基于二维囚禁离子实现受控非门、交换门和相位门

研究了二维囚禁离子与光场相互作用系统中几种基本量子逻辑门的实现方案.通过适当选取激光场与离子内部跃迁频率的失谐量,简化了系统的哈密顿量,并进一步推导出受控非门(C-NOT门)、交换门与相位门的实现方法.在此过程中,系统需满足Lamb-Dicke极限,并要求光场的Rabi振荡频率远远小于离子的振动频率. 关键词： 囚禁离子 受控非门(C-NOT门) 交换门 相位门     

基于频率调制激光驱动的囚禁离子几何相位逻辑门

为了避免激光相位的起伏对几何相位逻辑门保真度的影响, 提出一种基于囚禁离子的量子几何相位逻辑门的新方案。该机制是利用一束频率调制的行波激光场作用于两个囚禁离子上实现的。它的优点有：操作简单,仅需一步就能实现。不灵敏于激光场的相位也不需要对囚禁离子进行个别寻址。     

辐射场的起伏对囚禁离子的量子相干性的影响

研究了囚禁离子与一随机相位的驻波场相互作用时的量子动力学行为,讨论了辐射场的起伏对囚禁离子的量子崩塌-回复特性的影响.对于相位扩散模型获得了这个问题的解析解.     

应用相位调制驻波光场制备囚禁离子的暗压缩态

基于囚禁离子与驻波激光场相互作用,应用驻波光场的相位调制的方法,我们提出了一种制备离子振动压缩态的新方法.研究了压缩振幅与调制振幅的关系.我们发现:适当选择调制振幅,可把离子制备在最佳压缩振动态上,并且它们的产生伴随着自发辐射的相消.提出了一种实验构想,并进行了讨论.     

囚禁单离子的量子阻尼运动

用包含偶极和四极虚势能项的非厄米哈密顿算符来描述Paul阱中囚禁阻尼单离子在静电场下的量子运动.通过导出和分析系统的精确解,得到在PT对称和不对称情形下的不同实能谱与稳定量子态,以及PT不对称情形的虚能谱和衰减量子态,同时给出相应于不同态的参数区域和存活概率.结果发现该非厄米系统外场参数能惟一确定量子稳定态并导致波函数形态变化,据此提出非相干操控相应量子跃迁的方法.让量子态衰减导致的离子位置期待值的衰减与经典阻尼谐振子的衰减一致,得到虚势能参数与经典阻尼参数的对应关系.所得结果将进一步丰富具有广泛应用背景的囚禁离子动力学.     

电路量子电动力学中基于超绝热捷径的控制相位门实现

针对绝热算法在系统演化过程中需要较长操作时间的问题,本文提出了电路量子电动力学系统中基于超绝热捷径的两量子比特控制相位门的快速制备方案.首先将量子比特的能级进行编码,针对不同初始态分类讨论,获得系统的有效哈密顿量.通过反绝热驱动,推导出系统有效哈密顿量的修正项,以抑制不同本征态之间不必要的跃迁,从而获得了高保真度的基于超绝热捷径控制相位门.数值模拟验证了本方案的有效性,最终保真度为0.991.所提方案可以加速演化,并且比绝热通道更有效.此外,本方案对谐振器的衰减和超导量子比特的退相干具有鲁棒性.通过对谐振腔的泄漏、量子比特的自发辐射和退相位的影响分析,得到的系统最终保真度始终保持在0.984以上.     

离子囚禁技术与量子计量基准的新进展

利用静电场、静磁场和射频场可以将离子长时间地囚禁在不受外界干扰的离子阱中,在离子阱中开展的关于离子运动频率和内部能级的超高精确测量,对于计量学有非常重要的应用前景,特别是在原子质量基准和时间频率标准方面已取得突破性进展．     

制备囚禁离子的簇态

提出一个方案用于制备囚禁离子的簇态,制备过程中振动模仅仅是被虚激发。方案用双能级离子制备簇态,只要一束激光照射两个相互作用的离子。方案简单易行,成功几率可达到100.     

One-Step Scheme for Realizing N-Qubit Quantum Phase Gates with Hot Trapped Ions

A scheme is presented for realizing an N-qubit quantum phase gate with trapped ions. Taking advantage of the virtual excitation of the vibrational mode, the qubit system undergoes a full-cycle of Rabi oscillation in the selective symmetric Dicke subspace. The scheme only involves a single step and the operation is insensitive to thermal motion. Moreover, the scheme does not require individual addressing of the ions.     

A Scheme of Conditional Quantum Phase Gate for Dissipative Cavity QED System

We propose a scheme to implement a two-qubit conditional quantum phase gate via a single mode cavity and a cascade four-level atom assisted by a classical laser. The quantum information is encoded.on the Flock states of the cavity mode and the two metastable ground states of the atom. Even under the condition of systematic dissipations, this scheme can also be realized with fidelity of 98.6% and success probability of 0.767.     

A Scheme of Conditional Quantum Phase Gate for Dissipative Cavity QED System

We propose a scheme to implement a two-qubit conditional quantum phase gate via a single mode cavity and a cascade four-level atom assisted by a classical laser. The quantum information is encoded on the Fock states of the cavity mode and the two metastable ground states of the atom. Even under the condition of systematic dissipations,this scheme can also be realized with fidelity of 98.6% and success probability of 0.767.     

Simple Scheme for Realizing the General Conditional Phase Shift Gate and aSimulation of Quantum Fourier Transform in Circuit QED

We propose a theoretical scheme for realizing the generalconditional phase shift gate of charge qubits situated in ahigh-Q superconducting transmission line resonator. Thephase shifting angle can be tuned from 0 to 2π by simplyadjusting the qubit-resonator detuning and the interaction time.Based on this gate proposal, we give a detailed procedure toimplement the three-qubit quantum Fourier transform withcircuit quantum electrodynamics (QED). A careful analysis of thedecoherence sources shows that the algorithm can be achieved with ahigh fidelity using current circuit QED techniques.     

Scheme for N-Qubit Toffoli Gate by Transport of Trapped Ultracold Ions

We propose a potentially practical scheme for implementing an n-qubit Toffoli gate by elaborately controlling the transport of ultracold ions through stationary laser beams. Conditioned on the uniform ionic transport velocity, the n-qubit Toffoli gate can be realized with high fidelity and high successful probability under current experimental conditions, which depends on a single resonant interaction with n trapped ions and has constant implementation time with the increase of qubits. We show that the increase of the ion number can improve the fidelity and the successful probability of the Toffoli gate.     

Scheme for N-Qubit Toffoli Gate by Transport of Trapped Ultracold Ions

We propose a potentially practical scheme for implementing an n-qubit Toffoli gate by elaborately controlling the transport of ultracold ions through stationary laser beams. Conditioned on the uniform ionic transport velocity, the n-qubit Toffoli gate can be realized with high fidelity and high successful probability under current experimental conditions, which depends on a single resonant interaction with n trapped ions and has constant implementation time with the increase of qubits. We show that the increase of the ion number can improve the fidelity and the successful probability of the Toffoli gate.     

Non-Geometric Conditional Phase Gate by Quantum Zeno Dynamics in Laser-Excited Nitrogen-Vacancy Centers

Based on the quantum Zeno dynamics,we propose a two-qubit non-geometric conditional phase gate between two nitrogen-vacancy centers coupled to a whispering-gallery mode cavity.The varying phases design of periodic laser can be used for realizing non-geometric conditional phase gate,and the cavity mode is virtually excited during the gate operation.Thus,the fidelity of the gate operation is insensitive to cavity decay and the fluctuation of the preset laser intensity.The numerical simulation with a realistic set of experimental parameters shows that the gate fidelity 0.987 can be within reached in the near future.     

Quantum Phase Gates for Trapped Ions via Adiabatic Passage

We propose a scheme to produce quantum phase gates for trapped ions. Taking advantage of the adiabatic evolution, the operation is insensitive to small fluctuations of experimental parameters. Furthermore, the spontaneous emission is suppressed since the ions have no probability of being populated in the electronic excited states.     

A scheme for the implementation of unconventional geometric phase gates with trapped ions

We propose a scheme for the realization of unconventional geometric two-qubit phase gates with two identical two-level ions, In the present scheme, the two ions are simultaneously illuminated by a standing-wave laser pulse with its pulse frequency being tuned to the ionic transition. The gate operation time can be much shorter, making the system robust against decoherence. In addition, we choose the appropriate experimental parameters to construct the geometric phase gate in one step, and thus avoid implementing the pure geometric single qubit operation.[第一段]