后退火处理对铟锡氧化物表面等离激元共振特性的影响

近年来,表面等离激元光子学发展迅速,并取得了众多新成果.重掺杂半导体材料的表面等离激元共振性质的研究,也得到了人们越来越多的关注.本文通过纳米球刻印技术制备准三维二氧化硅纳米球阵列,在阵列上沉积铟锡氧化物薄膜,通过不同条件下的后退火处理改变铟锡氧化物薄膜的载流子浓度和载流子迁移率,并研究随着材料性质的改变其相应表面等离激元共振特性的变化规律.结果表明：退火处理均使铟锡氧化物薄膜的晶粒长大,光学透过率增加;在空气中退火会导致铟锡氧化物薄膜的载流子浓度减少,其表面等离激元共振峰红移;而真空退火则使铟锡氧化物薄膜的载流子浓度增加,共振峰蓝移.这些研究结果可为后续铟锡氧化物表面等离激元材料及器件的研究提供科学依据和实际指导.     

基于Ag纳米棒阵列的表面等离激元微型偏振器

采用静电近似理论计算了Ag纳米棒阵列在不同偏振光入射下的消光光谱。当入射光偏振方向平行于纳米棒长轴时会激发表面等离激元纵向振动模式,而当入射光偏振方向垂直于纳米棒长轴时会激发表面等离激元横向振动模式。基于两种模式共振波长的不同,采用Ag纳米棒阵列可以用来设计高性能的表面等离激元微型偏振器。Ag纳米棒阵列的偏振性能在纵向共振波长明显优于在横向共振波长,通过调节纳米棒的纵横比可以对纵向模式的共振峰位进行大范围调控。结果表明这种微型偏振器所适用的波长能够通过纳米棒的纵横比在可见到近红外波段范围内调控,而消光比和插入损耗能够通过纳米棒的直径和长度实现调控。     

基于棱镜型消逝场耦合增强拉曼/荧光原位光谱检测系统

为解决单一技术在表界面过程研究中的局限性,发展多技术协同配合的综合探测装置具有重要意义。该研究使用Kretschmann棱镜激发银膜表面等离激元极化子(SPP),并在银膜表面修饰具有拉曼及荧光活性的目标分子。利用分子对表面电磁场的散射和吸收,将近场的能量重新发射到远场,实现探测。基于该技术,搭建了一套原位融合表面等离激元共振(SPR)光谱、表面增强拉曼散射(SERS)、表面等离激元增强荧光的检测系统,用于实现高灵敏的表界面事件监控及光谱分析功能,并以Cy5.5@SiO₂@AuNP@4MBA荧光拉曼双探针为标准样品对仪器功能进行验证。该装置在动态调控等离激元器件,生物传感与检测,界面光电催化等领域均有很多潜在应用。     

二维二元碳化硅纳米结构的等离激元激发

基于含时密度泛函理论,研究两种构型的二维二元碳化硅（SiC）纳米结构的等离激元激发.SiC纳米结构有两个等离激元共振带.由于键长的改变,相对于硅烯纳米结构和石墨烯纳米结构,SiC纳米结构的两个等离激元共振带分别发生蓝移和红移.一种SiC纳米结构的等离激元共振激发依赖于边界的构型和纳米结构形貌;另一种SiC纳米结构的等离激元共振激发对于边界构型和纳米结构形貌的依赖性降低.沿不同方向激发时,等离激元共振特性基本相同.     

局域表面等离激元

局域表面等离激元使得贵金属纳米颗粒具有丰富的光学性质,其应用涵盖能源、生物医学、安全、信息、超材料等诸多领域。文章简要介绍局域表面等离激元的基本性质、贵金属纳米结构中的局域表面等离激元共振耦合以及具有局域表面等离激元特性的贵金属纳米结构的一些重要应用。     

非对称银纳米双环表面等离激元光谱特性

贵金属纳米材料在入射光激发下能够产生表面等离激元,即金属表面自由电子产生集体振荡。当其振荡频率与入射光频率相同时,发生表面等离激元共振,形成一种特殊的电磁场模式和光谱特性。利用该电磁场模式和光谱特性, 能够调节金属纳米材料的光谱学行为,例如通过改变金属纳米结构的大小、形状以及周围介质介电常数等参数, 在微纳尺度上实现光谱学信号的有效调控。目前,除了具有一定对称性的贵金属纳米材料被大量研究和应用外,非对称纳米结构的表面等离激元光谱特性也受到广泛关注。研究表明,在可见-近红外波段光谱范围内设计表面等离激元光电传感器件的关键问题在于,如何有效地调节其消光谱的共振波长、半峰宽以及峰值强度等主要特征参数。提出一种基于银纳米双环组成的非对称结构,利用时域有限差分方法,在可见-近红外波段内,通过分别改变银纳米双环的尺寸、间距及入射光偏振方向等参数,计算了该纳米结构在不同条件下的消光谱。结果表明,在0.4～3 μm的消光谱内,入射光能够激发产生两个独立的表面等离激元共振峰。通过研究峰值波长处的电场分布图发现,上述共振峰分别对应两种不同的电磁场模式。结果还表明,消光谱内两个独立的共振峰可以通过改变该双环结构的不同参数,被分别地进行调节。其中,可以通过改变该双环结构的半径来有效调节短波长峰的共振波长和半峰宽,同时保持长波长峰的共振波长和半峰宽基本不变。此外,通过改变两环间距或入射光偏振方向,可以分别以不同趋势来调节两个共振峰的峰值强度。在提出的非对称银纳米双环的消光谱中,获得了能够被分别调节的两个表面等离激元共振峰,研究结果能够为可见-近红外波段内基于银纳米材料光电传感器件的开发设计提供理论基础。     

激发光的表面等离激元增强效应导致的双光子荧光增强(英文)

理论上研究了吸附在金纳米颗粒表面的CdSe量子点的双光子荧光增强效应。在偶极近似下,全面地考虑了金纳米颗粒的存在造成的表面等离激元共振增强效应和以金纳米颗粒作为受体的非辐射能量转移效应,给出了金纳米颗粒对量子点双光子荧光的增强因子。通过数值模拟,给出了将贵金属纳米颗粒更有效地用于增强双光子荧光的方法,即将贵金属纳米颗粒的表面等离激元共振峰调至激发波长处,尽可能地增大激发光的表面等离激元共振增强效应。上述理论分析结果很好地验证了已经报道的实验结果。     

多圆孔周期性银膜阵列结构的光学特性

提出一种多圆孔周期性银膜阵列结构,并利用时域有限差分算法探究该结构的光学特性。计算结果表明,当线性偏振光入射时,该结构表面激发出表面等离激元,且纳米孔间产生了局部表面等离子体共振,使得该结构的异常透射增强。针对这一现象,通过对中心孔与边孔所呈角度、入射光偏振角度、结构参数(中心孔直径、边孔直径、结构厚度、边孔与中心孔的间距)的调控来实现结构光学透射属性的优化。此外,分析所提结构在不同环境折射率条件下透射峰的变化规律,发现该结构也对周围的环境折射率具有较高的敏感度。因此该结构在表面等离激元滤波器和折射率传感器中具有广泛的应用前景。     

纳米Ag材料表面等离子体激元引起的表面增强拉曼散射光谱研究

用热蒸发的方法制备了纳米Ag材料,并用扫描电子显微镜对纳米粒子进行了形貌的表征,通过紫外—可见分光光度计得到Ag纳米粒子的透过谱,得到了Ag纳米粒子的表面等离子体共振的峰值位置.以罗丹明6G为探针分子测定Ag纳米粒子衬底的表面增强拉曼散射效应,通过拉曼散射光谱与透过谱研究了由表面等离子体激元的强极化场引起的表面增强拉曼散射效应,结合透过谱与拉曼增益因子提出了一种描述表面等离子体光学和电学特性的方法,并结合扫描电镜的结果给出了不同结构的纳米Ag材料对表面等离子体激元强度的影响. 关键词： 热蒸发 纳米Ag材料 表面等离子体 表面增强拉曼散射     

表面等离激元增强型光电探测器研究进展

光电探测器可以实现光信号到电信号的转换,在工业、军事、医疗等领域已展现出巨大的应用价值。但是,传统的平直型光电探测器捕获线光的能力较弱,一定程度上限制了响应率等性能指标的进一步提高。而基于贵金属纳米结构的表面等离激元共振可以急剧增强近场区域的(纳米尺度)电场强度和对线光的捕获能力,大幅度地提高光电探测器性能。本文首先介绍了表面等离激元的基本原理。随后,详细介绍了金属纳米颗粒、金属光栅等不同结构的表面等离激元增强型光电探测器研究进展。最后,总结全文并针对表面等离激元增强型光电探测器的发展前景做出了展望。     

退火处理对磁控溅射制备LaCoO_3薄膜性能的影响

采用磁控溅射法在硅衬底上制备了LaCoO_3(LCO)薄膜,研究了退火温度对LCO薄膜组织结构、表面形貌及热电特性的影响,并利用X射线衍射仪、原子力显微镜(AFM)、激光导热仪等对LCO薄膜的晶体结构、表面形貌、热扩散系数等进行测量与表征.结果表明:退火温度对LCO薄膜的结晶度、晶粒尺寸和薄膜表面形貌都有较大影响;退火前后LCO薄膜的热扩散系数都随温度的升高而减小,且变化速率逐渐减缓; LCO薄膜的热扩散系数随退化温度的升高先增大后减小.LCO薄膜经过700℃退火后得到最佳的综合性能,其薄膜表面致密、平整,结晶质量最好,热扩散系数最小,热电性能最好.     

镱铒共掺Al2O3薄膜激光退火研究

讨论了激光退火工艺参量对镱铒共掺Al2O3薄膜表面形貌和退火均匀性的影响。薄膜样品被置放于衰减扩束透镜的3倍焦距位置时,薄膜上8 mm半径区域内近似均匀退火;退火时间为32 s时,表面形貌与退火前基本相同。阈值退火功率为5 W,最佳退火功率为20 W。对相同工艺制备的镱铒共掺Al2O3薄膜分别进行CO2激光退火和热退火处理,光致发光(PL)谱测量表明,前者峰值强度比后者强10倍以上,并且热退火光致发光强度随抽运功率增加出现饱和、下降,而激光退火近似随抽运功率单调线性增强。     

Effect of annealing on the structural, optical and electrical properties of ZnO thin films by spray pyrolysis

Zinc oxide thin films have been deposited on glass substrates at a substrate temperature of 673 K by spray pyrolysis. The samples are annealed in ambient atmosphere at various temperatures. The effect of annealing on structural, electrical, and optical properties of ZnO films has been investigated. X-ray diffraction patterns show that crystallinity of the ZnO films has been improved after annealing. The morphology of ZnO thin films is studied by atomic force microscopy. The tensile strain (compressive stress) is found to decrease with increase in annealing temperature which indicates the relaxation of tensile strain in ZnO thin films. A decrease in energy band gap is observed with increase of annealing temperature. The mechanism of blue-green luminescence of ZnO thin film has been analyzed. The resistivity is found to decrease with annealing temperature.     

Growth of fcc(111) on bcc(110): Influence of growth and annealing temperature on epitaxy and surface morphology for Pd on Cr

The effects of growth versus annealing temperature on epitaxial relationship and surface morphology were studied for Pd(111) films on Cr(110) surfaces. While the epitaxial orientation of the Pd films depends on film thickness as well as on growth temperature, subsequent annealing has no effect on the epitaxial orientation. Instead, additional annealing of room temperature grown films takes the surface morphology from an island to a terrace shape, which was not observed for samples directly grown at elevated temperatures. These different effects that growth and annealing temperature have, help understanding the resulting structure and morphology of the heteroepitaxial system.     

Effects of dodecylamine and dodecanethiol on the conductive properties of nano-Ag films

Nano-Ag particles, with dodecylamine (DDA) and dodecanethiol (DDT) as the protective agent, were prepared and studied in order to investigate the effect of protective agent in the post heat-treatment of nano-Ag films. Results of electrical resistivity, micro-structural evolution and thermal analysis showed that the Ag-DDA films require a lower treatment temperature to convert into conductive materials compared to that of the Ag-DDT films. And the Ag-DDA films also have lower final electrical resistivity as well as more uniform and dense microstructure in comparison with the Ag-DDT films. Further study indicated that Ag-DDA films are thermodynamically unstable and the sinter of Ag-DDA particles could occur spontaneously even at room temperature. FT-IR, ¹H NMR and X-ray diffraction determinations revealed that both DDA and DDT molecules coordinate to the surface of nano-Ag particles through their head-groups. The bonding energy of Ag-S is higher than that of Ag-N and the alkyl chains ordering of chemisorbed DDT is also higher than that of chemisorbed DDA. It is implied that the post heat-treatment temperature and final resistivity of nano-Ag films are associated with the bonding energy and configuration of different capping molecules. Finally the conductive ink was prepared with well dispersed Ag-DDA nanoparticles and the ink-jet printed patterns on PI films show a sheet resistance of 166 mΩ/□ after heat-treating at 140 °C for 60 min.     

Densification study of ITO films during high temperature annealing by GISAXS

Three thermal routes were treated on the sol-gel ITO films, i.e. conventional thermal annealing (CTA), rapid thermal annealing (RTA) and thermal cycle annealing (TCA). The near surface and internal structures of films were characterized by grazing incidence small angle X-ray scattering (GISAXS) technique. It is found that slit-like pores show fractal structures laterally and the near surface is sparser with bigger pores. Ordered pore structure normal to the film appears when films are annealed at high heating rate. The shrinkage of pores is mainly owing to structural relaxation and diffusion during the superheating process. However, the supercooling process has no significant effect on the structures. Furthermore, CTA samples have the greatest porosity and surface roughness due to the prevailing crystallization as well as the coarsening procedure. However small pores inside the films are eliminated at low temperature.     

Influence of thermal annealing on bonding structure and dielectric properties of fluorinated amorphous carbon film

The bond structure and dielectric properties of fluorinated carbon films after thermal annealing in N₂ ambience were studied. The results show that dielectric constant and dielectric loss increased, and optical gap decreased with increasing annealing temperature. The composition and bonding structure of the films were obtained by FTIR and XPS analysis. The data indicate that fluorine-to carbon ratio decreased and CC group increased in the films after the films were annealed. It suggests that the structural and dielectric property changes correlate with the release of fluorine and increase of cross-linking during the annealing.     

Effect of different annealing methods on ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films

0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films were prepared on LaNiO₃/SiO₂/Si substrate by radio frequency magnetron sputtering, and the films were annealed subsequently with repeated many times by two approaches: normal one-step rapid thermal annealing and innovative two-steps rapid thermal annealing. X-ray diffraction demonstrates that all the films were preferred (1 0 0) oriented and an appropriate repeat of annealing process can enhance perovskite phase of the films. Scanning electron microscopy suggests that the films treated by two-steps rapid thermal annealing show crack-free, uniform size grains and dense microstructure. Measurement of remnant polarization and leakage current dependence of electric field confirms that the films treated by two-steps rapid thermal annealing exhibit better ferroelectric properties than the films treated by one-steps rapid thermal annealing. The results reveal that microstructure plays an important role in enhanced ferroelectric properties of the 0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films.     

低温铝诱导晶化制备纳米晶硅薄膜的物相和光学性能研究

采用射频磁控溅射镀膜系统,在玻璃衬底上制备了非晶硅(α-Si)/铝(Al)复合薄膜,结合氮气(N₂)气氛中低温快速光热退火制备了纳米晶硅(nc-Si)薄膜;利用光学显微镜、共焦光学显微仪、X射线衍射(XRD)仪、拉曼散射光谱(Raman)仪和紫外-可见光-近红外分光光度计(UV-VIS-NIR)对纳米晶硅薄膜的表面形貌、物相及光学性能进行了表征,研究了退火工艺对薄膜性能的影响。结果表明： 300 ℃,25 min光热退火可使α-Si/Al膜晶化为纳米晶硅薄膜,晶化率为15.56%,晶粒尺寸为1.75 nm;退火温度从300 ℃逐渐升高到400 ℃,纳米晶硅薄膜晶粒尺寸、晶化率、带隙逐渐增加,表面均匀性、晶格畸变量逐渐减小;退火温度从400 ℃逐渐升高到500 ℃,纳米晶硅薄膜的晶粒尺寸、晶化率继续增加,带隙则逐渐降低;采用纳米晶硅薄膜的吸光模型验证了所制备的纳米晶硅薄膜的光学特性,其光学带隙的变化趋势与吸光模型得出的结果一致。     

Impact of thermal annealing on physical properties of vacuum evaporated polycrystalline CdTe thin films for solar cell applications

A study on impact of post-deposition thermal annealing on the physical properties of CdTe thin films is undertaken in this paper. The thin films of thickness 500 nm were grown on ITO and glass substrates employing thermal vacuum evaporation followed by post-deposition thermal annealing in air atmosphere within low temperature range 150–350 °C. These films were subjected to the XRD, UV‐Vis NIR spectrophotometer, source meter, SEM coupled with EDS and AFM for structural, optical, electrical and surface topographical analysis respectively. The diffraction patterns reveal that the films are having zinc-blende cubic structure with preferred orientation along (111) and polycrystalline in nature. The crystallographic parameters are calculated and discussed in detail. The optical band gap is found in the range 1.48–1.64 eV and observed to decrease with thermal annealing. The current–voltage characteristics show that the CdTe films exhibit linear ohmic behavior. The SEM studies show that the as-grown films are homogeneous, uniform and free from defects. The AFM studies reveal that the surface roughness of films is observed to increase with annealing. The experimental results reveal that the thermal annealing has significant impact on the physical properties of CdTe thin films and may be used as absorber layer to the CdTe/CdS thin films solar cells.