Ni(C3H10N2)2NO2(ClO4)晶体的ESR研究

报道了Ni(C₃H₁₀N₂)₂NO₂(ClO₄)晶体在T=1.5K温度和W波段的ESR实验.建立了d⁸离子基态³A₂(F)的零场分裂参量D,E,和g因子与斜方对称晶场势参量间的关系,并应用于Ni(C₃H₁₀N₂)₂NO₂(ClO₄)晶体.计算值与实验数据符合很好,表明所给关系式是合理的.     

Cu1-xHxZr2(PO4)3中Cu2+的EPR谱和局域结构研究

本文采用Cu²⁺斜方对称电子顺磁共振（EPR）参量的高阶微扰公式计算了晶体Cu_1-xH_xZr₂（PO₄）₃中Cu²⁺的EPR参量（g因子和超精细结构常数A因子）．计算结果表明,晶体Cu_1-xH_xZr₂（PO₄）₃中[CuO₆]^10-基团的Cu-O键长分别为R_||≈0.241 nm,R_⊥≈0.215 nm,平面键角τ≈80.1°;由于对称性降低,中心金属离子基态²A_1g（θ）和²A_1g（ε）有一定程度混合,混合系数α≈0.995．所得EPR谱图的理论计算值与实验数据符合得很好．     

掺Gd3+钼酸盐AMoO4 (A=Ca,Sr, Ba,Pb)自旋哈密顿参量的理论计算

采用基于单电子晶体场机制的对角化能量矩阵方法, 计算了Gd³⁺在钼酸盐AMoO₄ (A=Ca, Sr, Ba, Pb)晶体中的自旋哈密顿参量(g因子g_//, g_⊥和零场分裂b₂⁰, b₄⁰, b₄⁴, b₆⁰, b₆⁴). 矩阵中的晶体场参量采用重叠模型计算. 计算结果显示, 应用三个合理的可调参量[即重叠模型中的内禀参量A₂ (R₀), A₄ (R₀)和A₆ (R₀)], 计算的七个自旋哈密顿参量与实验结果符合甚好, 表明该方法可用于计算或解释Gd³⁺在晶体中的自旋哈密顿参量. 关键词： AMoO₄ (A=Ca,Sr,Ba,Pb):Gd³⁺晶体')" href="#">AMoO₄ (A=Ca,Sr,Ba,Pb):Gd³⁺晶体 自旋哈密顿参量 晶体场理论 对角化能量矩阵     

红宝石晶体的基态能级分裂及Jahn-Teller效应

应用不可约张量方法和群的理论构造了三角对称晶场中考虑自旋-轨道相互作用，自旋-自旋相互作用的3d³/3d⁷离子的可完全对角化的120阶微扰哈密顿矩阵，利用该矩阵计算了红宝石晶体的基态能级、零场分裂参量和Jahn-Teller效应，研究了自旋-轨道的自旋二重态对基态能级的贡献，证明其二重态对基态能级的贡献是不可忽略的，理论计算值与实验值相符合.在此基础上，进一步研究了自旋-自旋相互作用对红宝石晶体的光谱精细结构和零场分裂参量的影响，发现自旋-自旋相互作用对零场分裂参量的影响是不可忽略的. 关键词： 基态能级 精细结构 自旋-轨道相互作用 零场分     

单晶变角EPR谱的解释I.掺Cr3+铝铵矾单晶的EPR

对本征场的计算方法作了新的分析,提出了新的计算方案,根据这方案编写了程序,并应用这一程序对掺Cr³⁺铝铵矾单晶变角的EPR谱作了解析,得到了更加可靠更为准确的自旋-Hamilton参数;D=0.04845cm^-1,g_x=g_y=1.9761,g₂=1.9752.用上述参数,对各个离子不同角度下的广义本征场计算的共振磁场与实验数据拟合很好.充分说明采用此法处理EPR的优越性.     

ZnAl2O4:Cr3+晶体4A2基态ZFS及其三角晶格畸变研究

用对角化哈密顿矩阵的方法,借助New man晶场叠加模型,研究了ZnAl₂O₄:Cr³⁺晶体的基态零场分裂(ZFS)及其电子光谱,理论结果与实验一致.定量研究表明,掺杂晶体ZnAl₂O₄:Cr³⁺中,络离子(CrO₆)^9-局域结构应有压缩的三角畸变(△θ=3.06°).同时指出,自旋二重态对⁴A₂基态ZFS参量b₂⁰的贡献不可忽略,而对g因子的贡献甚微.     

卷积差方法在过渡金属离子EPR谱中的应用

用卷积差方法提高EPR谱的分辨率,可以从多种过渡金属离子的迭加谱中直接测量出不同离子的波谱参数a_R、a_⊥、g_R和g_⊥,该方法还可提高各向异性g因子的测量精度.     

三角对称下3d3离子2E态g因子性质研究

采用完全对角化方法,以尖晶石结构的ZnAl₂Ｏ₄:Cr^3＋,ZnGa₂Ｏ₄:Cr^3＋和MgAl₂Ｏ₄:Cr^3＋系列晶体为例,联系晶格局域结构,对三角对称下3d³离子²E态g因子性质进行了研究.研究中考虑了包括自旋与自旋相互作用、自旋与另一轨 关键词： 2E态g因子')" href="#">²E态g因子 3离子')" href="#">3d³离子 尖晶石结构 磁相互作用     

GeFe2O4晶体的基态能级和零场分裂参量

GeFe₂O₄是一种单晶化合物，考虑到由3个〈111〉方向之一的一个 轴，从一个中心位置 到另一个中心位置之间，以Fe²⁺离子为中心离子和O^2-为配体构 成了三角（C 3v）对称体系.利用不可约张量理论，建立了3d⁴/3d⁶离子三角（C3 v）对称的晶体场和 自旋相互作用哈密顿矩阵，因此，由完全对角化的晶体场和自旋-轨道相互作用哈密顿矩阵 和电子顺磁共振理论公式求出单晶GeFe₂O₄中Fe²⁺离子 的电子顺磁共振零场分 裂参量D和F-a.并研究了自旋三重态对电子顺磁共振（EPR）零场分裂的贡献.结果显示自旋 三重态对基态零场分裂的贡献是较强的，理论计算结果与实验值相符. 关键词： 自旋三重态 晶体场 低自旋态 高自旋态 零场分裂     

β-二酮Gd(Ⅲ)配合物EPR谱解析及其零场分裂张量的计算

稀土Gd (Ⅲ)的电子组态为4f⁷,七个未偶电子之间较强的自旋自旋相互作用,以致于EPR波谱相互重叠呈一条简单的包络线,几乎得不出有用的信息,限制了EPR波谱在这一领域中的应用.本文用自编的一个模拟程序,先是对包络线进行分解剥离,确定各谱峰的g-值.然后用自编的另一个程序根据所得之g-值计算出零场分裂张量D和E.对五个不同的β-二酮类Gd (Ⅲ)配合物进行了解析和计算,得到了满意的结果.     

Study on the local structure of (CrO6) complex in garnet crystals by optical and EPR spectrum

The local lattice structure distortions for YAG and YGG systems doped with Cr³⁺ have been investigated by the d³ configuration complete energy matrices which contain the Zeeman energy besides the electron–electron interaction, the trigonal crystal field as well as the spin–orbit coupling interaction. The local lattice structure parameters R and θ of (CrO₆)⁹⁻ complex are determined for Cr³⁺ in YAG and YGG systems, respectively. The calculated results show that the local lattice structures have expansion distortions, which almost tend to the same after distortions. Meanwhile, the EPR parameter D, g factors (g_||, g) and optical spectrum of these systems have been interpreted uniformly by quantitative calculation. It is shown that the effect of the orbit reduction factor k on g factors (g_||, g) cannot be ignored.     

Mo-SiO2-C3H6催化反应体系的ESR动态表征

文章考察了Mo-SiO₂催化剂体系在丙烯歧化反应过程中的动态ESR波谱,发现在催化歧化反应过程中有两种Mo⁵⁺顺磁中心,一种为扰动八面体配位,g_||=1.89,g_⊥=1.94;另一种为扰动四棱锥配位,g_||=1.86,g_⊥=1.95。测得同位素^95,97Mo⁵⁺的各向异性超精细耦合常数A_||=90.3×10^-4cm^-1,A_⊥=44.8×10^-4cm^-1;观测到反应产生的积炭信号,g≈2.0O₂;氧阴离子自由基信号g₁=2.018,g₂=2.011,g₃=2.005。用LCAO-MO理论对上述Mo⁵⁺的ESR波谱进行计算,求得分子轨道系数,发现并总结出△g_||/△g_⊥与△g成直线关系,并建议用△g_||/△g_⊥=4(△E(B₂→E))/(△E(B₂→B₁)(β₁/ε)²之比值作为衡量C_4v扰动程度的尺度。     

Theoretical studies of spin-Hamiltonian parameters for Ni ions in CsMgX3 (X=Cl, Br, I) crystals from the two-mechanism model

In this paper, the high-order perturbation formulas of spin-Hamiltonian (SH) parameters (g factors g, g and zero-field splitting D), including both the crystal-field (CF) and for the first time charge-transfer (CT) mechanisms, are established for 3d⁸ ions in trigonal octahedral clusters. By using these formulas, the SH parameters of Ni²⁺ ions in CsMgX₃ (X=Cl, Br, I) crystals are calculated. The results are consistent with the experimental values. The calculations suggest that the sign of Q^CT (Q=Δg, Δg or D, where the g-shift Δg_i=g_i−g_e, g_e≈2.0023 is the value of free-electron) due to CT mechanism is the same as that of the corresponding Q^CF due to CF mechanism, and the relative importance of CT mechanism (characterized by Q^CT/Q^CF) increases with the increasing atomic number of ligand X. So, for the 3dⁿ ML_m clusters with ligand having large atomic number, the reasonable theoretical explanations of all SH parameters should take both CF and CT mechanisms into account. The defect structure of (NiX₆)⁴⁻ impurity centers in CsMgX₃:Ni²⁺ crystals is also considered in our model.     

Theoretical Studies of Electron Paramagnetic Resonance Parameters for Cr4+ Ions in Ca2GeO4 Crystals

The electron paramagnetic resonance (EPR) parameters (zero-field splitting D and g factors g_||, g_⊥) of Cr⁴⁺ ions in Ca₂GeO₄ crystals have been calculated from the complete high-order perturbation formulas of EPR parameters for a 3d² ion in trigonal MX₄ clusters. In these formulas, in addition to the contributions to EPR parameters from the widely used crystal-field (CF) mechanism, the contributions from the charge-transfer (CT) mechanism (which are often neglected) are included. From the calculations, it is found that for the high valence state 3dⁿ ions in crystals, the reasonable explanation of EPR parameters (in particular, the g factors) should take both the CF and CT mechanisms into account.     

The structure of the Newtonian limit

We consider a smooth one-parameter family of four-dimensional manifolds X,≥0, each one endowed with a covariant metric g. It is assumed that g is a Lorentz metric for each >0, i.e., the signature of g is (+,−,−,−) for >0, while the limit metric g₀ on X₀ is assumed to be degenerated of rank 1, i.e., the signature of g₀ is (+,0,0,0). We characterize when the limit manifold X₀ inherits the geometric structure of a Newtonian gravitation. The limit manifold X₀ is a Newtonian gravitation if and only if there exist the limits of the Levi-Civita connection , the curvature operator and the contravariant Einstein tensor G² as →0. Moreover, the existence of these limits is characterized in terms of the Taylor expansion of the family {g} with respect to the parameter .     

Theoretical Calculations of g Factors and Hyperfine Structure Constants for Co^2＋ in Cd^2＋（I） and Cd^2＋（Ⅱ） Sites of CsCdCl3 Crystal

The g factors g||,g⊥ and hyperfine structure constants A||,A⊥ for two trigonal Co^2 centers (i.e.,Co^2 in Cd^2 (I) and Cd^2 (Ⅱ) sites) in CsCdCl3:Co^2 crystals are calculated from the high-order perturbation formulas based on the cluster approach.In the calculation,the contributions from covalency effect and configuration interaction effect are considered and the parameters related to both effects are obtained from the optical spectrum and the structure data of the studied system.The results are in good agreement with the observed values.     

外加电场和Al组分对纤锌矿AlGaN/GaN量子阱中的电子g因子的影响

研究了外加电场和垒层的Al组分对AlGaN/GaN量子阱中的横向和纵向g因子(g⊥和g//)及其各向异性(δg)的影响.纤锌矿体结构的贡献(S_//~(bulk)和g⊥)是构成g⊥=(g//-g_0)=g_//~(bulk)的主要部分,但g_//~(bulk)和g⊥的差值很小且几乎不随外加电场和Al组分改变.当外加电场的方向同极化电场的方向相同(相反)且增加时,g_//~(bulk)和g_⊥~(bulk)的强度同时增加(减小).当外加电场从-1.5×10~8 V·m~(-1)到1.5×10~8 V·m~(-1)变化时,异质结界面对g⊥的贡献(Γ_(Inter))大于0且强度缓慢增加,阱层对g⊥的贡献(Γ_W)小于0且强度也缓慢增加.然而Γ_(Inter)的强度比Γ_w大,且后者的强度随着外加电场的改变增加较快,所以δg0且强度随着外加电场的变化而减小.当垒层的Al组分增加时,如果不考虑应变效应(S_(1,2)=0),g_//~(bulk)和g⊥的强度同时减小,然而考虑应变效应后(S_(1,2)≠0),β_1g⊥和γ1(g_//~(bulk))的强度随着Al组分的增加而增加.随着垒层Al组分的增加,Γ_(Inter)和Γ_w的强度都增加,但Γ_(Inter)的强度较大且增加得较快,所以的的强度缓慢增加.g⊥的强度先随着Al组分的增加而减小,然后又随着Al组分的增加而增加,因为g⊥小于0且强度随着Al组分增加得很快.结果表明,AlGaN/GaN量子阱结构中的电子g因子及其各向异性可以被外加电场、垒层的Al组分、应变效应和量子限制效应共同调制.     

非晶锂离子导体B2O3-Li2O-LiCl一Al2O3中VO2+的电子自旋共振

两种非晶锂离子导体B₂O₃-0.7Li₂O-0.7LiCl-xAl₂O₃-0.1V₂O₅(x=0.05和0.15)的电子自旋共振谱研究表明:(i)ESR线型是高斯型,证实V₂O₅添加量适当;(ii)超精细结构来源于VO²⁺络离子,具有四角对称性,属C_4v群。越精细耦合张量的平行分量平均值A_//=0.0175cm^-1,垂直分量A_⊥=0.0063cm^-1。由g_//(g_⊥)求出其基态²B_2g与第一激发态²E_g的能级间距△₁=2.46×10⁴ cm^-1,基态与第二激发态²B_1g的能级间距△₂=3.03×10⁴ cm^-1;(iii)变温实验证实:Al₂O₃组分较少(x=0.05)的非晶ESR强度比x=0.15的非晶高3倍至2倍,而Al₂O₃组分越多则ESR强度随温升下降越小。     

晶体NiF2的吸收光谱和电子顺磁共振谱的一种完全对角化计算

采用半自洽场(semi-SCF)自由Ni²⁺的d轨道波函数、点电荷-偶极子模型和Ni²⁺-6X^-(X=F,Cl,Br,I)络合物的μ-κ-α模型,建立结构参数与光谱、电子顺磁共振(EPR)谱(零场分裂D,E和顺磁g因子)之间的定量关系.利用能量矩阵完全对角化方法(CDP)和高阶微扰方法,统一解释NiF₂晶体的局部结构、吸收光谱和电子顺磁共振谱(EPR).比较两种方法计算得到的零场分裂D,E和顺磁g因子.结果表明:①高阶微扰方法算出的D,E值误差大;②能量矩阵完全对角化方法(CDP)算出的D,E值、光谱、顺磁g因子的值都与实验符合很好.