Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction

The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.     

Structure transition and photoluminescence of CdS/Si nanoheterostructure array on thermal annealing

CdS/Si heterojunctions have been prepared through growing CdS nanocrystallites (nc-CdS) on the silicon nanoporous pillar array (Si-NPA) by the chemical bath deposition method. Cadmium nanocrystallites (nc-Cd) have been observed and ascribed to the reducibility of Si-NPA. The reason for the appearance of CdO is indistinct and the related work will be done in the future. The blue, green and red emissions are ascribed to the silicon oxide layer, band gap of nc-CdS and the sulphur vacancies, respectively. Redshift and blueshift with the annealing temperature about green emissions are contributed to quantum size effect and the structure transition from nc-Cd to CdO. It is beneficial for investigating the structures and defects to the application of CdS/Si in the optoelectronic field.     

氧化锌/硅纳米孔柱阵列的结构和光致发光特性研究

以硅纳米孔柱阵列(Si-NPA)为衬底、用化学气相沉积法制备了具有规则阵列结构特征的ZnO/Si-NPA纳米复合体系,并对其结构和光致发光性质进行了表征. 实验结果显示,组成ZnO/Si-NPA表面阵列的每个柱子均呈现层壳结构. 不同于衬底Si-NPA的红光和蓝光发射,ZnO/Si-NPA在紫外光区和蓝绿光区呈现出两个强的宽发光峰. 分析表明,紫外光发射应归因于ZnO晶体的带边激子跃迁;而蓝绿光发射则来自于ZnO晶体本征缺陷所形成的两类深能级复合中心上载流子的辐射跃迁.     

一种自支撑金纳米薄膜的制备、结构和氮吸附特性

以一种新的硅微米/纳米结构复合体系——硅纳米孔柱阵列作为还原性衬底,采用浸渍技术制备出一种自支撑的金纳米薄膜,并对其表面形貌和结构进行了表征.实验表明,金纳米薄膜的制备过程是一个自终止过程.当硅纳米孔柱阵列被耗尽后,浸渍溶液中Au³⁺的还原反应将自行终止;同时,所形成的金纳米薄膜自动与衬底脱离并成为一种自支撑薄膜.薄膜的形成机理被归因于硅纳米孔柱阵列所具有的高的表面活性和还原性.用能量弥散x射线谱对薄膜表面化学成分分析的结果表明,如此制备的金纳米薄膜具有很强的氮吸附和氮储存能力.这一特性有可能在气体传感器、空气分离和氮纯化以及氮化合物的膜合成器等技术领域得到应用.关键词：自支撑金纳米薄膜硅纳米孔柱阵列浸渍技术     

硅纳米孔柱阵列的结构和光学特性研究

采用水热腐蚀技术在单晶硅衬底上制备出一种新的硅微米／纳米结构复合体系——硅纳米孔柱阵列(Si-NPA),并对其表面形貌、结构及光学特性进行研究.Si-NPA的结构复合性体现为 在微米和纳米两个尺度上形成了三个分明的结构层次,即微米尺度的硅柱阵列结构、硅柱上 的纳米多孔结构以及组成孔壁的硅纳米晶粒.积分光反射谱和荧光光谱测试表明,Si-NPA具 有良好的光吸收和光致发光特性.依据Si－NPA积分反射谱的实验数据,采用Kramers-Kronig 变换关系计算得到了Si-NPA的复折射率和复介电函数、吸收系数等光学常数,并由此讨论了 Si-NPA相对于单晶硅的光学特性发生显著变化的原因.最后,通过分析Si-NPA的光吸收系数 与入射光子能量之间的关系,揭示出Si-NPA具有直接带隙半导体的电子结构特征,而且理论 计算得到的Si-NPA的带隙能与其光致发光谱的峰位能很好符合.关键词：硅纳米孔柱阵列光学特性电子结构水热腐蚀     

ZnO/ZnMgO异质结场效应管的制备与性能研究

利用等离子体增强化学气相沉积(PECVD)技术,在ZnO/ZnMgO异质结构上制备SiO2作为栅绝缘层,采用光刻与腐蚀工艺制备ZnO/ZnMgO异质结场效应管.电学性能测试及计算结果表明器件栅压调控作用明显.发现栅端漏电流对器件性能造成一定影响.在低温条件下,栅绝缘层产生钝化,从而能够改善器件的性能.     

Influence of growth time on field emission properties from carbon nanotubes deposited on arrayed nanoporous silicon pillars

We investigated the influence of growth time on field emission properties of multi-walled carbon nanotubes deposited on silicon nanoporous pillar array (MWCNTs/Si-NPA), which were fabricated by thermal chemical vapour deposition at 800 °C for 5, 15 and 25 min respectively, to better understand the origins of good field emission properties. The results showed that the MWCNTs/Si-NPA grown for 15 min had the highest field emission efficiency of the three types of samples. Morphologies of the products were examined by field-emission scanning electron microscope, and the excellent field emission performance was attributed not only to the formation of a nest array of multi-walled carbon nanotubes, which would largely reduce the electrostatic shielding among the emitters and resulted in a great enhancement factor, but also to the medium MWCNTs density films, there was an ideal compromise between the emitter density and the intertube distance, which also could effectively avoid electrostatic shielding effects, along with a high emitter density.     

Improved surface-enhanced Raman scattering of patterned gold nanoparticles deposited on silicon nanoporous pillar arrays

Large-area silicon nanoporous pillar arrays (Si-NPA) uniformly coated with gold nanoparticles was synthesized, and surface-enhanced Raman scattering of rhodamine 6G adsorbed on these gold nanoparticles were studied and compared. It's found that Au/Si-NPA substrate has a significantly high Raman signal sensitivity and good homogeneity. These are attributed to gold nanoparticles with narrow particle-size distribution uniformly coated on the surface and to the enlarged specific surface area for adsorption of target molecules brought by the porous silicon pillars.     

Growth process and mechanism of a multi-walled carbon nanotube nest deposited on a silicon nanoporous pillar array

A large scale nest array of multi-walled carbon nanotubes (NACNTs) was grown on silicon nanoporous pillar array (Si-NPA) by thermal chemical vapor deposition. Through observing its macro/micromorphology and structure, ascertaining the catalyst component and its locations at different growth time by hiring field emission scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and selected area electron diffraction, the growth process was deduced. Its thermal properties were also investigated by using a thermogravimetric analyzer. Our experiments demonstrated that the CNTs growth by means of root-growth mechanism at the initial growth stage, then a continuous growth process with its tip open is suggested, finally, a schematic growth model of NACNT/Si-NPA was presented.     

SERS activity of Au nanoparticles coated on an array of carbon nanotube nested into silicon nanoporous pillar

A novel composite structure, Au nanoparticles coated on a nest-shaped array of carbon nanotube nested into a silicon nanoporous pillar array (Au/NACNT/Si-NPA), was fabricated for surface-enhanced Raman scattering (SERS). The morphology of the Au/NACNT/Si-NPA composite structure was characterized with the aid of scanning electron microscopy, X-ray diffraction instrumentation and Transmission electron microscopy. Compared with SERS of rhodamine 6G (R6G) adsorbed on SERS-active Au substrate reported, the SERS signals of R6G adsorbed on these gold nanoparticles were obviously improved. This was attributed to the enlarged specific surface area for adsorption of target molecules brought by the nest-shaped CNTs structure.     

碳纳米管/硅纳米孔柱阵列的场发射性能

\"通过热化学气相沉积的方法将碳纳米管生长到硅纳米孔柱阵列衬底上．采用场发射扫描电子显微镜、透射电子显微镜、高分辨透射电子显微镜、拉曼光谱和X射线能谱对所制备的样品形貌、组成进行了分析．结果发现：所制备产物为一种具有面积大、准周期性的碳纳米管/硅巢状阵列复合结构．能谱分析表明碳纳米管仅含有碳元素．对样品进行场发射性能测试表明该结构开启电压为1.3 MV/m,当外加电压为4.26 MV/m,发射电流为5 mA/cm2．由FN公式计算相应的场增强因子约为1.1￡104．碳纳米管/硅纳米孔柱阵列好的场发射性能被归     

水热法制备In2O3/ZnO异质结及其高的光催化性能

采用简单的两步水热法合成了不同In₂O₃质量比的In₂O₃/ZnO异质结复合材料．通过X射线衍射仪(XRD)、紫外-可见分光光度计(UV-vis)和扫描电子显微镜(SEM)对复合材料的结构、形貌和性能进行了表征．同时还使用UV-vis分光光度计测试了异质结降解罗丹明B(RhB)的光催化活性．实验结果表明,与纯ZnO和In₂O₃相比,In₂O₃的引入将ZnO的吸收光谱扩展到可见光区域,从而提高了其光生电子和空穴的分离．此外,In₂O₃/ZnO异质结在可见光照射对RhB具有较高的光催化活性．5 wt%-In₂O₃/ZnO异质结对RhB的降解率为84.3%,且具有良好的光催化稳定性．In₂O₃/ZnO异质结复合材料在有机染料废水的降解中有更广阔的应用前景．     

利用同步辐射光电子能谱技术测量ZnO/PbTe异质结的能带带阶

异质结结构界面的能带带阶是一个非常重要的参数,该参数的精确确定直接影响异质结的光电性质研究以及异质结在光电器件上的应用.利用同步辐射光电子能谱技术测量了ZnO/PbTe异质结结构的能带带阶.测量得到该异质结价带带阶为2.56 eV,导带带阶为0.49 eV,是一个典型的类型I的能带排列.利用变厚度扫描的测量方法发现,ZnO/PbTe界面存在两种键,分别是Pb—O键(低结合能)和Pb—Te键(高结合能).在ZnO/PbTe异质结界面的能带排列中导带带阶较小,而价带带阶较大,这一能带结构有利于PbTe中的激发电子输运到ZnO导电层中.该类结构在新型太阳电池、中红外探测器、激光器等器件中具有潜在的应用价值.     

硅纳米孔柱阵列及其四氧化三铁复合薄膜的湿敏电容特性研究

报道了硅纳米孔柱阵列（Si-NPA）,Fe₃O₄复合的Si-NPA（Fe ₃O₄/Si-NPA）两种薄 膜材料的制备方法并对其形貌和结构进行了表征,研究了其电容湿度传感特性.结果表明,S i-NPA,Fe₃O₄/Si-NPA均为微米/纳米结构复合体系.当环境相对湿 度从11％上升到95％ 时,采用100 Hz的信号频率进行测试,以Si-NPA和Fe₃O₄/Si-NPA 为电介质材料制成的湿 敏元件的电容增加值分别为起始值的1500％和5500％;采用1000 Hz的信号频率测试时,则 分别为起始值的800％和12000％,显示出两种材料较高的湿度灵敏性和较强的绝对电容输出 信号强度.同时,在升湿和降湿过程中,Si-NPA,Fe₃O₄/Si-NPA都 具有较快的响应速度 ,其响应时间分别为15 s,5 s和20 s,15 s.文章结合材料的形貌和结构特性对其物理机理 进行了分析.上述结果表明,Si-NPA无论是直接作为湿度薄膜传感材料还是作为复合薄膜湿 度传感材料的衬底都具有很好的前景.关键词：硅纳米孔柱阵列3O₄')\" href=\"#\">Fe₃O₄湿度电容传感特性