Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells

The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al_(0.3)Ga_(0.7)As quantum weiis is studied using the time-resolved magneto-Kerr rotation measurements.The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density.Moreover,the relative strength of the Rashba and the Dresselhaus spin-orbit coupling fields,and thus the observed spin relaxation time anisotropy,is further tuned by the additional excitation of a 532 nm continuous wave laser,demonstrating an effective spin relaxation manipulation via an optical gating method.     

Two-dimensional electron-hole pair diffusivities in thin GaAs/AlGaAs Quantum Wells

Diffusivities of two-dimensional electron-hole pairs in thin GaAs/AlGaAs Quantum Wells (QWs) are studied experimentally and theoretically as functions of temperature and well-width. With growing well-widths, increasing diffusivities are observed for fixed Al-contents. Experimental diffusivities for the lateral carrier motion in continuously as well as in interrupted-grown thin QWs of different barrier Al-content are presented for T>150 K. Increasing diffusivities are observed for rising temperatures in the range T190 K. A comparison of the experimental data and results of theoretical model calculations indicates that the increase is partly related to thermal dissociation of excitons into free carrier pairs. The effective diffusivity of this two-component system is calculated using a system of rate equations and considering acoustic-deformation-potential scattering, polar-optical scattering and barrier-alloy-disorder scattering.The experimental data were obtained at: 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, W-7000 Stuttgart 80, Germany     

基于GaAs-AlGaAs非对称耦合量子阱材料的半导体弱光开关

提出了一种基于在GaAs-AlGaAs非对称耦合量子阱材料子带跃迁的量子干涉的半导体弱光开关，分析了驰豫速率γ21对光开关的影响，这种半导体弱光开关是半导体超晶格材料共振隧穿作用导致的子带跃迁的Fano干涉的结果，由于半导体结构与材料可以人为地选择，相干强度可以控制和改变，这种半导体弱光开关比采用原子系统更实用，这也是一种在半导体材料中实现一束光控制另一束光的方法。     

Piezoelectric Relaxation of Two-Dimensional Electron Gas in Heterostructures with InGaN/GaN Quantum Wells

Russian Physics Journal - The article is devoted to the study of the mechanism of piezoelectric scattering of charge carriers in InGaN/AlGaN/GaN heterostructures with one filled size quantization...     

Quantum cascade electroluminescence in GaAs/AlGaAs structures

The operation of a unipolar quantum cascade light-emitting diode based on the material system GaAs/AlGaAs is reported. The LED operates at a wavelength of 6.9 μm. Detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm² the optical output power lies in the ten 10 nW range. Additional absorption and photocurrent measurements provide a complete characterization of the mid-infrared emitter.     

Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.     

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1 μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60μm respectively, a peak output power more than 500mW is achieved in pulsed mode operation. A low threshold current density Jth = 2.6 kA/cm^2 gives the devices good lasing characteristics. In a drive frequency of i kHz, the laser operates up to 20% duty cycle.     

Spin Splitting in Different Semiconductor Quantum Wells

We theoretically investigate the spin splitting in four undoped asymmetric quantum wells in the absence of external electric field and magnetic field. The quantum well geometry dependence of spin splitting is studied with the Rashba and the Dresselhaus spin-orbit coupling included. The results show that the structure of quantum well plays an important role in spin splitting. The Rashba and the Dresselhaus spin splitting in four asymmetric quantum wells are quite different. The origin of the distinction is discussed in this work.     

Anisotropic Spin Splitting in Step Quantum Wells

By the method of finite difference, the anisotropic spin splitting of the AlxGa1-xAs/GaAs/Aly Ga1-yAs/AlxGal-xAs step quantum wells （QWs） are theoretically investigated considering the interplay of the bulk inversion asymmetry and structure inversion asymmetry induced by step quantum well structure and external electric field. We demonstrate that the anisotropy of the total spin splitting can be controlled by the shape of the QWs and the external electric field. The interface related Rashba effect plays an important effect on the anisotropic spin splitting by influencing the magnitude of the spin splitting and the direction of electron spin. The Rashba spin splitting presents in the step quantum wells due to the interface related Rashba effect even without external electric field or magnetic field.     

量子自旋液体候选材料的缪子自旋弛豫研究

量子自旋液体是一种新奇的磁性物态。由于极强的量子涨落,直至零温都不会出现长程序。量子自旋液体的基态不能用序参量描述,并且缺少对称性破缺,因此该物态的实现打破朗道理论的范式。对于量子自旋液体的研究有助于理解高温超导的机理,并且可以被应用在量子计算和量子信息中。目前,尽管理论上有了长足的发展,但仍旧没有任何一个材料被证实为量子自旋液体。因此,探测和确认一个真正的量子自旋液体材料是当前的研究重点。缪子自旋弛豫是一个对磁场极为敏感的实验技术,被广泛应用于量子自旋液体候选材料的研究中。该技术可以观测基态中是否存在磁有序,测量系统中的涨落频率,这两点都是表征量子自旋液体的重要性质。本文简要介绍了量子自旋液体态和缪子自旋弛豫技术,回顾了近期在不同体系的量子自旋液体候选材料中的实验结果,特别是缪子自旋弛豫的成果。这些体系包括一维反铁磁海森堡链（苯甲酸铜）,三角格子（YbMgGaO4,NaYbO2 和TbInO3）,笼目格[ZnCu3(OH)6Cl2 和 m3Sb3Zn2O14],蜂窝状格子（Na2IrO3 和 α-RuCl3）,以及烧绿石结构（Tb2Ti2O7,Pr2Ir2O7 和Ce2Zr2O7）。     

Two-Dimensional GaAs/AlGaAs Multiple Quantum Well Spatial Light Modulators

Multiple quantum well spatial light modulators with 128x128 array in 38μm pitch are fabricated using two pproaches, one with an attachment of an optical substrate and another one without. These two fabrication processes are described and compared.     

GaNAs/GaAs量子阱的激子局域化以及退局域化

我们利用光荧光(PL)以及时间分辨光谱(TRPL)研究了用MBE生长在GaAs衬底上的GaNAs/GaAs量子阱的激子局域化以及退局域化。研究发现,在低温下用连续光(CW)激发,由于GaNAs中势振荡所产生的局域激子发光是所测量到光谱的主要发光来源。然而在脉冲激发下,情况完全不同。在高载流子密度激发或者高温下GaNAs/GaAs量子阱中例外,一个高能端的PL峰成为了主要的发光来源。通过研究,我们将这个新的发光峰指认为量子阱中非局域激子复合的PL峰。这个发光峰在温度和激发强度的变化过程中与局域激子相互竞争。我们相信这一过程也是许多文献所报道的在InGaN和AlGaN等氮化物中经常观测到的发光峰位随温度“S”形变化的主要根源。     

GaNAs/GaAs量子阱的激子局域化以及退局域化

我们利用光荧光(PL)以及时间分辨光谱(TRPL)研究了用MBE生长在GaAs衬底上的GaNAs/GaAs量子阱的激子局域化以及退局域化.研究发现,在低温下用连续光(Cw)激发,由于GaNAs中势振荡所产生的局域激子发光是所测量到光谱的主要发光来源.然而在脉冲激发下,情况完全不同.在高载流子密度激发或者高温下GaNAs/GaAs量子阱中例外,一个高能端的PL峰成为了主要的发光来源.通过研究,我们将这个新的发光峰指认为量子阱中非局域激子复合的PL峰.这个发光峰在温度和激发强度的变化过程中与局域激子相互竞争.我们相信这一过程也是许多文献所报道的在InGaN和AlGaN等氮化物中经常观测到的发光峰位随温度"S"形变化的主要根源.     

InGaAs/GaAs应变量子阱的光谱研究

分别用光致发光谱（PL），光伏谱（PV）及时间分辨谱（TRPL）的方法，测量了应变InGaAs/GaAs单量子阱和多量子阱在不同温度下的光谱，发现单量子阱与多量子阱有不同的光学4性质。多量子阱PL谱发光峰和PV谱激子峰的强度与半高宽都比单量子阱的大，但单量子阱的半高宽随着温度的升高增大很快，这是由激子－声子耦合引起的，通过时间分辨谱研究发现了量子阱子能级之间的跃迁，多量子阱的发光寿命明显比单量子阱的长，我们利用形变势模型对量子阱的能带进行了计算，很好地解释了实验结果。     

Electron spin filtering in the GaAs/AlGaAs interface space charge field

The circularly polarized recombination radiation produced by optically oriented electrons in GaAs and viewed in the direction of and opposite to the pump light propagation was found to have opposite signs of polarization. The excitation was effected by photons of energy E_hv ≈ E _g + Δ through a transparent AlGaAs window. The opposite signs of circular polarization and its complex dependence on the luminescence wavelength are accounted for by the influence of the space charge field created by the depleted layer near the interface.     

Spin excitations in few-electrons AlGaAs/GaAs quantum dots probed by inelastic light scattering

We present recent studies of electronic excitations in nanofabricated AlGaAs/GaAs semiconductor quantum dots (QDs) by resonant inelastic light scattering. The resonant light scattering spectra are dominated by excitations from parity-allowed inter-shell transitions between Fock–Darwin levels. In QDs with very few electrons the resonant spectra are characterized by distinct charge and spin excitations that reveal the strong impact of both exchange and correlation effects. A sharp inter-shell spin excitation of the triplet spin QD state with four electrons is identified.