ZnO-based terahertz quantum cascade lasers

High-power terahertz sources operating at room-temperature are promising for many applications such as explosive materials detection, non-invasive medical imaging, and high speed telecommunication. Here we report the results of a simulation study, which shows the significantly improved performance of room-temperature terahertz quantum cascade lasers (THz QCLs) based on a ZnMgO/ZnO material system employing a 2-well design scheme with variable barrier heights and a delta-doped injector well. We found that by varying and optimizing constituent layer widths and doping level of the injector well, high power performance of THz QCLs can be achieved at room temperature: optical gain and radiation frequency is varied from 108 cm^?1 @ 2.18 THz to 300 cm^?1 @ 4.96 THz. These results show that among II–VI compounds the ZnMgO/ZnO material system is optimally suited for high-performance room-temperature THz QCLs.     

Performance optimization for terahertz quantum cascade laser at higher temperature using genetic algorithm

The aim of this work is to establish an approach for obtaining improved design parameters for high temperature operation of terahertz quantum cascade lasers using a multi-objective evolutionary algorithm. For studying the lasing conditions of a quantum cascade laser, a self-consistent model is adopted. This model uses standard wave function approximation and effective mass approximation with relevant scattering mechanisms to solve Schrodinger’s equation for the cascaded quantum wells. Fermi’s Golden Rule is then used to calculate the corresponding lifetime of each eigen states. To describe the coherent evolution of wave functions and phase breaking, density matrix formalism is employed. Subsequently, laser rate equations are used for calculating the parameters related to electronic transport in the device. These parameters are then utilized for investigating the temperature dependence of existing terahertz quantum cascade lasers. Finally, using an optimization technique based on Genetic algorithm, design parameters for resonant-phonon quantum cascade laser are obtained within the terahertz frequency range. The results illustrate that this optimization process can offer improvement in the performance of quantum cascade lasers in terahertz region at an elevated temperature. Moreover, the results also reveal that significant increase in operating temperature of a resonant phonon terahertz QCL is unlikely and hence novel design approaches should be considered for operating THz QCLs at room temperature.     

Potential‐inserted quantum well design for quantum cascade terahertz lasers

We report on a new design of terahertz quantum cascade laser based on a single, potential‐inserted quantum well active region. The quantum well properties are engineered through single monolayer InAs inserts. The modeling is based on atomistic, spds* tight‐binding calculations, and performances are compared to that of the classical three‐well design. We obtain a 100% increase of the oscillator strength per unit length, while maintaining a high, nearly temperature‐independent contrast between phonon‐induced relaxation times of the upper and lower lasing states. The improved performances are expected to allow THz lasing at room temperature.     

2.9THz束缚态向连续态跃迁量子级联激光器研制

采用气源分子束外延技术生长了GaAs/AlGaAs束缚态向连续 态跃迁的太赫兹量子级联激光器材料, 基于半绝缘等离子体波导工艺制作了太赫兹量子级联激光器. 测量了激光器的发射光谱和功率-电流-电压关系曲线, 研究了器件的激光特性. 器件激射频率约2.95 THz, 脉冲模式下, 最高工作温度为67 K. 连续波模式下, 阈值电流密度最低为230 A/cm², 最大光输出功率1.2 mW, 最高工作温度为30 K. 关键词： 太赫兹 量子级联激光器 分子束外延 波导     

基于太赫兹量子级联激光器的无线信号传输的实现

文章采用连续波激射的太赫兹量子级联激光器(THz QCL) 为发射端、光谱匹配的THz量子阱探测器(THz QWP) 为接收端, 搭建了基于THz波的无线传输演示系统. 测量并分析了该演示系统的传输带宽. 采用搭建的无线传输系统演示了基于4.13 THz电磁波的图片文件的无线传输过程, 得到了与源文件一致的结果, 验证了采用THz QCL和THz QWP进行THz信号无线传输的可行性.最后, 分析了演示系统的传输速率, 给出了提高系统传输速率的方法.     

Continuous‐wave vertically emitting photonic crystal terahertz laser

Compact semiconductor light sources with high performance continuous‐wave (CW) and single mode operation are highly demanded for many applications in the terahertz (THz) frequency range. Distributed feedback (DFB) and photonic crystal (PhC) quantum cascade (QC) lasers are amongst the leading candidates in this field. Absorbing boundary condition is a commonly used method to control the optical performance of a laser in double‐metal confinement. However, this approach increases the total loss in the device and results in a large threshold current density, limiting the CW maximum output power and operating temperature. In this letter, a robust surface emitting continuous‐wave terahertz QC laser is realized in a two‐dimensional PhC structure by a second order Bragg grating extractor that simultaneously provides the boundary condition necessary for mode selection. This results in a 3.12 THz single mode CW operation with a 3 mW output power and a maximum operation temperature (T_max) of 100 K. Also, a highly collimated far‐field pattern is demonstrated, which is an important step towards real world applications.     

太赫兹量子级联激光器中有源区上激发态电子向高能级泄漏的研究

利用热力学统计理论和激光器输出特性理论,建立了太赫兹量子级联激光器(THz QCL)有源区中上激发态电子往更高能级电子态泄漏的计算模型,以输出功率度量电子泄漏程度研究分析了晶格温度和量子阱势垒高度对电子泄漏的影响.数值仿真结果表明,晶格温度上升会加剧电子泄漏,并且电子从上激发态泄漏到束缚态的数量大于泄漏到阱外连续态,同时温度的上升也会降低激光输出功率.增加量子阱势垒高度能抑制电子泄漏,并且有源区量子阱结构中存在一个最优量子阱势垒高度. THz QCL经过最优量子阱势垒高度优化后,工作温度得到提升,其输出功率相比于以往的结果也有所提高.研究结果对优化THz QCL有源区结构、抑制电子泄漏和改善激光器输出特性有指导作用.     

掺杂BaTiO3/SrTiO3多层膜与太赫兹波相互作用

掺杂半导体中的载流子吸收在THz波段非常明显,其相互作用研究是研制THz通信中的关键器件之一的基础。采用氟化氪（KrF）脉冲准分子激光烧蚀沉积（PLD）技术,制备了Ni掺杂BaTiO3/SrTiO3多层膜。基于辐射频率为3.09 THz、脉冲功率为10 mW量级的THz 量子级联激光器(QCL)光源研究了太赫兹波在Ni掺杂BaTiO3/SrTiO3多层膜中的传输,发现损耗主要是Ni颗粒的非共振吸收导致。     

Integrated injection seeded terahertz source and amplifier for time-domain spectroscopy

We used a terahertz (THz) quantum cascade laser (QCL) as an integrated injection seeded source and amplifier for THz time-domain spectroscopy. A THz input pulse is generated inside a QCL by illuminating the laser facet with a near-IR pulse from a femtosecond laser and amplified using gain switching. The THz output from the QCL is found to saturate upon increasing the amplitude of the THz input power, which indicates that the QCL is operating in an injection seeded regime.     

Short Terahertz Pulse Generation from a Dispersion Compensated Modelocked Semiconductor Laser

Dispersion compensation is vital for the generation of ultrashort and single cycle pulses from modelocked lasers across the electromagnetic spectrum. It is typically based on addition of an extra dispersive element to the laser cavity that introduces a chromatic dispersion opposite to that of the gain medium. To date, however, no dispersion compensation schemes have been successfully applied to terahertz (THz) quantum cascade lasers for short and stable pulse generation in the THz range. In this work, a monolithic on‐chip compensation scheme is realized for a modelocked QCL, permitting THz pulses to be considerably shortened from 16ps to 4ps. This is based on the realization of a small coupled cavity resonator that acts as an ‘off resonance’ Gires‐Tournois interferometer (GTI), permitting large THz spectral bandwidths to be compensated. This novel application of a GTI opens up a direct and simple route to sub‐picosecond and single cycle pulses in the THz range from a compact semiconductor source.     

Si/SiGe量子级联激光器的能带设计

详细论述Si/SiGe量子级联激光器的工作原理，通过对比找到一组合适的Si，Ge和SiGe合金的能带参数，进而应用6×6 k·p方法计算了不同阱宽、不同Ge组分Si/Si_1-xGe_x/Si量子阱价带量子化的空穴能级本征值及其色散关系，分析Si/Si_1-xGe_x/Si量子阱空穴态能级间距随阱宽和组分的变化规律，最后应用计算结果讨论了Si/SiGe量子级联激光器有源区的能带设计，有益于优化Si /SiGe量子级联激光器结构. 关键词： 硅锗材料 量子级联激光器 子带跃迁 k·p方法')" href="#">k·p方法     

Terahertz imaging through self-mixing in a quantum cascade laser

We demonstrate terahertz (THz) frequency imaging using a single quantum cascade laser (QCL) device for both generation and sensing of THz radiation. Detection is achieved by utilizing the effect of self-mixing in the THz QCL, and, specifically, by monitoring perturbations to the voltage across the QCL, induced by light reflected from an external object back into the laser cavity. Self-mixing imaging offers high sensitivity, a potentially fast response, and a simple, compact optical design, and we show that it can be used to obtain high-resolution reflection images of exemplar structures.     

Photonic engineering of surface‐emitting terahertz quantum cascade lasers

Various resonators for surface emission are reviewed that have recently been developed to improve radiative‐ and collection‐efficiencies of terahertz quantum cascade lasers (THz QCL). While the fabrication of waveguides for long wavelengths is challenging in terms of molecular beam epitaxy, long wavelengths also provide a wonderful testbed for new photonics structure concepts, since these can be easily produced by conventional optical lithography because of the typically large size of the required features. This led to novel geometries, like one‐ and two‐dimensional non‐periodic photonic crystals, or circular gratings for microdisk‐ and ring‐lasers, which are all implemented by simply patterning the top metal cladding of a metal‐metal waveguide. The modeling of such resonators with the finite element method is also described, highlighting the importance of this tool for the engineering of surface losses and far‐field patterns.     

High power room-temperature design of terahertz quantum cascade laser based on difference frequency generation

Terahertz (THz) quantum cascade lasers (QCLs) are key elements for high-power terahertz beam generation for integrated applications. In this study, we design a highly nonlinear THz-QCL active region in order to increase the output power of the device especially at lower THz frequencies based on difference frequency generation (DFG) process. It has been shown that the output power increases for a 3.2 THz structure up to 1.2 μW at room temperature in comparison with the reported power of P = 0.3 μW in [1]. The mid-IR wavelengths associated with this laser are λ₁ = 12.12 μm and λ₂ = 13.93 μm, which are mixed in a medium with high second-order nonlinearity. A similar approach has been used to design an active region with THz frequency of 1.8 THz. The output power of this structure reaches to 1 μW at room temperature where the mid-IR wavelengths are λ₁ = 12.05 μm, λ₂ = 12.99 μm.     

Near‐room‐temperature photon‐noise‐limited quantum well infrared photodetector

With the modern development of infrared laser sources such as broadly tunable quantum cascade lasers and frequency combs, applications of infrared laser spectroscopy are expected to become widespread. Consequently, convenient infrared detectors are needed, having properties such as fast response, high efficiency, and room‐temperature operation. This work investigated conditions to achieve near‐room‐temperature photon‐noise‐limited performance of quantum well infrared photodetectors (QWIPs), in particular the laser power requirement. Both model simulation and experimental verification were carried out. At 300 K, it is shown that the ideal performance can be reached for typical QWIP designs up to a detection wavelength of 10 µm. At 250 K, which is easily reachable with a thermoelectric Peltier cooler, the ideal performance can be reached up to 12 µm. QWIPs are therefore suitable for detection and sensing applications with devices operating up to or near room temperature.     

Terahertz Quantum Cascade Laser at 3.39THz

We demonstrate the growth of terahertz quantum cascade laser （THz QCL） by gas source molecular beam epitaxy. X-ray diffraction and cross-sectional transmission electron microscopic measurements show the high crystalline quality of the THz QCL active region, From the cross-sectional transmission electron microscopy image, sharp interfaces are observed and the deduced cascade period thickness is consistent with the result of x-ray diffraction. The test device is lasing at 3.39THz and operating up to lOOK in pulsed mode. At IOK, the maximum output power is greater than 1 mW with a threshold current density of 738 A/cm^2.     

Detection of a directly modulated terahertz light with quantum-well photodetector

We demonstrate a wireless transmission link at 3.9 THz over a distance of 0.5 m by employing a terahertz （Hz） quantum-cascade laser （QCL） and a THz quantum-well photodetector （QWP）. We make direct voltage modulation of the THz QCL and use a spectral-matched THz QWP to detect the modulated THz light from the laser. The small signal model and a direct voltage modulation scheme of the laser are presented. A square wave up to 30 MHz is added to the laser and detected by the THz detector. The bandwidth limit of the wireless link is also discussed.     

THz radiation generation via the interaction of two‐colour ultra‐short laser pulses with SO2 and NH3 gases

In this work, using a two‐dimensional particle‐in‐cell Monte Carlo collision computation method, terahertz (THz) radiation generation via the interaction of two‐colour, ultra‐short, high‐power laser pulses with the polyatomic molecular gases sulphur dioxide (SO₂) and ammonia (NH₃) is examined. The influence of SO₂ and NH₃ pressures and two‐colour laser pulse parameters, i.e., pulse shape, pulse duration, and beam waist, on the THz radiation generation is studied. It is shown that the THz signal generation from SO₂ and NH₃ increases with the background gas pressure. It is seen that the THz emission intensity for both gases at higher laser pulse durations is higher. Moreover, for these polyatomic gases, the plasma current density increases with increase in the laser pulse beam waist. A more powerful THz radiation intensity with a larger time to peak of the plasma current density is observed for SO₂ compared to NH₃. In addition, many THz signals with small intensities are observed for both polyatomic gases. It is seen that for both SO₂ and NH₃ the generated THz spectral intensity is higher at higher gas pressures.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

基于太赫兹量子阱探测器的太赫兹量子级联激光器发射谱研究

采用一个光谱匹配的太赫兹(THz)量子阱探测器(QWP)研究了一激射频率约为41 THz的THz量子级联激光器(QCL)在不同驱动电流下的发射谱,分析了测量得到的发射谱谱型和谱峰位置,根据测量的发射谱估算了太赫兹量子级联激光器发射功率随驱动电流变化的情况,从而得到了THz QCL激射的电流密度范围及其阈值电流密度.文中还研究了THz QWP在不同温度下对THz QCL 激光辐射的响应特性.研究结果表明,THz QWP在表征THz QCL的发射谱方面是一种很好的探测器,并有望成为未来THz通信中的接收装置. 关键词： 太赫兹量子阱探测器 太赫兹量子级联激光器 太赫兹通信 Fourier变换红外光谱