm激光激发下的发射谱的分析发现,随着样品颗粒尺寸的减小,4S_3/2能级和关键词： 3+离子')" href="#">Er³⁺离子 纳米 发光 能量传递     

Yb3+和Er3+共掺杂的Y2O3,Y2O2S和NaYS2粉末材料的上转换发光

在980 nm LED激光器激发下,研究了Yb3+-Er3+共掺杂的Y2O3,Y2O2S和NaYS2粉末材料的上转换发射特性。比较了Y2O3∶0.20 Yb3+,0.03Er3+和Y2O2S∶0.20 Yb3+,0.03Er3+以及NaYS2:0.20 Yb3+,0.03Er3+粉末样品的上转换发光光谱,探讨了Er3+上转换发射对基质的依赖性,分析了S2--Yb3+和S2--Er3+电荷转移态对Yb3+-Er3+间能量传递和能级间跃迁几率的影响,借助于能级图解释了在不同基质中Yb3+-Er3+间的能量传递和Er3+的上转换发光机制。     

上转换纳米粒子CaF2∶E3+,Yb3+的合成及其温敏特性

采用水热合成法制备了CaF2∶Yb3+,Er3+上转换纳米粒子.在980 nm激发下,研究了来源于Er3+的2H11/2/4S3/2→4I15/2跃迁的绿光发射和来源于4F9/2→4I15/2跃迁的红光发射.由于Er3+具有一对热耦合能级(2H11/2/4S3/2),所合成的样品在293～573 K温度范围内有良好的温敏特性.利用荧光强度比(FIR)技术,测得样品在483 K时具有最大灵敏度0.002 85 K-1.     

SiO2包覆Y2O3:Er3+纳米粉的制备及发光性能

用微乳液法合成出SiO2包覆的Er3+掺杂的Y2O3粉体.X射线衍射结果表明,所制备粉体为立方Y2O3结构.透射电镜照片显示,其颗粒形状近似为球形,粒径为20～50 nm.该粉体在波长为980 nm的半导体激光器激发下发射出中心波长为562 nm的绿色和660 nm的红色上转换荧光,分别对应于Er3+离子的4S3/2/2H11/2→4I15/2跃迁和4F9/2→4I15/2跃迁,发光强度和激发功率的关系揭示其均为双光子过程.Er3+掺杂的Y2O3粉体具有高效的上转换发光性能,而经过纳米复合后制成的Y2O3(核)/SiO2(壳)在水溶液中具有较好的悬浮性,这对于其在生物荧光标记的应用具有重要意义.     

BaMgF_4:Er~(3+),Yb~(3+)上转换纳米晶的合成及其发光性能研究

采用反向共沉淀法制备了形貌呈棒状的BaMgF4:Er3+,Yb3+上转换纳米晶.样品在980 nm半导体激光器激发下发射绿色和红色上转换荧光,其发射的绿、红发射带归因于Er3+离子的2H11/2—4I15/2,4S3/2—4I15/2和4F9/2—4I15/2跃迁.当Er3+的掺杂浓度为3%,Yb3+离子掺杂浓度为10%时,荧光粉的上转换发光强度最强;随着Yb3+离子浓度的增加样品的红光发射增强,绿光发射减弱.通过上转换发光强度与抽运电流关系曲线的拟合,得出BaMgF4:Er3+,Yb3+上转换材料的绿光与红光的上转换过程均为双光子吸收过程.     

Er3+/Yb3+共掺杂纯氧化物材料上转换发光特性的研究

对实验制备的Er3 /Yb3 共掺杂3CaO-Al2O3-3SiO2样品在980激发下的上转换发光特性进行了研究, 检测到由处于激发态能级2H11/2, 4S3/2和4F9/2的Er3 离子分别向基态4I15/2跃迁时发出的波长依次为523, 547和656 nm的上转换发光. 做出了上转换发光强度与激发功率关系的曲线图, 并结合测得的声子能量对相应跃迁机制进行了分析, 发现上转换过程中Yb3 对的敏化作用起主要作用.     

组合优化设计制备Y~(3+)/Dy~(3+)共掺Bi_2ZnB_2O_7新型荧光粉的发光性质

为获得Bi2ZnB2O7:Y3+/Dy3+新型荧光粉材料的最强黄光发光强度,运用均匀设计和二次通用旋转组合设计相结合法对Y3+/Dy3+最佳离子掺杂浓度进行优化研究,得到Y3+和Dy3+离子的最佳掺杂浓度分别为4.498mol%和6.001mol%.采用高温固相法合成最优样品,对样品结构进行表征,测定其激发光谱和发射光谱对Dy3+离子在Bi2ZnB2O7基质中的发光性质,研究发现:样品在452nm激发下,发射光谱主要由(460~500nm)蓝光发射、(550~610nm)黄光发射、(650~700nm)红光发射组成,分别对应于Dy3+的4F9/2→6H15/2、4F9/2→6H13/2及4F9/2→6H11/2跃迁;Bi2ZnB2O7基质为Dy3+提供了非中心对称的晶格格位;最优样品中Dy3+的荧光寿命为0.427ms,与相同浓度Dy3+单掺杂样品相比较可知引入Y3+在一定程度上提高了发光强度.     

组合优化设计制备Y^(3+)/Dy^(3+)共掺Bi_2ZnB_2O_7新型荧光粉的发光性质EI北大核心CSCD

为获得Bi2ZnB2O7:Y3+/Dy3+新型荧光粉材料的最强黄光发光强度,运用均匀设计和二次通用旋转组合设计相结合法对Y3+/Dy3+最佳离子掺杂浓度进行优化研究,得到Y3+和Dy3+离子的最佳掺杂浓度分别为4.498mol%和6.001mol%.采用高温固相法合成最优样品,对样品结构进行表征,测定其激发光谱和发射光谱对Dy3+离子在Bi2ZnB2O7基质中的发光性质,研究发现:样品在452nm激发下,发射光谱主要由(460~500nm)蓝光发射、(550~610nm)黄光发射、(650~700nm)红光发射组成,分别对应于Dy3+的4F9/2→6H15/2、4F9/2→6H13/2及4F9/2→6H11/2跃迁;Bi2ZnB2O7基质为Dy3+提供了非中心对称的晶格格位;最优样品中Dy3+的荧光寿命为0.427ms,与相同浓度Dy3+单掺杂样品相比较可知引入Y3+在一定程度上提高了发光强度.     

SiO2包覆Y2O3:Er3+纳米粉的制备及发光性能

用微乳液法合成出SiO2包覆的Er3+掺杂的Y2O3粉体.X射线衍射结果表明,所制备粉体为立方Y2O3结构.透射电镜照片显示,其颗粒形状近似为球形,粒径为20～50 nm.该粉体在波长为980 nm的半导体激光器激发下发射出中心波长为562 nm的绿色和660 nm的红色上转换荧光,分别对应于Er3+离子的4S3/2/...     

Na+离子掺杂Gd2O3:Sm3+纳米晶的发光增强

采用柠檬酸作燃烧剂,在柠檬酸-硝酸盐体系下制备了Gd2O3:Sm3+和Gd2O3:Sm3+,Na+纳米晶.用X射线衍射仪、透射电子显微镜、荧光光谱仪等对样品的结构、形貌和光致发光性能进行了分析.结果表明:所得纳米样品为纯立方相,晶粒尺寸约为30 nm.在室温下,用275 nm激发光激发各样品时,可观测到Sm3+离子的较强发光,其主发射峰位分别位于561.5,603.5,651.5 nm,分别对应着Sm3+离子的4G5/2→6H5/2,4G5/2→6H7/2和7G5/2→6H9/2的电子跃迁,其中以4G5/2→6H7/2跃迁的光谱强度最强.实验表明:Na+离子的掺入使得Sm3+离子的光发射强度显著增强.对引起样品荧光强度变化的原因进行了分析.     

Temperature dependent polariton measurements in BaTiO3

Polariton techniques are used to determine the temperature dependence of all three A₁ modes between room temperature and T_c = 134°C in the ferroelectric phase of BaTiO₃. The results shows that there is a large difference between the clamped dielectric constant, ?(0), determined from these results and ?(0) determined from microwave capacitance techniques. It is argued that, while soft modes in displacive ferroelectrics are the driving force for the transition, other oscillators play an important role in low frequency dielectric behavior.     

Magnetic-field dependent phonon states in paramagnetic CeF3

Raman scattering experiments in paramagnetic uniaxial CeF₃ at helium temperature demonstrate a splitting of some degenerate (E_g)-phonon states in an external magnetic field parallel to the crystal axis. A linear splitting is observed in low fields, followed by a field independent (saturation) splitting in high fields. In addition, changes in the Raman scattering efficiencies and a reduction of the line width of phonon transitions are observed with increasing magnetic fields. No such effects are observed for magnetic fields perpendicular to the crystal axis. The splittings of degenerate phonon modes are related to the paramagnetic saturation 〈S_z〉.     

Angle dependent frequency shift in antiferromagnetic solid3He

The tipping angle dependent frequency shift antiferromagnetic solid ³He is calculated. It is shown that for some tipping angles this shift could be positive as well as negative and depends on the direction of the external magnetic field.     

Thickness dependent magnetic and ferroelectric properties of LaNiO3 buffered BiFeO3 thin films

BiFeO₃ (BFO) thin films with thickness increasing from 40 to 480 nm were successfully grown on LaNiO₃ (LNO) buffered Pt/Ti/SiO₂/Si(100) substrate and the effects of thickness evolution on magnetic and ferroelectric properties are investigated. The LNO buffer layer promotes the growth and crystallization of BFO thin films. Highly (100) orientation is induced for all BFO films regardless of the film thickness together with the dense microstructure. All BFO films exhibited weak ferromagnetic response at room temperature and saturation magnetization is found to decrease with increase in film thickness. Well saturated ferroelectric hysteresis loops were obtained for thicker films; however, the leakage current dominated the ferroelectric properties in thinner films. The leakage current density decreased by three orders of magnitude for 335 nm film compared to 40 nm film, giving rise to enhanced ferroelectric properties for thicker films. The mechanisms for the evolution of ferromagnetic and ferroelectric characteristics are discussed.     

Temperature‐dependent Raman study of PrFeO3thin film

Low‐temperature Raman study of (001)‐oriented PrFeO₃ thin film of around 200 nm thickness deposited on a LaAlO₃ (001) substrate by using the pulsed‐laser deposition technique is presented. X‐ray diffraction analysis of this film shows an orthorhombic structure with Pbnm space group. The observed substrate‐induced strain is found to be small. In the room temperature Raman spectra, different Raman modes were observed that were classified according to the orthorhombic structure. All the observed modes show a decrease in wavenumber with rise in temperature, except the B_1g mode (624 cm⁻¹) which shows some anomalous behavior. We tried to correlate the variations in linewidth and position with temperature for the observed modes with the octahedral disorder of FeO₆. Many possibilities are presented to explain the observed results. Copyright © 2010 John Wiley & Sons, Ltd.     

Temperature‐dependent Raman spectroscopy study in MoO3 nanoribbons

This paper reports a study of vibrational, structural and morphological properties of molybdenum oxide nanoribbons. Temperature‐dependent Raman spectroscopy measurements in MoO₃ nanoribbons revealed morphological changes in the 150–350 °C temperature range. No structural phase transitions were observed, thus showing that the orthorhombic phase is stable from room temperature (nanoribbons) up to 650 °C (bulk‐like phase) where large plates have been formed by the coalescence of the nanoribbons. The interpretation of temperature‐dependent Raman data (wavenumber and linewidths) is supported by scanning electron microscopy that is used to directly probe the morphological changes in MoO₃ samples. The observed phenomena in the Raman data for MoO₃ nanoribbons can be applied to other nanomaterials. Copyright © 2012 John Wiley & Sons, Ltd.     

Polarization dependent chemistry of ferroelectric BaTiO3(001) domains

Recent works suggest that the surface chemistry, in particular the presence of oxygen vacancies, can affect the polarization in a ferroelectric material. This should, in turn, influence the domain ordering driven by the need to screen the depolarizing field. Here we show using density-functional theory that the presence of oxygen vacancies at the surface of BaTiO(3)(001) preferentially stabilizes an inward pointing, P-, polarization. Mirror electron microscopy measurements of the domain ordering confirm the theoretical results.     

Electric field dependent dielectric function in NbSe3

Dielectric function of quasi-one-dimensional conductor NbSe₃ has been measued in the vicinity of Peierls transition near T_p=145K by use of novel technique. The low frequency noise in V/I/ characteristics is attributed to the Gaussian type of position fluctuations of pinned charge density wave (CDW) and fundamental frequency of the noise is found to be identical with spring frequency of restoring forces.     

Temperature dependent of thermal expansion and ferroelectric properties for BiAlO3-modified BaTiO3 lead-free ceramics

Perovskite structure (1 − x)BaTiO₃–xBiAlO₃ (BT–xBA, x = 0.05, 0.08 and 0.1, corresponding to BT–5BA, BT–8BA and BT–10BA, respectively) ceramics were prepared by a solid state reaction route. Crystal structure of BT–xBA ceramics was determined by using XRD. Dielectric properties were studied as a function of temperature at different frequencies, which indicated that the phase transition temperature (T_m) decreased with increasing x. With increasing temperature, thermal expansion dl/l increased while thermal expansion coefficient α had weak concentration dependence. The Burns temperature was much higher than the transition temperature T_m for the BT–5BA and BT–10BA ceramics. Polarization hysteresis loops (P–E), electrostrictive (S–E) and S versus P² (S–P²) at different temperatures were displayed. P_max slightly decreased due to thermally activated leakage current, meanwhile, S_max decreased at above T_m with the contribution of ferroelectric domain reorientation decreased. The electrostrictive coefficient Q value was clearly larger than that of lead-based electrostrictors at room temperature. Furthermore, it exhibited a slim loop with negligible hysteresis and a subtle linear feature at higher temperature.