Electronic structure and optical properties of Nb-doped Sr2TiO4 by density function theory calculation

This paper investigates the effect of Nb doping on the electronic structure and optical properties of Sr2TiO4 by the first-principles calculation of plane wave ultra-soft pseudo-potential based on density functional theory(DFT).The calculated results reveal that due to the electron doping,the Fermi level shifts into conduction bands(CBs) for Sr2 Nb x Ti1 x O4 with x=0.125 and the system shows n-type degenerate semiconductor features.Sr2TiO4 exhibits optical anisotropy in its main crystal axes,and the c-axis shows the most suitable crystal growth direction for obtaining a wide transparent region.The optical transmittance is higher than 90% in the visible range for Sr2 Nb 0.125Ti0.875O4.     

Structural and electronic properties of Fe-doped BaTiO3 and SrTiO3

We have performed first principles calculations of Fe-doped BaTiO3 and SrTiO3. Dopant formation energy, structure distortion, band structure and density of states have been computed. The dopant formation energy is found to be 6.8eV and 6.5eV for Fe-doped BaTiO3 and SrTiO3 respectively. The distances between Fe impurity and its nearest O atoms and between Fe atom and Ba or Sr atoms are smaller than those of the corresponding undoped bulk systems. The Fe defect energy band is obtained, which mainly originates from Fe 3d electrons. The band gap is still an indirect one after Fe doping for both BaTiO3 and SrWiO3, but the gap changes from Γ-R point to Γ-X point.     

First-principles study of La and Sb-doping effects onelectronic structure and optical properties of SrTiO3

The effects of La and Sb doping on the electronic structure and optical properties of SrTiO 3 are investigated by first-principles calculation of the plane wave ultra-soft pseudo-potential based on density functional theory. The calculated results reveal that corner-shared TiO 6 octahedra dominate the main electronic properties of SrTiO 3 , and its structural stability can be improved by La doping. The La 3+ ion fully acts as an electron donor in Sr 0.875 La 0.125 TiO 3 and the Fermi level shifts into the conduction bands (CBs) after La doping. As for SrSb 0.125 Ti 0.875 O 3 , there is a distortion near the bottom of the CBs for SrSb 0.125 Ti 0.875 O 3 after Sb doping and an incipient localization of some of the doped electrons trapped in the Ti site, making it impossible to describe the evolution of the density of states (DOS) within the rigid band model. At the same time, the DOSs of the two electron-doped systems shift towards low energies and the optical band gaps are broadened by about 0.4 and 0.6 eV for Sr0.875La0.125TiO3 and SrSb0.125Ti0.875O3 , respectively. Moreover, the transmittance of SrSb0.125Ti0.875O3 is as high as 95% in most of the visible region, which is higher than that of Sr0.875La0.125TiO3 (85%). The wide band gap, the small transition probability and the weak absorption due to the low partial density of states (PDOS) of impurity in the Fermi level result in the significant optical transparency of SrSb0.125 Ti0.875 O3 .     

空位缺陷对β-AgVO_3电子结构和光吸收性能的影响

基于密度泛函的第一性原理研究了Ag空位、O空位和Ag-O双空位对β-AgVO_3的电子结构及光学性质的影响.采用广义梯度近似平面波超软赝势GGA+U方法,对不同缺陷体系的形成能、能带结构、电子态密度、差分电荷密度和吸收光谱进行了计算和分析.通过比较不同Ag空位和O空位的形成能,确定了β-AgVO_3中主要形成Ag3空位和O1空位,并且Ag空位较O空位更容易形成.Ag3空位和O1空位的存在都使得β-AgVO_3带隙有一定程度的减小;Ag3空位使β-AgVO_3呈现p-型半导体性质,而O1空位和Ag3-O1双空位使β-AgVO_3呈现n-型半导体性质.Ag3和O1空位对晶体在可见光范围内的光吸收影响较小.     

萤石结构TiO2的电子结构和光学性质

利用第一性原理计算了立方相萤石TiO₂的晶胞参数,能带结构和电子态密度.结果显示萤石TiO₂属于间接带隙半导体材料,其间接禁带宽度(Γ→X)E_g为2.07eV,比常见的金红石和锐钛矿TiO₂的禁带宽度窄.为了更清楚地了解萤石的光学性质,利用Kramers-Kronig色散关系,分别对萤石和金红石TiO₂的复介电常数、吸收率等参数进行了计算,并将二者结果做了 关键词： 2')" href="#">萤石结构TiO₂ 密度泛函理论 能带结构 光学性质     

萤石结构TiO2的电子结构和光学性质

利用第一性原理计算了立方相萤石TiO₂的晶胞参数，能带结构和电子态密度.结果显示萤石TiO₂属于间接带隙半导体材料，其间接禁带宽度(Γ→X)E_g为2.07eV，比常见的金红石和锐钛矿TiO₂的禁带宽度窄.为了更清楚地了解萤石的光学性质，利用Kramers-Kronig色散关系，分别对萤石和金红石TiO₂的复介电常数、吸收率等参数进行了计算，并将二者结果做了     

用密度泛函理论研究氮化硅新相的电子结构、光学性质和相变

运用第一性原理赝势方法,对氮化硅新相(六方Pˉ6和Pˉ6′相)的电子结构、光学性质和相变过程进行分析,研究能带结构、介电函数谱、反射谱和能量损失函数的变化机理.研究发现,β→Pˉ6→δ相变是可行的,在室温下β→Pˉ6和Pˉ6→δ相变的临界压强分别为42.9和47.7 GPa;相界的斜率为正值表明Pˉ6→δ相变过程伴随着晶胞体积的塌缩;Pˉ6和Pˉ6′相分别属于直接带隙和间接带隙半导体,能隙宽度分别为4.98和4.01 eV;得到了两相的零频介电常数;反射谱表明,两相的强反射峰均位于真空紫外线区域,因此可以用作紫外光屏蔽或紫外探测材料;在可见光区域,两相表现为近似透明.     

超晶格SnO2掺Cr的电子结构和光学性质的研究

基于密度泛函理论的第一性原理,采用全势线性缀加平面波方法(FPLAPW)和广义梯度近似(GGA)来处理相关能,计算了Cr掺杂SnO₂超晶格的电子态密度、能带结构、介电函数、吸收系数、反射率和折射率.研究表明由于Cr的掺入,超晶格SnO₂在费米能级附近形成了新的电子占据态,出现了不连续的杂质能带,这是由Cr-3d态和O-2p,Sn-5s态电子所形成.介电谱在0—5.5 eV之间时出现了三个新的介电峰,在高能区介电谱主峰位置发生蓝移,峰值强度减小.吸收谱、反射谱和折 关键词： 超晶格 第一性原理 态密度 电子结构     

Rb2TeW3O12电子结构及光学性质的第一性原理研究

采用平面波超软赝势法对Rb2TeW3O12基态的几何结构、能带结构和光学特性等进行了系统的研究.几何结构研究不仅对基态平衡时的几何参量进行了优化计算，还对内部坐 标做了优化，其结果和实验测量值符合得很好.电子结构的研究表明，Rb2TeW3O12 属于宽禁带直接带隙半导体，禁带宽度为223eV，W 5d和O 2p轨道之间强烈杂化形成W— O共价键.计算了光学性质，给出了Rb2TeW3O12的介电函数实部ε1、虚部ε 2及相关光学参量，理论计算的静态介电常数为529 关键词： Rb2TeW3O12 电子结构 介电函数 密度泛函理论     

0.5NdAlO3-0.5CaTiO3电子结构及光学性质的第一性原理计算

采用基于第一性原理密度泛函理论的平面波赝势方法,对0.5NdAlO₃-0.5CaTiO₃晶体进行结构优化,并对其能带结构,态密度和光学性质进行了理论计算.结构优化后晶格参数与实验数据相符合,误差小于1%;能带计算结果表明0.5NdAlO₃-0.5CaTiO₃为间接带隙,带隙值为0.52eV;费米面附近的能带由Nd-4f,O-2p,Nd-4p,Al-3p,Ti-4d层的电子态密度确定.同时也计算了该结构的介电函数,反射率和复折射率等光学性质.     

BiTiO3电子结构及光学性质的第一性原理研究

采用基于第一性原理的赝势平面波方法, 对BiTiO₃的多种结构进行了计算. 计算结果表明, C1C1结构最为稳定, 对应晶格参数为a=b=5.606 Å, c=9.954 Å; α=β=105.1°, γ=61.2°. 进一步对C1C1结构的BiTiO₃的能带结构、电子性质和光学性质进行了研究, 发现BiTiO₃是间接带隙半导体, 其费米面附近的能带主要由Ti-3d和O-2p层的电子态构成. 通过介电函数、复折射率和反射率等的研究, 发现BiTiO₃的光学性质为近各向同性.     

YFeO3的电子结构和光学性质的第一性原理研究

稀土正铁氧体YFeO₃呈正交钙钛矿结构,其晶体和纳米晶材料在电极材料、 传感器和光催化领域具有重要的应用价值.用平面波赝势方法,采用广义梯度近似、改进的Perdew-Burke-Emzerhof交换-关联势、 实空间超软赝势计算方案,研究了YFeO₃晶体的几何结构、电子结构和光学性质. 计算得到的晶格参量与报道的实验结果一致.通过对能带结构、态密度、介电函数、吸收系数和光电导率的计算和分析, 确定YFeO₃是直接能隙半导体,能隙E_g约为2.22 eV,阐明了YFeO₃晶体和纳米晶具有较好的可见光催化性能.     

Electronic structure and optical properties of LiXH3 and XLiH3 （X= Be,B or C）

The equilibrium lattice constant, the cohesive energy and the electronic properties of light metal hydrides LiXH3 and XLiH3 （X = Be, B or C） with perovskite lattice structures have been investigated by using the pseudopotential plane-wave method. Large energy gap of LiBeH3 indicates that it is insulating, but other investigated hydrides are metallic. The pressure-induced metallization of LiBeH3 is found at about 120 GPa, which is attributed to the increase of Be-p electrons with pressure. The electronegativity of the p electrons of X atom is responsible for the metallicity of the investigated LiXH3 hydrides, but the electronegativity of the s electrons of X atom plays an important role in the metallicity of the investigated XLiH3 hydrides. In order to deeply understand the investigated hydrides, their optical properties have also been investigated. The optical absorption of either LiBeH3 or BeLiH3 has a strong peak at about 5 eV, showing that their optical responses are qualitatively similar. It is also found that the optical responses of other investigated hydrides are stronger than those of LiBeH3 and BeLiH3 in lower energy ranges, especially in the case of CLiH3.     

Ba(Mg1/3Nb2/3)O3电子结构第一性原理计算及光学性能研究

Ba(Mg_1/3Nb_2/3)O₃ (BMN)复合钙钛矿陶瓷具有高介电常数和高品质因子等介电性能, 预示了其在光学领域的应用前景. 本文采用第一性原理方法计算了BMN的电子结构, 对其本征光学性能进行分析和预测. 对固相合成六方相BMN的XRD 测试结果进行Rietveld精修(加权方差因子R_wp=6.73%, 方差因子R_p=5.05%), 在此基础上建立晶体结构模型并对其进行几何优化. 运用基于密度泛函理论(DFT)的平面波赝势方法, 对六方相BMN晶体模型的能带、态密度和光学性质进行理论计算. 结果表明BMN的能带结构为间接带隙, 禁带宽度E_g=2.728 eV. Mg-O和Ba-O以离子键结合为主, Nb-O以共价键结合为主, 费米面附近的能带主要由O-2p和Nb-4d 态电子占据, 形成了d-p轨道杂化. 修正带隙后, 计算了BMN沿[100]和[001]方向上的复介电函数、吸收系数和反射率等光学性质. 结果表明, BMN近乎光学各向同性, 在可见光区, 其本征透过率为77%< T <83%, 折射率为1.91< n <2.14, 并伴随一定的色散现象. 实验测试结果与理论计算结果相吻合.     

第一性原理方法研究N-Pr共掺杂ZnO的电子结构和光学性质

作为一种稳定性好、抗辐射能力强、原材料丰富的宽禁带半导体, ZnO在光催化的研究领域中成为热点材料,但是其仅能吸收可见光中的紫光,因此如何扩大ZnO对可见光的响应范围是一个值得研究的问题.掺杂改性是解决这个问题的常用方法.基于以上考量,本文应用第一性原理计算方法研究了N与Pr掺杂对ZnO的电子结构和光学性质的影响.研究结果表明:共掺体系比单掺体系更容易形成,且共掺体系的稳定性随Pr浓度的增加先增强后变弱;同一体系的最短Zn—O键与最长Zn—O键的布居数比例随杂质浓度的增大先增大后减小,说明杂质的掺入对体系的晶格畸变有很大的影响,有利于光生空穴-电子对的分离,从而提高材料的光催化活性. N 2p态与Pr 4f态发生杂化对晶体的完整性产生了破坏,在杂质原子周围形成晶场,造成能级劈裂,带隙减小;介电函数虚部的主峰位均向低能区域移动,吸收光谱中各掺杂体系发生红移,各共掺体系随着杂质原子Pr浓度的增加,在可见光区的响应范围依次扩大,吸收能力也依次增加,说明N与Pr的共掺杂对提高ZnO的光催化性是有利的.     

Structural, electronic and optical properties of orthorhombic distorted perovskite TbMnO3

This paper calculates the structural parameters, electronic and optical properties of orthorhombic distorted perovskite-type TbMnO3 by first principles using density functional theory within the generalised gradient approximation. The calculated equilibrium lattice constants are in a reasonable agreement with theoretical and experimental data. The energy band structure, density of states and partial density of states of elements are obtained. Band structures show that TbMnO3 is an indirect band gap between the O 2p states and Mn 3d states, and the band gap is of 0.48 eV agreeing with experimental result. Furthermore, the optical properties, including the dielectric function, absorption coefficient, optical reflectivity, refractive index and energy loss spectrum are calculated and analysed, showing that the TbMnO3 is a promising dielectric material.     

第一性原理研究Fe掺杂SnO2材料的光电性质

采用基于第一性原理的线性缀加平面波(FP-LAPW)方法,研究Fe掺杂SnO₂材料电子结构和光学性质,包括电子态密度、能带结构、介电函数和其他一些光学图谱. 研究结果表明,掺Fe后材料均属于直接跃迁半导体,且呈现半金属性;随掺杂浓度增加,费米能级进入价带,带隙逐渐减小,Fe原子之间耦合作用增强;通过掺杂能够在一定程度上改变成键性质,使其具有金属键性质. 光学谱线(吸收谱、消光系数等)与介电函数虚部谱线相对应,均发生蓝移,各峰值与电子跃迁吸收有关,从理论上指出光学性质和电子结构的内在联系. 关键词： 能带结构 态密度 光学性质 介电函数     

Electronic structure and optical properties of Sb2S3 crystal

The electronic and optical properties of Sb₂S₃ are studied using the full potential linearized augmented plane wave (FP-LAPW) method as implemented in Wien2k. In this approach, the alternative form of the generalized gradient approximation (GGA) proposed by Engel and Vosko (EV-GGA) was used for the exchange correlation potential. The calculated band structure shows a direct band gap. The contribution of different bands was analyzed from total and partial density of states curves. Moreover, the optical properties, including the dielectric function, absorption spectrum, refractive index, extinction coefficient, reflectivity and energy-loss spectrum are all obtained and analyzed in detail.     

Y掺杂SrTiO3晶体材料的电子结构计算

采用基于第一性原理的密度泛函理论平面波超软赝势法, 研究了Y掺杂SrTiO₃体系的空间结构和电子结构性质, 得到了优化后体系的结构参数, 掺杂形成能, 能带结构和电子态密度. 对比掺杂浓度为0125, 025, 033时,Sr_1-xY_xTiO₃和SrTi_1-xY_xO₃的掺杂形成能,发现Y替代Sr能形成更稳定的结构. 对Sr_1-xY_xTiO₃（x=0, 0125, 025, 033） 的结构进行了优化,结果表明Y替代Sr后, 随着掺杂浓度增大, 体系的晶格常数逐渐减小, 稳定性逐渐增强. 对不同掺杂浓度的Sr_1-xY_xTiO₃能带结构的计算结果表明：纯净的SrTiO₃是绝缘体, 价带顶在R点, 导带底在Γ点, 费米能级处于价带顶; 掺杂Y后, 费米能级进入到导带底中, 体系呈金属性;掺杂浓度越大,费米能级进入导带的位置越深,禁带宽度也近似变宽. 关键词： 3')" href="#">SrTiO₃ 电子结构 掺杂 VASP     

不同组分厚度比的LaMnO3/SrTiO3异质界面电子结构和磁性的第一性原理研究

基于密度泛函理论的第一性原理计算, 研究了(LaMnO₃)_n/(SrTiO₃)_m(LMO/STO)异质界面的离子弛豫、电子结构和磁性质. 研究表明, 不同组分厚度比及界面类型时, 离子弛豫程度各不相同, 并且界面处的电子性质受此影响较大. 对于n型界面, 当LMO的厚度达到6个单胞层后, 电子会从LMO转移到STO, 转移的电子占据界面层Ti原子的3d电子轨道, 界面处出现二维电子气. 对于n型界面(LMO)_n/(STO)₂, 随着LMO厚度数n的增加, 由离子弛豫造成的结构畸变减小, 而界面处Ti原子周围电子的态密度和自旋极化却增大, 表明高厚度比的n型界面有利于产生高迁移率的二维电子气和自旋极化. 而对于p型(LMO)₂/(STO)₈界面, 在STO一侧基本没有结构畸变, 界面处无电子转移和自旋极化现象. 通过计算平均静电势发现n型和p型界面处的势差大小相差2 eV, 解释了p型界面不容易发生电荷转移的原因.