Trapped charge‐induced pyroelectric‐like transient response in single high‐resistivity Sb2Se3 nanowires

Dynamic scanning photocurrent microscopy was applied to Sb₂Se₃ crystalline single nanowires (NWs) to analyze their transient photocurrent responses. These NWs exhibited switching behavior with rapid rise and decay times upon illumination by laser pulses. The estimated spectral responsivity and external quantum efficiency for a freshly‐prepared NW at a bias voltage of 0.3 V and excitation wavelength of 488 nm were ～16.9 mA/W and ～42.9%, respectively. A pyroelectric‐like current transient was observed with reduced spectral responsivity when nonpolar Sb₂Se₃ single‐crystalline NWs were excited by laser pulses. Because Sb₂Se₃ NWs were nonpyroelectric or ferroelectric, the pyroelectric‐like current could possibly be attributed to temperature dependent nonlinear space‐charge distributions. Defects produced by the external electrical bias generated and re‐distributed space charges in the NWs. As a result, the temperature dependent inhomogeneous electric field led to nonlinear expansions or contractions of the lattice (electrostriction) that can produce pyroelectric current. We obtained a lower bound of equivalent pyroelectric coefficient α ≥ 60.09 μC/m² K from these materials by fitting the electrical transients. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

High‐gain Zn1–xMgx O‐based ultraviolet photodetectors on Al2O3 and LiGaO2 substrates

We report the fabrication and characterization of highly responsive ZnMgO‐based ultraviolet (UV) photodetectors in the metal–semiconductor–metal (MSM) configuration for solar‐blind/visible‐blind optoelectronic application. MSM devices were fabricated from wurtzite Zn_1–xMg_x O/ZnO (x ～ 0.44) thin‐film heterostructures grown on sapphire (α‐Al₂O₃) substrates and w‐Zn_1–xMg_x O (x ～ 0.08), grown on nearly lattice‐matched lithium gallate (LiGaO₂) substrates, both by radio‐frequency plasma‐assisted molecular beam epitaxy (PAMBE). Thin film properties were studied by AFM, XRD, and optical transmission spectra, while MSM device performance was analyzed by spectral photoresponse and current–voltage techniques. Under biased conditions, α‐Al₂O₃ grown devices exhibit peak responsivity of ～7.6 A/W at 280 nm while LiGaO₂ grown samples demonstrate peak performance of ～119.3 A/W, albeit in the UV‐A regime (～324 nm). High photoconductive gains (76, 525) and spectral rejection ratios (～10³, ～10⁴) were obtained for devices grown on α‐Al₂O₃ and LiGaO₂, respectively. Exemplary device performance was ascribed to high material quality and in the case of lattice‐matched LiGaO₂ films, decreased photocarrier trapping probability, presumably due to low‐density of dislocation defects. To the best of our knowledge, these results represent the highest performing ZnO‐based photodetectors on LiGaO₂ yet fabricated, and demonstrate both the feasibility and substantial enhancement of photodetector device performance via growth on lattice‐matched substrates. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Si homojunction structured near-infrared laser based on a phonon-assisted process

We fabricated several near-infrared Si laser devices (wavelength ～1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 μm and a thickness of 2 μm, with two cleaved facets, and the resonator lengths were 250–1000 μm. The oscillation threshold currents of these Si lasers were 50–60 mA. From near-field and far-field images of the optical radiation pattern, we observed the high directivity which is characteristic of a laser beam. Typical values of the threshold current density for laser oscillation, the ratio of powers in the TE polarization and TM polarization during oscillation, the optical output power at a current of 60 mA, and the external differential quantum efficiency were 1.1–2.0 kA/cm², 8:1, 50 μW, and 1 %, respectively.     

Quantum design strategy pushes high‐power vertical‐external‐cavity surface‐emitting lasers beyond 100 W

Combining rigorous quantum epitaxial design, highly accurate growth, novel processing and thermal management pushes the output power of single chip vertical‐external‐cavity surface‐emitting lasers (VECSELs) beyond the 100 W milestone.     

硅基光电集成器件研究进展

随着器件结构与制作工艺的不断创新与完善，硅基发光器件已经可以实现室温下的有效工作，外量子效率可达到0．1％；低功耗的硅基高速调制器件的调制速率达到1GHz以上；而硅基光探测器对1300nm与1550nm波长的探测响应度也已分别达到了0．16mA／W和0．08mA／W．文章对硅基光电器件的研究进展情况进行了概述，并着重对几种器件的结构及工作原理进行了分析．     

Simultaneous brightness enhancement and wavelength conversion to the eye‐safe region in a high‐power diamond Raman laser

Brightness enhancement in an external cavity diamond Raman laser designed for high power conversion of a neodymium (1064 nm) laser to the eye‐safe spectral region is reported. Using a multimode input beam pulsed at 36 kHz pulse repetition frequency, 16.2 W with 40% overall conversion efficiency was obtained at the second Stokes wavelength of 1485 nm. The output beam had a quality factor of which is a factor of 2.7 times lower than that of the input beam, resulting in a higher overall brightness. The output power, brightness, and brightness enhancement obtained represent significant advances in performance for Raman lasers as well as other competing kHz‐pulsed eye‐safe technologies.     

Thin film optimization design of organic–inorganic hybrids for waveguide high‐rejection optical filters

We report the fabrication of transparent, low surface roughness (<0.1 nm), and low‐loss (1.5 ± 0.2 dB cm^–1, 532 nm) thin films of organic–inorganic hybrids with controlled refractive index values stable under aging. High‐rejection optical filters based on first‐order Bragg gratings inscribed in channel waveguides were fabricated using UV‐laser writing. Their high‐rejection figure of merit (～24 dB) is the best value found until now for organic–inorganic hybrids reinforcing the potential of sol–gel technology in the integration of optoelectronic components based on hybrid materials, namely in the fabrication of cost‐effective integrated optics devices. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature–Light Dual‐Responsive Au@PNIPAm Core‐Shell Microgel‐Based Optical Devices

Au nanoparticle (AuNP) core particles coated with a poly(N‐isopropylacrylamide) (pNIPAm) shell (Au@pNIPAm) are synthesized by seed mediated free radical polymerization. Subsequently, a temperature–light‐responsive photonic device is fabricated by sandwiching the Au@pNIPAm particles between two thin layers of Au. The optical device exhibits visual color and characteristic multipeak reflectance spectra, where peak position is primarily determined by the distance between two Au layers. Dual responsivities of the photonic device are achieved by combining the photothermal effect of AuNPs core (localized surface plasmon resonance (LSPR) effect) and the temperature responsivity of the pNIPAm shell. That is, the pNIPAm shell collapses as the temperature is increased above pNIPAm's lower critical solution temperature, either by direct heat input or heat generated by AuNPs' LSPR effect. To investigate the effect of AuNPs distribution in the microgels on the devices' photothermal responsivity, the Au@pNIPAm microgel‐based etalon devices are compared with that fabricated by AuNP‐doped pNIPAm‐based microgels; in terms of response kinetics and optical spectrum homogeneity. The uniform Au@pNIPAm microgel‐based devices show a fast response and exhibit a comparatively homogeneous spectrum over the whole slide. These materials can potentially find use in drug delivery systems, active optics, and soft robotics.     

Spectral dependence of light extraction efficiency of high‐power III‐nitride light‐emitting diodes

Using the recently suggested method of processing the data on external quantum efficiency as a function of output optical power, we have estimated the dependence of light extraction efficiency of high‐power light‐emitting diodes (LEDs) on their emission wavelength varied between 425 nm and 540 nm. The extraction efficiency is found to increase with the wavelength from ～80% to ～85% in this spectral range and to correlate with the wavelength dependence of reflectivity of the large‐area p‐electrode being the essential unit of the LED chip design. The correlation found identifies the incomplete reflection of emitted light from the electrode as the major mechanism eventually controlling the spectral dependence of the efficiency of light extraction from the LEDs.

     

Recent progress in the development of type II interband cascade lasers

Type-II interband cascade lasers combine the advantage of an interband optical transition with interband tunneling to enable the cascading of type-II quantum well active regions as is done in type-I quantum cascade laser. The relatively high radiative efficiency resulting from interband optical transitions translates into very low-threshold current densities, and when combined with the high quantum efficiency of cascade lasers, this diode laser design has the potential to operate under cw conditions at room temperature with high output power. Experimental results have already demonstrated some of this potential including high differential external quantum efficiency (>600%), high peak output power (6 W/facet at 80 K), high cw power conversion efficiency (>17% at 80 K), and operation at 300 K under pulsed conditions. Recent work aimed at reducing device thermal resistance and increasing cw operating temperature is reviewed including the demonstration of significant reductions in thermal resistance (averaging 25 K/W or 40% for 1-mm-long devices), 80 K cw operation at 3.4 μm with high-power conversion efficiency (23%) and high differential external quantum efficiency (532%), and cw operation up to 214 K.     

High‐Responsivity Photodetectors Based on Formamidinium Lead Halide Perovskite Quantum Dot–Graphene Hybrid

Highly performance photodetector requires a wide range of responses of the incident photons and converts them to electrical signals efficiently. Here, a photodetector based on formamidinium lead halide perovskite quantum dots (e.g., FAPbBr₃ QDs)–graphene hybrid, aiming to take the both advantages of the two constituents. The FAPbBr₃ QD–graphene layer not only benefits from the high mobility and wide spectral absorption of the graphene material but also from the long charge carrier lifetime and low dark carrier concentration of the FAPbBr₃ QDs. The photodetector based on FAPbBr₃ QD–graphene hybrid exhibits a broad spectral photoresponse ranging from 405 to 980 nm. A photoresponsivity of 1.15 × 10⁵AW⁻¹ and an external quantum efficiency as high as 3.42 × 10⁷% are obtained under an illumination power of 3 µW at 520 nm wavelength. In detail, a high responsivity is achieved in 405–538 nm, while a relatively low but fast response is observed in 538–980 nm. The photoelectric conversion mechanism of this hybrid photodetector is investigated in the view of built‐in electric field from the QD–graphene contact which improves the photoconductive gain.     

A novel method degrading the combined effect of FWM and ASE noise in WDM systems containing in-line optical amplifiers

In this paper, a novel method degrading the combined effect of four-wave mixing (FWM) and amplified spontaneous emission (ASE) noise of the amplifier on the most heavily affected channel in an equally channel spaced wavelength division multiplexing (WDM) system containing in-line optical amplifiers is proposed. FWM effect is directly related to input powers of channels. So, FWM effect can be degraded by controlling channel input powers. In the proposed method, varying the input power of each channel in an optical fiber, the output optical signal to noise ratio (OSNR) values are evaluated and input powers of all channels are optimized in order to maximize the OSNR value of the channel having the lowest OSNR. To interpret the results obtained, output OSNR values for the minimum optical input power launched to the system by each channel are also computed. Being compared to the computed results for minimum optical input powers, the lowest output OSNR value among all channels for optimized input powers shows a 5.1867 dB increase in a 5-channel system, a 3.5988 dB increase in a 9-channel system, a 3.0855 dB increase in a 15-channel system and a 1.6795 dB increase for a 21-channel system. Furthermore, output OSNR values of all channels exhibit a significant increase.     

Dual‐wavelength monolithic Y‐branch distributed Bragg reflection diode laser at 671 nm suitable for shifted excitation Raman difference spectroscopy

A dual‐wavelength monolithic Y‐branch distributed Bragg reflection (DBR) diode laser at 671 nm is presented. The device is realized with deeply etched surface DBR gratings by one‐step epitaxy. A maximum optical output power of 110 mW is obtained in cw‐operation for each laser cavity. The emission wavelengths of the device are 670.5 nm and 671.0 nm with a spectral width of 13 pm (0.3 cm⁻¹) and a mean spectral distance of 0.46 nm (10.2 cm⁻¹) over the whole operating range. Together with a free running power stability of ± 1.1% this most compact diode laser is ideally suited as an excitation light source for portable shifted excitation Raman difference spectroscopy (SERDS).     

Multiwatt level output powers from a tunable fiber optical parametric oscillator

We present an all-fiber high average power fiber optical parametric oscillator based on standard telecommunications dispersion-shifted fiber. The output of the oscillator is continuously tunable out to ±28 THz from the pump wavelength. The average power of the oscillator's output is in excess of 1.9?W in each sideband out to ±25 THz detuning. Between 5 and 14 THz detuning, the average power of the Stokes output is in excess of 3.8 W.     

Yb‐fiber‐based,high‐average‐power,high‐repetition‐rate,picosecond source at 2.1 µm

We report a high‐repetition‐rate picosecond fiber‐based source at 2.1 µm offering exceptional performance capabilities over existing lasers near this wavelength, providing high average power and efficiency together with excellent spectral, power and beam pointing stability, in high spatial beam quality. This new source is based on a near‐degenerate MgO:PPLN optical parametric oscillator (OPO) pumped by an Yb‐fiber laser at 1064 nm, and incorporating a diffraction grating for spectral control. The device provides as much as 7.1 W of average power at 2.1 µm for a pump power of 18 W at an extraction efficiency of 39.4% in pulses of 20 ps at 79.3 MHz. The output exhibits passive power stability better than 1% rms over 15 hours, and a beam pointing stability ∼40 µrad over 1 hour, in high spatial quality with M² ∼ 3.5. The output beam is linearly polarized and the pulse train has an amplitude stability better than 3.4% rms over 2 µsec. Radio‐frequency measurements of the output pulse train also confirm high temporal stability and low timing jitter, indicating that the source is ideal for variety of applications including pumping long‐wavelength mid‐infrared OPOs. Photograph shows the temperature‐controlled, 50‐mm‐long MgO:PPLN crystal inside the cavity, used as nonlinear gain medium in the picosecond source operating at 2.1 µm. The visible light is the result of non‐phase‐matched second harmonic generation of the pump beam in the MgO:PPLN crystal.

     

Efficient and long‐life green light‐emitting diodes comprising tridentate thiol capped quantum dots

In this paper, the green quantum dots capped with the ligand, tris(mercaptomethyl)nonane (TMMN), are fabricated as the light‐emitting layer for efficient and bright light‐emitting diodes. These TMMN‐capped quantum dots exhibit well‐preserved photoluminescence properties with quantum yields of ∼90% after ligand exchange. The light‐emitting diodes based on TMMN‐capped quantum dots are reported with a maximum external quantum efficiency of 16.5% corresponding to a power efficiency and current efficiency of 57.6 lm W^–1 and 70.1 cd A^–1, respectively. The devices exhibit high color stability that is not markedly affected by the increase of applied voltage, thus leading to a high color reproducibility. Most importantly, the devices exhibit high environmental stability. For the highest luminance devices (with emitting layer thickness of 25 nm) and the highest power efficiency devices (with emitting layer thickness of 38 nm), the lifetimes are > 480 000 h and > 110 000 h, respectively.

     

Simple design of an edge-emitting diode laser for preventing spatial multimoding via thermal lensing

The parameters of a diode-laser structure composed of a pair of built-in high-index regions for providing stable, single-spatial-mode operation to high cw powers are numerically found. A three-dimensional numerical code has been implemented that takes into account carrier diffusion in the quantum well and thermal lensing. The laser characteristics are calculated as functions of the above-threshold drive level. Within the simulation, higher-order optical modes on a "frozen background" are computed via the Arnoldi algorithm. Then, for a 6-μm-wide low-index core and 2-3-mm-long devices, stable single-mode operation up to multiwatt-level (2-3 W) cw output power is predicted.     

A non‐destructive approach for doping profiles characterization by micro‐Raman spectroscopy: the case of B‐implanted Ge

B‐implanted Ge samples have been investigated by micro‐Raman spectroscopy under different excitation wavelengths, with the aim of gaining insights about the B distribution at different depths beneath the sample surface. The intensities, observed under the different excitation wavelengths, of the B–Ge Raman peak at about 545 cm⁻¹, which is due to the local vibrational mode of the substitutional B atoms in the Ge matrix, have been used to calibrate the optical absorption lengths in B‐implanted Ge. Then, by using these calibrated values, a very sharp correlation between the spectral features of the Ge–Ge Raman peak at ~300 cm⁻¹ and the content of substitutional B atoms has been derived. Accordingly, a non‐destructive approach, based on micro‐Raman spectroscopy under different excitation wavelengths, is presented to estimate, at least at the lowest depths, the carrier concentration profiles from the spectral features of the Ge–Ge Raman peak. Copyright © 2014 John Wiley & Sons, Ltd.     

Three‐Dimensional,Time‐Resolved Profiling of Ferroelectric Domain Wall Dynamics by Spectral‐Domain Optical Coherence Tomography

We apply here spectral‐domain optical coherence tomography (SD‐OCT) for the precise detection and temporal tracking of ferroelectric domain walls (DWs) in magnesium‐doped periodically poled lithium niobate (Mg:PPLN). We reproducibly map static DWs at an axial (depth) resolution down to ～ 0.6 μm, being located up to 0.5 mm well inside the single crystalline Mg:PPLN sample. We show that a full 3‐dimensional (3D) reconstruction of the DW geometry is possible from the collected data, when applying a special algorithm that accounts for the nonlinear optical dispersion of the material. Our OCT investigation provides valuable reference information on the DWs’ polarization charge distribution, which is known to be the key to the electrical conductivity of ferroelectric DWs in such systems. Hence, we carefully analyze the SD‐OCT signal dependence both when varying the direction of incident polarization, and when applying electrical fields along the polar axis. Surprisingly, the large backreflection intensities recorded under extraordinary polarization are not affected by any electrical field, at least for field strengths below the switching threshold, while no significant signals above noise floor are detected under ordinary polarization. Finally, we employed the high‐speed SD‐OCT setup for the real‐time DW tracking upon ferroelectric domain switching under high external fields.     

基于光谱线性拟合的宽波段光源波动补偿方法

宽波段光源在工作过程中,光强通常会随供电电源输出功率的变化而波动。宽波段光源波段内各个波长的光谱强度将会发生不同程度的波动。为解决光源光强波动时其波段内各个波长光谱强度的补偿问题,提出了一种基于光谱线性拟合的补偿方法。使用这种方法,只需测量光源波段光强的变化,就可以补偿各个波长光谱强度的波动。通过分析理想黑体全波段辐射出射度与光谱辐射出射度的近似线性关系。建立了宽波段光源波段光强与光谱强度的线性模型。实验装置主要由卤素灯珠、光源电源、光阑、光谱仪及计算机构成。调节电源的输出功率,得到一组卤素灯珠在不同输入功率下的相对光谱强度。测量不同功率下卤素灯珠光谱强度来验证该方法补偿效果。按线性关系拟合了卤素灯珠光谱强度与其波段光强关系式,并分析了拟合误差。实验表明：卤素灯珠的光谱强度与其波段光强具有很好的线性关系,可以用波段光强按线性关系来补偿其光谱强度的波动。随着卤素灯珠输入功率的增大,补偿后的光谱强度的相对误差绝对值下降。在卤素灯珠输入功率范围内,使用该方法补偿的光谱强度在绝大部分(92%)波长下相对误差绝对值可在5%以内。