GaAs半导体材料中双光子吸收光限幅与偏振方向的关系

理论分析了线偏振光波的偏振方向对ＧａＡｓ半导体双光子吸收的影响，实现了ＧａＡｓ半导体材料中不同偏振方向的双光子吸收限幅，提高了双光子吸收光限幅的性能。     

基于半导体光放大器四波混频原理的光采样

建立了可研究强超短光脉冲放大特性且包含自由载流子吸收、受激辐射、双光子吸收、光谱烧孔和超快非线性折射效应的半导体光放大器理论模型,用以建立脉冲四波混频模型,并进一步仿真了基于半导体光放大器的光采样过程,重点讨论了自由载流子吸收、双光子吸收效应对采样特性的影响。仿真结果与实验结果相符。     

导带电子的光吸收及其对材料破坏过程的影响

计算了可见光和紫外光激光照射下声子和电子-空穴散射参与的导带电子的单光子吸收和双 光子吸收速率,讨论了非线性吸收和空穴散射参与的吸收对材料损伤过程的影响.结果表明 ,这两种过程使导带电子吸收光子的速率提高一倍以上,材料发生非热致损伤的临界强度降低约1/3.雪崩速率不仅含激光强度的线性项,还包含了激光强度的二次项和激光强度与空穴 浓度的乘积项.理论给出的损伤阈值也有一定程度的减小. 关键词： 石英玻璃 双光子吸收 单光子吸收 损伤机理     

GaAs在光通讯波段的超快非线性光学研究

采用Z-扫描和泵浦-探测技术,在光通讯波段对砷化镓(GaAs)单晶进行了非线性动力学以及非线性光学的实验研究.飞秒泵浦-探测实验结果表明,三阶非线性光学效应源于砷化镓单晶对飞秒激光的瞬态双光子吸收,而五阶非线性光学效应源于砷化镓单晶双光子吸收诱导的自由载流子吸收效应.通过Z扫描实验,得到了关于GaAs单晶所有的非线性光学参数,包括双光子吸收系数、三阶非线性折射系数、双光子吸收诱导的自由载流子吸收截面以及双光子吸收诱导的自由载流子折射截面.结果表明,砷化镓单晶在制造光限幅器件和光电探测器方面具有良好的发展前景.     

双光子吸收材料二苯乙烯衍生物的合成及光谱性质

设计、合成并用红外光谱、1H NMR、元素分析表征了三种用于双光子吸收材料的二苯乙烯衍生物,4,4′-双(二苯氨基-反式-苯乙烯基)联苯(BPSBP),4,4′-双(二乙氨基-反式-苯乙烯基)联苯(BESBP)和4,4′-双(9-咔唑基-反式-苯乙烯基)联苯(BCSBP)。实验结果表明三者最强的单光子吸收出现在350～400 nm之间,且单光子吸收和荧光光谱中表现出明显的溶剂化显色效应,揭示了分子内对称电荷转移的本质,双光子荧光光谱则揭示了单光子和双光子吸收具有相同的发射机理。利用双光子上转换荧光法测试发现,三种双光子吸收材料在800 nm飞秒激光的激发下具有较大的吸收截面,分别为892,617和483 GM,这表明在双光子领域有潜在的应用价值。     

Ge掺杂GaN晶体双光子诱导超快载流子动力学的飞秒瞬态吸收光谱研究

本文利用飞秒瞬态吸收光谱技术,在近红外波段对Ge掺杂GaN(GaN:Ge)晶体进行了超快载流子动力学研究.在双光子激发下,瞬态吸收动力学呈现出双指数衰减,其中慢过程寿命随着泵浦光强增加而增加.瞬态吸收响应随着探测波长而单调增强,并在约1050nm处由空穴吸收占据主导.利用简化模型模拟载流子动力学发现,GaN:Ge中碳杂质形成的深受主能级对空穴有很强的俘获能力,并且引起了缺陷发光.在较适中的载流子注入下,n型GaN中的载流子寿命可以通过控制缺陷浓度和载流子浓度来共同调控,使其可应用于发光二极管和光通信等不同的领域.     

石英玻璃中导带电子的光吸收

分别用二阶和三阶微扰理论计算了 １９３ｎｍ 、３５５ｎｍ 激光照射下石英玻璃中导带电子的单光子吸收速率和双光子吸收速率。结果表明,电子空穴散射参与的单光子吸收和声学声子参与的双光子吸收都是材料中导带电子吸收激光能量的重要过程。     

石英玻璃中导带电子的光吸收

 分别用二阶和三阶微扰理论计算了193nm、355nm激光照射下石英玻璃中导带电子的单光子吸收速率和双光子吸收速率。结果表明,电子空穴散射参与的单光子吸收和声学声子参与的双光子吸收都是材料中导带电子吸收激光能量的重要过程。     

石英玻璃中导带电子的光吸收

分别用二阶和三阶微扰理论计算了193nm、355nm激光照射下石英玻璃中导带电子的单光子吸收速率和双光子吸收速率。结果表明,电子空穴散射参与的单光子吸收和声学声子参与的双光子吸收都是材料中导带电子吸收激光能量的重要过程。     

微波吸收法研究(ZnCd)S∶Cu发光材料光生载流子的衰减过程

采用微波吸收法,测量了(ZnCd)S∶Cu及ZnS∶Mn,Cu粉末材料受到超短脉冲激光激发后,其自由电子和浅束缚电子的衰减过程。发现Cd2+的浓度对导带电子和浅束缚电子的寿命影响较小,而Cu+的浓度对导带电子和浅束缚电子的寿命有明显的影响,提高激活剂掺杂浓度会使自由电子的寿命大大缩短。     

The radiative lifetime and the optical absorption cross section measurements of neodymium

Using the technique of laser induced fluorescence, we have obtained the experimental results that the radiative lifetime of the ~7K_3~o state and the optical absorption cross section of the transition ~5I_4~e→~7K_3~o of neodymium are 675±50ns and (1.48±0.74)×10~(-13)cm~2 respectively.     

Two-photon absorption and laser photolysis of trans-stilbene substitutes

The measured the two-photon absorption (TPA) cross sections of ethanol solution of trans-stilbene and its two substitutes excited by nanosecond radiation of the 2nd harmonic of a Nd:YAG laser (532 nm) are presented. To determine the TPA cross section, a method based on measurements of photochemical decomposition of molecules of the examined compounds having low photostability is suggested. The measured value of the TPA cross section of trans-stilbene in ethanol is found to be 25 GM, and the TPA cross sections of the trans-stilbene substitutes are found to be 60 and 70 GM. The TPA cross section of trans-stilbene substitutes obtained in the present paper is compared with the experimental and theoretical data obtained by other authors. The results of investigations demonstrate that the photochemical decomposition method can be successfully used to determine experimentally the two-photon absorption cross section of the compounds unstable under photoexcitation, including photochromatic molecules, biological objects, and radical photoinitiators.     

Free-carrier multiphoton laser absorption in magnetic semiconductors

The magnon scattering by free carriers in the presence of an intense laser field is discussed. A kinetic equation for electrons is derived from which the multiphonon absorption coefficient is calculated. It is found that for very large fields the absorption coefficient is vanishing small. A physical explanation of this result is also available.     

Yb3+掺杂铝氟磷酸盐玻璃的光谱和激光性能

研究了Yb3 掺杂铝氟磷酸盐 (AFP)玻璃的吸收光谱、荧光光谱 ,测量了Yb3 离子的荧光有效线宽 (Δλeff>5 5nm)以及2 F5 2 能级的荧光寿命 (τmax=2ms)及随掺杂浓度的变化 .应用倒易法计算了Yb3 的发射截面 ,其发射截面可达 0 6 6 82 3pm2 ,且激光增益系数τfσemi达 1 2 89ms.pm2 .评估了Yb3 在AFP玻璃中的激光性能 ,发现其具有较理想的激发态最小粒子数 (0 15 )、饱和抽运强度 (8 3kW cm2 )和最小抽运强度 (1 2 4 5kW cm2 )值及良好的热稳定性 .研究结果表明掺Yb3 氟磷酸盐玻璃是实现高功率超短可调谐激光器的理想增益介质 .     

LiF及AlF3对掺Tm3+氟磷玻璃光学、光谱性质、析晶性能及结构的影响

为了平衡掺铥氟磷玻璃对辐射寿命、发射截面和析晶稳定性的综合要求,研究了LiF及AlF₃对掺铥氟磷玻璃光学光谱性质和析晶性能的影响. 研究表明,高达30 mol%的LiF仍可保证氟磷玻璃具有较好的析晶稳定性能且其在提高Tm³⁺离子的辐射寿命上具有非常重要的作用;高AlF₃玻璃具有很好的析晶稳定性能,但Tm³⁺离子在其中的辐射寿命下降较快; 鉴于LiF和AlF₃含量的相对变化对发射截面的影响不大,因此 关键词： 氟磷玻璃 辐射寿命 发射截面 析晶稳定性     

Calculation of laser induced collisional energy transfer in the Sr-Ca system

Based on the four-state model of laser-induced collisional energy transfer,the cross section of the collisional energy transfer in the Sr-Ca system is obtained.Various factors,including field intensity,relative speed,and temperature,which influence the collisional cross section,are discussed for illustrating the features of the Sr-Ca laser-induced collisional energy transfer(LICET) process.The calculated results show that the LICET spectral profiles obviously become narrower when the laser field intensity i...     

Segregation during crystal growth from melt and absorption cross section determination by optical absorption method

Segregation during crystal growth from melt under two conditions is studied by using crystal mass, which can be measured easily, as an independent variable, and a method to determine the effective segregation coefficient and absorption cross section of optical dopant is given. When the segregated solute disperses into the whole or just a part of melt homogenously, the concentration C _s in solid interface will change by different formulas. If the crystal growth interface is conical and segregated solute disperses into melt in total or part, the solute concentration at r = 2/3R, where r is the distance from the growth cross section center and R the crystal radius, is independent on the shape of the crystal growth interface, and its variation at r = 2/3R can be regarded as the result from crystal growth in flat interface. With C _s variation formula in solid and absorption cross section σ for optical dopant, the absorption coefficients along the crystal growth direction can be calculated, and the corresponding experimental value can be obtained through the crystal optical absorption spectra. By minimizing the half sum, whose independent variables are k, ΔW or σ, of the difference square between the calculated and experimental absorption coefficients from one or more absorption peaks along the crystal growth direction, k and σ, or k and ΔW, can be determined at the same time through the Levenberg-Marquardt iteration method. Finally, the effective segregation coefficient k, ΔW and absorption cross sections of Nd:GGG were determined, the results fitted by two formula gave more closed effective segregation coefficient, and the value ΔW also indicates that the segregated dopant had nearly dispersed into the whole melt. Experimental results show that the method to determine effective segregation coefficient k, ΔW and absorption cross sections σ is convenient and reliable, and the two segregation formulas can describe the segregation during the crystal growth from melt relatively commendably. Supported by the National Natural Science Foundation of China (Grant No. 50772112)     

Excitonic optical absorption in semiconductors under intense terahertz radiation

The excitonic optical absorption of GaAs bulk semiconductors under intense terahertz （THz） radiation is investigated numerically. The method of solving initial-value problems, combined with the perfect matched layer technique, is used to calculate the optical susceptibility. In the presence of a driving THz field, in addition to the usual exciton peaks, 2p replica of the dark 2p exciton and even-THz-photon-sidebands of the main exciton resonance emerge in the continuum above the band edge and below the main exciton resonance. Moreover, to understand the shift of the position of the main exciton peak under intense THz radiation, it is necessary to take into consideration both the dynamical Franz-Keldysh effect and ac Stark effect simultaneously. For moderate frequency fields, the main exciton peak decreases and broadens due to the field-induced ionization of the excitons with THz field increasing. However, for high frequency THz fields, the characteristics of the exciton recur even under very strong THz fields, which accords with the recent experimental results qualitatively.