Spin polarization measurements of Co2Mn (Ga0.5Sn0.5) thin films

Co₂MnGa_0.5Sn_0.5 (CMGS) thin films were epitaxially grown on MgO (0 0 1) substrates by magnetron sputtering and the current spin polarizations of the films with different post annealing conditions were measured by the point contact Andreev reflection method. The film deposited at a substrate temperature of 150 °C had a B2 structure and its spin polarization was estimated to be 59%. The film was ordered to the L2₁ structure by annealing at 600 °C, and the spin polarization was enhanced to 66%. The spin polarization and the intensity of the L2₁ diffraction showed clear correlation, suggesting L2₁ ordering is essential to achieve higher spin polarization of this quaternary Heusler alloy.     

全介质三波长消偏振平板型分光膜的设计

 利用Needle合成法与Conjugate graduate精炼法,并基于Thelen和Costich的理论选择初始膜系的材料和结构,设计了532,633和1 315 nm三波长消偏振平板型分光膜。结果表明,此膜系在(532±10), (633±10)和(1 315±10) nm范围内的偏振分离都非常小。对于532,633和1 315 nm 3个波长位置的消偏振要求,入射角的合理变化范围可以是45±2°。     

Conoscopic interferometry for probing electro-optic coefficients of strontium calcium barium niobate crystal

The relation between the linear electro-optic effect and conoscopic interference has been investigated in a biased electro-optic crystal strontium calcium barium niobate (CSBN). Based on the change of interference patterns with applied field, an interferometric method for probing electro-optic coefficients of electro-optic crystals has been proposed. In our case, the linear electro-optic coefficients of CSBN:50 was first probed at γ₃₃=(141.0±0.5)×10⁻¹² m/V and γ₁₃=(85.0±0.5)×10⁻¹² m/V.     

Nanocrystalline formation and optical properties of germanium thin films prepared by physical vapor deposition

Amorphous and nanocrystalline germanium thin films were prepared on glass substrates by physical vapor deposition (PVD). The influence of thermal annealing on the characteristics of the Ge thin films has been investigated. X-ray diffraction (XRD) and SEM show amorphous structure of films deposited at room temperature. After thermal annealing, the crystallinity was improved when the annealing temperature increases. The Ge thin films annealed at different temperatures in air were nanocrystalline, having the face-centered cubic structure with preferred orientation along the 〈1 1 1〉 direction. The nanostructural parameters have been evaluated by using a single-order Voigt profile analysis. Moreover, the analysis of the optical transmission and reflection behavior was carried out. The values of direct and indirect band gap energies for amorphous and nanocrystalline phases are 0.86±0.02, 0.65±0.02 and 0.79±0.02, 0.61±0.02 eV, respectively. In addition, the complex optical functions for the wavelength range 600-2200 nm are reported. The refractive index of the nanocrystalline phase drops from 4.80±0.03 to 2.04±0.02, and amorphous phase changes from 5.18±0.03 to 2.42±0.02 for the whole wavelength range. The dielectric functions ε₁ and ε₂ of the deposited films were recorded as a function of wavelength within the range from 600 to 2200 nm.     

Optimization of VI/II pressure ratio in ZnTe growth on GaAs(0 0 1) by molecular beam epitaxy

ZnTe epilayers were grown on GaAs(0 0 1) substrates by molecular beam epitaxy (MBE) at different VI/II beam equivalent pressure (BEP) ratios (R_VI/II) in a wide range of 0.96-11 with constant Zn flux. Based on in situ reflection high-energy electron diffraction (RHEED) observation, two-dimensional (2D) growth mode can be formed by increasing the R_VI/II to 2.8. The Te/Zn pressure ratios lower than 4.0 correspond to Zn-rich growth state, while the ratios over 6.4 correspond to Te-rich one. The Zn sticking coefficient at various VI/II ratios are derived by the growth rate measurement. The ZnTe epilayer grown at a R_VI/II of 6.4 displays the narrowest full-width at half-maximum (FWHM) of double-crystal X-ray rocking curve (DCXRC) for (0 0 4) reflection. Atomic force microscopy (AFM) characterization shows that the grain size enlarges drastically with the R_VI/II. The surface root-mean-square (RMS) roughness decreases firstly, attains a minimum of 1.14 nm at a R_VI/II of 4.0 and then increases at higher ratios. It is suggested that the most suitable R_VI/II be controlled between 4.0 and 6.4 in order to grow high-quality ZnTe epitaxial thin films.     

Polarizing and non-polarizing mirrors for the hydrogen Lyman-<Emphasis Type="Italic">α</Emphasis> radiation at 121.6 nm

Efficient polarizing as well as non-polarizing mirrors for a wavelength of λ=121.6 nm (hydrogen Lyman-α radiation) are necessary to achieve an experimental determination of the magnetic field in the solar corona through the Hanle effect. We have designed, realized and characterized such mirrors. These consist of glass coated with a thin-film stack. The coatings use the most reflective (Al) and most transparent (fluorides) materials at this wavelength. Different coatings were explored which involve an increasing number of films in the coating stack. At the incident angle of maximum polarization where the p-polarized reflectivity R _p is minimized, an s-polarized reflectivity R _s as high as 69% is experimentally obtained with a coating made of a Fabry–Pérot resonator. To our knowledge, this value is the highest ever reported for a polarizing mirror at this wavelength. Additionally, efficient non-polarizing mirrors have been designed and realized by using a two-layer coating (MgF₂/Al/glass). By optimizing the fluoride layer thickness, a mirror with non-polarizing properties in the whole range of incident angles was realized.     

Design technique for all-dielectric non-polarizing beam splitter plate

There are many situations when, for the proper working, an opto-electronic device requiring optical components does not change the polarization state of light after a reflection, splitting or filtering. In this paper, a design for a non-polarizing beam splitter plate is proposed. Based on certain optical properties of homogeneous dielectric materials we will establish a reliable thin film package formula, excellent for the start of optimization to obtain a 20-nm bandwidth non-polarizing beam splitter.     

Observation of regular defects formed on the surface of PbTe thin films grown by molecular beam epitaxy

Regular shape defects on the surface of PbTe thin films grown by molecular beam epitaxy (MBE) were studied by scanning electron microscope (SEM). Two types of regular shape defects were observed on Te-rich PbTe films grown at substrate temperature T ≥ 235 °C with a beam flux ratio of Te to PbTe (R_f) to be 0.5 and at 280 °C with a R_f ≥ 0.4, which include cuboids and triangular pyramids. The formation mechanism of the observed regular shape defects is interpreted as following: They are the outcome of fast growth rate along {1 0 0} crystal planes that have the lowest surface energy and the enclosure of the {1 0 0} crystal planes. The formation of the regular shape defects in the growth of PbTe needs appropriate substrate temperature and Te-rich ambience. However, when R_f is decreased low enough to make the films slightly Pb-rich, triangular pits that originate from the insufficient glide of the threading dislocations along the main 〈1 1 0〉 {1 0 0} glide system of PbTe in Cottrell atmosphere, will be the main feature on the film surface.     

Structure and refractive index dispersive behavior of potassium niobate tantalate films prepared by pulsed laser deposition

Pure perovskite phase and crack-free KTa_0.5Nb_0.5O₃ thin films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition. The structure and orientation were analyzed by X-ray diffraction. The optical properties were investigated by an ellipsometer. The relationship between the refractive index dispersive behavior and internal structure was analyzed by Sellmeier dispersion model and single electronic oscillator approximation. The parameters of room temperature monomial Sellmeier oscillator were calculated. And the refractive index dispersive parameter E₀/S₀ of KTa_0.5Nb_0.5O₃ thin films on Pt/Ti/SiO₂/Si substrates is (6.72 ± 0.04) × 10⁻¹⁴ eV m², which is consistent with those of KTN crystals and compounds with ABO₃ perovskite type structure.     

In situ correction of windows’ linear birefringence in ellipsometry measurements

Exact method for in situ correction of windows’ linear birefringence in ellipsometry measurements with an isotropic sample is presented. The method is based on the idea that an unpolarized light is unaffected by a retarding optical element. An optical system was built, in order to simulate an ellipsometry measurement cell with windows with large retardation. The system consisted of two configurations, an “ideal” configuration in which optical retarders were used as windows, and a real life configuration in which sapphire slabs were used as windows. For the measurements with sapphire windows, the ellipsometric parameters of the gold mirror and the nickel foil without the correction yields (ψ,Δ)_Au=(0.66(±0.005),1.56(±0.05)),(ψ,Δ)_Ni=(-0.713(±0.005),1.4(±0.05)). While after the correction the parameters yields (ψ,Δ)_Au=(0.704(±0.006),2.15(±0.1)),(ψ,Δ)_Ni=(0.619(±0.005),2.33(±0.05)), which are in good agreement with our calibration measurements: (ψ,Δ)_Au=(0.709(±0.005),1.98(±0.06)) and (ψ,Δ)_Ni=(0.615(±0.005),2.32(±0.05)).     

Observation of triangle pits in PbSe grown by molecular beam epitaxy

PbSe thin films on BaF₂ (1 1 1) were grown by molecular beam epitaxy with different selenium beam flux. Evolution of PbSe surface morphologies with Se/PbSe beam flux ratio (R_f) has been studied by atomic force microscopy and high-resolution X-ray diffraction. Growth spirals with monolayer steps on PbSe surface are obtained using high beam flux ratio, R_f ≥ 0.6. As R_f decreases to 0.3, nano-scale triangle pits are formed on the surface and the surface of PbSe film changes to 3D islands when R_f = 0. Glide of threading dislocations in 〈1 1 0〉{1 0 0}-glide system and Pb-rich atom agglomerations are the formation mechanism of spiral steps and triangle pits. The nano-scale triangle pits formed on PbSe surface may render potential applications in nano technology.     

The crystalline orientation and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films mediated by the intermediate layer of LaNiO3

c-Axis-oriented and (1 1 7)-oriented Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films are successfully controlled by the intermediate layer of LaNiO₃ (LNO) with chemical solution deposition (CSD), respectively. X-ray diffraction (XRD) demonstrates that the structure and orientation of LNO thin films have a strong effect on the orientation of BLT thin films. Scanning electron microscopy suggests that BLT thin films on LNO electrode exhibit crack-free, uniform size grains and dense microstructure. A crystalline orientation dependent remanent polarization is observed in BLT thin films, and it is found that the remanent polarization (2P_r) of (1 1 7)-oriented films is larger than that of c-axis-oriented films. Our research directly demonstrates that the vector of the main spontaneous polarization in these layered perovskite materials (BLT) is along a-axis.     

Single crystal EPR and optical absorption study of Cr doped l-histidine hydrochloride monohydrate

EPR study of the Cr³⁺ ion doped l-histidine hydrochloride monohydrate single crystal is done at room temperature. Two magnetically inequivalent interstitial sites are observed. The hyperfine structure for Cr⁵³ isotope is also obtained. The zero field and spin Hamiltonian parameters are evaluated from the resonance lines obtained at different angular rotations and the parameters are: D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.9108±0.0002, g_y=1.9791±0.0002, g_z=2.0389±0.0002, A_x=(252±2)×10⁻⁴ cm⁻¹, A_y=(254±2)×10⁻⁴ cm⁻¹, A_z=(304±2)×10⁻⁴ cm⁻¹ for site I and D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.8543±0.0002, g_y=1.9897±0.0002, g_z=2.0793±0.0002, A_x=(251±2)×10⁻⁴ cm⁻¹, A_y=(257±2)×10⁻⁴ cm⁻¹, A_z=(309±2)×10⁻⁴ cm⁻¹ for site II, respectively. The optical absorption studies of single crystals are also carried out at room temperature in the wavelength range 195-925 nm. Using EPR and optical data, different bonding parameters are calculated and the nature of bonding in the crystal is discussed. The values of Racah parameters (B and C), crystal field parameter (Dq) and nephelauxetic parameters (h and k) are: B=636, C=3123, Dq=2039 cm⁻¹, h=1.46 and k=0.21, respectively.     

Electrical characteristics of BaTiO3/ Bi0.5K0.5TiO3 multilayered thin films synthesized via metalloorganic decomposition

Multilayered BaTiO₃(BTO)/Bi_0.5K_0.5TiO₃ (BKT) thin films have been fabricated on Pt/Ti/SiO₂/Si substrates using a metalloorganic decomposition process. XRD investigation of the resultant BTO/BKT multilayered thin films shows that they retain a perovskite-related structure type. They also exhibit a well-defined, polarization–electric field hysteresis loop with a measured remnant polarization (2P_r) of 5 µC/cm² at an applied electric field of 250 kV/cm. The measured dielectric constant and dielectric loss at 10 kHz is 470 and 0.07 respectively. These multilayer BTO/BKT films maintain an excellent fatigue-free character even after 10⁹ switching cycles. The mechanism associated with the enhancement of the electrical properties of the synthesized BTO/BKT films is also discussed.     

The dc magnetic field,temperature and film thickness dependence of microwave surface resistance of YBCO and DyBCO thin films

We investigated the dc magnetic field and temperature dependences of the microwave surface resistance (R_s) of YBa₂Cu₃O_y (YBCO) and DyBa₂Cu₃O_y (DyBCO) superconducting thin films. The YBCO and DyBCO thin films, each with a thickness of 300, 500, or 700 nm, were deposited on MgO (1 0 0) substrates by the thermal co-evaporation method. The R_s was measured using the dielectric resonator method. A dc magnetic field of up to 5.0 T was applied parallel to the c-axis of the superconducting thin films. The results showed that the R_s value had almost the same temperature dependence at various thicknesses in a zero-external field. The R_s of the YBCO and DyBCO thin films increased with the applied dc magnetic field. The DyBCO thin films showed weaker magnetic field dependence of R_s than the YBCO thin films. The R_s ratio (defined as R_s(5 T)/R_s(0 T)) linearly increased with the film thickness. These results show that pinning strength decreased with an increasing film thickness.     

Synthesis and electrochemical characteristics of Ta-N thin films fabricated by cathodic arc deposition

Ta-N thin films were deposited on AISI 317L stainless steel (SS) substrates by cathodic arc deposition (CAD) at substrate biases of −50 and −200 V. The as-deposited films were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray analysis (EDX). The results show that stoichiometric TaN with hexagonal lattice (3 0 0) preferred orientation was achieved at the bias of −200 V. On the other hand, Ta-rich Ta-N thin film deposited at −50 V shows amorphous nature. According to the XPS result, Ta element in the films surface exist in bonded state, including the Ta-N bonds characterized by the doublet (Ta 4f_7/2 = 23.7 eV and Ta 4f_5/2 = 25.7 eV). Electrochemical properties of the Ta-N coated stainless steel systems were investigated using potentiodynamic polarization and electrochemical impedance spectroscope (EIS) in Hank's solution at 37 °C. For the Ta-N coated samples, the corrosion current (i_corr) is two or three orders of magnitude lower than that of the uncoated ones, indicating a significantly improved corrosion resistance. Growth defects in the Ta-N thin films produced by CAD, however, play a key role in the corrosion process, especially the localised corrosion. Using the polarization fitting and the EIS modelling, we compared the polarization resistance (R_p) and the porosity (P) of the Ta-N coatings deposited at different biases. It seems that Ta-N film with comparatively lower bias (−50 V) shows better corrosion behavior in artifical physiological solution. That may be attributed to the effect of ion bombarding, which can be modulated by the substrate bias.     

Asymmetric electrical properties in Pt/Ba0.5Sr0.5Ti0.99Co0.01O3/Nb-doped SrTiO3 capacitors

Ba_0.5Sr_0.5Ti_0.99Co_0.01O₃ (BSTC) thin films have been fabricated with pulsed laser deposition on Nb-doped SrTiO₃ (STN) substrate. In Pt/BSTC/STN capacitor, we systematically investigated the capacitance, leakage current and polarization versus bias voltage characteristics, and found that curves of capacitance versus voltage and leakage current versus voltage were not symmetric, and polarization hysteresis loop exhibited large relaxation of the remnant polarization at negatively poled state. A detailed analysis of capacitance data demonstrated a difference of the built-in voltage between top Pt/BSTC interface (V_b,t=2.5 V) and bottom BSTC/STN interface (V_b,b=1.1 V). Such different built-in voltages lead to the presence of an internal electric field, which results in asymmetric electric characteristics in Pt/BSTC/STN capacitor.     

Influence of assisted ion energy on surface roughness and mechanical properties of boron carbon nitride films synthesized by DIBSD

The BCN thin films were produced by dual ion beam sputtering deposition (DIBSD). The influence of assisted ion energy on surface roughness and mechanical properties of BCN films were investigated. The surface roughness was determined by atomic force microscopy (AFM) and the mechanical properties of BCN firms were evaluated by nano-indentation in N₂ gas. The composition, structure and chemical bonding of the BCN thin films were analyzed by using energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), laser Raman spectroscopy and Fourier transform infrared spectroscopy (FTIR). These films appeared as amorphous structure. As a result, the BCN films with the smoothest surface (R_a = 0.35 nm and R_p-v = 4.4 nm) and the highest nano-hardness of 30.1 GPa and elastic modulus of 232.6 GPa were obtained at 200 eV and 12 mA with N₂:Ar = 1:1, and the chemical composition of this BCN film was 81 at.% B, 14 at.% C and 5 at.% N. Moreover, several bonding states such as B-N, B-C and C-N were observed in BCN thin films.     

Structural and electrical properties of (Na0.85K0.15)0.5Bi0.5TiO3 thin films deposited on LaNiO3 and Pt bottom electrodes

(Na_0.85K_0.15)_0.5Bi_0.5TiO₃ thin films were deposited on LaNiO₃(LNO)/SiO₂/Si(1 0 0) and Pt/Ti/SiO₂/Si(1 0 0) substrates by metal-organic decomposition, and the effects of bottom electrodes LNO and Pt on the ferroelectric, dielectric and piezoelectric properties were investigated by ferroelectric tester, impedance analyzer and scanning probe microscopy, respectively. For the thin films deposited on LNO and Pt electrodes, the remnant polarization 2P_r are about 22.6 and 8.8 μC/cm² under 375 kV/cm, the dielectric constants 238 and 579 at 10 kHz, the dielectric losses 0.06 and 0.30 at 10 kHz, the statistic d_33eff values 95 and 81 pm/V. The improved piezoelectric properties could make (Na_1−xK_x)_0.5Bi_0.5TiO₃ thin film as a promising candidate for piezoelectric thin film devices.     

Polarization-independent rapidly tunable optical add-drop multiplexer utilizing non-polarizing beam splitters in Ti:LiNbO3

A polarization-independent four-port wavelength-tunable optical add drop multiplexer (OADM) that utilizes non-polarizing relaxed beam splitters has been analyzed and demonstrated in Ti:LiNbO₃ at the 1530 nm wavelength regime. The design utilizes an asymmetric interferometer configuration with strain induced index grating for polarization coupling along its arms that are shifted in position relative to each other. Experimental results of the filter response agree with theoretical predictions. Electrooptic tuning over a range of 15.7 nm at a rate of 0.08 nm/V has been measured. A temporal response < 46 ns to a 20 V step change in tuning voltage has been demonstrated. Fiber-to-fiber insertion loss is ~ 6.5 dB.