Spin configuration transformation in laterally coupled few-electron artificial molecules

Artificial molecules, namely laterally coupled quantum dots with a three-dimensional spherical confinement potential well of radius R and depth V ₀, were studied by the unrestricted Hartree-Fock-Roothaan (UHFR) method. By varying the distance d between the centers of the two coupled quantum dots, the transition from the strong coupling situation to the weak one is realized. Hund's rule, suitable for a single quantum dot is destroyed in certain conditions in the artificial molecule. For example, in the few-electron system of the strongly coupled quantum-dot molecule, a transformation of spin configuration has been found. Received 8 March 2002 / Received in final form 29 May 2002 Published online 17 September 2002     

Single electron tunneling at large conductance: The semiclassical approach

We study the linear conductance of single electron devices showing Coulomb blockade phenomena. Our approach is based on a formally exact path integral representation describing electron tunneling nonperturbatively. The electromagnetic environment of the device is treated in terms of the Caldeira-Leggett model. We obtain the linear conductance from the Kubo formula leading to a formally exact expression which is evaluated in the semiclassical limit. Specifically we consider three models. First, the influence of an electromagnetic environment of arbitrary impedance on a single tunnel junction is studied focusing on the limits of large tunneling conductance and high to moderately low temperatures. The predictions are compared with recent experimental data. Second, the conductance of an array of N tunnel junctions is determined in dependence on the length N of the array and the environmental impedance. Finally, we consider a single electron transistor and compare our results for large tunneling conductance with experimental findings. Received 2 February 2000     

Symmetrical field effect and slow electron relaxation in granular aluminium

Conductivity and field effect measurements in thin insulating Al granular films are reported. The occurrence of a symmetrical field effect and of very slow conductance relaxations is demonstrated. They are identical to the electron glassy behaviours already reported in insulating indium oxide thin films. The results suggest that the phenomena are quite general. The study of structurally discontinuous samples should help to understand the origin and mechanism of the glassy behaviour. Received 4 December 2002 / Received in final form 26 February 2003 Published online 11 April 2003 RID="a" ID="a"e-mail: thierry.grenet@grenoble.cnrs.fr     

Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation. Received 6 May 1998     

Correlations of conductance peaks and transmission phases in deformed quantum dots

We investigate the Coulomb blockade resonances and the phase of the transmission amplitude of a deformed ballistic quantum dot weakly coupled to leads. We show that preferred single-particle levels exist which stay close to the Fermi energy for a wide range of values of the gate voltage. These states give rise to sequences of Coulomb blockade resonances with correlated peak heights and transmission phases. The correlation of the peak heights becomes stronger with increasing temperature. The phase of the transmission amplitude shows lapses by between the resonances. Implications for recent experiments on ballistic quantum dots are discussed. Received 17 July 1998     

Spin-dependent shot noise in diluted-magnetic-semiconductor/ semiconductor heterostructures

We investigated the shot noise properties in the diluted-magnetic-semiconductor/semiconductor heterostructures, where the sp-d exchange interaction gives rise to a giant spin splitting when an external magnetic field is applied along the growth direction of the heterostructures. It is found that the noise becomes strongly spin-dependent and can be greatly modulated not only by the external magnetic and electric fields, but also by the structural configuration and geometric parameters. Both the spin-up and spin-down components of the noise spectral density can be greatly suppressed by the magnetic field. The Fano factor is notably sensitive to the transmission probabilities, which varies greatly with the spin-polarization, the external magnetic field, and the structural configuration.     

Low frequency and weakly nonlinear spin transport in ferromagnet/insulator single and double junctions

In this paper, we apply Büttiker's gauge invariant, charge conservation, nonlinear transport theory to explore the spin-polarized tunneling of ferromagnet/insulator (semiconductor) single and double junctions. The Green function of spin-polarized tunneling is calculated by the tight-binding approximation method. The energy and the angle (between the molecular field and the vertical axis) dependences of the weakly nonlinear dc transport coefficient and the linear low frequency ac transport coefficient are investigated. The ac tunneling magnetoresistance is also discussed. Received 1st September 2000 and Received in final form 5 December 2000     

Analytical result of the effect of spin scattering and impurity-assistance on magnetoresistance in doped magnetic tunneling junctions

An extended tunneling Hamiltonian method is proposed to study the temperature-dependent tunneling magnetoresistance (TMR) in doped magnetic tunnel junctions. It is found that for nonmagnetic dopants (Si), impurity-assisted tunneling is mainly elastic, giving rise to a weak spin polarization, thereby reduces the overall TMR, while for magnetic ions (Ni), the collective excitation of local spins in δ-doped magnetic layer contributes to the severe drop of TMR and the behavior of the variation of TMR with temperature different from that for Si-doping. The theoretical results can reproduce the main characteristic features of experiments. Received 13 January 2002 / Received in final form 30 November 2002 Published online 6 March 2003 RID="a" ID="a"e-mail: yctao12@163.com     

Error diagrams and temporal correlations in a fracture model with characteristic and power-law distributed avalanches

The field-induced carrier redistribution between the subbands of a semiconductor superlattice is treated using the density matrix approach. The unit cell of the superlattice consists of one quantum well with three occupied subbands. Carrier scattering on polar-optical phonons is described within the microscopic bulk phonon model. At the tunneling resonance, an intrinsic population inversion is observed. The temperature dependence of the population inversion is determined. Received 25 October 2002 / Received in final form 27 November 2002 Published online 6 March 2003 RID="a" ID="a"e-mail: kl@pdi-berlin.de     

Inelastic relaxation and noise temperature in S/N/S junctions

We studied electronic relaxation in long diffusive superconductor/normal metal/superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths of 4, 10 and 60μm have been investigated. In all samples the shot noise increases very rapidly with the voltage. This is interpreted in terms of enhanced heating of the electron gas confined between the two S/N interfaces. Experimental results are analyzed quantitatively taking into account electron-phonon interaction and heat transfer through the S/N interfaces. Transport measurements reveal that in all samples the two S/N interfaces are connected incoherently, as shown by the reentrance of the resistance at low temperature. The complementarity of noise and transport measurements allows us to show that the energy dependence of the reentrance at low voltage is essentially due to the increasing effective temperature of the quasiparticles in the normal metal. Received 5 February 2002 / Received in final form 6 September 2002 Published online 31 October 2002 RID="a" ID="a"e-mail: hoffmann@drfmc.ceng.cea.fr     

Signature of Kondo effect in silicon quantum dots

We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device. Received 13 November 2001 and Received in final form 18 February 2002     

Quantum Brownian motion on potential surfaces coupled via tunneling in an external electric field[-2mm]

The present paper deals with the motion of a Brownian particle on two identical but shifted potential surfaces, coupled via a tunneling matrix element in an external electric field. Dissipation is induced by a heat bath represented by an infinite set of harmonic oscillators with a continuum range of frequencies. We derive a perturbative solution for the quantum coherence term of the particle system after performing a small-polaron-like transformation. This is subsequently necessary for the extraction of an equation that describes the reduced dynamics and the minimal action path of the Brownian particle. Finally we extract expressions for the population relaxation rate and the pure quantum-dephasing rate of the two-level system. Received 4 January 2001 and Received in final form 12 March 2001     

Experimental evidence and consequences of rare events in quantum tunneling

Tiny spatial fluctuations of tunnel barrier parameters are shown to have dramatic consequences on the statistical properties of quantum tunneling. A direct experimental evidence is provided that the tunnel current through metal-oxide junctions, imaged at a nanometric scale, exhibits broad statistical distributions extending over more than 4 orders of magnitude. Striking effects of broad current distributions are shown: the total tunnel transmission is dominated by few highly transmitting sites and the typical current density varies strongly with the size of the junction. Moreover, self-averaging of the tunnel current fluctuations occurs only for unexpectedly large junction areas. Received 1 April 1999     

Tunability of the Kondo effect in an asymmetrically tunnel coupled quantum dot

The transport properties of a single quantum dot were measured at low temperature in a regime of strong asymmetric tunnel coupling to leads. By tuning this asymmetry, the two parameters of the Kondo effect in a quantum dot, the Kondo temperature and the zero-bias zero-temperature conductance, were independently controlled. A careful analysis of the Coulomb energies and of the tunnel couplings was performed. It allowed an estimate of the Kondo temperature independently of its value obtained via the temperature dependence of the conductance. Both are in good agreement. We finally compared our experimental data with an exact solution of the Kondo problem which provides the dependence of the differential conductance on temperature and source-drain voltage. Theoretical expectations fit quite well our experimental data in the equilibrium and out-of-equilibrium regimes.     

Electron teleportation with quantum dot arrays

An electron teleportation protocol, inspired by the scenario by Bennett et al., is proposed in a mesoscopic set-up. A superconducting circuit allows to both inject and measure entangled singlet electron pairs in an array of three normal quantum dots. The selection of the teleportation process is achieved in the steady state with the help of two superconducting dots and appropriate gating. Teleportation of the electron spin is detected by measuring the spin-polarized current through the normal dot array. This current is perfectly correlated to the pair current flowing inside the superconducting circuit. The classical channel required by Bennett's protocol, which signals the completion of a teleportation cycle, is identified with the detection of an electron pair charge in the superconducting circuit. Received 10 December 2002 / Received in final form 14 March 2003 Published online 7 May 2003     

Broad distribution effects in sums of lognormal random variables

The lognormal distribution describing, e.g., exponentials of Gaussian random variables is one of the most common statistical distributions in physics. It can exhibit features of broad distributions that imply qualitative departure from the usual statistical scaling associated to narrow distributions. Approximate formulae are derived for the typical sums of lognormal random variables. The validity of these formulae is numerically checked and the physical consequences, e.g., for the current flowing through small tunnel junctions, are pointed out. Received 8 November 2002 / Received in final form 17 March 2003 Published online 7 May 2003     

Electronic entanglement in the vicinity of a superconductor

A weakly biased normal-metal-superconductor junction is considered as a potential device injecting entangled pairs of quasi-particles into a normal-metal lead. The two-particle states arise from Cooper pairs decaying into the normal lead and are characterized by entangled spin- and orbital degrees of freedom. The separation of the entangled quasi-particles is achieved with a fork geometry and normal leads containing spin- or energy-selective filters. This solid state entangler is characterized by noise cross-correlations which are identical to the noise in one lead, a signature consistent with entanglement. A connection to Bell-type experiments is envisioned (cond-mat/0009193). Received 20 September 2001     

Distribution of the delay time and the dwell time for wave reflection from a long random potential

We re-examine and correct an earlier derivation of the distribution of the Wigner phase delay time for wave reflection from a long one-dimensional disordered conductor treated in the continuum limit. We then numerically compare the distributions of the Wigner phase delay time and the dwell time, the latter being obtained by the use of an infinitesimal imaginary potential as a clock, and investigate the effects of strong disorder and a periodic (discrete) lattice background. We find that the two distributions coincide even for strong disorder, but only for energies well away from the band-edges. Received 11 June 2001 and Received in final form 30 July 2001     

Hypersensitivity to small signals in a stochastic system with multiplicative colored noise

Recently we discovered the phenomenon of hypersensitivity to small time-dependent signals in a simple stochastic system, the Kramers oscillator with multiplicative white noise. In the present work we study, theoretically and experimentally with analog simulations, an influence of noise correlation time on hypersensitivity in a nonlinear oscillator with piecewise-linear current-voltage characteristic and multiplicative colored dichotomous noise. We found that the region of hypersensitive behavior is defined by universal scaling index, whereas the specifics of a particular system reveals itself only in the dependence of the above index on system parameters. The dependence of gain factor on noise correlation time is of bell-shaped (resonant) type. Received 27 April 2000 and Received in final form 2 November 2000     

Frequency dependence of the photonic noise spectrum in an absorbing or amplifying diffusive medium

A theory is presented for the frequency dependence of the power spectrum of photon current fluctuations originating from a disordered medium. Both the cases of an absorbing medium (“grey body”) and of an amplifying medium (“random laser”) are considered in a waveguide geometry. The semiclassical approach (based on a Boltzmann-Langevin equation) is shown to be in complete agreement with a fully quantum mechanical theory, provided that the effects of wave localization can be neglected. The width of the peak in the power spectrum around zero frequency is much smaller than the inverse coherence time, characteristic for black-body radiation. Simple expressions for the shape of this peak are obtained, in the absorbing case, for waveguide lengths large compared to the absorption length, and, in the amplifying case, close to the laser threshold. Received 8 August 2000