keV 质子辐照对Kapton/Al光学性能的影响

 采用空间综合辐照设备对Kapton/Al薄膜进行了质子辐照地面模拟试验,选取质子能量90 keV,辐照通量5.0×10¹¹ cm¹²·s^-1。通过辐照前后光谱反射系数的变化考察了实验样品的光学性能退化特征。借助于反射光谱和紫外-可见吸收光谱和傅里叶转换红外光谱分析技术分析了辐照后Kapton/Al光学性能的退化机理。研究结果表明：辐照过程中样品表面发生了复杂的化学反应,随着辐照剂量的增加光能隙逐渐减小,Kapton吸收曲线的末端边缘发生红移并且在可见光区吸收强度增加。     

Effects of proton and electron irradiation on the structural and tribological properties of MoS2/polyimide

To study the structural and tribological properties of MoS₂/polyimide (MoS₂/PI) composite under the irradiation environment of proton and electron, the MoS₂/PI composites were investigated in a ground-based simulation facility, in which the energy of proton and electron was 25 keV and the flux was 2.5 × 10¹⁴ cm⁻² s⁻¹. The experimental results revealed that the simplex and combined irradiation of proton and electron induced bond break and cross-link, proton irradiation can break the PI bond easier than electron irradiation and then formed the graphite-like structure at surface area of the samples. Irradiation decreased the friction coefficient and wear rate remarkably of the composites comparing with the pristine one. The wear rate increased with the increasing of the proton and combined radiation time, and decreased with the electron radiation conditions.     

60keV质子辐照对TiNi记忆合金薄膜马氏体相变的影响

 利用磁控溅射的方法在氧化后的单晶Si基片上制备了TiNi形状记忆合金薄膜，利用示差扫描量热法和原位X射线衍射研究了薄膜的马氏体相变特征。通过60keV质子注入（辐照）薄膜样品研究了H+离子对合金薄膜马氏体相变特征的影响，结果表明氢离子注入后引起了马氏体相变开始Ms和结束点Mf以及逆马氏体相变开始As和结束温度Af的下降，而对R相变开始Rs和结束温度Rf影响不大。掠入射X射线衍射表明H+离子注入后有氢化物形成。H⁺离子注入形成的氢化物是引起相变点的变化的主要因素。     

Effects of proton irradiation on structure of NdFeB permanent magnets studied by X-ray diffraction and X-ray absorption fine structure

The effects of proton irradiation on the structure of NdFeB permanent magnet were investigated by X-ray diffraction and X-ray absorption fine structure (XAFS). The results reveal that proton irradiation has no effect on the long-range structure, but significantly affects the atomic local structure of the NdFeB magnet. The alignment degree of the magnet decreases and the internal stress of the lattice increases after proton irradiation. XAFS results show that the coordination number of Fe-Nd in the first neighboring coordination shell of the Fe atoms decreases and the disorder degree increases.     

质子对BaTiO3薄膜辐照损伤的计算机模拟

本文先应用分子动力学模拟BaTiO₃体系在初级击出原子(primary knock-on atom, PKA)轰击下缺陷产生和复合的动力学过程, 模拟结果表明：PKA的方向和能量对缺陷数目有重要影响, 并计算了Ba, O和Ti原子的平均位移阈能分别为69 eV, 51 eV和123 eV, 远大于SRIM程序默认的位移阈能25 eV. 然后应用蒙特卡罗软件包SRIM, 模拟质子在BaTiO₃薄膜中的能量损失过程, 比较位移阈能对模拟结果的影响, 分析质子能量和入射角度对空位数量以及分布的影响. 结果表明空位数量随着质子能量增加而增加, 增加的速率随能量的增加是降低的;当入射角度大于60°, 空位数量随入射角增大而明显减少.     

Realization of conformal doping on multicrystalline silicon solar cells and black silicon solar cells by plasma immersion ion implantation

Emitted multi-crystalline silicon and black silicon solar cells are conformal doped by ion implantation using the plasma immersion ion implantation （PⅢ） technique. The non-uniformity of emitter doping is lower than 5 %. The secondary ion mass spectrometer profile indicates that the PⅢ technique obtained 100-rim shallow emitter and the emitter depth could be impelled by furnace annealing to 220 nm and 330 nm at 850 ℃ with one and two hours, respectively. Furnace annealing at 850 ℃ could effectively electrically activate the dopants in the silicon. The efficiency of the black silicon solar cell is 14.84% higher than that of the mc-silicon solar cell due to more incident light being absorbed.     

Optical and photoluminescent properties of plasma polymer films used in electroluminescent display structures

The optical and photoluminescent properties of plasma polymer layers synthesized from hexamethyldisiloxane are examined. The value of the polymer layer transparence is in the limits from 55% at 400 nm to 88% at 800 nm. Photoluminescence is stimulated by using the spectral line λ=365 nm emitted by a Hg spectral lamp.The organosilicon plasma polymers are included as protective and capsulating layers in electroluminescent (EL) structures. The structure obtained is characterized by a significant increase in emission brightness, compared to inorganic protective layers. For EL structures with a chalcogenide protective layer the increase is more than 6 times and for structures with heterogeneous matrix on the base of TiO₂ it is more than 20 times. As a stable covering the organosilicon plasma polymer increases the lifetime of the EL structures too.     

Conductivity properties of proton transfer and influence of temperature on it in hydrogen-bonded systems

We study and calculate the mobility and conductivity of proton transfer and influence of temperature on it by pang's dynamic model in hydrogen bonded systems, which coincide with experiments. We further study the mechanism of magnetization of ciguid water in the basis of this model.     

Influence of proton irradiation on the photoluminescence spectra of zinc oxide modified by ZrO2 and ZrO2·Y2O3 nanopowders

ZnO powder photoluminescence spectra at 360-660 nm modified and unmodified by ZrO₂, ZrO₂Y₂O₃ nanopowders before and after 100 keV proton irradiation were investigated. It was found that introduction of nanoparticles led to ultraviolet band intensity decrease and to visual spectrum band intensity increase. Extinction of intensity occurs under the effect of protons in both bands of luminescence. Decomposition of spectra into elementary defects and analysis of their area change during modification and irradiation were carried out.     

热退火对等离子体增强化学气相沉积SiCOH薄膜结构与性能的影响

热退火是多孔低介电常数薄膜制备过程中的重要一环, 对薄膜结构及性能具有重要影响. 本文以四乙氧基硅烷和双戊烯为前驱体, 采用等离子体增强化学气相沉积方法制备了SiCOH薄膜, 对其进行了氮气氛围下的热退火处理, 分析了热退火对薄膜结构与性能的影响, 探究了退火过程中薄膜结构变化的可能的反应机理. 傅里叶变换红外光谱和固体核磁共振谱结果表明, 沉积薄膜是一种有机无机杂化薄膜. 退火过程中, 薄膜中的-CH₂, -CH₃等有机组分被分解除去, 形成了以稳定的Si-O-Si等无机组分为骨架的多孔结构, 并通过氮气吸附/脱附等温线测试得到了验证. 在此期间, 薄膜骨架微结构亦发生一系列调整, C=C, Si-C含量增加, Si、O、C等元素间发生进一步键合. C=C 含量的提高, 使得薄膜的消光系数和漏电流密度增大. 实验证明, 退火后薄膜具有低折射率、低介电常数特性, 是一类具有优异的介电性能和力学性能的材料, 作为芯片后端互连层间介质具有极大的应用潜力.     

Role of nickel and manganese in recovery of resistivity in iron-based alloys after low-temperature proton irradiation

This study investigates the recovery of electric resistivity in pure iron, Fe–0.6Ni and Fe–1.5Mn as related to isochronal annealing following 1 MeV proton irradiation at lower temperature than 70 K, focusing on the relationship between solute atoms and irradiation defects. Both nickel and manganese prevent stage I_D recovery, which corresponds to correlated recombination. Stage II recovery is also changed by the addition of a solute, which corresponds to the migration of small interstitial clusters. In both pure iron and Fe–0.6Ni, no evident difference was observed in the stage III region, which corresponds to the migration of vacancies. In contrast, two substages appeared in the Fe–1.5Mn at a higher temperature than stage III_B appeared in pure iron. These substages are considered to represent the release of irradiation-induced defects, which was trapped by manganese.     

Transmission characteristics of electromagnetic waves in a semicircular plasma filament layer generated by a femtosecond laser

The transmission characteristics of electromagnetic (EM) waves in a semicircular plasma filament layer generated by a femtosecond laser were studied in a wide frequency band including radar waves. We have focussed on the influence of plasma parameters and filament arrangement based on the diffraction and superposition theory of EM waves on the transmittance. A numerical simulation model using the current density convolution finite-difference time-domain method was constructed in a semicircular multilayer filament structure, and the transmission characteristics of spherical EM waves were examined. The simulation results showed that in this semicircular structure, the transmittance was periodically changed at a frequency interval corresponding to the thickness of the filament channel. This phenomenon was more pronounced as the number of the filament layers increased. In the lower band (<30 GHz), there was little change in the transmittance according to layer-to-layer distance, but in the higher band (>30 GHz), it changed irregularly. On the contrary, for the electron number density, it changed regularly in the lower frequency and hardly changed in the higher frequency. When the number of layers was 3 or more, the transmittance became 0 at the centre of the channel, and a discontinuous interference pattern appeared more clearly as the frequency increased.     

Modifications induced by gamma irradiation upon structural,optical and chemical properties of polyamide nylon-6,6 polymer

The effects of gamma rays were studied on the optical, structural and chemical properties of the PA-66 polymer samples. The polymer samples obtained from Goodfellow (Cambridge, UK) were irradiated with gamma rays at various doses ranging from 100 to 1250 kGy. The pristine and gamma rays irradiated samples were characterized by UV–visible (UV–VIS) spectroscopy, X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. UV–VIS shows a shift in absorption toward the visible region for irradiated samples and a decrease in band gap energy (E_g). The XRD analyses show an increase in the crystalline nature of the polymer at higher doses as a result of significant decrease in the peak width of XRD patterns. The FTIR spectra show decrease in intensity and shift of various bands with increase in gamma dose.     

Influence of reaction gas flows on the properties of SiGe:H thin film prepared by plasma assisted reactive thermal chemical vapour deposition

A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition （VHFPA-RTCVD）, is introduced to prepare SiGe：H thin films on substrate kept at a lower temperature. In the previous work, reactive thermal chemical vapour deposition （I~TCVD） technology was successfully used to prepare SiGe：H thin films, but the temperature of the substrate needed to exceed 400℃. In this work, very high frequency plasma method is used to assist RTCVD technology in reducing the temperature of substrate by largely enhancing the temperature of reacting gases on the surface of the substrate. The growth rate, structural properties, surface morphology, photo- conductivity and dark-conductivity of SiGe：H thin films prepared by this new technology are investigated for films with different germanium concentrations, and the experimental results are discussed.     

Structural, mechanical and hydrophobic properties of fluorine-doped diamond-like carbon films synthesized by plasma immersion ion implantation and deposition (PIII–D)

Fluorine-doped diamond-like carbon (a-C:F) films with different fluorine content were fabricated on Si wafer by plasma immersion ion implantation and deposition (PIII–D). Film composition and structure were characterized by X-ray photoelectron spectroscopy (XPS) and Raman scattering spectroscopy. Surface morphology and roughness were analyzed by atomic force microscopy (AFM). Hardness and scratch resistance were measured by nano-indentation and nano-scratch, respectively. Water contact angles were measured by sessile drop method. With the increase of the CF₄ flux, fluorine content was gradually increased to the film. Raman spectra indicates that these films have a diamond-like structure. The addition of fluorine to diamond-like carbon films had a critical influence on the film properties. The film surface becomes more smoother due to the etching behavior of F⁺. Hardness was significantly reduced, while the scratch resistance results show that these films have a fairly good adhesion to the substrate. Evident improvements of the hydrophobicity have been made to these films, with contact angles of double-stilled water approaching that of polytetrafluoroethylene (PTFE). Our study suggests that broad application regions of the fluorine-doped amorphous carbon films with diamond-like structure, synthesized by PIII–D, can be extended by combining the non-wetting properties and mechanical properties which are far superior to those of PTFE.     

Optical and photocatalytic properties of nanocrystalline TiO2 synthesised by solid-state chemical reaction

Nanoparticulate TiO₂ is of interest for a variety of technological applications, including optically transparent UV-filters and photocatalysts for the destruction of chemical waste. The successful use of nanoparticulate TiO₂ in such applications requires an understanding of how the synthesis conditions effect the optical and photocatalytic properties. In this study, we have investigated the effect of heat treatment temperature on the properties of nanoparticulate TiO₂ powders that were synthesised by solid-state chemical reaction of anhydrous TiOSO₄ with Na₂CO₃. It was found that the photocatalytic activity increased with the heat treatment temperature up to a maximum at 600 °C and thereafter declined. In contrast, the optical transparency decreased monotonically with the heat treatment temperature. These results indicate that solid-state chemical reaction can be used to prepare powders of nanoparticulate TiO₂ with properties that are optimised for use as either optically transparent UV-filters or photocatalysts.     

Improvement in micro-structural and mechanical properties of zinc film by surface treatment with low temperature argon plasma

Nanocrystalline zinc films were deposited on gold coated borosilicate glass substrates by thermal evaporation method using zinc powders as the source material and then treated with argon plasma at various temperatures. From X-ray diffraction study, the as-deposited films are found to be metallic Zn and polycrystalline in nature. The crystalline nature improves with the increase of temperature up to 200 °C and decreases with the further increase of temperature to 300 °C. The binding energy observed for Zn 2p_3/2, and the binding energy separation between Zn 2p_3/2 and Zn 2p_1/2 in the X-ray photoelectron spectrum indicate that the films are metallic zinc films. Transmission electron microscopic study shows hexagonal shaped grains having size ∼58 nm upon treatment with Ar plasma. It is clearly shown the grain growth and distinct grain boundary with the increase in temperature. The average Young's modulus (E) and hardness (H) are measured to be 84 GPa and 4.0 GPa for as-deposited film, whereas 98 GPa and 5.8 GPa for plasma treated film at 200 °C. The enhancement in mechanical properties is attributed to improvement in crystalline nature of the film and better interlinking between grains and boundaries.     

Optical and mechanical properties of alumina films fabricated on Kapton polymer by plasma immersion ion implantation and deposition using different biases

Alumina films are fabricated on Kapton polymer by aluminum plasma immersion ion implantation and deposition in an oxidizing ambient and the effects of the bias voltage on the film properties are investigated. Rutherford backscattering spectrometry (RBS) reveals successful deposition of alumina films on the polymer surface and that the O to Al ratio is higher than that of stoichiometric Al₂O₃. The thickness of the modified layers decreases from 200 to 120 nm when the bias voltage is increased from 5 to 20 kV. Our results indicate that higher bombardment energy may lead to higher crack resistance and better film adhesion. However, a higher sample bias degrades the optical properties of the films as indicated by the higher absorbance and lower energy band gap. Therefore, the processing voltage must be optimized to yield a protective layer with the appropriate thickness, superior optical properties, as well as high crack resistance.     

Predictive estimation of vacuum ultraviolet emission intensity in a low-pressure inductively coupled hydrogen plasma based on the branching ratio technique

Vacuum ultraviolet (VUV) emission has recently attracted attention in low pressure processing plasmas because of the possibility of high-energy photon damages on the substrates. To quantify the VUV induced damages during the plasma processes, it is need to use of a VUV spectrometer equipped with vacuum systems not readily available in industries. In this work, therefore, we report a simple method to estimate the VUV emission intensity of hydrogen plasmas utilizing a conventional visible spectrometer widely used in plasma processes. From the measurement of hydrogen emission spectra in the visible wavelength region, the VUV emission line (Lyman-β) was calculated using the branching ratio technique and enabled the estimation of Lyman-α emission intensity based on the Boltzmann relation with given plasma parameters. In addition, it was found that the method could also predict the VUV emission intensity for high density hydrogen plasma cases by considering the self-absorption effect by hydrogen atoms.     

The high deposition of microcrystalline silicon thin film by very high frequency plasma enhanced chemical vapour deposition and the fabrication of solar cells

This paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with Hchemical vapour deposition, plasma deposition, solar cells, crystallinityProgram supported by the State Key Development Program for Basic Research of China (Grant No 2006CB202601), and Basic Research Project of Henan Province in China (Grant No 072300410140).7280N, 7830G, 8115HThis paper reports that the intrinsic microcrystalline silicon ($\mu $c-Si:H) films are prepared with plasma enhanced chemical vapour deposition from silane/hydrogen mixtures at 200\du\ with the aim to increase the deposition rate. An increase of the deposition rate to 0.88\,nm/s is obtained by using a plasma excitation frequency of 75\,MHz. This increase is obtained by the combination of a higher deposition pressure, an increased silane concentration, and higher discharge powers. In addition, the transient behaviour, which can decrease the film crystallinity, could be prevented by filling the background gas with H$_{2}$ prior to plasma ignition, and selecting proper discharging time after silane flow injection. Material prepared under these conditions at a deposition rate of 0.78\,nm/s maintains higher crystallinity and fine electronic properties. By H-plasma treatment before i-layer deposition, single junction $\mu $c-Si:H solar cells with 5.5{\%} efficiency are fabricated.