指数掺杂反射式GaAlAs和GaAs光电阴极比较研究

采用指数掺杂技术, 通过金属有机化学气相沉积法外延生长了反射式GaAlAs和GaAs光电阴极, GaAlAs发射层的Al组分设计为0.63. 在超高真空系统中分别对两种阴极进行激活实验, 得到激活后的光谱响应曲线. 利用指数掺杂反射式光电阴极量子效率公式对实验曲线进行拟合并分析了电子漂移扩散长度、后界面复合速率、表面电子逸出几率等性能参数对光电发射性能的影响. 结果表明, 与GaAs光电阴极相比, GaAlAs光电阴极的Al组分虽然在一定程度上不利于光电发射, 但是解决了GaAs光电阴极由于响应波段宽而不能很好地用于窄波段可见光探测领域的问题, 制备出只对蓝绿光响应的反射式GaAlAs光电阴极.     

超高真空系统中GaAlAs光电阴极的重新铯化研究

为了探索在超高真空系统中使用稳定性和重复性好的光电阴极,开展了金属有机化学气相沉积生长的反射式GaAlAs和GaAs光电阴极的激活实验和重新铯化实验,测试了Cs/O激活后和重新补Cs后的光谱响应曲线和光电流衰减曲线.实验结果表明,在100 lx白光照射条件下,超高真空环境中的GaAlAs光电阴极在Cs/O激活后和重新补Cs激活后的光电流衰减寿命相比GaAs光电阴极更长,并且在多次补Cs激活后呈现较一致的蓝绿光响应能力和光电流衰减寿命,体现了GaAlAs光电阴极在真空系统中稳定性和可重复性使用方面具有的优越性,为海洋真空探测器件和真空电子源领域的研究提供了实验指导.     

透射式GaAs光电阴极AlGaAs窗层和GaAs光电发射层界面应变状况的X射线衍射研究

本文介绍了应变和弛豫的概念以及倒易点在倒易空间的分布,阐明了GaAs光电阴极AlGaAs窗层和GaAs光电发射层界面应变状况的X射线衍射的分析方法,最后给出了实例.     

透射式GaAs光电阴极AlGaAs/GaAs外延层X射线衍射摇摆曲线研究

利用透射式GaAs光电阴极AlGaAs/GaAs外延层的结构特点及其X射线衍射摇摆曲线分析方法,解释了AlGaAs/GaAs外延层摇摆曲线半峰宽和其衍射角角位移随外延层生长温度升高而增大的现象.     

透射式变掺杂GaAs光电阴极研究

为了将变掺杂GaAs材料应用于微光像增强器,开展了透射式变掺杂GaAs光电阴极实验研究,制备了2种反转结构透射式变掺杂GaAs光电阴极。测试了玻璃粘接前后GaAs光电阴极载流子浓度变化,发现高温粘接后载流子浓度增加现象。通过测试高温激活的透射式变掺杂GaAs光电阴极发现,在450 nm～550 nm波段内,变掺杂GaAs光电阴极仍然具有较高的光谱响应。     

微光像增强器光阴极灵敏度理论极限问题研究

光阴极灵敏度(量子效率)是微光像增强器最重要和最基本的性能参数之一,它决定着微光成像系统在低照度下的视距和图像清晰度。根据半导体光电发射物理模型及普朗克黑体辐射理论,简介了光电发射5个环节（光子不完全吸收、GaAlAs/GaAs后界面、GaAs光阴极激活层体特性缺陷、GaAs光阴极表面位垒和GaAs光阴极-MCP之间近贴电场电子隧道效应）对光阴极量子效率的影响,给出了相关数学表达式。在假定5个环节子量子效率均为100%的前提下,估算出蓝延伸GaAs光阴极在（0.41～0.93）μm波段内的极限积分灵敏度,其值为6569μA/lm。文末,对此结果的意义给予评价。     

透射式GaAs光电阴极AlGaAs/GaAs外延层在热应力作用下晶格弯曲的倒易点二维图研究

本文介绍了倒易点及其倒易点二维图的概念、倒易点形状及其倒易点二维图同晶格形变的关系,推导了热应力作用下双层膜发生弯曲的理论公式,阐明了晶格弯曲的原因和晶格倒易点二维图展宽的方向,分析了GaAs光电阴极AlGaAs/GaAs外延层的实测倒易点二维图,最后提出了降低AlGaAs/GaAs外延层中的热应力的技术途径.     

透射式GaAs光电阴极AlGaAs/GaAs外延层倒易点二维图分析

本文介绍了摇摆曲线和倒易点二维图在评价晶格完整性时的特点,分析了透射式GaAs光电阴极样品AlGaAs/GaAs外延层的倒易点二维图,获得了晶面弯曲以及AlGaAs外延层中Al组份变化等方面的信息,为优化外延工艺提供了可靠的保证.     

发射层厚度对透射式GaAs光电阴极表面光电压谱的影响

通过求解一维稳态少子扩散方程,推导了含有后界面复合速率和发射层厚度的透射式GaAs光电阴极表面光电压谱理论方程.通过对发射层厚度分别为1.6 μm和2.0 μm,掺杂浓度为1×1019 cm－3的GaAs透射式阴极样品测试,理论曲线和实验曲线基本一致.通过引入表面光电压谱积分灵敏度公式,仿真探讨了表面光电压谱在一定体材料参量条件下,积分灵敏度受发射层厚度的影响|发现在体材料参量一定条件下,透射式GaAs光电阴极具有最佳厚度,同时最佳厚度受后界面复合速率的影响更大,同时GaAlAs窗口层也能很好降低发射层后界面复合速率.     

利用梯度掺杂获得高量子效率的GaAs光电阴极

获得高量子效率且稳定性良好的阴极一直是近年来发展GaAs光电阴极的重要方向。对晶面为(100),掺杂Be,厚度为1μm分子束外延生长的反射式GaAs发射层,设计了一种从体内到表面掺杂浓度由高到低分布的新型梯度掺杂结构。掺杂浓度的范围从1×1019cm-3到1×1018cm-3,并利用(Cs,O)激活技术制备了GaAs光电阴极。光谱响应测试曲线显示,与传统均匀掺杂的GaAs光电阴极相比,梯度掺杂的GaAs光电阴极的量子效率在整个波段都有提高,积分灵敏度可达1580μA/lm,且具有更好的稳定性。讨论了这种新型GaAs光电阴极获得更高量子效率的内在机理。该设计结构是现实可行的,且具有很大发展潜力,它为国内发展高性能GaAs光电阴极提供了一条重要途径。     

Multicrystal X-ray diffraction of heteroepitaxial structures

An appraisal of high-resolution multi-crystal multi-reflection diffractometry (HRMCMRD) and topography is presented to illustrate its potential for structure analysis. Examples of methods for extracting lateral interface roughness, studying layered structures with imperfect epitaxy (including strained layer structures) are given to show the wealth of information available from X-ray techniques. The advantages of diffraction space mapping are discussed in addition to the use of topography to interpret the diffuse and Bragg scattering. The HRMCMRD has a dynamic range of 10⁶ and can record topographs with intensities less than 1 count/s.     

约化胞与电子衍射谱的标定

对应于14种布喇菲点阵有44种约化胞,不但约化矢的选法是唯一的,而且可以根据约化矢标量积矩阵(a·a b·b c·c b·c c·a a·b)的不同形式,确定布喇菲点阵类型。在晶体点阵已知的情况下,从点阵参数计算出倒易点阵中的平面约化胞,并与试验得到的电子衍射谱对比以标定衍射斑点的指数。在晶体点阵未知的情况下,从已知转角的两个电子衍射谱中选三个接近中心的衍射斑点,相当于三个低指数倒易矢量。由它们构成倒易点阵的一个初基胞,变换成正点阵的初基胞后,经过约化得出约化胞和相应的布喇菲单胞的类型和参数,同时标定衍射斑点的指数。这些标定计算已编成电子计算机程序,可以用来直接确定晶体点阵类型和进行物相分析。     

Effects of applied DC/AC fields in electrical fixing process with SBN:60

We present experimental investigations of electrical fixing techniques in Ce:SBN:60. The effect of crystal fatigue on the diffraction efficiency of electrically fixed photorefractive gratings is studied. We observed that applying an ac field to the crystal eliminated crystal fatigue and improved diffraction efficiency. A controllable diffraction efficiency of a photorefractive grating is presented. A reproducible diffraction efficiency of up to 75% is obtained using a write-reveal grating technique with high-voltage pulses of opposite polarity. We also show that the diffraction efficiency can be controlled by varying the intensity of the writing beams incident to the crystal during the recording process. A method of determining the hysteresis loop using the domain-fixing technique is proposed. The dependence of the diffraction efficiency on the direction of the applied electric field while writing the hologram is studied. Our experiments show that, during writing, when the electric field is applied opposite to the c axis the grating can be successfully revealed with both positive and negative dc voltages. However, when the grating is written with a field parallel to the c axis, the grating can be revealed only with a field applied in the opposite direction. Received: 28 October 2002 / Revised version: 28 February 2003 / Published online: 14 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-812/872-6167, E-mail: azad.siahmakoun@rose-hulman.edu     

Synthesis and photoelectric characterization of semiconductor CdSe microrod array by a simple electrochemical synthesis method

It is reported here that the microrod array of CdSe on indium doped tin oxide coated conducting glass (ITO) substrate has been developed by a simple electrochemical synthesis method. The electrodeposition of CdSe was also investigated by cyclic voltammetric technique. The sample was characterized by XRD, EDX, FESEM and UV-vis spectroscopic. The X-ray diffraction investigation demonstrates that the CdSe microrod is a uniform hexagonal CdSe crystal. EDX shows that the high purity CdSe is obtained. Field emission scanning electron microscope (FESEM) results show that the microrods’ length, diameter, and direction of growth are nearly uniform and perpendicular to the ITO substrate. UV-vis absorption spectrum study shows the presence of direct transition with the band gap energy 2.13 eV. Photoelectrochemical solar cells are constructed using CdSe microrod array as the photocathode in polysulphide electrolyte and their power output characteristics are studied.     

1.25μm近红外场助光阴极材料InGaAsP/InP的液相外延

本文简要阐述了近红外场助光阴极的原理及对外延材料的要求。利用液相外延工艺并采用独特的掺杂技术生长出了用于近红外光电阴极的InP/InGaAsP 异质结结构。显微分析。x射线双晶衍射、电子探针、电化学C-V等测试结果表明外延层的结晶质量及电学性能符合设计的特殊要求,在此基础上制作的场助光电阴极量子效率在1.20μm处为3.5×10^-4,其响应波长可达1.25μm。     

ZnTe/GaSb结构的X射线三轴晶散射和晶体截断杆研究

用X射线三轴晶散射和晶体截断杆扫描研究了不同工艺条件下分子束外延生长的ZnTe/GaSb结构．X射线晶体截断扫描显示，从衬底表面清洁温度到生长温度退火过程中采用Zn气氛的样品具有清晰的干涉条纹，而在Te气氛下退火则晶体截断扫描没有干涉条纹．在倒易点004，115附近X射线散射的二维强度分布图显示，两种条件下生长样品的晶格失配应力都没有弛豫．二维等强度分布图和沿［110］方向的扫描，都显示在Te气氛下生长的膜具有较强的漫散射，并且分布较宽．这种漫散射来源于界面相Ga₂Te_{3< 关键词：}     

1.25μm近红外场助光阴极材料InGaAsP/InP的液相外延

本文简要阐述了近红外场助光阴极的原理及对外延材料的要求。利用液相外延工艺并采用独特的掺杂技术生长出了用于近红外光电阴极的InP/InGaAsP 异质结结构。显微分析。x射线双晶衍射、电子探针、电化学C-V等测试结果表明外延层的结晶质量及电学性能符合设计的特殊要求,在此基础上制作的场助光电阴极量子效率在1.20μm处为3.5×10~(-4),其响应波长可达1.25μm。     

Enhanced Čerenkov second-harmonic emission in nonlinear photonic structures

We study experimentally and theoretically the ?erenkov-type second-harmonic generation in a one-dimensional nonlinear photonic crystal. We demonstrate that the power of emitted second-harmonic can be enhanced 270 times by varying the angle of incidence of the fundamental beam such that the reciprocal lattice vector of the crystal can be used to compensate for the phase mismatch in the transverse direction enabling interaction in the nonlinear Bragg diffraction regime.     

Anomalous diffraction effects observed on the x-ray diffraction patterns of decomposing supersaturated solid solutions

The basic purpose of an x-ray study of the initial stage of the decomposition of a supersaturated solid solution is to determine the shape, size, and relative orientation of the anomalous-scattering regions in the reciprocal lattice (in reciprocal space) from the anomalous diffraction effects observed on the diffraction patterns. From the size, shape, and relative orientation of the various anomalous-scattering regions in reciprocal space one can draw quite reliable conclusions regarding the nature of the same distortions in the matrix lattice, due to the observed anomalous diffraction effects. An analytic method is proposed for calculating the anomalous-scattering regions in reciprocal space for the most general case of an unknown crystal orientation.