High-power resonantly diode-pumped CW Er<Superscript>3+</Superscript>:YAG laser

Using high-spatial and -spectral brightness laser diodes, a resonantly pumped high-power continuous-wave (CW) Er³⁺:YAG laser with up to 9 W of output power could be realized. Due to the lower upconversion loss in the 0.5% Er³⁺-doped crystal, intrinsic efficiencies of up to 64.3% and an optimum outcoupling of ∼20% were found. The output power was compared to quasi-three-level theory with good agreement. In an optimized cavity design a mode fill efficiency of ∼95% was achieved.     

Single diode-pumped, 1.7 ns microchip laser by Nd:YAG/Cr<Superscript>4+</Superscript>:YAG composite crystal

A single diode-pumped passively Q-switched composite Nd:YAG/Cr⁴⁺:YAG laser, which cavity mirrors were deposited directly onto the crystal, was demonstrated in this paper. At the incident power of 2.75 W, the maximum average output power of 365 mW and the shortest pulse width of 1.7 ns were obtained, corresponding the repetition rate of 14.6 kHz. The single-pulse energy and the peak power were estimated to be 25 μJ and 14 kW, respectively. The corresponding optical-optical conversion efficiency was 13.3%.     

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semiinsulating GaAs wafer. The wafer was implanted with 400-kev As+ in the concentration of 1016 ions/cm2.To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 ℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films,respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.     

Nonlinear transmittance of ZnSe:Fe<Superscript>2+</Superscript> crystal at a wavelength of 2.92 μm

ZnSe crystals doped with Fe²⁺ ions are produced with the diffusion method under the conditions for thermodynamic equilibrium of solid ZnSe, solid Fe, and vapors (S_ZnSe-S_Fe-V). The transmittance of the samples is varied from 7 to 50% (in the absence of the antireflection coating) for a wavelength of about 3 μm. It is demonstrated that the transmittance of the ZnSe:Fe²⁺ crystals increases with an increase in the energy density of the high-power laser radiation with a wavelength of 2.92 μm. An equation that describes the propagation of the resonant radiation in a medium with saturable absorption at an arbitrary ratio of the radiation pulse duration to the relaxation time of the medium is introduced for the analysis of the experimental dependence of the transmittance on the energy density.     

Quasi-three level laser based on diode-pumped Nd<Superscript>3+</Superscript>:YAlO<Subscript>3</Subscript> crystal

We describe the output performances of the 930 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd³⁺:YAlO₃ (Nd:YAP) under in-band pumping with diode laser at the 803 nm wavelength. An end-pumped Nd:YAP crystal yielded 1.13 W of continuous-wave (CW) output power for 17.8 W of incident pump power. Moreover, intracavity second-harmonic generation has also been achieved with a power of 172 mW at 465 nm by using a LiB₃O₅ (LBO) nonlinear crystal. The blue beam quality factor M ² was less than 1.3. The blue power stability was less 3% in 60 min.     

Low-temperature relaxation in the ZnSe : V<Superscript>2+</Superscript> crystal

Low-temperature anomalies in absorption of the fast transverse and longitudinal ultrasonic waves are revealed in a ZnSe crystal lightly doped (5.6 × 10¹⁸ cm^?3) with V²⁺ ions. These anomalies are interpreted as a manifestation of the Jahn-Teller effect. The temperature dependence of the relaxation time of the impurity 3d electrons is established.     

Passive Q-switching performance with Co:LMA crystal in a diode-pumped Nd:LuVO<Subscript>4</Subscript> laser

A diode-pumped passively Q-switched Nd:LuVO₄ 1.34 μm laser using Co:LMA saturable absorber was successfully demonstrated. The average output power, pulse width, repetition rate of a-cut and c-cut Nd:LuVO₄ lasers were studied with different output couplers. The maximum average output power of 164 mW was obtained at the pump power of 10.3 W and the narrowest pulse width of 168 ns was achieved at repetition rate of 457 kHz under pump power of 8.59 W in a-cut Nd:LuVO₄ laser with T = 8%.     

Passive Q-switching of a laser-diode-pumped intracavity-frequency-doubling Nd:Nd<Superscript>3+</Superscript>:NaY(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>/KTP laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber

Nd³⁺:NaY(WO₄)₂, known as Nd:NYW, is a new type crystal. By using laser-diode as pump source, a passive Q-switching of intracavity-frequency-doubling Nd:NYW/KTP laser has been realized with Cr⁴⁺:YAG saturable absorber. The dependence of pulse repetition rate, pulse energy, pulse width, and peak power on incident pump power for different small-signal transmissions of Cr⁴⁺:YAG are measured. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.     

A ceramic based Yb<Superscript>3+</Superscript>:YAG laser

We report the performance of a laser based on a 9.8% doped ceramic Yb³⁺:YAG operating in quasi-Continuous Wave (QCW) and in Continuous Wave (CW) at room temperature. The maximum output power of 9 W with a slope efficiency of 73% at 1030 nm was achieved in QCW. We investigated the problems originated from thermo-mechanical properties of the ceramic and we studied their effects on the laser per-formance finding that either the slope efficiency or the laser threshold are thermal-losses independent. Finally, we report a characterization of a low losses tunable cavity for several laser wavelengths.     

High repetition rate passive Q-switching of diode-pumped Nd:GdVO<Subscript>4</Subscript> laser at 912 nm with V<Superscript>3+</Superscript>:YAG as the saturable absorber

The character of a diode-pumped passively Q-switched Nd:GdVO₄/V³⁺:YAG 912 nm laser was demonstrated for the first time to our knowledge. With an absorbed pump power of 7.4 W, an average output power of 360 mW with a Q-switched pulse width of 328 ns at a pulse repetition rate of 163 kHz was obtained. The Q-switching efficiency was found to be 32.7%. Our work further indicated V³⁺:YAG could be an effective fast passive Q-switch for 0.9 μm radiation.     

Adiabatic elastic moduli in ZnSe : Mn<Superscript>2+</Superscript> and ZnSe : V<Superscript>2+</Superscript> crystals

The temperature dependences of the elastic moduli C ₄₄ (C ₁₁ ? C ₁₂)/2 and C _l = (C ₁₁ + C ₁₂ + 2C ₄₄)/2 of ZnSe : V²⁺ (impurity concentration, 6 × 10¹⁸ cm^?3) and ZnSe : Mn²⁺ (9.4 × 10²⁰ cm^?3) are measured in the temperature range 1.4–100.0 K at frequencies of 52 and 156 MHz. The temperature dependences of the adiabatic elastic moduli are derived. It is established that softening of the symmetry modules is observed only in the crystal with an impurity having orbitally degenerate states.     

Spectral kinetic properties and lasing characteristics of diode-pumped Cr<Superscript>2+</Superscript>:ZnSe single crystals

The temperature and concentration quenching of the luminescence of Cr²⁺ ions in Cr:ZnSe crystals is experimentally investigated and the radiative lifetime of the upper lasing level is determined. The values of the cross sections of absorption from the ground state of Cr²⁺ ions in Cr:ZnSe crystals are refined. It is shown that the absorption from the excited state of Cr²⁺ ions is negligible near 1.5 μm. Lasing in Cr:ZnSe single crystals is implemented with an efficiency of 31% and an output power of 186 mW using laser diode pumping at a wavelength of 1.77 μm.     

Pulse compression in diode-pumped doubly Q-switched Nd:GdVO<Subscript>4</Subscript> laser with both V<Superscript>3+</Superscript>:YAG and Co<Superscript>2+</Superscript>:LMA saturable absorber

By simultaneously using both a V³⁺:YAG and a Co²⁺:LaMgAl₁₁O₁₉ saturable absorber in the cavity, for the first time to our knowledge, a diode-pumped doubly Q-switched Nd:GdVO₄ laser has been realized. The dependence of pulse width, pulse repetition rate, pulse energy and peak power on the incident pump power are measured. Under the absorbed pump power of 8.59 W, both the pulse temporal profile of the passive double-switching with the pulse width of 25.29 ns, and the passive single-switching just using V³⁺:YAG with pulse width of 30.46 ns are obtained. The pulse duration is partly compressed in contrast to the purely passively Q-switched laser with V³⁺:YAG.     

Absorption saturation properties and laser Q-switch performance of Cr<Superscript>5+</Superscript>-doped YVO<Subscript>4</Subscript> crystal

The ground-state and excited-state absorption cross sections of a Cr⁵⁺:YVO₄ single crystal were determined by the intensity-dependant transmission measurements to be(2.0±0.4)×10^-18 cm² and less than 0.1×10^-18 cm² at 1.08 μm, respectively. The bleaching relaxation time of the Cr⁵⁺:YVO₄ crystal was estimated to be 3.5±1.5 ns. Passive Q-switching of a diode-pumped Yb³⁺:YVO₄ laser with the Cr⁵⁺:YVO₄ saturable absorber was realized. PACS 42.55.Xi; 42.60.Gd; 42.70.Hj     

Creation and experimental study of a planar solid-state laser based on a YAG:Yb<Superscript>3+</Superscript> crystal with diode edge pumping

The results from calculations and preliminary experimental investigations of a solid-state laser manufactured in the form of a plate 15 × 10 × 0.3 mm in size and made of YAG:Yb³⁺ crystal with two-side diode edge pumping with a total power of 600 W at a wavelength of 940 nm are presented. Both stable and hybrid stable–unstable resonators are used in the experiment.     

Tunable,narrow linewidth,linearly polarized and gain-switched Cr<Superscript>2+</Superscript>:ZnSe laser

We demonstrate a tunable, narrow linewidth, linearly polarized and gain-switched Cr²⁺:ZnSe laser pumped by a Tm, Ho:YVO₄ laser at 10 kHz pulse repetition frequency. By setting a quartz birefringent filter with a Brewster angle in the cavity, the linearly polarized Cr²⁺:ZnSe laser can be continuously tuned from 2.45 to 2.50 μm, and the output power was almost not changed. In addition, the linewidth was compressed to about 5 nm. At the incident pump power to the crystal of 14 W, the maximum output power of 2.84 W was obtained, corresponding to a slope efficiency of 20.4%.     

Diode-pumped cw tunable two-frequency YAG:Nd<Superscript>3+</Superscript> laser with coupled resonators

Using the mode splitting that can be achieved by exploiting the effect of photoelasticity and the mode selection properties of coupled resonators, single- and two-frequency operation of a diode pumped cw YAG:Nd³⁺ laser was observed. In the two-frequency case, a regime with two orthogonal linearly polarized modes was realized. The frequency difference between the adjacent modes could be varied from 50 MHz to 8.4 GHz. A maximum laser output power of 12 mW was achieved at a pump level of 240 mW . Received: 1 November 2002 / Revised version: 14 January 2003 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +375-17/2840-879, E-mail: ryabtsev@dragon.bas-net.by     

The first-stokes pulse generation in Nd:KGW intracavity driven by a diode-pumped passively Q-switched Nd:YAG/Cr<Superscript>4+</Superscript>:YAG laser

The operation of an all solid-state pulsed Nd:KGW Raman laser pumped by compact passively Q-switched Nd:YAG/Cr:YAG laser is demonstrated. The first-Stokes radiation of stimulated Nd:KGW Raman scattering at the 1178 nm is generated. The average output power of 336 mW at Stokes wavelength was obtained under the laser diode pump power of 5.74 W. The corresponding optical efficiency from the diode light to the Raman output is 9.85%. The pulse width of 1.65 ns and a pulse repetition rate of 10 kHz were also obtained.     

Effect of 10 MeV energy of electron irradiation on Fe<Superscript>2+</Superscript> doped ZnSe nanorods and their modified properties

The Fe²⁺-doped ZnSe nanorods are synthesized using simple potentiostatic mode of electrodeposition on the tin-doped indium oxide (ITO) substrate. To study the effect of electron irradiation, the 10-MeV energy has been applied on 1 % Fe²⁺-doped ZnSe nanorods with different doses such as 10, 20 and 30 kGy. After electron irradiation, structural, morphological, optical, electrochemical and photoelectrochemical properties have been investigated. Due to high energy electron irradiation dose, drastic changes have been observed in the morphological properties; hence, changes have been observed in photoelectrochemical properties also. Due to high-energy, nanorods are destroyed and the photoelectrochemical cell performance (PEC) has been decreased.     

Coumarin Based Fluorescent Probe for Colorimetric Detection of Fe<Superscript>3+</Superscript> and Fluorescence Turn On-Off Response of Zn<Superscript>2+</Superscript> and Cu<Superscript>2+</Superscript>

A new coumarin based Schiff-base chemosensor-(E)-7-(((8-hydroxyquinolin-2-yl)methylene) amino)-4-methyl-2H-chromen-2-one (H ₁₁ L) was synthesized and evaluated as a colorimetric sensor for Fe³⁺ and fluorescence “turn on-off” response of Zn²⁺ and Cu²⁺ using absorption and fluorescence spectroscopy. Upon treatment with Fe³⁺ and Zn²⁺, the absorption intensity as well as the fluorescence emission intensity increases drastically compared to other common alkali, alkaline earth and transition metal ions, with a distinct color change which provide naked eye detection. Formation of 1:1 metal to ligand complex has been evaluated using Benesi-Hildebrand relation, Job’s plot analyses, ¹H NMR titration as well as ESI-Mass spectral analysis. The complex solution of H ₁₁ L with Zn²⁺ ion exhibited reversibility with EDTA and regenerate free ligand for further Zn²⁺ sensing. H ₁₁ L exhibits two INHIBIT logic gates with two different chemical inputs (i) Zn²⁺ (IN1) and Cu²⁺ (IN2) and (ii) Zn²⁺ (IN1) and EDTA (IN2) and the emission as output. Again, an IMPLICATION logic gate is obtained with Cu²⁺ and EDTA as chemical inputs and emission as output mode. Both free ligand as well as metal-complexes was optimized using density functional theory to interpret spectral properties. The corresponding energy difference between HOMO-LUMO energy gap for H ₁₁ L, H₁₁L-Zn²⁺ and H₁₁L-Cu²⁺ are 2.193, 1.834 and 0.172 eV, respectively.