掺铒钙铝硅玻璃的光学带隙

玻璃中稀土掺杂的离子的光谱性质受其周围的玻璃结构和在玻璃基质中的分布影响很大。利用熔融法制备了组分为9S iO2.26A l2O3.65CaO.1.0Er2O3.0.3Yb2O3和分别加入MgO以及La2O3的掺铒钙铝硅玻璃,并研究了其吸收边和光学带隙。计算得出离子填充比随玻璃的平均摩尔质量的增大而减小,同时利用Judd-O felt模型计算出该玻璃体系的Ω2,Ω4和Ω6参数,并进行了分析。随着MgO或La2O3的加入,吸收边向短波长移动,光学带隙增大,同时Ω2和Ω6值也增大。对ln(α)和ω的曲线进行线性拟合可以计算Urbach能量,其值与光学带隙的变化趋势一致。     

TeO2-TiO2-Bi2O3系统玻璃的热学特性及光学带隙研究

采用熔融淬冷法制备了系列高折射率的TeO2-TiO2-Bi2O3系统玻璃,测试了样品的密度、转变温度、析晶温度、折射率、吸收光谱,利用经典的Tauc方程计算了样品光学带隙允许的直接跃迁、允许的间接跃迁及Urbach能量.讨论了玻璃的热稳定性与组成之间的关系、研究了摩尔折射度、金属标准值、光学带隙、Urbach能量、Bi2O3和TiO2含量及光学碱度对玻璃样品折射率的影响.结果表明TeO2-TiO2-Bi2O3玻璃具有较好的热稳定性、样品的折射率随着摩尔折射度增大而增大,而光学带隙及金属标准值有减小的趋势,此外高的光学碱度对玻璃的高的三阶非线性也有一定的贡献.     

激光致晶态Ag11In12Te26Sb51相变介质光学常数的研究

研究了结晶度对Ag11In12 Te2 6Sb51相变薄膜光学常数的影响。用初始化仪使相变薄膜晶化 ,改变晶化参量得到不同的结晶度 ,当转速固定时 ,随激光功率的增加 ,折射率基本随之减小 ,消光系数先是增大 ,而后减小 ;当激光功率固定时 ,随转速的增大 ,折射率也随之增大 ,消光系数也是先增大后减小。非晶态与晶态间的变换、薄膜微结构的变化 (包括晶型的转变和原子间键合状态的变化 )以及薄膜内残余应力是影响Ag11In12 Te2 6Sb51相变薄膜复数折射率的主要原因。测量了单层膜的透过率和CD RW相变光盘中Ag11In12 Te2 6Sb51薄膜非晶态和晶态的反射率     

GeSb_2Te_4相变光存储薄膜材料的短波长静态记录特性的研究

研究了单层ＧｅＳｂ２Ｔｅ４真空射频溅射薄膜在４００ｎｍ～８３０ｎｍ区域的吸收、反射光谱和光学常数（ｎ，ｋ），发现ＧｅＳｂ２Ｔｅ４薄膜在４００ｎｍ～６００ｎｍ波长范围内具有较强的吸收。在短波长静态测试仪上测试了ＧｅＳｂ２Ｔｅ４薄膜的光存储记录特性，发现在５１４．５ｎｍ波长用较低功率的激光辐照样品时薄膜在写入前后的反射率变化较大，擦除前后的反射率对比度较低，可通过膜层设计来提高     

Study of aluminium-modified Ge2Sb2Te5 thin films for the applicability as phase-change storage device material

Electrical and optical studies have been carried out on aluminium-modified Ge₂Sb₂Te₅ thin films to check its applicability as an active material in optical and electrical memory storage devices. Five polycrystalline bulk samples were prepared with compositions: Al_x(Ge₂Sb₂Te₅)_1?x; x = 0, 0.08, 0.14, 0.21, 0.25. Amorphous thin films were deposited from the polycrystalline bulk by thermal evaporation. Temperature-dependent resistance shows the increase in crystallization temperature of Ge–Sb–Te films on aluminium addition. Activation energy for conduction, conductivity, optical band gap, coefficient of refraction and extinction coefficient are studied with respect to Al content in both amorphous and crystalline phases of Ge–Sb–Te alloy films.     

Ultrahigh Endurance and Extinction Ratio in Programmable Silicon Photonics Based on a Phase Change Material with ITO Heater

Phase-change-materials (PCMs) integrated photonics have attracted extensive attention in the field of optical neural networks. However, present PCMs-integrated photonics are still far from meeting the requirements in real-world applications due to its unsatisfactory endurance (<3000 cycles) and extinction ratio (ER<20 dB). Here, ultrahigh endurance (>30 000 cycles) and large ER (≥50 dB) are achieved in the photonic device by introducing a trench structure to the indium tin oxide (ITO) heater and utilizing tin-doped Ge₂Sb₂Te₅ (Sn-GST) as PCMs. This performance represents a landmark in the PCMs-integrated photonics, since it solves the problem of poor endurance of ITO heaters and can be comparable to the state-of the-art devices in terms of endurance and ER. This excellent endurance and ER stem from the trench structure and high optical contrast PCM of Sn-GST. Trench structure improves the heating efficiency of the ITO heater and effectively alleviates the thermal stress imposed on the ITO heater, resulting in ultrahigh endurance of the device. Sn-doping is also beneficial to the endurance and ER improvement, because it can effectively reduce the crystallization temperature and increase the absorption coefficient of the PCM layer. This work provides a new technology for the development of programmable photonics with ultrahigh endurance.     

Ge2 Sb2 Te5相变薄膜光学及擦除性能研究

利用蓝绿激光对非晶态Ge2Sb2Te5 相变薄膜进行擦除性能的研究,分别用1000 ns,500 ns,100 ns,60 ns脉宽的蓝绿激光进行实验.结果表明,一定脉宽下,反射率对比度随擦除功率的增加而增大.并且,在1000 ns,500 ns,100 ns,60 ns的激光作用时间范围内,非晶态薄膜均可转变成晶态.对于脉宽为60 ns的蓝绿激光,擦除功率大于4.49 mW以后,薄膜的反射率对比度高于15％,这表明Ge2Sb2Te5相变薄膜在短脉宽、低擦除功率条件下,可具有较高的晶化速度.同时,分析了非晶态和晶态Ge2Sb2Te5相变薄膜的光谱特性,对比研究了780 nm,650 nm,514 nm和405 nm波长处的反射率和反射率对比度,提出了Ge2Sb2Te5相变薄膜用于蓝光光盘的改进方法.     

短波长相变光盘记录介质Ge2Sb2Te5薄膜的制备及静态性能研究

研究了６３２．８ｎｍ波长下适用的相变光盘介质Ｇｅ２Ｓｂ２Ｔｅ５薄膜的制备方法和静态光存诸记录特性，发现该薄膜可在１００ｎｓ条件下实现直接重写，在优化膜层结构后，写擦循环次数高达１０＾６，反射率对比度在１５％以上。     

磁控溅射法制备的高反Ag_5In_5Te_(47)Sb_(33)相变薄膜的光谱性质及短波长静态记录性能

研究了磁控溅射制备的Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３相变薄膜的光谱及短波长静态记录性能。研究结果表明，晶态薄膜反射率较高，并在６００～９００ｎｍ波长范围内，晶态与非晶态的反射率和折射率相差很大。在ＣＤ－Ｅ系统的工作波长７８０ｎｍ处，晶态反射率高达５０％，光学常数为５．３４－１．０ｉ；非晶态反射率为２３％，光学常数为２．５－１．０３ｉ。从这一角度讲，Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３相变薄膜适于做ＣＤ－Ｅ系统的记录介质。另外，采用波长为５１４．４ｎｍ的短波长光学静态记录测试仪对Ａｇ５Ｉｎ５Ｔｅ４７Ｓｂ３３薄膜的记录性能进行了测试，结果表明，这种薄膜短波长记录性能较好，它在较低功率和短脉宽的激光束作用下就可得到较高的反射率对比度。     

Ab‐initio calculations and structural studies of (SiTe)2(Sb2Te3)n (n: 1, 2, 4 and 6) phase‐change superlattice films

(SiTe)₂(Sb₂Te₃)_n phase‐change superlattices were investigated theoretically and experimentally. Ab‐initio first principle simulations predicted that the (SiTe)₂(Sb₂Te₃)_n structures are stable and possess a Dirac semimetal‐like band structure. Calculation of the Z₂ invariant indicated that the structure was topologically nontrivial. (SiTe)₂(Sb₂Te₃)_n superlattice structures derived from first‐principles were successfully fabricated on a Si substrate by RF‐magnetron sputtering. XRD and TEM indicated that the superlattice films were highly oriented with the 00X planes of Sb₂Te₃ and the superlattice normal to the substrate surface. The (SiTe)₂(Sb₂Te₃)_n superlattice is suggested as new material system for interfacial phase‐change memory applications. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ab-initio study of Li based chalcopyrite compounds LiGaX2 (X= S,Se, Te) in tetragonal symmetry: A class of future materials for optoelectronic applications

Structural, electronic, optical, and thermoelectric aspects of chalcopyrite LiGaX₂ (X = S, Se and Te) compounds have been investigated by density functional theory (DFT) based Wien2k simulator. The optimized ground state parameters are calculated by Wu-Cohen generalized gradient approximation (WC-GGA) and electronic structures, which have been further improved by modified Becke-Johnson (mBJ) potential. Moreover, a comparative study is given among the contribution of three anions (S, Se and Te) in the same symmetry of tetragonal phase. The calculated band gaps of the studied compounds are 3.39, 2.83, and 1.96 eV for LiGaS_2, LiGaSe₂ and LiGaTe₂, respectively. The observed band gaps consider the studied compounds are potential materials for optoelectronic devices. In addition, the optical response of the studied materials has been analyzed in terms of dielectric constants, refraction, absorption, reflectivity and energy loss function. We have also reported the thermoelectric properties like Seebeck coefficient, thermal and electrical conductivities, and figure of merit as function of temperatures by using BoltzTrap code. The high thermal efficiency and absorption spectra in the visible region make the studied materials multifunctional for energy applications.     

晶体NiX2(X=Cl,Br,I)的光谱和电子顺磁共振谱研究

在强场耦合图像中,采用双自旋-轨道耦合(SO)参量模型建立了过渡族3d2(3d8)离子的三角对称下全组态光谱能级和电子顺磁共振(EPR)公式.与经典的晶体场理论(仅考虑中心金属离子的自旋-轨道耦合作用)相比较,该公式还包括了配体离子的自旋-轨道耦合作用的贡献,这一模型在应用于计算共价性较强的晶体光谱和电子顺磁共振谱可得到合理的结果.作为验证,用完全对角化方法研究了品体NiX2(X=Cl,Br,I)的光谱和电子顺磁共振谱,结果表明,理论与实验很好地符合.建立的全组态谱能级和电子顺磁共振公式为更精确地计算光谱和电子顺磁共振谱提供了一条可行方法.