Infrared-to-green upconversion luminescence and mechanism of Ho3+, Nd3+ and Yb3+ ions in oxyfluoride glass ceramics

New oxyfluoride glasses and glass ceramics co-doped with Nd^{3+}, Yb^{3+} and Ho^{3+} were prepared. The upconversion of infrared radiation into green fluorescence has been studied for Nd^{3+}, Yb^{3+} and Ho^{3+} in the transparent oxyfluoride glass ceramics. At room temperature very strong green upconversion luminescence due to the Ho^{3+}: ({}^5F_4, {}^5S_2)→{}^5I_8 transition under 800 nm excitation was observed in the glass ceramics. The intensity of the green upconversion luminescence in a 1mol% YbF_3-containing glass ceramic was found to be about 120 times stronger than that in the precursor oxyfluoride glass. The reason for the highly efficient Ho^{3+} upconversion luminescence in the oxyfluoride glass ceramics is discussed. The upconversion mechanism is also investigated.     

Frequency Upconversion Fluorescence Emission of Er^3＋-Doped Oxychloride Germanate Glass

Frequency upconversion fluorescence property of Er^3 -doped oxychloride germanate glass is investigated. Intense green and red emissions centred at 525, 546, and 657nm, corresponding to the transitions ^2H11/2→4I15/2,^4S3/2→^4I15/2, and ^4F9/2→^4I15/2, respectively, were simultaneously observed at room temperature. The quadratic dependence of the 525, 546, and 657nm emissions on excitation power indicates that a two-photon absorption process occurs under 975 nm laser diode (LD) excitation. The Raman spectrum investigation indicates that oxychloride germanate glass has the maximum phonon energy at-805cm^-1. The thermal stability of this oxychloride germanate glass is evaluated by differential scanning calorimetry, and thermal stability factor AT(△T = Tx -Tg) is 187℃. Intense upconversion luminescence and good thermal stability indicate that Er^3 -doped oxychloride germanate glass is a promising upconversion laser material.     

Blue Upconversion Luminescence in Tm^3＋／Yb^3＋-Codoped Lead Chloride Tellurite Glass

The upconversion properties of Tm^3 /Yb3 -codoped lead chloride tellurite glass under 980hm excitation were investigated. The intense blue (476nm) emission and weak red (649 nm) emission corresponding to the ^1G4→4 ^3H6 and ^1G4→^3H4 transitions of Tm^3 ions, respectively, were simultaneously observed at room temperature. The dependence of upconversion intensities on excitation power and the possible upconversion mechanisms are evaluated. The intense blue upconversion luminescence of Tm^3 /Yb^3 -codoped lead chloride tellurite glass can be used as potential host material for the development of blue upconversion optical devices.     

Optical transitions in Er^3＋ doped lead germanate glasses

Er^{3+}- and Er^{3+}/Yb^{3+}-doped lead germanate glasses that are suitable for use in fibre lasers and optical amplifiers as well as optical waveguide devices have been fabricated and characterized. The absorption spectra from near-infrared to visible were obtained and the Judd－Ofelt parameters were determined from the absorption band. Intense and broad 1.53μm infrared fluorescence and visible upconversion luminescence were observed under 976 nm diode laser excitation. For 1.53μm emission band, the full widths at half-maximum are 36, 37, 51 nm for GPE, GPYE and GPFE samples, respectively. For frequency upconversion emission, the intense bands centred at around 524, 545, 657nm are due to the {}^4S_{3/2}+{}^2H_{11/2}→{}^4I_{15/2} and {}^4F_{9/2}→{}^4I_{15/2} transitions of Er^{3+} ions. The quadratic dependence of the green and red emissions on excitation power indicates that the two-photon absorption process occurs under the 976nm excitation.     

Laser-diode excited intense upconversion luminescence of Er^3＋ in bismuth-lead-germanate glasses

We have investigated infrared-to-visible upconversion luminescence of Er^3＋ in bismuth-lead-germanate glasses. The UV cutoff wavelength is shortened while its lifetime is increased almost linearly, with PbF2 substituting for PbO in the bismuth-lead germanate glasses. Three emissions centred at around 529, 545 and 657 nm are clearly observed, which are identified as originating from the ^2H11/2→^4 I15/2,^4S3/2→^4 I15/2 and ^4 F9/2 →^4 I15/2 transitions, respectively. It is noted that all the upconversion emission intensities increase with PbF2 concentration increasing. The ratio between the intensities of red and green emissions increases with the increasing of PbF2 content. Energy transfer processes and nonradiative phonon-assisted decays account for the populations of the ^2 H11/2,^4 S3/2 and ^4F 9/2 levels. The quadratic dependence of fluorescence on excitation laser power confirms a two-photon process to contribute to the upconversion emissions.     

Host dependent thermal stability and frequency upconversion of Er^3＋-doped heavy metal oxyfluoride germanate glasses

The upconversion properties of Er^3＋-doped heavy metal oxyfluoride germanate glasses under 975 nm excitation have been investigated. The intense green （551 and 529 nm） and relatively weak red （657 nm） emissions corresponding to the transitions ^4S3/2→^4I15/2, ^2H11/2→^4 I15/2 and ^4F9/2 →^4I15/2, respectively, were simultaneously observed at room temperature. The content of PbF2 has an important influence on the upconversion luminescence emission. With increasing content of PbF2, the intensities of green （529 nm） and red （657 nm） emissions increase slightly, while the green emission （551 nm） increases markedly. These results suggest that PbF2 has an influence on the green （551 nm） emission more than on the green （529 nm） and red （657 nm） emissions.     

Optical transitions and upconversion properties of Er^3＋-doped chloride tellurite glasses

Er^{3+}-doped lead chloride tellurite glasses were prepared using the conventional melting and quenching method. The absorption spectra were measured and the Judd－Ofelt analysis was performed. The spectroscopic parameters such as the intensity parameters, transition probabilities, radiative lifetimes, and branching ratios were obtained. Intense infrared emission and visible upconversion luminescence under 976 nm excitation were observed. For the 1.55μm emission, the full width at half maximum and the emission cross sections are more than 50 nm and 8×10^{- 20}cm^2, respectively. Three efficient visible luminescences centred at 525, 547, and 658nm are assigned to the transitions from the excited states {}^{2}H_{11/2}, {}^{4}S_{3/2}, and {}^{4}F_{9/2} to the ground state {}^{4}I_{15/2}, respectively. The upconversion mechanisms and the power-dependent intensities are also discussed and evaluated.     

Ultraviolet and visible upconversion dynamics in Er^3＋：YAlO3 under ^2H11/2 excitation

The luminescence of Er^3＋：YAlO3 in ultraviolet visible and infrared ranges under the 518 nm excitation of the multiples ^2H11/2 have been investigated. Ultraviolet （275 nm and 318 nm）, violet （405 nm and 413 nm） and blue （474 nm） upconversion and infrared downconversion luminescence has been observed. By means of measuring the fluorescence decay curves and using the theory of rate equations, the luminescence kinetics was studied in detail and the processes of energy transfer upconversion （ETU） and excitation state absorption （ESA） were proposed to explain the upconversion phenomena.     

Upconversion Luminescence Dynamics in Er^3＋/Yb^3＋ Codoped Nanocrystalline Yttria

The upconversion luminescence and dynamics in Er^3＋ /Yb^3＋ codoped nanocrystalline yttria （7-65 nm） are studied under 980-nm pulsed laser excitation, It is found that the red emission of ^4F9/2-^4I15/2 and the green emission of ^2H11/2/^4S3/2 in nanoparticles with lower concentration of Yb^3＋ result from a two-photon excitation, In nanocrystals with higher Yb^3＋ concentration, the red emissions from a two-photon excitation, while the green emissions from a three-photon excitation, The luminescence dynamics indicates that as the particle size decreases, both the rise and the decay time constants become shorter, As the size decreases to several nanometres, the rise process nearly disappears, suggesting that the upconversion luminescence originates mainly from self-excitation of Er^3＋, instead of the energy transfer of Yb^3＋→ Er^3＋.     

High Efficiency Infrared to Visible Upconversion in Er3＋／yb3＋—Doped Lead Halide Tellurite Glass

Strong upconversion luminescence of Er3 /Yb3 -doped lead halide tellurite glass under 976nm excitation is demonstrated. Three emission bands centred at 525 nm, 545 nm, and 655 nm resulting from the transitionsfrom the excited states 2H11/2, 4S3/2, and 4F9/2 to the ground state 4I15/2, respectively, are observed evenat 60mW pumping power. The power dependent intensity and the upconversion mechanisms responsible forthe luminescence are evaluated and discussed. The obtained results might provide useful information for thedevelopments of upconversion lasers.     

Isotopic effect of Cl2+ rovibronic spectra in the A-X system

This paper studies the isotopic effect of Cl2+ rovibronic spectra in the A2Πu(Ω=1/2) X 2Πg(Ω= 1/2) system.Based on the experimental results of the molecular constants of 35 Cl2+,it calculates the vibrational isotope shifts of the(2,7) and(3,7) band between the isotopic species 35 Cl+2,35 Cl 37 Cl+and 37 Cl2+,and estimates the rotational constants of both A 2 Π u and X 2 Π g states for the minor isotopic species 35 Cl 37 Cl+and 37 Cl2+.The experimental results of the spectrum of 35 Cl 37 Cl+(3,7) band proves the above mentioned theoretical calculation.The molecular constants and thus resultant rovibronic spectrum for 37 Cl2+ were predicted,which will be helpful for further experimental investigation.     

Spin polarization effect for Os2 molecule

Density functional Theory （DFT） （B3p86） of Gaussian03 has been used to optimize the structure of Os2 molecule. The result shows that the ground state for Os2 molecule is 9-multiple state and its electronic configuration is ^9∑^＋g, which shows spin polarization effect of Os2 molecule of transition metal elements for the first time. Meanwhile, we have not found any spin pollution because the wavefunction of the ground state does not mingle with wavefunctions with higher energy states. So, the fact that the ground state for Os2 molecule is a 9-multiple state is indicative of spin polarization effect of Os2 molecule of transition metal elements. That is, there exist 8 parallel spin electrons. The non-conjugated electron is greatest in number. These electrons occupy different spacious tracks, so that the energy of Os2 molecule is minimized. It can be concluded that the effect of parallel spin of Os2 molecule is larger than the effect of the conjugated molecule, which is obviously related to the effect of electron d delocalization. In addition, the Murrell-Sorbie potential functions with the parameters for the ground state ^9∑^＋g and other states of Os2 molecule are derived. Dissociation energy De for the ground state of Os2 molecule is 3.3971eV, equilibrium bond length Re is 0.2403nm, vibration frequency ωe is 235.32cm^-1. Its force constants f2, f3, and f4 are 3.1032×10^2aJ·nm^-2, -14.3425×10^3aJ·nm^-3 and 50.5792×10^4aJ·nm^-4 respectively. The other spectroscopic data for the ground state of Os2 molecule ωexe, Be and ae are 0.4277cm^- 1, 0.0307cm^- 1 and 0.6491 × 10^-4cm^-1 respectively.     

The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi硅化镍;欧姆触点;n型碳化硅;制造;能带;带隙Project supported by the National Basic Research Program of China (Grant No~2002CB311904), the National Defense Basic Research Program of China (Grant No~51327010101) and the National Natural Science Foundation of China (Grant No~60376001).2006-09-192006-10-30This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.     

The splitting of low-lying states for hydroxyl molecule under spin--orbit coupling

The splitting of potential energy curves for the states $X^{2}\Pi _{3/2}$, $^{2}\Pi _{1/2}$ and $A^{2}\Sigma ^{ +}$ of hydroxyl OH under spin--orbit coupling (SOC) has been calculated by using the SO multi-configuration quasi-degenerate perturbation theory (SO-MCQDPT). Their Murrell--Sorbie (M--S) potential functions have been derived, then, the spectroscopic constants for $X^{2}\Pi _{3/2}$,$^{ 2}\Pi _{1/2}$ and $A^{2}\Sigma ^{ + }$ have been derived from the M--S function. The calculated dissociation energies for the three states are $D_{0}$[OH($X^{2}\Pi _{3/2})$]=34966.632cm$^{-1}$, $D_{0}$[OH($^{2}\Pi _{1/2})$]=34922.802cm$^{-1}$, and $D_{0}$[OH($A^{2}\Sigma ^{ + })$]=17469.794cm$^{-1}$, respectively. The vertical excitation energy $\nu [ {{ }^2\Pi _{1/2} ( {\nu = 0} ) \to {X}{ }^2\Pi _{3/2} ( {\nu = 0} )} ] = 139.6{\rm cm}^{-{\rm 1}}$. All the spectroscopic data for the $X^{2}\Pi _{3/2}$ and $^{2}\Pi _{1/2 }$ are given for the first time except the dissociation energy of $X^{2}\Pi _{3/2}$.     

Optical parameters and energy levels splitting of Ho^3＋ in Ho^3＋： GdVO4

Ho^3＋ ： GdVO4 is a new laser material suitable for high-power laser systems. In this paper we measure the absorption spectra of Ho^3＋ in the sample Ho^3＋： GdVO4. The intensity parameters are calculated by using the Judd-Ofelt theory. Some predicted spectroscopic parameters, such as the spontaneous radiative transition rate, branching ratio and integrated emission cross section are dealt with. And we also compare the optical parameters with those of other materials. From these results, it is found that there are many transitions which have large oscillator strengths and large integrated emission cross sections. Especially the transitions such as ^5 F4 → ^5 I 8, ^5 S2→^5 I8, ^5 F5 → ^5 I8 and ^5 I7 →^ 5 I8 are useful in solid-state lasers and other fields. Finally, we discuss the splitting of the energy levels of Ho^3＋ in the crystal GdVO4 based on the group theory.     

Synthesis and photoluminescence properties of Nd2O3 nanoparticles modified by sodium bis 2-ethylhexyl sulfosuccinate

This paper reports that Nd₂O₃ nanoparticles modified by AOT(sodium bis(2-ethylhexyl) sulfosuccinate) were prepared using microemulsion method in the system of water and propanol/AOT/toluene. Transmission electron microscopy shows that the Nd₂O₃ nanoparticles take the shape of sphere with 18\,nm and 31nm with different preparation. The organic sol of Nd₂O₃ nanoparticles is very stable at room temperature. X-ray diffraction results show that the product has hexagonal phase structure. Two ultraviolet emission band at 344\,nm and 361\,nm corresponding to the transition of ⁴D_3/2→4I_9/2 and 2P_3/2→⁴I₁₁₂ or ⁴D_3/2 →⁴I_13/2 were observed.     

Enhanced interface properties of diamond MOSFETs with Al_2O_3 gate dielectric deposited via ALD at a high temperature

The interface state of hydrogen-terminated(C–H) diamond metal–oxide–semiconductor field-effect transistor(MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C–H diamond MOSFETs by using different gate dielectric processes. The devices use Al_2O_3 as gate dielectrics that are deposited via atomic layer deposition(ALD) at 80℃ and 300℃, respectively, and their C–V and I–V characteristics are comparatively investigated. Mott–Schottky plots(1/C~2–VG) suggest that positive and negative fixed charges with low density of about 1011 cm~(-2) are located in the 80-℃-and 300-℃ deposition Al_2O_3 films, respectively. The analyses of direct current(DC)/pulsed I–V and frequency-dependent conductance show that the shallow interface traps(0.46 e V–0.52 e V and0.53 e V–0.56 e V above the valence band of diamond for the 80-℃ and 300-℃ deposition conditions, respectively) with distinct density(7.8 × 10~(13) e V~(-1)·cm~(-2)–8.5 × 10~(13) e V-1·cm~(-2) and 2.2 × 1013 e V~(-1)·cm~(-2)–5.1 × 10~(13) e V~(-1)·cm~(-2) for the80-℃-and 300-℃-deposition conditions, respectively) are present at the Al_2O_3/C–H diamond interface. Dynamic pulsed I–V and capacitance dispersion results indicate that the ALD Al_2O_3 technique with 300-℃ deposition temperature has higher stability for C–H diamond MOSFETs.     

Multireference configuration interaction potential curve and analytical potential energy function of the ground and low-lying excited states of CdSe

The potential energy curves (PECs) of the ground state ($^{3}\Pi )$ and three low-lying excited states ($^{1}\Sigma $, $^{3}\Sigma $,$^{ 1}\Pi )$ of CdSe dimer have been studied by employing quasirelativistic effective core potentials on the basis of the complete active space self-consistent field method followed by multireference configuration interaction calculation. The four PECs are fitted to analytical potential energy functions using the Murrel--Sorbie potential function. Based on the PECs, the vibrational levels of the four states are determined by solving the Schr\"{o}dinger equation of nuclear motion, and corresponding spectroscopic constants are accurately calculated. The equilibrium positions as well as the spectroscopic constants and the vibrational levels are reported. By our analysis, the $^{3}\Pi $ state, of which the dissociation asymptote is Cd($^{1}$S) + Se($^{3}$P), is identified as a ground state of CdSe dimer, and the corresponding dissociation energy is estimated to be 0.39\,eV. However, the first excited state is only 1132.49\,cm$^{ - 1}$ above the ground state and the $^{3}\Sigma $ state is the highest in the four calculated states.     

Spin polarization effect for molecule Ta2

Density functional theory （DFT） （B3p86） has been used to optimize the structure of the molecule Ta2. The result shows that the ground state of molecule Ta2 is a 7-multiple state and its electronic configuration is ^7∑u^＋, which shows the spin polarization effect for molecule Ta2 of transition metal elements for the first time. Meanwhile, spin pollution has not been found because the wavefunction of the ground state does not mix with those of higher states. So, the fact that the ground state of molecule Ta2 is a 7-multiple state indicates a spin polarization effect of molecule Ta2 of the transition metal elements, i.e. there exist 6 parallel spin electrons and the non-conjugated electrons are greatest in number. These electrons occupy different space orbitals so that the energy of molecule Ta2 is minimized. It can be concluded that the effect of parallel spin of the molecule Ta2 is larger than the effect of the conjugated molecule, which is obviously related to the effect of d-electron delocalization. In addition, the Murrell-Sorbie potential functions with parameters for the ground state ^7∑u^＋ and other states of the molecule Ta2 are derived. The dissociation energy De, equilibrium bond length Re and vibration frequency we for the ground state of molecule Ta2 are 4.5513eV, 0.2433nm and 173.06cm^-1, respectively. Its force constants f2, f3 and f4 are 1.5965×10^2aJ.nm^-2, -6.4722×10^3aJ·nm^-3 and 29.4851×10^4aJ·nm^-4, respectively. Other spectroscopic data we xe, Be and αe for the ground state of Ta2 are 0.2078cm^-1, 0.0315 cm^-1 and 0.7858×10^-4 cm^-1, respectively.