Redox equilibrium of samarium ions doped in Al2O3-SiO2 glasses

Redox reaction of samarium ions doped in Al₂O₃-SiO₂ glasses, prepared by a rapid cooling technique of the melts, was examined by the measurement of the optical absorption and fluorescence properties. It was found that the doped samarium ions are easily reduced and oxidized by heating in H₂ and O₂ gases, respectively. The redox kinetics of samarium in the H₂ and O₂ atmospheres obey good first-order kinetics. The activation energy for the Sm³⁺ reduction in the 10Al₂O₃90SiO₂ glass was estimated to be ∼70 kJ/mol, which decreased with the increasing Al₂O₃ content. On the other hand, the activation energies for the oxidation were ∼90 kJ/mol, which only slightly depends on the glass composition. In these glasses, the samarium ions are preferentially surrounded by the Al-O polyhedra, where the oxygen ions are easily removed to form defect centers. It was concluded that the movement of the oxygen ions in the Al-O polyhedra determine the redox equilibrium of the samarium ions.     

Blue light emission from Eu ions in sol-gel-derived Al2O3-SiO2 glasses

Blue light-emitting glasses were successfully prepared by doping Eu²⁺ ions in the system Al₂O₃-SiO₂. The Al₂O₃-SiO₂ glasses doped with Eu³⁺ ions were synthesized using a sol-gel method, followed by heating in hydrogen gas atmosphere to reduce into the Eu²⁺ ions. The obtained glasses exhibited emission spectra with peak at ∼450 nm due to 4f⁶5d→4f⁷ (⁸S_7/2) transition, the intensities of which strongly changed depending on their glass composition and heating conditions. The emission quantum efficiency of 48% was achieved by heating the glass with the ratio of Al³⁺ to Eu³⁺ at about 6 at 1000 °C in hydrogen gas atmosphere. It was found that the Al₂O₃-SiO₂ glasses were appropriate not only for homogeneously doping the Eu³⁺ ions in glass structure but also reducing to Eu²⁺ ions, resulting in enhanced blue light-emission properties.     

Al2O3绝缘层的AlGaN/GaN MOSHEMT器件研究

在研制AlGaN/GaN HEMT器件的基础上,采用ALD法制备了Al₂O₃ AlGaN/GaN MOSHEMT器件.通过X射线光电子能谱测试表明在AlGaN/GaN异质结材料上成功淀积了Al₂O₃薄膜.根据对HEMT和MOSHEMT器件肖特基电容、器件输出以及转移特性的测试进行分析发现：所制备的Al₂O₃薄膜与AlGaN外延层间界面态密度较小,因而MOSHEMT器件呈现出较 关键词： 2O₃')" href="#">Al₂O₃ ALD GaN MOSHEMT     

In situ formation of Al2O3-SiO2-SnO2 composite ceramic coating by microarc oxidation on Al-20%Sn alloy

In situ formation of Al₂O₃-SiO₂-SnO₂ composite ceramic coating on Al-20%Sn alloy was successfully fabricated in aqueous Na₂SiO₃ electrolyte by microarc oxidation technology. The compositions, structure, mechanical and tribological properties of the composite coating were detailed studied by scanning electron microscope, energy dispersive spectroscopy, X-ray diffraction, hardness tester and ball-on-disc friction tester. It is found that the species originating from the Al-20%Sn alloy substrate and the electrolyte solution both participate in reaction and contribute to the composition of the coating, which results in the generated coating firmly adherent to the substrate. The composite ceramic coating can greatly improve the microhardness and tribological property of Al-20%Sn alloy.     

Fabrication of ZnO/Al2O3 core-shell nanostructures and crystalline Al2O3 nanotube

We have demonstrated the crystalline ZnO-Al₂O₃ core-shell nanowire structure by atomic layer deposition (ALD) at a temperature 100 °C. The core-shell structure could have potential applications in the fabrication of ZnO field effect transistor. After dissolving the ZnO core, shape defined, rigid and robust crystalline Al₂O₃ shelled nanostructures have been fabricated. Nanowire ZnO nanostructures have been replicated by alumina shell. This is one of the most effective techniques for producing core-shell or shell/hollowed nanostructures of any desired objects. The Al₂O₃ shelled nanostructures could have potential applications as space confined nanoreactors, drug delivery, nanofluidic channels and optical transmitting.     

Magnetic behavior of Co nanostructures deposited in porous Al2O3 templates

The magnetic behavior as a function of magnetic field and temperature of nanostructures of Co deposited on insulator templates of Al₂O₃ is presented. The results show that the granular Co was formed inside the pores and the characteristics of granular ferromagnetics, such as high saturation of the magnetization and paramagnetic behavior at high magnetic fields, were observed.     

Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

Plasma-assisted atomic layer deposition (PA-ALD) is more suitable than thermal atomic layer deposition (ALD) for mass production because of its faster growth rate. However, controlling surface damage caused by plasma during the PA-ALD process is a key issue. In this study, the passivation characteristics of Al₂O₃ layers deposited by PA-ALD were investigated with various O₂ plasma exposure times. The growth per cycle (GPC) during Al₂O₃ deposition was saturated at approximately 1.4?Å/cycle after an O₂ plasma exposure time of 1.5?s, and a refractive index of Al₂O₃ in the range of 1.65–1.67 was obtained. As the O₂ plasma exposure time increased in the Al₂O₃ deposition process, the passivation properties tended to deteriorate, and as the radio frequency (RF) power increased, the passivation uniformity and the thermal stability of the Al₂O₃ layer deteriorated. To study the Al₂O₃/Si interface characteristics, the capacitance-voltage (C-V) and the conductance-voltage (G-V) were measured using a mercury probe, and the fixed charge density (Q_f) and the interface trap density (D_it) were then extracted. The Q_f of the Al₂O₃ layer deposited on a Si wafer by PA-ALD was almost unaffected, but the D_it increased with O₂ plasma exposure time. In conclusion, as the O₂ plasma exposure time increased during Al₂O₃ layer deposition by PA-ALD, the Al₂O₃/Si interface characteristics deteriorated because of plasma surface damage.     

Al2O3增强的Co2-C98/Al2O3/Si异质结的光伏效应

随着能源危机的加剧,太阳能电池作为开发和利用太阳能的一种普遍形式, 日益受到世界各国的重视.随着太阳能电池向着高效率、薄膜化、无毒性和原材料丰富的方向发展, 单纯的硅系太阳能电池已经无法达到这样的要求,因此新的材料和工艺的开发利用迫在眉睫. 本文研究了碳材料在硅异质节上实现光伏效应的改善及其可能在太阳能电池上的应用. 采用脉冲激光沉积方法制备的Co₂-C₉₈/Al₂O₃/Si异质结构在标准日光照射 (AM1.5, 100 mW/cm²)条件下,可获得0.447 V的开路电压和18.75 mA/cm²的电流密度, 转换效率可达3.27%.通过电容电压特性和暗条件下的电输运性能测量, 证明了氧化铝层的引入不但对单晶硅的表面起到了物理钝化作用,减小了反向漏电流, 使异质结界面缺陷、界面能级和复合中心减少,还起到了场效应钝化作用, 增加了异质结界面的势垒高度,增加了开路电压,使异质结的光伏效应显著增强.     

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Sandwich-structure Al₂O₃/HfO₂/Al₂O₃ gate dielectric films were grown on ultra-thin silicon-on-insulator (SOI) substrates by vacuum electron beam evaporation (EB-PVD) method. AFM and TEM observations showed that the films remained amorphous even after post-annealing treatment at 950 °C with smooth surface and clean silicon interface. EDX- and XPS-analysis results revealed no silicate or silicide at the silicon interface. The equivalent oxide thickness was 3 nm and the dielectric constant was around 7.2, as determined by electrical measurements. A fixed charge density of 3 × 10¹⁰ cm⁻² and a leakage current of 5 × 10⁻⁷A/cm² at 2 V gate bias were achieved for Au/gate stack /Si/SiO₂/Si/Au MIS capacitors. Post-annealing treatment was found to effectively reduce trap density, but increase in annealing temperature did not made any significant difference in the electrical performance.     

Chemical quenching of positronium in Fe2O3/Al2O3 catalysts

Fe₂O₃/Al₂O₃ catalysts were prepared by solid state reaction method using α-Fe₂O₃ and γ-Al₂O₃ nano powders. The microstructure and surface properties of the catalyst were studied using positron lifetime and coincidence Doppler broadening annihilation radiation measurements. The positron lifetime spectrum shows four components. The two long lifetimes τ₃ and τ₄ are attributed to positronium annihilation in two types of pores distributed inside Al₂O₃ grain and between the grains, respectively. With increasing Fe₂O₃ content from 3 wt% to 40 wt%, the lifetime τ₃ keeps nearly unchanged, while the longest lifetime τ₄ shows decrease from 96 ns to 64 ns. Its intensity decreases drastically from 24% to less than 8%. The Doppler broadening S parameter shows also a continuous decrease. Further analysis of the Doppler broadening spectra reveals a decrease in the p-Ps intensity with increasing Fe₂O₃ content, which rules out the possibility of spin-conversion of positronium. Therefore the decrease of τ₄ is most probably due to the chemical quenching reaction of positronium with Fe ions on the surface of the large pores.     

Yb:Y2O3透明陶瓷的光学性能研究

介绍了一种基于纳米粉末真空烧结技术的新型固体激光材料——Yb：Y₂O₃多晶陶瓷的制备工艺、物理化学特性、能级结构和光谱特性，并与Yb：YAG单晶进行了对比.采用紧凑型有源镜激光器(CAMIL)的抽运方式，验证了Yb：Y₂O₃透明陶瓷的激光输出性能.在35W的最大抽运功率下，得到波长1078 nm，功率10.5 W 的连续激光输出，斜率效率达到37.5%.实验中还观察到激光输出波长随抽运功率增加而红移以及随输出耦合镜变化而漂移的现象.Yb：Y₂O₃多晶陶瓷是一种理想的激光材料，不仅具有与Yb：YAG单晶同样优秀的物理化学性能和光谱特性，而且其热导率和发射带宽约为Yb：YAG单晶的两倍，非常适合于高亮度激光器和超短脉冲激光器领域的发展应用. 关键词： 2O₃陶瓷')" href="#">Yb:Y₂O₃陶瓷 陶瓷激光器 透明陶瓷     

Mg，Ti共掺Al2O3透明多晶陶瓷光谱性能研究

采用传统无压烧结工艺制备Mg，Ti共掺透明氧化铝陶瓷，测定了其吸收光谱、荧光光谱和激发光谱，结果表明，由于Mg²⁺的电荷补偿，当Ti掺入量较小时，Ti主要以Ti⁴⁺形式存在，(Mg，Ti):Al₂O₃透明陶瓷只在250nm的紫外波段有吸收峰，为O^2-→Ti⁴⁺的电荷转移跃迁产生的吸收，并产生Ti⁴⁺离子在280—290nm和410—420nm的荧光发射峰     

电解等离子体法制备Al2O3陶瓷层及其特性研究

利用电弧喷铝并重熔后进行电解等离子体处理(EPP)的方法在Q235钢基体上制备出呈冶金结 合的Al₂O₃陶瓷层.利用XRD，SEM和EDS等手段对陶瓷层的成分和显 微组织进行了分析， 测定了陶瓷层的耐蚀性能和耐磨性能.实验结果表明，陶瓷层主要由α-Al₂O3，γ-Al₂O₃，θ-Al₂O₃以及一 些非晶相组成，组织致密，耐蚀性能和耐磨性能良好. 关键词： 电解等离子体处理 陶瓷层 复合技术 生长机理     

Ultrafast nonlinear optical properties of Bi2O3-B2O3-SiO2 oxide glass

The ultrafast nonlinear optical properties of Bi₂O₃-B₂O₃-SiO₂ oxide glass were investigated using a femtosecond optical Kerr shutter (OKS) at wavelength of 800 nm. The nonlinear response time of this Bi₂O₃-doped glass was measured to be <90 fs. The nonlinear refractive-index n₂ was estimated to be 1.6 × 10⁻¹⁴ cm²/W. Measurements for the dependence of Kerr signals on the polarization angle between the pump and probe beams showed that the Kerr signals induced by 30-fs pulse laser arose mainly from the photoinduced birefringence effect.     

Noise characteristics in low-impedance NiFe/Al2O3/NiFe tunnel junctions

We have studied the low-frequency voltage noise in micron-scale magnetic tunnel junctions. Random telegraph noise (RTN) dominates over 1/f noise in the switching region of magnetic hysteresis loops, suggesting that RTN comes mostly from local magnetization fluctuations. The temperature dependence of the 1/f noise and the size of the magnetic fluctuators responsible for the RTN are discussed.     

Al2O3绝缘栅AlGaN/GaN MOS-HEMT器件温度特性研究

采用原子层淀积(ALD)实现了10nm Al₂O₃为栅介质的高性能AlGaN/GaN金属氧化物半导体高电子迁移率晶体管(MOS-HEMT). 通过对MOS-HEMT器件和传统MES-HEMT器件室温特性的对比,验证了新型MOS-HEMT器件饱和电流和泄漏电流的优势. 通过分析MOS-HEMT器件在30—180℃之间特性的变化规律,与国内报道的传统MES-HEMT器件随温度退化程度对比,得出了器件饱和电流和跨导的退化主要是由于输运特性退化造成的,证明栅介质减小了引 关键词： 原子层淀积 AlGaN/GaN MOS-HEMT器件 温度特性     

Effect of hydroxyl groups on Er doped Bi2O3-B2O3-SiO2 glasses

A series of Er³⁺-doped Bi₂O₃-B₂O₃-SiO₂-Na₂O glasses with different hydroxyl groups were prepared and the interaction between the Er³⁺ ions and OH groups was investigated. Infrared spectra were measured in order to calculate the exact content of OH groups in samples. The observed increase of the fluorescence lifetime with the oxygen bubbling time has been related to the reduction in the OH content concentration evidenced by infrared (IR) absorption spectra, which confirmed that the OH groups were dominant quenching centers of excited Er³⁺ and a cause of concentration quenching of 1.5 μm band emission. Various nonradiative decay rates from ⁴I_13/2 of Er³⁺ with the change of OH content were determined from the fluorescence lifetimes and radiative decay rates, which were calculated on the basis of Judd-Ofelt theory.     

Farinfrared absorption in Al2O3 and MgO

Far-infrared absorption measurements performed in Al₂O₃ and MgO between 300 and 1 500 K with a Fourier scanning interferometer are reported. A temperature analysis of results based on a phonon self-energy model allows to assign the absorption in this region to 2- and 3-phonon difference processes. The contributions of these processes are separated and discussed. In Al₂O₃, the frequency dependence of the absorption is also analyzed. A good overall agreement between theory and experiment is evidenced.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.