N2流量对GaN的形貌及光学和电学性能的影响

采用化学气相沉积法(CVD)在Si(100)衬底上以Ni为催化剂,金属Ga和NH3为原料合成了GaN微纳米结构,并研究了N2流量对产物GaN的形貌及光学和电学性能的影响。利用场发射扫描电子显微镜(SEM)、透射电镜(TEM)、X射线衍射仪(XRD)、Xray能谱仪(EDS)、光致发光谱(PL)和霍尔效应测试仪(HMS-3000)等测试手段对样品的形貌、结构、成分、光学和电学性能进行了分析。结果表明,随着N2流量的增加,产物GaN的形貌发生了由微米棒到蠕虫状线再到光滑纳米线的转变;生成的GaN均为六方纤锌矿结构;样品均表现出383 nm的近带边紫外发射峰和470 nm左右的蓝光发射峰;所有样品均为p型;并对产物GaN的形貌转变机理进行了分析。     

N2流量对GaN的形貌及光学和电学性能的影响

采用化学气相沉积法(CVD)在Si(100)衬底上以Ni为催化剂, 金属Ga和NH₃为原料合成了GaN微纳米结构, 并研究了N₂流量对产物GaN的形貌及光学和电学性能的影响。利用场发射扫描电子显微镜(SEM)、透射电镜(TEM)、X射线衍射仪(XRD)、X-ray能谱仪(EDS)、光致发光谱(PL)和霍尔效应测试仪(HMS-3000)等测试手段对样品的形貌、结构、成分、光学和电学性能进行了分析。结果表明, 随着N₂流量的增加, 产物GaN的形貌发生了由微米棒到蠕虫状线再到光滑纳米线的转变;生成的GaN均为六方纤锌矿结构;样品均表现出383 nm的近带边紫外发射峰和470 nm左右的蓝光发射峰;所有样品均为n型;并对产物GaN的形貌转变机理进行了分析。     

GaN纳米带、纳米环和Z字结构纳米线在金属镓颗粒上的原位生长及其发光性质

在1050℃氨气和氢气混合气氛中加热金属镓,在镓颗粒表面原位生长出了GaN纳米带、纳米环和Z字结构纳米线．利用激光拉曼光谱仪、扫描电子显微镜和透射电子显微镜对产物进行了表征,结果表明,所得不同形貌GaN纳米结构均为单晶六方纤锌矿结构,纳米带宽度在20～300nm,长达30gm;纳米环直径在5-8gm;Z字结构纳米线的直径约为160nm．研究了反应温度和时间对产物形貌和结构的影响,提出了不同形貌GaN纳米结构的可能形成机理．从GaN纳米结构的发光光谱中观察到了发光峰位于361nm强的紫外光发光和456nm弱的蓝光发光,这两种发光分别起源于GaN宽带隙带边的激子发射和浅的给体向深的局域受体的跃迁．     

GaN纳米棒的催化合成及其发光特性

使用稀土元素Tb作催化剂, 通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜, 成功制备出GaN纳米棒. X射线衍射测试显示, GaN纳米棒具有六方结构. 利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出, 纳米棒为单晶GaN, 纳米棒的直径为50-150 nm, 长度约10 μm. 光致发光谱在368.6 nm处有一强的紫外发光峰, 说明纳米棒具有良好的发光特性. 讨论了GaN纳米棒的生长机制.     

扩镓Si基溅射Ga2O3氮化反应生长GaN薄膜

采用射频磁控溅射在扩镓硅基上溅射Ga2O3氮化反应生长GaN薄膜。用X射线衍射(XRD)、扫描电镜(SEM)、选区电子衍射(SAED)、光电能谱(XPS)和荧光光谱(PL)对样品进行结构、形貌、组分和发光特性的分析。XRD、SAED和XPS分析证明,采用此方法得到六方纤锌矿结构的GaN多晶膜。SEM显示薄膜由均匀、结合紧密的纳米微晶粒组成,其直径约为50～100nm。PL发光谱显示位于344nm处,相对于365nm明显蓝移的带边峰,此发光峰应归功于自由载流子的复合。     

利用Pd催化合成单晶GaN纳米线的光学特性(英文)

基于金属元素钯具有的催化特性,采用射频磁控溅射方法,在Si(111)衬底上沉积Pd:Ga2O3薄膜,然后在950℃下对薄膜进行氨化,制备出大量GaN纳米线.采用扫描电子显微镜(SEM)、X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等技术手段对样品的结构、形貌和成分进行分析.结果表明,制备的样品为具有六方纤锌矿结构的单晶GaN纳米线,直径在20-60nm范围内,长度为几十微米,表面光滑无杂质,结晶质量较高.用光致发光光谱对样品的发光特性进行测试,分别在361.1、388.6和426.3nm处出现三个发光峰,且与GaN体材料相比近带边紫外发光峰发生了较弱的蓝移.对GaN纳米线的生长机制也进行了简单的讨论.     

Mn2+掺杂对低温生长ZnS的形貌及光致发光性能的影响

以Zn粉和S粉为原料,Au纳米颗粒为催化剂,采用低温(450℃)化学气相沉积法(CVD),在Si(100)衬底上制备了未掺杂和Mn2+掺杂的ZnS微纳米结构.利用X射线衍射仪(XRD)、能量弥散X射线谱(EDS)、场发射扫描电子显微镜(SEM)和光致发光光谱(PL)等测试手段对样品的结构、成分、形貌和发光性能进行了分析.结果表明,所得ZnS样品均为六方纤锌矿结构,未掺杂的ZnS为微纳米球,在波长为450和463 nm处有2个发光强度较大的蓝光峰;Mn2+掺杂ZnS为纳米线,在波长479和587 nm处分别有1个微弱的蓝光峰和1个强度相对较大的红光峰.此外,还对ZnS微纳米结构的形成过程进行了探讨,并提出了可能的形成机理.     

不同金属缓冲层对GaN薄膜的光学及电学性能的影响

本文以金属Ga和NH3为原料,Al、Ni和Fe为金属缓冲层,采用化学气相沉积法(CVD)在Si(100)衬底上合成了GaN微米薄膜。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量弥散X射线谱(EDS)、光致发光光谱(PL)和霍尔效应测试仪(HMS-3000)等对GaN微米薄膜进行表征。结果表明,所有样品均为六方纤锌矿结构;样品均出现了很强的近带边紫外发射峰和半峰宽较大的中心波长为672 nm红光发射峰;不同样品的电学性能差异较大。最后对合成的GaN微米薄膜的可能形成机理进行了简单分析。     

不同金属缓冲层对GaN薄膜的光学及电学性能的影响

本文以金属Ga和NH₃为原料,Al、Ni和Fe为金属缓冲层,采用化学气相沉积法(CVD)在Si(100)衬底上合成了GaN微米薄膜。利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量弥散X射线谱(EDS)、光致发光光谱(PL)和霍尔效应测试仪(HMS-3000)等对GaN微米薄膜进行表征。结果表明,所有样品均为六方纤锌矿结构;样品均出现了很强的近带边紫外发射峰和半峰宽较大的中心波长为672nm红光发射峰;不同样品的电学性能差异较大。最后对合成的GaN微米薄膜的可能形成机理进行了简单分析。     

YSi_2纳米颗粒的制备及光学、电学性能研究

采用脉冲激光烧蚀高纯YSi2靶,在n型Si(100)单晶衬底上制备YSi2纳米颗粒。原子力显微镜(AFM)观察样品表面颗粒尺寸约40~50 nm。X射线光电子能谱(XPS)测试结果表明,YSi2纳米颗粒成分为Y-O-Si。室温下对样品的光致发光(PL)性能进行测试,在500 nm处有一个较大的宽峰,409 nm附近出现强度较弱的发光峰。前者与样品中Y-O-Si电荷迁移带有关,后者为衬底表面纳米尺寸SiOx复合中心离子发光。室温下,对原位制备的薄膜电学(I-V/C-V)性能进行测试,结果表明薄膜的介电常数约为13.6。     

Physical and electrical properties of chemical vapor grown GaN Nano/microstructures

Wurtzitic gallium nitride nano- and microleaves were controlled grown through a facile chemical vapor deposition method. This is the first report of GaN nanoleaves, a new morphology of GaN nanostructures. The as-grown GaN structures were characterized by means of X-ray powder diffraction, scanning electron microscopy, energy dispersive X-ray, transmission electron microscopy, and selected area electron diffraction. Raman scattering spectra of the GaN leaves were studied. Field effect transistors based on individual GaN nanoleaves were fabricated, and the electrical transport results revealed a pronounced n-type gating effect of the GaN nanostructures.     

Co-templating synthesis of highly dispersed 1D ZnO nanostructures in amorphous SiO2 under hydrothermal condition

One-dimensional (1D) ZnO nanostructures were grown in amorphous SiO₂ matrix by a co-templating method under hydrothermal condition. Using ethylenediamine (EDA) groups grafted mesoporous silica MCM-41 as a co-template, the growth of 1D ZnO nanostructures was oriented by soft EDA groups and confined inside the hard mesochannels of MCM-41. The microstructure and morphology of the 1D-ZnO-nanostructures/SiO₂ composite were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray energy dispersive spectroscopy (EDS). All these results indicate that the 1D ZnO nanostructures were synthesized and highly dispersed in the amorphous SiO₂ matrix. Blue-shifted exciton absorption was observed from the co-templating synthesized sample.     

Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts

A new method using defect-pit-assisted growth technology to successfully synthesize the high-quality single crystalline GaN nanostructures by ammoniating Ga(2)O(3) films was proposed in this paper. During the ammoniating process, the amorphous middle buffer layer may unavoidably produce some defects and dislocations. Some defect pits come out, which have the lowest surface energy and can subsequently be used as a mask/template or act as potential nucleation sites to fabricate the GaN actinomorphic nanostructures. The as-prepared products are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results indicate that all the reflections of the samples can be indexed to the hexagonal GaN phase and the clear lattice fringes in HRTEM further confirm the growth of high-quality single-crystal GaN nanostructures. The SEM images show that the nanostructures have been realized under different experimental conditions exhibiting different shapes: nanowires, nanorods, and nanobelts. No particles or other nanostructures are found in the SEM study, demonstrating that the product possesses pure nanostructures. These nanostructures show a very good emission peak at 366 nm, which will have a good advantage for applications in laser devices using one-dimensional structures. Finally, the growth mechanism is also briefly discussed.     

树枝状钯纳米结构的控制合成及硝基苯加氢反应的催化活性

以氯钯酸为前驱体, 苯甲醇为还原剂和溶剂, 十六烷基吡咯烷酮(PVP)为稳定剂, 在微波辐射下制备了分散均匀、形貌均一的树枝状钯纳米结构. 产物用透射电子显微镜(TEM), X射线粉末衍射(XRD), X射线光电子能谱(XPS)进行了表征, 表明所制备的Pd纳米颗粒呈树枝状, 形貌单一, 分散均匀, 是由许多近似圆形的小颗粒自组装而成的二级结构. 对树枝状钯催化硝基苯加氢反应进行探究, 表明树枝状钯的催化活性比市售的钯碳催化剂的催化活性高.     

钨酸锌纳米结构的水热合成及其光催化性能研究

使用柠檬酸钠辅助的水热法合成了具有不同形貌的ZnWO4(如片状、花状)纳米颗粒,并采用X-射线粉末衍射(XRD)、场发射扫描电子显微镜(FESEM)、高分辨透射电子显微镜(HRTEM)等方法对样品的结构和组成进行表征。研究了溶剂组分和溶液pH值对产物形貌的影响。通过对反应产物形貌随时间变化的观察,提出了片状和花状ZnWO4纳米颗粒可能的生长机理。以罗丹明B(RhB)为催化降解对象,对样品在水溶液中的光催化性质进行了研究。结果表明,ZnWO4纳米颗粒的比表面积和孔径尺寸等结构特性对其光催化活性具有明显影响。     

Additive assisted hydrothermal synthesis,characterization and optical properties of one dimensional DyPO4:Ce3+ nanostructures

One dimensional nanostructures of cerium doped dysprosium phosphate (DyPO₄:Ce³⁺) were synthesized via hydrothermal route in the presence of different surfactants [sodium dodecyl sulfate (SDS), dodecyl sulfosuccinate (DSS), polyvinyl pyrollidone (PVP)] and solvent [ethylene glycol and water]. The prepared nanostructures were characterized by Powder X-ray diffraction (PXRD), Fourier transform infrared spectroscopy (FTIR), Field emission scanning electron microscopy (FE-SEM), Transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), UV-VIS-NIR absorption spectrophotometer and photoluminescence (PL) studies. The PXRD and FTIR results indicate purity, good crystallinity and effective doping of Ce³⁺ in nanostructures. SEM and TEM micrographs display nanorods, nanowires and nanobundles like morphology of DyPO₄:Ce³⁺. Energy-dispersive X-ray spectra (EDS) of DyPO₄:Ce³⁺nanostructures confirm the presence of dopant. UV-VIS-NIR absorption spectra of prepared compounds are used to calculate band gap and explore their optical properties. Luminescent properties of DyPO₄:Ce³⁺ was studied by using PL emission spectra. The effect of additives and solvents on the uniformity, morphology and optical properties of the nanostructures were studied in detail.     

Controlled synthesis of urchin-like Bi2S3 via hydrothermal method

The urchin-like Bi₂S₃ nanostructures have been grown by a facile environmentally friendly hydrothermal method. X-ray diffraction (XRD) and Raman spectrum demonstrate that the obtained samples are composed of pure orthorhombic phase Bi₂S₃. Scanning electron microscopy (SEM) images and transmission electron microscopy (TEM) images reveal that it is produced as uniform urchin-like pattern with spherical symmetry. High-resolution (HR) TEM and selected-area electron diffraction (SAED) demonstrate that the nanowires which grow radially from the center of the urchin-like nanostructures toward all directions are single-crystalline and grow along the [001]. It is found that the reaction time, reaction temperature and thiourea (Tu) play key roles for the formation of urchin-like Bi₂S₃ nanostructures. The formation mechanism is ascribed to self-assembly and the intrinsic splitting character of the Bi₂S₃ structure. The urchin-like Bi₂S₃ composed of porous nanorods, solid nanorods and nanowires could be found potential application in optical, catalysts and sensor devices.     

Synthesis of SnO2 nanostructures by ultrasonic-assisted sol–gel method

Fluorine doped SnO₂ nanostructures were grown using ultrasonic assisted sol–gel method. The gel was obtained by dissolving stannous chloride in methanol with ammonium fluoride as dopant followed by irradiation with ultrasonic vibrations. Obtained samples were characterized by structural, morphological and optical studies. All the peaks in the X-ray diffractograms are identified and indexed as tetragonal cassiterite structure. Negative slope of Williamson–Hall plots indicates compressive strain. Particle size of SnO₂ nanostructures is decreases with increases in concentration of fluorine doping. Atomic force microscopy, scanning electron microscopy and transmission electron microscopy studies confirm the formation of ring like porous structures and then hollow tube like growth with increase in the fluorine concentration. Peaks in Raman spectra also indicate strong confinement in SnO₂ particles. Distinct peaks in the PL spectra make the structure suitable for photovoltaic applications.