Numerical modeling of photovoltaic efficiency of n‐type GaN nanowires on p‐type Si heterojunction

In this Letter, we investigate the photovoltaic properties of heterojunction solar cells based on n‐GaN nanowire (NW)/ p‐Si substrate heterostructures by means of numerical modeling. Antireflection properties of the NW array on the top of Si substrate were studied theoretically to show an order of magnitude enhancement in antireflection properties in comparison to the pure Si surface (2.5% vs. 33.8%). In order to determine the optimal morphology and doping levels of the structure with maximum possible efficiency we simulated its properties. The carried out simulation showed that the maximum efficiency should be more than 20% under AM1.5D illumination. The proposed design opens new perspectives and opportunities in the field of heterojunction tandem solar cell researches.

     

Enhancing the efficiency of TiO2–perovskite heterojunction solar cell via evaporating Cs2CO3 on TiO2

In a TiO₂–perovskite heterojunction solar cell (TiO₂–PHSC), besides the perovskite CH₃NH₃PbX₃, TiO₂ as one side of the TiO₂/CH₃NH₃PbX₃ heterojunction also plays an important role in the photovoltaic effect. In order to improve the performance of the TiO₂–PHSC with the structure of glass/FTO/compact TiO₂/mesoporous TiO₂/CH₃NH₃PbI_3–xCl_x /poly‐TPD (poly(N,N ′‐bis(4‐butylphenyl)‐N,N ′‐bis(phenyl)benzidine))/Au, a 2 nanometer thick Cs₂CO₃ layer is thermally evaporated on the mesoporous TiO₂ layer. The short‐circuit current density (J_sc) raises from 17.7 mA cm^–2 to 18.9 mA cm^–2, the open‐circuit voltage (V_oc) from 0.81 V to 0.87 V, and the fill factor (FF) from 55.2% to 67.3%; as a result, the power conservation efficiency (PCE) increases from 8.0% to 11.1% under AM 1.5G solar illumination (100 mW cm^–2). Moreover, in a TiO₂–PHSC free of mesoporous TiO₂, where Cs₂CO₃ is evaporated on the compact TiO₂ layer, the J_sc, V_oc, FF and PCE values increase from 16.0 mA cm^–2, 0.83 V, 50.8% and 6.7% to 17.9 mA cm^–2, 0.90 V, 59.3%, and 9.5%, respectively. The reasons of the PCE increase for either the first kind of TiO₂–PHSC or the mesoporous‐TiO₂‐free TiO₂–PHSC with a nanometer‐thick Cs₂CO₃ layer on mesoporous TiO₂ or compact TiO₂ are discussed. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

The effect of Na on the electronic properties of Cu(In,Ga)Se2 thin films: A local‐probe study

We investigated the effect of Na incorporation on the electronic properties of polycrystalline CuIn_0.7Ga_0.3Se₂ thin films using scanning tunneling microscopy and spectroscopy. The tunneling spectra indicate a reduced in‐gap density of states at grain boundaries and reveal a downward band‐bending in Na‐rich grain boundaries with respect to the adjacent grains, in agreement with our conductive atomic force microscopy data. It thus appears that Na passivates deep‐level defects at grain boundaries and induces a downward band‐bending there. Moreover, we provide evidence that Na passivates mainly Cu vacancy related defects. We suggest that the grain‐boundary passivation, which reduces the recombination rate of photogenerated carriers, is at least of major importance in the well known Na‐induced improvement in the efficiency of the corresponding solar cells. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)