Influence of pulse duration on the doping quality in laser chemical processing (LCP)—a simulative approach

The laser chemical processing (LCP) technique for the local doping of crystalline silicon solar cells is investigated. Here, a liquid jet containing a dopant source acts as a waveguide for pulsed laser light, which results in the melting and subsequent doping of the silicon surface. Typical LCP pulse durations are in the 15 ns range, giving satisfactory results for specific parameter settings. While great potential is assumed to exist, optimization of the pulse duration has until now not been deeply investigated, because it is hard to change this parameter in laser systems. Therefore, this paper accesses the influence of the pulse duration by a simulative approach. The model includes optics, thermodynamics, and melt dynamics induced by the liquid jet and dopant diffusion into the silicon melt. It is solved by coupling our existing finite differences Matlab-code LCPSim with the commercial fluid flow solver Ansys Fluent. Simulations of axial symmetric single pulses were performed for pulse durations ranging from 15 ns to 500 ns. Detailed results are given, which show that for longer pulse durations lateral heat conduction significantly homogenizes the inhomogeneous dopant distribution caused by the speckled intensity profile within the liquid jet cross section. The melt expulsion by the liquid jet is low enough that a sufficiently doped layer remains after full resolidification for all pulse durations. Last, temperature gradients are evaluated to give an indication on the amount of laser damage induced by thermal stress.     

Studies of pulsed laser melting and rapid solidification using amorphous silicon

Pulsed laser melting of ion implantation-amorphized silicon layers, and the subsequent solidification of undercooled liquid silicon, have been studied experimentally and theoretically. Measurements of the time of the onset of melting of amorphous silicon layers, during an incident laser pulse, have been combined with measurements of the duration of melting, and with modified melting model calculations to demonstrate that the thermal conductivity, K_a, of amorphous silicon is very low (K_a0.02 W/cm K). K_a is also found to be the dominant parameter determining the dynamical response of amorphous silicon to pulsed laser radiation; the latent heat of fusion and melting temperature of amorphous silicon are relatively unimportant. Transmission electron microscopy indicates that bulk (volume) nucleation occurs directly from the highly undercooled liquid silicon that can be prepared by pulsed laser melting of amorphous silicon layers at low laser energy densities. A modified thermal melting model has been constructed to simulate this effect and is presented. Nucleation of crystalline silicon apparently occurs at a nucleation temperature, T_n, that is higher than the temperature, T_a, of the liquid-to-amorphous phase transition. The model calculations demonstrate that the release of latent heat by bulk nucleation occurring during the melt-in process is essential to obtaining agreement with experimentally observed depths of melting. These calculations also show that this release of latent heat accompanying bulk nucleation can result in the existence of buried molten layers of silicon in the interior of the sample after the surface has solidified. It is pointed out that the occurrence of bulk nucleation implies that the liquid-to-amorphous phase transition (produced using picosecond or ultraviolet nanosecond laser pulses) cannot be explained by purely thermodynamic considerations.     

一种求解流体力学方程组的自适应显式时间积分算法及其应用

针对交替方向显式离散格式,提出一个基于结构网格局部加密技术(SAMR)的求解流体力学方程组的自适应时间积分算法;基于该算法,在JASMIN框架上研制多介质流体力学并行自适应数值模拟程序;在512个处理器上模拟惯性约束聚变中的二维内爆模型.数值模拟结果和并行性能分析显示了算法的正确性和并行实现的高效率.     

Transient 3D/2D simulation of laser-induced ablation of silicon

A numerical software has been developed to simulate heating, enthalpy-based phase changes and ablation of silicon during pulsed or continuous-wave laser irradiation. The unsteady heat transfer equation is solved by finite differences in two or three dimensions with full resolution of the thin liquid layer. An intelligent adaptive grid refinement and a semi-analytic treatment of the surface elements have been implemented to simulate laser cuts with lots of laser pulses in moderate computing time. The code has been successfully verified by comparisons with an analytic solution and with experimental data. Details of the mathematical model, the implementation in Matlab^®and comparisons with experimental laser cuts are presented in this paper.     

Numerical modeling of laser–matter interaction in the region of “low” laser parameters

The interaction of laser radiation with matter leads to the certain kinds of modelling of its surface or volume. These effects have been demonstrated for a lot of materials, even causing the formation of new scientific and industrial domain, which is undoubtedly laser material processing and as well as laser cleaning of artworks. Those applications lie in the so-called “low' region of laser energy densities, represented for short laser pulses by power densities below 10⁹ W/cm². Paper presents set of equations describing in one-dimensional (1D) model phenomena accompanying to laser–matter interaction. Target geometry includes two and four layers of different materials, irradiated by ns laser pulses. Effects of radiation absorption and transport, heat conductivity, target transit to plastic state, melting and evaporation are taken into consideration. The part of the paper is devoted to the discussion of numerical results, selected in such a way to illustrate the phenomenon of radiation interaction with materials as well as to show, in whole, possibilities of computer simulation methods.     

Expansion of a laser plume from a silicon wafer in a wide range of ambient gas pressures

Expansion of the laser plume from a silicon wafer into surrounding gas is considered in the range of ambient gas pressure from 0.1 to 1 bar using a kinetic approach. The plume is generated by a nanosecond Gaussian laser pulse. Absorption of laser radiation and heating and melting of the target are described by a two-dimensional thermal model. Axisymmetric flow in the laser plume is calculated by the direct simulation Monte Carlo method. It was found that diffusion of mixture components is significant in the considered time scale, flow is non-equilibrium, and regions of high rarefaction temporally appear in the flow. In atmospheric pressure, the re-deposition of the silicon vapor was observed only in the vicinity of the laser spot.     

Simulation of silicon diffusion in GaAs

The simulation of coupled diffusion of silicon atoms and point defects in GaAs has been carried out for diffusion at the temperatures of 1000 and 850 °C. The amphoteric behavior of silicon atoms in GaAs has been taken into account in the investigation of high concentration diffusion from silicon layer deposited on GaAs substrate. The calculated dopant profiles agree well with the experimental ones and they confirm the adequacy of the model of silicon diffusion used for simulation. A comparison with the experimental data has enabled this work to obtain the parameters of silicon effective diffusivity and other values describing high concentration silicon diffusion in GaAs.     

Excimer laser-assisted annealing of silicate glass with ion-synthesized silver nanoparticles

The effect of KrF excimer laser radiation on a composite layer consisting of sodium-potassium silicate glass with silver nanoparticles is studied as a function of the number of laser nanosecond pulses. The silver nanoparticles are synthesized by ion implantation. The measured optical absorption of the composite layer demonstrates that the silver nanoparticle size decreases monotonically as the number of laser pulses increases. Rutherford backscattering shows that laser annealing is accompanied by silver diffusion into the bulk of the glass and partial metal evaporation from the sample surface. The detected decrease in the silver nanoparticle size is discussed in terms of simultaneous melting of silver nanoparticles and the glass matrix due to the absorption of laser radiation.     

Investigation of laser-annealed antimony implanted Si by ion backscattering and channeling and structure analysis

Rutherford backscattering (RBS), ion channeling and surface studies were done to investigate diffusion of ion implanted Sb in Si. Clean and polished Si was implanted by 190KeV Sb⁺ ions to a dose of 2.3×10¹⁵cm^–2. Laser annealing was carried out by a single 10 J/cm² laser pulse from a Nd: glass (7 ns FWHM) laser. Concentration profiles of Sb as a function of depth and dopant substitutionalities were measured by helium-ion backscattering and channeling. The laser shot resulted in melting of the central portion of the spot. A honey comb type surface morphology was found by SEM analysis. Dektak surface profiles showed a crater of 600 nm depth. One-dimensional heating calculations show that dopant diffusion depths, after consideration of simultaneous evaporation, can be 400 nm, whereas experiments indicate larger depths (1 m). Calculated crater depth is roughly twice the experimental value. Measured depths are much larger than calculated by heat diffusion and indicate that regrowth and distribution of Sb has been modified by convection in the melt. We estimate good substitutionality up to 4 J/cm² and discuss energy density dependence for such high-energy density laser pulses.     

Modeling of polysilicon diffusion sources during rapid optical annealing

A new model for polysilicon diffusion sources is presented. It considers the following effects: 1) dopant diffusion in grains, in grain boundaries and in the single-crystal silicon substrate, 2) dynamic dopant segregation between grain and grain boundary phases and between the phases of polysilicon and the single-crystal silicon substrate, 3) dynamic dopant activation or clustering in grains and in the single-crystal silicon substrate, 4) dynamic grain growth depending on local grain size and local electron density. These mechanisms with completely different time scales are modeled simultaneously. For the first time this allows the analysis of furnace and rapid optical annealing processes with arbitrary grain growth kinetics even during epitaxial realignment. The advanced model for segregation allows for the effect that dopants in grain boundaries and active dopants in grains as well as in the single-crystal silicon substrate find only a limited number of sites which can be occupied. These limitations are necessary to explain the dopant distributions in polysilicon and in the single-crystal silicon substrate. For the first time the coupling between the concentration of active dopants in grains, between the concentration of dopants in grain boundaries and between the local grain size is shown during doping enhanced grain growth.     

The role of diffusion in broadband infrared absorption in chalcogen-doped silicon

Sulfur doping of silicon beyond the solubility limit by femtosecond laser irradiation leads to near-unity broadband absorption of visible and infrared light and the realization of silicon-based infrared photodetectors. The nature of the infrared absorption is not yet well understood. Here we present a study on the reduction of infrared absorptance after various anneals of different temperatures and durations for three chalcogens (sulfur, selenium, and tellurium) dissolved into silicon by femtosecond laser irradiation. For sulfur doping, we irradiate silicon in SF₆ gas; for selenium and tellurium, we evaporate a film onto the silicon and irradiate in N₂ gas; lastly, as a control, we irradiated untreated silicon in N₂ gas. Our analysis shows that the deactivation of infrared absorption after thermal annealing is likely caused by dopant diffusion. We observe that a characteristic diffusion length—common to all three dopants—leads to the reduction of infrared absorption. Using diffusion theory, we suggest a model in which grain size of the resolidified surface layer can account for this characteristic diffusion length, indicating that deactivation of infrared absorptance may be caused by precipitation of the dopant at the grain boundaries.     

Laser technology for submicron-doped layers formation in semiconductors

A p–n junctions formed by means of laser stimulated diffusion of dopants into semiconductors (Si, GaAs, GaP, InP) were investigated. SIMS and AES spectroscopy methods were used to measure the depth profiles of the incorporated impurities: B into Si, Zn into GaAs, GaP and InP. The volt-capacity method using an electrochemical profilometer was used for the charge carrier concentration distribution in the doped layer. Spectroscopy investigations have shown that during solid phase diffusion locally doped regions almost exactly reproduce the shape and size of the windows in the dielectrics. The lateral diffusion of the dopant is about 0.01μm. The concentration profiles of charge carrier distribution in the doped layers clearly show the specific processes of dopant diffusion and evaporation at laser solid-phase doping of semiconductors. The comparative analysis of parameters of formed semiconductor structures shows that the procedure of laser solid-phase doping can stand the comparison with technology of implantation and conventional diffusion technology. Since the laser solid-phase doping ensures also a high degree of reproducibility of p–n junction parameters, it can be effectively used for electronic devices fabrication.     

Numerical modeling of thermoelastic generation of ultrasound by laser irradiation in the coupled thermoelasticity

Laser-generation of ultrasound is investigated in the coupled dynamical thermoelasticity in the presented paper. The coupled heat conduction and wave equations are solved using finite differences. It is shown that the application of staggered grids in combination with explicit integration of the wave equation facilitates the decoupling of the solution and enables the application of a combination of implicit and explicit numerical integration techniques. The presented solution is applied to model the generation of ultrasound by a laser source in isotropic and transversely isotropic materials. The influence of the coupling of the generalized thermoelasticity is investigated and it will be shown, that for ultra high frequency waves (i.e. 100 GHz) generated by laser pulses with duration in the picosecond range, the thermal feedback becomes considerable leading to a strong attenuation of the longitudinal bulk wave. Moreover, the coupling leads to dispersion influencing the wave velocities at low frequencies. The numerical simulations are compared to theoretical results available in the literature. Wave fields generated by a line focused laser source are presented by the numerical model for isotropic and for transversely isotropic materials.     

Silicon Ablation by Single Ultrashort Laser Pulses of Variable Width in Air and Water

The ablation of silicon by single laser pulses of variable width (0.3–9.5 ps) with a wavelength of 515 nm has been comparatively studied in air and water. A nonmonotonic behavior of ablation thresholds with a minimum at 1.6 ps, which is due to achieving the thermalization time of the electron and ion subsystems in silicon, has been revealed. It has been shown that, with an increase in the pulse width in the considered width range, the efficiency of the ablation of silicon decreases by a factor of 2.5 in air and increases by a factor of 2 in water. This behavior of ablation in air is attributed to a partial transition from phase explosion to surface evaporation, which is suppressed in water.     

Assessment of laser-induced thermal load on silicon nanostructures based on ion desorption yields

Experimental assessment of the thermal load induced by fast laser pulses on micro- and nanostructures through IR imaging is currently too slow and lacks the spatial resolution to be useful. In this paper, we introduce a method based on measuring the laser-induced yields of ions to compare the thermal loads on nanofabricated silicon structures, when exposed to nanosecond laser pulses. The laser fluences at which the ion yields of, for example, sodiated and potassiated peptides ions are equal for two different structures correspond to equivalent thermal loads. Using alkalinated peptides is a convenient choice because the corresponding ion intensities are easily measured up to the melting point of silicon. As an example, we compare the nanosecond laser heating of silicon nanopost arrays with diverse post diameters and periodicities. Assessment of the thermal load through ion yield measurements can also be used to verify model assumptions for heat transport regimes in nanostructures.     

Numerical simulation of process dynamics during laser beam drilling with short pulses

In the last years, laser beam drilling became increasingly important for many technical applications as it allows the contactless production of high quality drill holes. So far, mainly short laser pulses are of industrial relevance, as they offer a good compromise between precision and efficiency and combine high ablation efficiency with low thermal damage of the workpiece. Laser beam drilling in this pulse length range is still a highly thermal process. There are two ablation mechanisms: evaporation and melt expulsion. In order to achieve high quality processing results, a basic process understanding is absolutely necessary. Yet, process observations in laser beam drilling suffer from both the short time scales and the restricted accessibility of the interaction zone. Numerical simulations offer the possibility to acquire additional knowledge of the process as they allow a direct look into the drill hole during the ablation process. In this contribution, a numerical finite volume multi-phase simulation model for laser beam drilling with short laser pulses shall be presented. The model is applied for a basic study of the ablation process with μs and ns laser pulses. The obtained results show good qualitative correspondence with experimental data.     

Phase transitions in erbium-doped silicon exposed to laser radiation

The dynamics of phase transitions induced by nanopulsed ruby laser radiation (80 nsec, 2 J/cm²) both in silicon layers doped with erbium ions and in those containing doped erbium and oxygen have been studied by an optical probing method. It is shown that the reflectivity behavior of structures under pulsed irradiation is governed by phase transitions (melting and crystallization) of implanted silicon and also by interference effects at the interfaces of the resulting phases. It is established that the profiles of erbium distribution change under nanosecond laser irradiation and that the dopant is forced out to the surface due to a segregation effect at small implantation doses. As the implanatation dose increases, diffusion deep into the sample tends to prevail over segregation. A considerable increase in the photoluminescence peak intensity at 0.81 eV is found after both the pulsed laser processing and thermal post-annealing of doped samples as opposed to spectra of samples subjected either to thermal annealing or to pulsed laser irradiation. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 2, pp. 225–231, March–April, 2009.     

Transient effects in pulsed laser irradiation

Theoretical analysis of the influence of the temporal profile (rectangular, triangular, Gaussian) of the laser pulse on heating/cooling and phase transition velocities and quantity of ablated material was performed on the basis of a multifront Stephan problem. Modeling showed that material removal under stationary conditions (that correspond to long pulses) is entirely controlled by specific heat and material density, while in the case of transient regimes (short pulses) thermal conductivity and heat capacity play a predominant role. Interaction of the melting and evaporation fronts characterized by an evaporation front velocity far exceeding the melting front one is one of the examples of the transient nature of the phenomena influenced by the laser pulse parameters.     

1 550 nm波长PNP型InGaAsP-InP异质结晶体管激光器材料设计与外延生长

基于器件模拟仿真,设计了一种PNP型1.5 μm 波长多量子阱InGaAsP-InP异质结晶体管激光器材料外延结构,并采用金属有机化学气相沉积外延生长.其中基区采用N型Si掺杂.因为扩散系数小,比较P型Zn搀杂具有较高的稳定性,因而较NPN结构外延材料容易获得高质量的光学有源区.由于N型欧姆接触比P型容易获得,基区搀杂浓度可以相对较低,有利于减小基区光损耗和载流子复合,从而获得较低的阈值电流和较高的输出光功率.所获得的外延材料呈现较高光-荧光谱峰值和65.1 nm较低半峰宽.测试结果显示了较高的外延片光学质量.