Spectral Properties of Erbium—Doped Oxyfluoride Silicate Glasses for Broadband Optical Amplifiers

The new oxyfluoride silicate glasses of Er^3 -doped 50SiO2-(50-x) PbO-xPbF2 were prepared. With increasing PbF2 content in the glass composition, the fluorescence full width at half maximum and lifetimes of the ^4I13/2 level of Er^3 increase, while the refractive indices and densities decrease. Er^3 -doped 50SiO2-50PbF2 glass showed broad fluorescence spectra of 1.55μm with a large stimulated emission cross-section and long lifetimes of ^4I13/2 level of Er^3 . Compared with other glass hosts, the gain bandwidth properties of Er^3 -doped 50SiO2-50PbF2 glass are close to those of tellurite and bismuth glasses, and have advantages over those of silicate, phosphate and germante glasses. The broad and flat ^4I13/2→^4I15/2 emission of Er^3 around 1.55μm can be used as host material for potential broadband optical amplifier in wavelength-division-multiplexing network system.     

Composition Dependence of Spectroscopic Properties of Er^3＋ Doped TeO2-WO3-ZnO Glasses

Er^3 -doped TeO2-WO3-ZnO glasses were prepared and the absorption spectra, emission spectra and fluorescence lifetimes were measured. With more Te02 content in the glasses, the emission full width at half maximum (FWHM) increases while the lifetime of the ^4I13/2 level of Er^3 decreases. The stimulated emission cross-sectionof Er^3 calculated by the McCumber theory is as large as 0.86pm^2. The product of the FWHM and the emissioncross-section σe of Er^3 in TeO2-WO3-ZnO glass is larger than those in other glasses, which indicates that the glasses are promising candidates for Er^3 -doped broadband amplifiers. The Judd-Otfelt parameter Ω6 shows close composition dependence of the 1.5μm emission bandwidth. The more the TeO2 content is, the larger thevalues of Ω6 and FWHM.     

Green and red up-conversion emissions and thermometric application of Er^3＋-doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663 nm of wavelength, corresponding respectively to the ^2H11/2 → ^4I15/2, ^4S3/2 → ^4I15/2 and ^4F9/2 → ^4I15/2 transitions of Er^3＋ ions, have been observed for the Er^3＋-doped silicate glass excited by a 978 nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296-673 K, which shows that Er^3＋-doped silicate glass can be used as a sensor in high-temperature measurement.     

Structural and Luminescence Properties of Transparent Nanocrystalline ZrO2：Er^3＋ Films

The structural and luminescence properties of nanocrystalline ZrO2 ：Er^3＋ films are reported. Transparent nano-ZrO2 crystalline films doped with Er^3＋ have been prepared using a wet chemistry process. An intense roomtemperature emission at 1527nm with a full width at half-maximum of 46 nm has been observed, which is assigned to the ^4Ⅰ13/2 → ^4Ⅰ15/2 intra-4f^n electric transition of Er^3＋. Correlations between the luminescence properties and structures of the nanocrystalline ZrO2 ：Er^3＋ films have been investigated. Infrared-to-visible upconversion occurs simultaneously upon excitation of a commercially available 980-nm laser diode and the involved mechanisms have also been explained. The results indicate that the nanocrystalline ZrO2：Er^3＋ films might be suggested as promising materials for achieving broadband Er^3＋-doped waveguide amplifiers and upconversion waveguide lasers.     

Broadband 1.5-um emission of erbium-doped TeO_2-WO_3-Nb_2O_5 glass for potential WDM amplifier

Erbium-doped glass showing the wider 1.5-um emission band is reported in a novel oxide system TeO2-WO3-Nb2O5 and their thermal stability and optical properties such as absorption, emission spectra, cross-sections and fluorescence lifetime were investigated. Compared with other glass hosts, the gain bandwidth properties of Er3+ in TWN glass is close to that of bismuth glasses, and larger than those of tellurite, germanate, silicate and phosphate glasses. The broad and flat 4I13/2-4I15/2 emission and the large stimulated emission cross-section of Er3+ ions around 1.5um can be used as host material for potential broadband optical amplifier in the wavelength-division-multiplexing (WDM) network system.     

Effect of B2O3 on Judd—Ofelt parameters of Er^3＋—doped tellurite glasses

We have prepared Er^3 -doped borotellurite glasses using conventional melting and quenching method.The absorption spectrum analysis is performed on the basis of Judd-Ofelt theory.The effects of B2O3 on the spectroscopic parameters such as intersity parameters,line strengths of electric-dipole transitions,and sopontaneous emission probability are discussed.     

Preparation and spectral characterization of new Er3+-doped TeO2－B2O3－WO3－ZnO－ZnS glasses

Erbium-doped TeO_2-based oxysulfide glasses have been prepared in argon atmosphere in graphite crucibles. The results of thermal analysis and spectroscopic properties of Er^{3+} have been studied in terms of sulfide influence. As a function of composition, we have measured principally the optical absorption, spontaneous emission, and lifetime of the materials. Judd－Ofelt theory was introduced to calculate bandwidth and emission cross-section of Er^{3+}. The results demonstrate that addition of sulfide in tellurite glasses results in broad emission spectra, with high emission cross-section, slightly low emission lifetime and a comparatively high thermal stability as pure oxide glasses.     

Host dependent thermal stability and frequency upconversion of Er^3＋-doped heavy metal oxyfluoride germanate glasses

The upconversion properties of Er^3＋-doped heavy metal oxyfluoride germanate glasses under 975 nm excitation have been investigated. The intense green （551 and 529 nm） and relatively weak red （657 nm） emissions corresponding to the transitions ^4S3/2→^4I15/2, ^2H11/2→^4 I15/2 and ^4F9/2 →^4I15/2, respectively, were simultaneously observed at room temperature. The content of PbF2 has an important influence on the upconversion luminescence emission. With increasing content of PbF2, the intensities of green （529 nm） and red （657 nm） emissions increase slightly, while the green emission （551 nm） increases markedly. These results suggest that PbF2 has an influence on the green （551 nm） emission more than on the green （529 nm） and red （657 nm） emissions.     

Tm^3＋-doped Ga2O3-GeO2-Bi2O3-PbO（PbF2） Glasses for 1.47-μm Optical Amplifications

We report the spectroscopic properties and thermal stability of Tm^3＋-doped Ga2O3-GeO2-Bi2O3-PbO（PbF2） glasses for 1.47-μm optical amplifications. Effects of PbF2 doping on the optical properties and thermal stability of Tm^3＋ -doped gallate-germanium-bismuth-lead glass are inestigated. The measured peak wavelength and full width at half-maximum of the fluorescence are 1465nm and - 120 nm, respectively： Siguificant enhancement of the 1.47-μm emission and the lifetime of a a^3H4 level with increasing PbF2 doping have been observed. The presence of GeO2 provides two potentials of increasing the thermal stability and shortening the ultraviolet cutoff band of host glasses.     

Broadband 1.5-μm emission of erbium-doped TeO2-WO3-Nb2O5 glass for potential WDM amplifier

Erbium-doped glass showing the wider 1.5-/μm emission band is reported in a novel oxide system TeO2-WO3-Nb2O5 and their thermal stability and optical properties such as absorption,emission spectra,cross-sections and fluorescence lifetime were investigated.Compared with other glass hosts,the gain bandwidthproperties of Er3+ in TWN glass is close to that of bismuth glasses,and larger than those of tellurite,germanatc,silicate and phosphate glasses.The broad and flat 4I13/2 → 4I15/2 emission and the largestimulated emission cross-section of Er3+ ions around 1.5 μm can be used as host material for potentialbroadband optical amplifier in the wavelength-division-multiplexing(WDM)network system.     

Green and red up-conversion emissions and thermometric application of Er3+-doped silicate glass

The green and red up-conversion emissions centred at about 534, 549 and 663\,nm of wavelength, corresponding respectively to the ${^{2}}H_{11 / 2} \to {^{4}}I_{15 / 2}$, ${^{4}}S_{3 / 2} \to {^{4}}I_{15 / 2}$ and ${^{4}}F_{9 / 2} \to {^{4}}I_{15 / 2}$ transitions of Er$^{3 + }$ ions, have been observed for the Er$^{3 + }$-doped silicate glass excited by a 978\,nm semiconductor laser beam. Excitation power dependent behaviour of the up-conversion emission intensity indicates that a two-photon absorption up-conversion process is responsible for the green and red up-conversion emissions. The temperature dependence of the green up-conversion emissions is also studied in a temperature range of 296--673\,K, which shows that Er$^{3 + }$-doped silicate glass can be used as a sensor in high-temperature measurement.     

Judd-Oflet analysis of spectrum and laser performance of Ho：YAP crystal end-pumped by 1.91μm Tm：YLF laser

The Ho:YAP crystal is grown by the Czochralski technique.The room temperature polarized absorption spectra of Ho:YAP crystal was measured on a c cut sample with 1 at% holmium.According to the obtained Judd-Ofelt intensity parameters Ω2 = 1.42 × 10-20 cm2,Ω4 = 2.92 × 10-20 cm2,and Ω6 = 1.71 × 10-20 cm2,this paper calculated the fluorescence lifetime to be 6 ms for 5I7 →5 I8 transition,and the integrated emission cross section to be 2.24×10-18 cm2.It investigates the room temperature Ho:YAP laser end pumped by a 1.91 μm Tm:YLF laser.The maximum output power was 4.1 W when the incident 1.91 μm pump power was 14.4 W.The slope efficiency is 40.8%,corresponding to an optical to optical conversion efficiency of 28.4%.The Ho:YAP output wavelength was centred at 2118 nm with full width at half maximum of about 0.8 nm.     

High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated, and irradiated with 1~MeV electrons up to a dose of 3.43× 10¹⁴~e/cm^-2. After radiation, the forward currents of the SBDs at 2~V decreased by about 50%, and the reverse currents at -200~V increased by less than 30%. Schottky barrier height (φ _B ) of the Ni/4H-SiC SBD increased from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased from 1.25~eV to 1.19~eV under -30~V irradiation bias. The degradation of φ _B could be explained by the variation of interface states of Schottky contacts. The on-state resistance (R_s) and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance (\rho_c) of the Ni/SiC Ohmic contact increased from 5.11× 10⁵~Ωega.cm² to 2.97× 10^-4~Ωega.cm².     

Judd--Ofelt analysis of spectra and experimental evaluation of laser performance of Tm3+ doped Lu2SiO5 crystal

This paper reports that the Tm^3＋：Lu2SiO5 （Tm：LSO） crystal is grown by Czochralski technique. The roomtemperature absorption spectra of Tm：LSO crystal are measured on a b-cut sample with 4 at.% thulium. According to the obtained Judd-Ofelt intensity parameters Ω2=9.3155×10^-20 cm^2, Ω4=8.4103×10^-20 cm^2, Ω6=1.5908×10^-20 cm^2, the fluorescence lifetime is calculated to be 2.03 ms for ^3F4 → ^3H6 transition, and the integrated emission cross section is 5.81×10^-18 cm^2. Room-temperature laser action near 2μm under diode pumping is experimentally evaluated in Tm：LSO. An optical-optical conversion efficiency of 9.1% and a slope efficiency of 16.2% are obtained with continuouswave maximum output power of 0.67 W. The emission wavelengths of Tm：LSO laser are centred around 2.06μm with spectral bandwidth of -13.6 nm.     

Optical parameters and energy levels splitting of Ho^3＋ in Ho^3＋： GdVO4

Ho^3＋ ： GdVO4 is a new laser material suitable for high-power laser systems. In this paper we measure the absorption spectra of Ho^3＋ in the sample Ho^3＋： GdVO4. The intensity parameters are calculated by using the Judd-Ofelt theory. Some predicted spectroscopic parameters, such as the spontaneous radiative transition rate, branching ratio and integrated emission cross section are dealt with. And we also compare the optical parameters with those of other materials. From these results, it is found that there are many transitions which have large oscillator strengths and large integrated emission cross sections. Especially the transitions such as ^5 F4 → ^5 I 8, ^5 S2→^5 I8, ^5 F5 → ^5 I8 and ^5 I7 →^ 5 I8 are useful in solid-state lasers and other fields. Finally, we discuss the splitting of the energy levels of Ho^3＋ in the crystal GdVO4 based on the group theory.     

Theoretical calculation of the quadratic Zeeman shift coefficient of the 3P0o clock state for strontium optical lattice clock

In the weak-magnetic-field approximation, we derived an expression of quadratic Zeeman shift coefficient of $^3P^{\rm o}_0$ clock state for $^{88}$Sr and $^{87}$Sr atoms. By using this formula and the multi-configuration Dirac-Hartree-Fock theory, the quadratic Zeeman shift coefficients were calculated. The calculated values $C_2$ = $-23.38(5)$ MHz/T$^2$ for $^{88}$Sr and the $^3P^{\rm o}_0$, $F = 9/2$, $M_F = \pm9/2$ clock states for $^{87}$Sr agree well with the other available theoretical and experimental values, especially the most accurate measurement recently. In addition, the calculated values of the $^3P^{\rm o}_0$, $F = 9/2$, $M_F = \pm9/2$ clock states were also determined in our $^{87}$Sr optical lattice clock. The consistency with measurements verifies the validation of our calculation model. Our theory is also useful to evaluate the second-order Zeeman shift of the clock transition, for example, the new proposed $^1S_0$, $F = 9/2$, $M_F = \pm5/2$-${}^3P^{\rm o}_0$, $F = 9/2$, $M_F = \pm3/2$ transitions.     

The splitting of low-lying states for hydroxyl molecule under spin--orbit coupling

The splitting of potential energy curves for the states $X^{2}\Pi _{3/2}$, $^{2}\Pi _{1/2}$ and $A^{2}\Sigma ^{ +}$ of hydroxyl OH under spin--orbit coupling (SOC) has been calculated by using the SO multi-configuration quasi-degenerate perturbation theory (SO-MCQDPT). Their Murrell--Sorbie (M--S) potential functions have been derived, then, the spectroscopic constants for $X^{2}\Pi _{3/2}$,$^{ 2}\Pi _{1/2}$ and $A^{2}\Sigma ^{ + }$ have been derived from the M--S function. The calculated dissociation energies for the three states are $D_{0}$[OH($X^{2}\Pi _{3/2})$]=34966.632cm$^{-1}$, $D_{0}$[OH($^{2}\Pi _{1/2})$]=34922.802cm$^{-1}$, and $D_{0}$[OH($A^{2}\Sigma ^{ + })$]=17469.794cm$^{-1}$, respectively. The vertical excitation energy $\nu [ {{ }^2\Pi _{1/2} ( {\nu = 0} ) \to {X}{ }^2\Pi _{3/2} ( {\nu = 0} )} ] = 139.6{\rm cm}^{-{\rm 1}}$. All the spectroscopic data for the $X^{2}\Pi _{3/2}$ and $^{2}\Pi _{1/2 }$ are given for the first time except the dissociation energy of $X^{2}\Pi _{3/2}$.     

Spin polarization effect for Os2 molecule

Density functional Theory （DFT） （B3p86） of Gaussian03 has been used to optimize the structure of Os2 molecule. The result shows that the ground state for Os2 molecule is 9-multiple state and its electronic configuration is ^9∑^＋g, which shows spin polarization effect of Os2 molecule of transition metal elements for the first time. Meanwhile, we have not found any spin pollution because the wavefunction of the ground state does not mingle with wavefunctions with higher energy states. So, the fact that the ground state for Os2 molecule is a 9-multiple state is indicative of spin polarization effect of Os2 molecule of transition metal elements. That is, there exist 8 parallel spin electrons. The non-conjugated electron is greatest in number. These electrons occupy different spacious tracks, so that the energy of Os2 molecule is minimized. It can be concluded that the effect of parallel spin of Os2 molecule is larger than the effect of the conjugated molecule, which is obviously related to the effect of electron d delocalization. In addition, the Murrell-Sorbie potential functions with the parameters for the ground state ^9∑^＋g and other states of Os2 molecule are derived. Dissociation energy De for the ground state of Os2 molecule is 3.3971eV, equilibrium bond length Re is 0.2403nm, vibration frequency ωe is 235.32cm^-1. Its force constants f2, f3, and f4 are 3.1032×10^2aJ·nm^-2, -14.3425×10^3aJ·nm^-3 and 50.5792×10^4aJ·nm^-4 respectively. The other spectroscopic data for the ground state of Os2 molecule ωexe, Be and ae are 0.4277cm^- 1, 0.0307cm^- 1 and 0.6491 × 10^-4cm^-1 respectively.     

Copper ion beam emission in solid electrolyte Rb4Cu16I6.5Cl13.5

Copper ion conducting solid electrolyte Rb$_{4}$Cu$_{16}$I$_{6.5}$Cl$_{13.5 }$ was prepared by means of mechano-chemical method. The structure and morphology of the powder was investigated by x-ray diffraction and scanning electron microscopy. The grain size was estimated to be 0.2-0.9 μm and the ionic conductivity at room temperature was approximately 0.206 S/cm. The solid electrolyte Rb$_{4}$Cu$_{16}$I$_{6.5}$Cl$_{13.5 }$ was exploited for copper ion beam generation. The copper ion emission current of several nA was successfully obtained at acceleration voltages of 15 kV and temperature of 197 $^\circ$C in vacuum of 2.1$\times10^{-4}$ Pa. A good linear correlation between the logarithmic ion current $(\log I)$ and the square root of the acceleration voltage ($U_{\rm acc}$) at high voltage range was obtained, suggesting the Schottky emission mechanism in the process of copper ion beam generation.