共查询到20条相似文献,搜索用时 15 毫秒
1.
用等离子体辅助分子束外延的方法生长了n-ZnO/i-MgO/p-GaN异质结发光二极管。I-V测量表明其具有典型的二极管整流特性。电致发光峰位于382nm,通过与n型ZnO和p型GaN的光致发光谱比较,其发光峰位与线形都与ZnO的自由激子发射一致,表明该电致发光来自于ZnO的自由激子发射。通过Anderson模型比较了n-ZnO/i-MgO/p-GaN和n-ZnO/p-GaN异质结的能带示意图,证明了由于MgO层的插入抑制了ZnO向GaN层中的电子注入,且有利于空穴向ZnO层注入,从而实现了ZnO层中的电注入发光。 相似文献
2.
《Current Applied Physics》2014,14(3):345-348
High quality n-ZnO/p-GaN heterojunction was fabricated by growing highly crystalline ZnO epitaxial films on commercial p-type GaN substrates via radio frequency (RF) magnetron sputtering. Low-voltage blue light emitting diode with a turn-on voltage of ∼2.5 V from the n-ZnO/p-GaN heterojunction was demonstrated. The diode gives a bright blue light emission located at ∼460 nm and a low threshold voltage of 2.7 V for emission. Based on the results of the photoluminescence (PL) and electroluminescence (EL) spectra, the origins of the EL emissions were studied in the light of energy band diagrams of ZnO–GaN heterojunction, and may attribute to the radiative recombination of the holes in p-GaN and the electrons injected from n-ZnO, which almost happened on the side of p-GaN layer. These results may have important implications for developing short wavelength optoelectronic devices. 相似文献
3.
Zhifeng Shi Xiaochuan Xia Hui Wang Xin Dong Baolin Zhang 《Journal of luminescence》2011,131(8):1645-1648
ZnO-based heterojunction light emitting diodes (LEDs) with MgZnO barrier layer had been fabricated on the p-Si substrate by metal-organic chemical vapor deposition (MOCVD) technology. The current-voltage (I-V) characteristics exhibited a typical p-n diode behavior. Both ultraviolet (UV) and visible emissions could be detected in the electroluminescence (EL) measurement. The result was compared with the EL spectrum of n-ZnO/p-Si heterojunction LED without MgZnO barrier layer. An improved light extraction efficiency by about 31% was realized owing to the current-blocking effect of MgZnO layer. The result indicated that MgZnO barrier layer can prevent the electrons as expected and realize electron-hole recombination in ZnO layer effectively. 相似文献
4.
Atomic fluorescence mapping of optical field intensity profiles issuing from nanostructured slits, milled into subwavelength metallic layers 总被引:1,自引:0,他引:1
G. Gay B. Viaris de Lesegno R. Mathevet J. Weiner H.J. Lezec T.W. Ebbesen 《Applied physics. B, Lasers and optics》2005,81(7):871-874
In this work, we report on the fabrication and characteristics of light-emitting diodes based on p-GaN/i-ZnO/n-ZnO heterojunction. A 30 nm i-ZnO layer was grown on p-GaN by rf reactive magnetron sputtering, then a n-ZnO was deposited by the electron beam evaporation technique. The current-voltage characteristic of the obtained p-i-n heterojunction exhibited a diode-like rectifying behavior. Because the electrons from n-ZnO and the holes from p-GaN could be injected into a i-ZnO layer with a relatively low carrier concentration and mobility, the radiative recombination was mainly confined in i-ZnO region. As a result, an ultraviolet electro-emission at 3.21 eV, related to ZnO exciton recombination, was observed in a room-temperature electroluminescence spectrum of p-i-n heterojunction under forward bias. 相似文献
5.
6.
Improvement in electroluminescence performance of n-ZnO/Ga_2O_3 /p-GaN heterojunction light-emitting diodes 下载免费PDF全文
n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence (EL) spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier (ΔEC=1.85 eV) at n-ZnO/Ga2O3 interface and the much smaller hole barrier (ΔEV=0.20 eV) at Ga2O3/p-GaN interface. 相似文献
7.
The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance 下载免费PDF全文
ZnO micro-prisms are prepared on the p-type and n-type Si substrates,
separately. The $I$--$V$ curves analysed by AFM show that the interface junctions
between the ZnO micro-prisms and the p-type substrate and between the ZnO
micro-prisms and the n-type Si substrate exhibit p--n junction behaviour and
ohmic contact behaviour, respectively. The formation of the p--n
heterojunction and ohmic contact is ascribed to the intrinsic n-type
conduction of ZnO material. Better field emission performance (lower onset
voltage and larger emission current) is observed from an individual ZnO
micro-prism grown on the n-type Si substrate. It is suggested that the
n-Si/n-ZnO interfacial ohmic contact benefits the electron emission; while
the p-Si/n-ZnO interface heterojunction deteriorates the electron emission. 相似文献
8.
You-Wei Wang Jian-Ping Xu Hao Wang Shu-Bin Li Qing-Liang Shi Yuan Hong Li-Fang Jiang Hu-Chen Yuan Lan Li 《Applied Physics A: Materials Science & Processing》2014,116(4):1921-1925
In this paper, we fabricated a p-PVK/n-ZnO nanorods (NRs)/p-MEH-PPV dual heterojunctions white light-emitting diode. Relative to previously reported p–n heterojunction structure including ZnO NRs and polymer, the device exhibits a low turn-on voltage of 7 V. An obviously broad electroluminescence emission band, originated from the overlap of PVK emission and ZnO defects emissions, was observed extending from 360 up to 700 nm. The influence of the two introduced p-type polymer layers on the device characteristic is discussed. With its hole conductivity, the p-PVK layer cannot only improve the holes tunnel into ZnO NRs layer, but also lower the barrier between ITO and the valance band of ZnO NRs. On the other hand, p-MEH-PPV could be regarded as block layer for the injection of electrons from the Al electrode. Both of two p-type polymers dramatically improve the injection balance of carriers, leading to a low turn-on voltage. Meanwhile, the carrier transport mechanism of the device under different forward bias region was discussed on the basis of current–voltage curve. 相似文献
9.
We have demonstrated a direct-current piezoelectric nanogenerator with a novel structure of p-Si/n-ZnO heterojunction. Low resistance p-type silicon chip, with a large number of nano-concaves on the surface, was utilized as a top electrode over the n-type ZnO nanorod arrays, forming a heterojunction nanogenerator. Piezoelectric current, with average singles about 1 nA, was generated from the heterojunction nanogenerator. Rectifying behavior of the p-Si/n-ZnO heterojunction in our piezoelectric nanogenerator was analyzed from the I–V curve and the energy band structure. Furthermore, output tests of reverse connection and two devices parallel connection clearly eliminate the effects from measurement system errors and confirms that the current is generated from the nanogenerator. Our research presents an approach to integrating a new type of nanogenerator using the silicon chip directly, without expensive Pt or Au coated on the electrode surfaces. 相似文献
10.
《Current Applied Physics》2014,14(3):223-226
Negative photoconductivity (NPC) was observed in n-ZnO/p-Si heterojunction diode grown by ultra-high vacuum sputtering method under nitrogen ambient. Under the illumination of ultra-violet light, positive photoconductivity was observed at low bias voltages, whereas NPC was observed at high bias voltages. The defect states in the ZnO layers grown on Si were analyzed by photoluminescence and deep level transient spectroscopy measurements. Two deep levels were measured at Ec-0.51 eV and Ec-0.54 eV, which might be originated from oxygen vacancy and nitrogen atom related defects, respectively. Based on the simulation of band diagram, the defect states were located below Fermi level at zero bias voltage. However, as increasing the bias voltages, NPC was observed due to the increase of empty defect states. This analysis allowed us to consider the possibility that the NPC phenomenon in n-ZnO/p-Si heterojunction diode is originated dominantly from the defect states as a carrier recombination center in ZnO layer. 相似文献
11.
S. Iwan S. Bambang J.L. Zhao S.T. Tan H.M. Fan L. Sun S. Zhang H.H. Ryu X.W. Sun 《Physica B: Condensed Matter》2012,407(14):2721-2724
Erbium-doped ZnO (ZnO:Er) thin films with various doping concentrations were deposited on p-Si substrates by ultrasonic spray pyrolysis (USP). The n-ZnO:Er/p-Si heterojunctions were further employed to fabricate light-emitting diodes (LEDs). The devices showed diode-like rectifying current–voltage characteristics with a low reverse breakdown voltage, attributed to the avalanche breakdown. A distinct green electroluminescence peaking at 537 nm and 558 nm were observed at room temperature under reverse bias. The green electroluminescence originated from the electron impact excitation of Er3+ ions doped in ZnO films. 相似文献
12.
Growth and optical properties of quadrangular zinc oxide nanorods on copper-filled porous silicon 总被引:1,自引:0,他引:1
Zinc oxide (ZnO) nanorods with quadrangular morphology have been successfully prepared on a copper-filled porous silicon substrate using a vapor phase transport method. Scanning electron microscopy showed that the diameters of the nanorods were scattered in a range of 100–400 nm and the lengths up to 2 m. High-resolution transmission electron microscopy and a selected-area electron-diffraction pattern confirmed that the quadrangular ZnO nanorods had a single-crystal wurtzite structure and grew along the (0001) direction. The photoluminescence spectrum under excitation at 325 nm showed an ultraviolet emission at 386 nm and a strong broad green emission at 518 nm at room temperature. PACS 81.05.Dz; 81.05.Rm; 81.07.Bc 相似文献
13.
14.
Electroluminescent characteristics of n-ZnO/p-GaN heterojunctions under forward and reverse biases are studied. Emissions at 389nm and 57Ohm are observed under forward bias. An unusual emission at 390ram appears under reverse bias, and is attributed to the recombination in the p-GaN side of the heterojunction. The yellow emission peaked at 57Ohm is suppressed under reverse bias. The light intensity exponentially depends on the reverse current. The emission under reverse bias is correlated to tunnelling carrier transport in the heterostructure. Our results also support that the well-known yellow band of GaN comes from the transitions between some near-conduction-band-edge states and deep localized acceptor states. 相似文献
15.
N. Boukos C. Chandrinou K. Giannakopoulos G. Pistolis A. Travlos 《Applied Physics A: Materials Science & Processing》2007,88(1):35-39
ZnO nanorods were grown by a near-room-temperature, simple, chemical solution method on large-area Zn foils and substrate
materials such as silicon, and zinc oxide thin films on silicon and glass. Study of the ZnO nanorods on the different substrates
by electron microscopy methods shows that the morphology and size of the ZnO nanorods can be tuned varying the growth parameters
and the substrates used. The growth mechanism is briefly discussed. Photoluminescence experiments at room temperature reveal
a major emission peak of the nanorods at around 385 nm, which is attributed to the band edge transition of ZnO and weaker
defect-related visible band peaks.
PACS 81.05.Dz; 78.55.Et; 81.07.-b 相似文献
16.
An n-ZnO:A1/p-boron-doped diamond heterostructure electroluminescent device is produced, and a rectifying be- havior can be observed. The electroluminescence spectrum at room temperature exhibits two visible bands centred at 450 nm-485 nm (blue emission) and 570 nm-640 nm (yellow emission). Light emission with a luminance of 15 cd/m2 is observed from the electroluminescent device at a forward applied voltage of 85 V, which is distinguished from white light by the naked eye. 相似文献
17.
18.
19.
20.
M. Sajimol Augustine P.P. Jeeju V.G. Sreevalsa S. Jayalekshmi 《Journal of Physics and Chemistry of Solids》2012,73(3):396-401
The aim of the study is to investigate the optical properties of spin-coated, highly transparent nanocomposite films of oleic acid modified ZnO (Zinc oxide) nanorods embedded in Polyvinyl alcohol (PVA) matrix. Pristine and oleic acid (OA) modified ZnO nanorods have been prepared by wet chemical synthesis and are characterized by X-ray diffraction, FESEM, TEM and FT–IR spectroscopy techniques. The optical properties of ZnO/PVA films are studied using UV–visible absorption and Photoluminescence (PL) spectroscopy. The results show that the optical absorption of the films in the UV region is quite high and more than 95% absorption is observed in films prepared from OA modified ZnO nanorods. The excellent UV absorption at around 300 nm offers prospects of applications of these films as efficient UV filters in this wavelength region. The PL spectrum of pristine ZnO nanorods shows almost white light emission whereas OA modified ZnO nanorods have a more intense peak centered in the blue region. The PL emission of OA modified ZnO/PVA film shows appreciable increase in intensity compared to the film obtained with pristine ZnO. The surface modification of ZnO by the polymer matrix removes defect states within ZnO and facilitates sharp near band edge PL emission at 364 nm. 相似文献