Marangoni effect induced micro/nano-patterning on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> phase change thin film by laser pulse

Thermocapillary and chemicapillary effects are known to coexist in a material molten pool when irradiated by a pulse laser. According to the effects, we fabricate various patterns with different shapes on a Sb₂Te₃ phase change thin film by precisely adjusting the pulse energy. In this process, the laser power is fixed at 5.0 mW, and the pulse width is adjusted from 100 ns to 5 ns. The shape of the patterns gradually changes from a dimple-bowl shape, a dome shape, a “Sombrero” shape to a deep-bowl shape following an increase in the pulse energy, which corresponds to the crystallization-threshold, bump-threshold, rupture-threshold, and ablation-threshold of the material. The different patterns are the results of the competition between the thermocapillary and chemicapillary effects in the molten pool, which determine the nature of the flow and lead to the different patterns in different laser parameters.     

Irradiation of amorphous Ta<Subscript>42</Subscript>Si<Subscript>13</Subscript>N<Subscript>45</Subscript> film with a femtosecond laser pulse

Films of 260 nm thickness, with atomic composition Ta₄₂Si₁₃N₄₅, on 4″ silicon wafers, have been irradiated in air with single laser pulses of 200 femtoseconds duration and 800 nm wave length. As sputter-deposited, the films are structurally amorphous. A laterally truncated Gaussian beam with a near-uniform fluence of ∼0.6 J/cm² incident normally on such a film ablates 23 nm of the film. Cross-sectional transmission electron micrographs show that the surface of the remaining film is smooth and flat on a long-range scale, but contains densely distributed sharp nanoprotrusions that sometimes surpass the height of the original surface. Dark field micrographs of the remaining material show no nanograins. Neither does glancing angle X-ray diffraction with a beam illuminating many diffraction spots. By all evidence, the remaining film remains amorphous after the pulsed femtosecond irradiation.     

Kinetics of low-temperature initiation of H<Subscript>2</Subscript>/O<Subscript>2</Subscript>/H<Subscript>2</Subscript>O mixture combustion upon the excitation of molecular vibrations in H<Subscript>2</Subscript>O molecules by laser radiation

The initiation of H₂/O₂/H₂O mixture combustion when asymmetric vibrations in H₂O molecules are excited by a resonant IR laser radiation is considered. It is shown that the vibrational excitation of the molecules gives rise to new efficient channels for the formation of chemically active O and H atoms and OH radicals. As a result, the chain mechanism of combustion in the mixtures is enhanced and, as a consequence, the induction time is cut and the ignition temperature is lowered. Even at a minor radiant energy flux delivered to the gas (E_in≈2.5 J/cm²), the ignition temperature of the stoichiometric H₂/O₂ mixture containing only 5% of H₂O may become as low as 300 K.     

Neutron diffraction investigation of a metamagnetic transition in the Tb<Subscript>0.1</Subscript> Tm<Subscript>0.9</Subscript>Co<Subscript>2</Subscript> compound

The Tb_0.1Tm_0.9Co₂ compound is investigated using neutron diffraction. It is shown that this compound undergoes an irreversible band metamagnetic transition induced by an external magnetic field. The magnetization of the Co sublattice increases from 0.2 to 0.6 μ_B. The critical field strength is approximately equal to 1 T at temperatures of 1.8 and 4.0 K. As the temperature increases, the effect of the magnetic field on the magnetic state of the sample weakens and, at 25 K, no noticeable changes are observed in an external field of 0.75 T. The metamagnetic transition at 1.8 K is accompanied by the disappearance of rhombohedral distortions and brings about a lattice expansion by approximately 1%.     

Spectroscopy and energy balance of the Nd<Subscript>2</Subscript>O<Subscript>3</Subscript> selective emission upon the laser thermal excitation

The laser thermal melting of powders is used to fabricate selective emitters (SEs) that represent Nd₂O₃ and Y₂O₃-Nd₂O₃ polycrystals on quartz holders. The SEs are stable under atmospheric conditions upon multiple heating by laser radiation up to the melting point. The spectral shape and integral intensity of the selective heat radiation (SHR) of the Nd₂O₃ microcrystalline powder and the Nd₂O₃ and Y₂O₃-Nd₂O₃ polycrystals are experimentally studied in the near-IR and visible spectral ranges versus the intensity of the laser thermal excitation at a wavelength of 10.6 μm in comparison with the absorption and luminescence spectra of the YAG:Nd³⁺ and YAlO₃:Nd³⁺ single crystals. The SHR spectra are determined by the vibronic transitions between the electronic states ² G _7/2-⁴F_3/2 ⁴I_11/2 and ⁴I_9/2 of the Nd³⁺ ions that are thermally excited due to the multiphonon transitions from the ground state. The energy balance of the SE laser thermal heating is experimentally investigated. The coefficient of the laser energy conversion to the Nd³⁺ SHR is measured, and the emissivity of the SEs that can be used for the study of the thermophotovoltaic generators and the optical excitation of the laser-active media in the near-IR spectral range is estimated.     

Photoacoustic spectroscopy of thin films of As<Subscript>2</Subscript>S<Subscript>3</Subscript>, As<Subscript>2</Subscript>Se<Subscript>3</Subscript> and GeSe<Subscript>2</Subscript>

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As₂S₃, As₂Se₃ and GeSe₂ exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting films is necessary to study the memory density. The thermal conductivity of thin films of As₂S₃ (thickness 100 μm and 80 μm), As₂Se₃ (thickness 100 μm and 80 μm) and GeSe₂ (thickness 120 μm and 100 μm) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker films is larger than the thinner films. This can be explained by the thermal resistance effect between the film and the surface of the substrate.      

Relaxation processes upon photoexcitation of semiconductor CdF<Subscript>2</Subscript> by laser pulses

The microwave-cavity-based technique is used to study the processes of photoionization of electrons from donor levels to the conduction band in semiconductor CdF₂ crystals doped with Y, In, or Ga. The samples were excited by periodic pulses of Nd-laser (λ = 1.06 μm, pulse width ～10 ns) in the temperature range 6–77 K. The transient processes were detected in the absorption and dispersion modes related to variation of the imaginary and real parts of the complex permittivity ?₁ ? i?₂ induced by the light pulses. The observed signals consisted of short peak at t ～ 0, approximately 40–70 ns in length, and a long tail with a duration of ～100 ms. The short peak is likely to be related to the stay of the photoexcited carriers in the conduction band, while the long tail is associated with the processes of excitation relaxation after the electrons coming back to the donor levels of the impurity band. The weak temperature dependence of the width of the peak at t ～ 0 is explained by the tunneling mechanism of relaxation of electrons through the energy (or, probably, spatial) barrier separating the bound and free states of the carriers in the semiconductor CdF₂.     

Femtosecond laser pulse filamentation versus optical breakdown in H<Subscript>2</Subscript>O

The competition between femtosecond laser pulse induced optical breakdown and femtosecond laser pulse filamentation in condensed matter is studied both experimentally and numerically using water as an example. The coexistence of filamentation and breakdown is observed under tight focusing conditions. The development of the filamentation process from the creation of a single filament to the formation of many filaments at higher pulse energy is characterized systematically. In addition, strong deflection and modulation of the supercontinuum is observed. They manifest themselves at the beginning of the filamentation process, near the highly disordered plasma created by optical breakdown at the geometrical focus. Received: 9 July 2002 / Revised version: 15 November 2002 / Published online: 19 March 2003 RID="*" ID="*"Corresponding author. Fax: +1-418/6562-623, E-mail: wliu@phy.ulaval.ca     

Luminescence and selective heat radiation of Yb<Subscript>2</Subscript>O<Subscript>3</Subscript> upon the resonant and thermal laser excitation

Yb₂O₃ polycrystals with a size of up to 10 mm are synthesized using the sintering and melting of the ultrapure Yb₂O₃ powders by the CO₂-laser radiation with the power P _L ≤ 100 W at the wavelength λ = 10.6 μm at the melting point T _m = 2703 K, forming due to surface tension in melt, and crystallization in air. The analysis of the polycrystal microstructure using the methods of optical and electron microscopy and X- ray diffractometry shows that perfect oxide crystallites are formed in the course of crystallization after melting-through. The transformation of the luminescence and selective heat radiation (SHR) spectra of the Yb₂O₃ polycrystals is studied under the resonant excitation at λ ≈ 975 nm using a laser diode and the laser heating at the wavelength λ = 10.6 μm. When the resonant excitation power of the Yb³⁺ ions increases from 0.15 to 4.5 W, the Stokes luminescence of the Yb₂O₃ polycrystals is sequentially transformed into SHR and the thermal radiation of the crystal lattice. The transformation of the emission spectra of the Yb₂O₃ polycrystals with an increase in the laser heating intensity by about four orders of magnitude can be represented as the low-temperature heat radiation, spectral burst of the thermodynamically nonequilibrium SHR of the Yb³⁺ ions, and the high-temperature radiation of the crystal lattice. The temperature dependence of the luminescence spectra and SHR of the Yb₂O₃ polycrystals on the intensity of the laser and laser-thermal excitation and the concentration quenching of the Yb³⁺ luminescence in oxides indicate the key role of the interaction of the f-electron shell of the Yb³⁺ ions with the natural oscillations of the crystal lattice in the processes of the multiphonon excitation and nonradiative (multiphonon) and radiative (vibronic) relaxation.     

Properties of powders produced by evaporating CeO<Subscript>2</Subscript>/Gd<Subscript>2</Subscript>O<Subscript>3</Subscript> targets exposed to pulsed-periodic radiation of a CO<Subscript>2</Subscript> laser

The characteristics (phase composition, grain shape, grain size distribution, and specific surface area) of Ce_0.78Gd_0.22O_2-δ nanopowders produced by exposing the target to pulsed CO₂ laser radiation are reported. Reasons for a threefold increase in the output of the experimental powder-preparation unit (up to 60 g/h) with the characteristic grain size (≈10 nm) remaining unchanged are discussed.     

Absorption spectrum of thin K<Subscript>2</Subscript>CdI<Subscript>4</Subscript> films

The absorption spectrum of thin films of a new compound, K₂CdI₄, was studied. It was established that this compound belongs to direct-bandgap dielectrics and that its low-frequency electronic and excitonic excitations are localized in CdI ₄ ^2? structural blocks of the crystal lattice. It was found that, in M₂CdI₄ compounds (M = K, Rb, Cs), the bandgap width E _g grows and the spin-orbit splitting of the valence band top decreases with increasing ionic radius of the alkali metal.     

Annealing study of electrodeposited CuInSe<Subscript>2</Subscript> and CuInS<Subscript>2</Subscript> thin films

In this study CuInSe₂ and CuInS₂ thin films were prepared onto ITO glass substrate using the electrodeposition technique in aqueous solution. The electrodeposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis. The annealing effects on electrodeposited precursors were investigated. The chalcopyrite structure of CuInSe₂/CuInS₂ showed an enhancement of crystallinity after subsequent selenization/sulfurization treatment in Se/S atmosphere, respectively. XRD and SEM studies revealed a dramatic improvement of the crystalline quality of CIS films after annealing treatments. Mott–Schottky measurements were used to assess the conductivity type of the films and their carrier concentration. The prepared samples underwent an etching process to remove the binary accumulated Cu_2?x(Se,S) phases shown in FESEM pictures. This etching process has shown a noticeable decrease in both, the flat band potential, V_fb (V), and the number of acceptors, N_A (cm^?3) in selenized CuInSe₂ and sulfurized CuInS₂ samples.     

Pulsed laser deposition of BaGa<Subscript>2</Subscript>O<Subscript>4</Subscript>

This paper reports the first results obtained on monobarium gallate thin films grown on silicon and platinum coated substrates by pulsed laser deposition. The influence of oxygen background pressure and substrate (or post-annealing) temperature on the film properties was studied. The films were characterized by XRD, RHEED, AFM, photoelectron and electrical impedance spectroscopy. The structure analysis showed that the films crystallized into a hexagonal phase, most probably into (metastable) α-BaGa₂O₄. Depending on deposition conditions, films with different (from nearly epitaxial to polycrystalline) textures were obtained.     

Thermal sensors based on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> and (Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>70</Subscript>(Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>30</Subscript> thin films

Thin films of Sb₂Te₃ and (Sb₂Te₃)₇₀(Bi₂Te₃)₃₀ alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2?×?10^?6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ and (Sb₂Te₃) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.     

UV absorption spectra of thin films of Cs<Subscript>2</Subscript>CdI<Subscript>4</Subscript> and Rb<Subscript>2</Subscript>CdI<Subscript>4</Subscript> ferroelectrics

Thin films of M₂CdI₄ ferroelectrics (M=Cs, Rb) of orthorhombic structure were synthesized, and their electronic optical spectrum was studied. It was established that both compounds belong to direct-gap dielectrics and that their low-frequency excitons are localized on a sublattice made up of (CdI₄)^2? tetrahedra. The temperature dependence of the exciton band parameters was studied for Cs₂CdI₄ within the temperature interval 90–420 K. The phase transitions occurring in this interval manifest themselves as breaks in the temperature behavior of the band spectral positions and weak peaks in the halfwidth and oscillator strength.     

Dynamics of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> particles accelerated in the field of a submillisecond pulse from an YAG: Er laser

The effect of the laser energy density on the velocity of sapphire particles accelerated in the field of a submillisecond pulse from an YAG: Er laser is reported for the first time. An original velocity-measuring system is described. It is shown that the acceleration of sapphire particles immersed in water (suspension) requires an energy that is nearly half as great as that needed to accelerate the particles containing the water adsorbed by the surface (powder). It is found that the particle velocity is nonuniformly distributed over the period of the laser pulse action.     

Spectral characteristics of a Yb-doped Y<Subscript>2</Subscript>O<Subscript>3</Subscript> ceramic laser

We report the experimental observation of random wavelength emission and intensity-dependent central-wavelength shift in a diode-pumped Yb³⁺-doped Y₂O₃ ceramic laser. We show experimentally that, like conventional lasers, the emission of the laser has fixed well-defined transverse modes; however, its instantaneous emission wavelengths change randomly with time. The central wavelength of the laser emission also shifts with the intracavity light intensity. A model was developed to describe the spectral behavior of Yb³⁺-doped lasers. We show that the observed random wavelength emission and central lasing wavelength shift of the laser could be well explained based on the strong reabsorption of light in the gain medium. PACS 42.55.Rz; 42.60.Mi; 42.55.Xi     

Effects of LaNiO<Subscript>3</Subscript> on the structures and properties of SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript> thin films

SrBi₂Ta₂O₉(SBT)/LaNiO₃(LNO)/Si and SBT/Pt/TiO₂/SiO₂/Si multilayers were fabricated by pulsed laser deposition. With Pt top electrodes, the measured remanent polarization (2P_r) of Pt/SBT/LNO/Si and Pt/SBT/Pt/TiO₂/SiO₂/Si capacitors was 6.5 C/cm² and 5.2 C/cm², respectively. Using LNO as both bottom electrodes and buffer layers, enhanced non-c-axis crystalline SBT films were induced, which resulted in a 2P_r greater than that of the Pt/SBT/Pt/TiO₂/SiO₂/Si capacitor. The hysteresis loop of the Pt/SBT/LNO/Si capacitor showed a great external-field-dependent horizontal shift. Using an electron-injection model, this dependence was addressed. The fatigue-free property of the Pt/SBT/LNO/Si capacitor was experimentally established, in that the non-volatile polarization decreased by less than 5% of the initial value after 1.44×10⁹ switching cycles . PACS 77.84.Dy; 68.65.+g     

Sub-wavelength micromachining of silica glass by irradiation of CO<Subscript>2</Subscript> laser with Fresnel diffraction

We investigated a simple and productive micromachining method of silica glass by ablation using a TEA CO₂ laser (10.6 μm) with a spatial resolution down to sub-wavelength scale. The silica glass was irradiated by the TEA CO₂ laser light through a copper grid mask with square apertures of 20×20 μm² attached to the silica glass surface. After the irradiation, circular holes with a diameter of several μm were formed on the silica glass surface at the centers of the apertures due to the Fresnel diffraction effect. The minimum diameter of the holes was 3.4 μm. The characteristics of the micromachining are discussed based on the electric field distributions of the CO₂ laser light under the mask using a three-dimensional full-wave electromagnetic field simulation.