Photoluminescence of Si-based nanotips fabricated by anodic aluminum oxide template

Large-area, high-density silicon-based nanotips were fabricated using electrochemical lithography. The morphology and optical properties of the samples were characterized by atomic force microscopy and photoluminescence. The distribution and size of the silicon-based nanotips were uniform. Two photoluminescence peaks were observed at 585 and 620 nm. The peak centered at 585 nm exhibited a narrow full-width at half maximum. No evident peak energy shift was observed when the measurement temperature was increased from 10 K to room temperature, which suggested that the photoluminescence should be attributed to the interface states and/or defects in the silicon-based nanotips.     

Photoluminescence blue shift of indium phosphide nanowire networks with aluminum oxide coating

This paper describes our finding that optical properties of semiconductor nanowires were modified by depositing a thin layer of metal oxide. Indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst resulting in three‐dimensional nanowire networks, and optical properties were obtained from the collective nanowire networks. The networks were coated with an aluminum oxide thin film deposited by plasma‐enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. A continuous blue shift in photoluminescence spectra was observed when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein–Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from intrinsic negative fixed charges located at the inner oxide surface. Samples were further characterized by scanning electron microscopy, Raman spectroscopy, transmission electron microscopy, and selective area diffractometry to better understand the physical mechanisms for the blue shift. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence of zinc oxide modified by nanopowders

The modifying effect of Al₂O₃, Al₂O₃ · CeO₂, ZrO₂, ZrO₂ · Y₂O₃ nanopowders on the photoluminescence spectra of ZnO powder in the 360–660 nm range is investigated. It is found that the introduction of nanoparticles causes a decrease in the ultraviolet band intensity and an increase in the visual spectral band intensity. The change in the intensity of elementary components of the visible range band during modification seems to be explained by the emergence of oxygen and zinc vacancies (V _O⁺ and V _Zn⁻) and interstitial oxygen ions (O _i ⁻).     

Photoluminescence from Er-doped silicon rich oxide thin films

 Photoluminescence (PL) properties of Er-doped silicon rich oxide thin films deposited on Si substrate by co-evaporation of silicon monoxide and Er under different atmospheres are investigated. The samples exhibit luminescence peak at 1.54 μm which could be assigned to the recombination in intra-4f Er³⁺ transition. PL shows that this transition is highest when ammonia atmosphere is used during deposition followed by an annealing temperature at 850 °C in 95% N₂+5% H₂ gas (forming gas). In fact, we believe that the presence of the N atoms around Er ions increases the intensity of the 1.54 μm luminescence.     

Photoluminescence characterization of silicon nanostructures embedded in silicon oxide

This paper describes a simple method to analyze the photoluminescent characteristics of materials based on embedded light-emitting nanoclusters. Photoluminescence spectra of deposited silicon sub-oxide layers with the same composition and different thicknesses have been obtained. A saturation of the total luminescence intensity is observed with increase in thickness. By analyzing the photoluminescence spectra several optical and structural parameters can be evaluated. We thus propose a model in which the absorption of light from a nanostructure layer implies the possibility of subsequent luminescence and affects the underlying layers as well. By fitting the data to the developed model, two fundamental parameters are extracted: nanostructures absorption probability, which is independent of the emission energy and the spectra of emission probability of an excited nanostructure which fits a Gaussian shape.     

Electrical breakdown of anodic aluminum oxide

Results are presented from a study of electrical breakdown of anodic aluminum oxide in a constant field with a platinum pressure electrode. Statistical breakdown parameters and their dependence on the magnitude and polarity of the applied voltage are obtained. Field and temperature dependences of breakdown delay time over the interval 10^–6–10³ sec are determined. It is shown that the experimental (E) curves can be rectified (in two segments) in the coordinates log E^–1. This indicates a possible contribution to the breakdown mechanism by both tunnel injection of electrons from the cathode and subsequent avalanche multiplication of electrons within the dielectric.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 25–29, April, 1990.In conclusion, the authors thank T. V. Shmidt and E. Ya. Khanin for assistance in the study.     

氢化氧化铝的同位素效应研究

在B3LYP/6-311++G(d,p)水平上预测了Al2O3H3分子的较低能量构型.其基态构型具有C s对称性,电子态为1A′.通过研究Al2O3M3和M2(M=H,D,T)的能量E、定容热容C V和熵S,用电子振动近似讨论了Al2O3+3/2M2→Al2O3M3反应的氢同位素效应,得到了Al2O3氢化的热力学函数?H0,?S0,?G0,及平衡压力与温度的关系.研究表明,氧化物Al2O3吸附氢(氘,氚)反应的同位素排代效应顺序为氚排代氘,氘排代氢,与钛等金属的同位素排代顺序相反.但排代效应都非常弱,且随着温度的增加趋于消失.     

Photoluminescence spectroscopy study on tris(8-hydroxyquinoline) aluminum film

In situ photoluminescence spectroscopy (PL) measurements of tris(8-hydroxyquinoline) aluminum (Alq₃) film were carried out. Upon deposition of Alq₃ on the glass substrate, the PL intensity changes dramatically, while the peak position of Alq₃ emission shows a sharp red-shift from 524 nm at the initial deposition of Alq₃, and tends to a saturation value of 536 nm for the film thickness range from 2 to 500 nm. This red-shift is associated with the change from the 2D to 3D exciton state with increasing Alq₃ film thickness. Temperature dependent PL spectra of Alq₃ films showed, besides the changes in the PL intensity, clearly a blue-shift of Alq₃ emission about 9 nm for the film annealing up to 150 °C, while no any shift of Alq₃ emission was observed for the film annealing below 130 °C. Both changes in PL intensity, and especially in the peak position of Alq₃ emission were attributed to crystallization (thermal) effect of Alq₃ film upon annealing.     

Birefringence in porous anodic aluminum oxide

Birefringence properties of a disordered two-dimensional photonic crystal are demonstrated experimentally for the first time. It is proposed to use porous anodic aluminum oxide, which has anisotropy on the scale of the wavelength of light, as a new birefringent material in the optical range. An original method for studying the birefringence properties of two-dimensional photonic crystals based on the use of monochromatic light is described.     

Indentation deformation of mesoporous anodic aluminum oxide

Mechanical properties of anodic aluminum oxides (AAO) were achieved by means of a scanning electron microscope (SEM), an atomic force microscope (AFM), and indentation measurements. A two-step anodized mesoporous anodic aluminum oxide was successfully fabricated vertically and hollowly. Both microindentation and nanoindentation were carried out. Localized pop-in can be found during nanoindentation due to the collapse of the beneath cylindrical structures. Over a certain load, microindentation may induce radial cracks from the indented edge to outward of the AAO. The underside of the indented AAO sample was milled to figure out the structural changes.     

The dielectric breakdown of anodic aluminum oxide

The dielectric breakdown field of anodic oxide layers on aluminum is independent of thickness in the region 230- 1700 Å and is close to the forming field.     

Intense blue luminescence of anodic aluminum oxide

The luminescence spectra of aluminum oxide with an ordered system of through pores have been studied. The diameter and density of pores were ≈ 50 nm and 1.2 × 10¹⁰ cm^?2, respectively. Amorphous aluminum oxide formed by anodization of aluminum foil in an oxalic acid electrolyte shows intense luminescence in the blue spectral region. Processing of spectra with the use of an oxalic acid approximation by Gaussian curves gives three bands peaking at ～ 382 (3.2 eV), 461 (2.7 eV), and 500 nm (2.5 eV), which correspond to different types of defects. The bands at 382 and 461 nm can be assigned to optical transitions involving F⁺ and F centers (vacancies of oxygen with one or two electrons), respectively. The lower-energy band near 500 nm can be presumably assigned to luminescence from F⁺⁺ centers (vacancy of oxygen without an electron). Analysis of the luminescence excitation spectra has revealed an inhomogeneous character of the distribution of the corresponding luminescence centers in the Al₂O₃ matrix.