Temperature-dependent magnetization in (Mn, N)-codoped ZnO-based diluted magnetic semiconductors

The influences of Mn doping on the structural quality of the Zn_xMn_1−xO:N alloy films have been investigated by XRD. Chemical compositions of the samples (Zn and Mn content) and their valence states were determined by X-ray photoelectron spectrometry (XPS). Hall effect measurements versus temperature for Zn_xMn_1−xO:N samples have been designed and studied in detail. The ferromagnetic transitions happened at different T_C should explain that the magnetic transition in field-cooled magnetization of Zn_1−xMn_xO:N films at low temperature is caused by the strong p-d exchange interactions besides magnetic transition at 46 K resulting from Mn oxide, and that the room temperature ferromagnetic signatures are attributed to the uncompensated spins at the surface of anti-ferromagnetic nano-crystal of Mn-related Zn(Mn)O.     

Nanoscratch study of Zn1−xMnxO heteroepitaxial layers

We investigated the nanotribological properties of Zn_1−xMn_xO epilayers (0 ≤ x ≤ 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (μ) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques.The nanoscratch system gave the μ value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200 nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn_1−xMn_xO epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn_1−xMn_xO epilayers can be identified by their nanotribological behavior.     

BiFeO3/Zn1−xMnxO bilayered thin films

BiFeO₃/Zn_1−xMn_xO (x = 0-0.08) bilayered thin films were deposited on the SrRuO₃/Pt/TiO₂/SiO₂/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2P_r ∼ 121.0-130.6 μC/cm² was measured for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO (x = 0.04) bilayer exhibits a highest M_s value of ∼15.2 emu/cm³, owing to the presence of the magnetic Zn_0.96Mn_0.04O layer with an enhanced M_s value.     

No room temperature ferromagnetism in Mn over-doped Zn1−xMnxO (x>0.02)

Mn-doped ZnO samples having composition Zn_1−xMn_xO (x=0.02, 0.04 and 0.05) were synthesized by solid state reaction technique with varying concentration of Mn from 0.02 to 0.05. Evidence of room temperature ferromagnetism was observed only in the composition Zn_0.98Mn_0.02O sintered at 500 °C. Our XRD pattern confirms the presence of Mn₃O₄ impurity phase in all the Zn_1−xMn_xO samples with the exception of Zn_0.98Mn_0.02O. We emphasize that the appearance of Mn₃O₄ phase in the system forbids the exchange type of interaction between the Mn ions and suppresses the ferromagnetism in all the Mn over-doped Zn_1−xMn_xO (x>0.02) system. SEM microstructure study also supports the interruption of exchange type of interaction inside the system with the increase in Mn concentration in the sample. Interestingly, for this particular composition, Zn_0.98Mn_0.02O sintered at 500 °C, glassy ferromagnetism type of transition is observed at low temperature. This type of transition is attributed to the formation of the oxides of Mn clusters at low temperature.     

Ferromagnetism in amorphous Ge1−xMnx grown by low temperature vapor deposition

Magnetic properties of amorphous Ge_1−xMn_x thin films were investigated. The thin films were grown at 373 K on (100) Si wafers by using a thermal evaporator. Growth rate was ∼35 nm/min and average film thickness was around 500 nm. The electrical resistivities of Ge_1−xMn_x thin films are 5.0×10⁻⁴∼100 Ω cm at room temperature and decrease with increasing Mn concentration. Low temperature magnetization characteristics and magnetic hysteresis loops measured at various temperatures show that the amorphous Ge_1−xMn_x thin films are ferromagnetic but the ferromagnetic magnetizations are changing gradually into paramagnetic as increasing temperature. Curie temperature and saturation magnetization vary with Mn concentration. Curie temperature of the deposited films is 80-160 K, and saturation magnetization is 35-100 emu/cc at 5 K. Hall effect measurement at room temperature shows the amorphous Ge_1−xMn_x thin films have p-type carrier and hole densities are in the range from 7×10¹⁷ to 2×10²² cm⁻³.     

Synthesis and structural,magnetic characterization of Zn(Mn)O diluted magnetic semiconductor

The bulk samples with nominal composition Zn_1−x Mn_x O [x = 5% and 7%] were synthesized at 930 °C by Standard Solid State Reaction method. The structural analysis reveals the single phase nature. The Topography study indicates the distribution of the particles. Magnetic property was affirmed by Vibrating Sample Magnetometer, Zn_1−x Mn_x O (with x = 5%), low concentration of dopant shows good ferromagnetism compared to high concentration in Zn_1−x Mn_x O (with x = 7%).     

Optical properties and mechanical characteristics of transparent nanostructured Zn1−xMnxO thin films

Uniform and transparent thin films of Zn_1−xMn_xO (0?x?0.10) were fabricated by a sol-gel spin coating method. XRD results indicated the hexagonal structure of ZnO as the primary phase at all concentrations (x) of Mn. However, at x?0.035, Mn₃O₄ (tetragonal) is observed as the secondary phase, which was confirmed by selected-area electron diffraction patterns. SEM and TEM results showed a tendency of grains to arrange into wire-shaped morphologies, leading to elongated needle-like structures at high Mn addition. Increasing Mn content in the range 0?x?0.10 led to quenching of photoluminescence, increase in the band gap (E_g) from 3.27 to 3.33 eV, and increase in film thickness, refractive index and extinction coefficient of Zn_1−xMn_xO thin films. The residual stress evaluated was compressive in all cases and found to increase by an order of magnitude with addition of Mn. Furthermore, an overall increase in microhardness and yield strength of Zn_1−xMn_xO thin films at higher Mn concentrations is attributed to change in microstructures, presence of secondary phase and increase in film thickness.     

Fabrication and magnetic property analysis of monodisperse manganese-zinc ferrite nanospheres

Monodisperse Mn-Zn ferrite (Mn_1−xZn_xFe₂O₄) nanospheres have been prepared via a simple solvothermal method. The as-synthesized samples were characterized in detail by X-ray diffraction pattern (XRD), transmission electron microscope (TEM), high-solution transmission electron microscope (HRTEM), select area electron diffraction pattern (SAED), scanning electron microscope (SEM), and vibrating sample magnetometer (VSM). The results show that a large number of the high-purity Mn_1−xZn_xFe₂O₄ nanocrystallites were synthesized and these nanocrystallites oriented aggregated to nanospheres. The dependence of magnetic properties of Mn_1−xZn_xFe₂O₄ nanospheres on the composition content x of Zn was studied. The maximum saturation magnetization value of the as-prepared sample (Mn_0.6Zn_0.4Fe₂O₄) reached 52.4 emu g⁻¹.     

Structural, chemical and magnetic investigations of polycrystalline Zn1−xMnxO

Present study reports the detailed structural and magnetic, as well as chemical analysis of polycrystalline Zn_1−xMn_xO (where x=0, 0.005, 0.01, 0.03, 0.05 and 0.1) samples synthesized by the high-temperature solid state reaction route. X-ray diffraction studies reveal the presence of secondary phase for higher Mn-doping concentrations (x≥0.03). Secondary phase formation having spinel structure is confirmed and reported as an evidence for the first time using transmission electron microscopy study. Chemical investigations using X-ray photoelectron spectroscopy showed the presence of Mn in two valence states. From the observed results we are of the opinion that Zn²⁺ ions, mainly present at or near grain boundaries, diffuse into manganese oxide to form a stable spinel phase Zn_xMn_3−xO₄ at or near the grain boundaries of ZnO/Zn_1−xMn_xO. Magnetization measurements did not show any magnetic transition down to 5 K.     

Reentrant spin glass behavior and large initial permeability of Co0.5−xMnxZn0.5Fe2O4

A series of polycrystalline ferrites having nominal chemical composition Co_0.50−xMn_xZn_0.5Fe₂O₄ (0<x<0.4) have been synthesized by the solid-state reaction technique. The XRD analysis confirms single phase cubic spinel structure for all compositions. Lattice constant increases from 0.84195 to 0.84429 nm with the increasing Mn content and obeys Vegard's law. The average grain size increases by increasing both Mn content and sintering temperatures. Room temperature saturation magnetization increases for x=0.1 and decreases for increasing Mn content. The coercivity decreases with increasing Mn content due to the decrease of anisotropy constant. A reentrant spin glass behavior of these samples is observed from the zero field cooled magnetization measurements. The real part of the initial permeability increases by increasing both Mn content and sintering temperatures. This is due to the homogeneous grain growth and densification of the ferrites. The highest initial permeability 137 is observed for x=0.4 sintered at 1573 K on the other hand, the highest relative quality factor (2522) is obtained for the sample Co_0.2Mn_0.3Zn_0.5Fe₂O₄ sintered at 1523 K. The Mn substituted Co_0.50−xMn_xZn_0.5Fe₂O₄ ferrites showed improved magnetic properties.     

Structural and photoluminescence analysis of Zn1 − xMnxO nanocrystalline powders

This Letter reports on structural and photoluminescence properties of Zn_1 − xMn_xO nanocrystalline powders, which were synthesized by using oxalate precursor decomposition method. From the XRD features, we have noticed that all samples exhibit wurtzite crystal structure. The origin of photoluminescence properties of Mn doped and undoped ZnO have been discussed.     

Production of bulk dilute ferromagnetic semiconductor by mechanical milling

We tried to prepare the bulk dilute ferromagnetic semiconductor (DMS) by mechanical milling (MM). Experimental results were as following: (1) The observation of X-ray diffraction and transmitting electron microscopy showed that the particle diameter of host ZnO powder were reduced to about 10 nm by MM. (2) The MM for the mixtures of V₂O₅/ZnO or γ-Fe₂O₃/ZnO realizes the V- or Fe-doped ZnO nano-powders. (3) The values of magnetization under the field of 5 kOe were nearly saturated to 0.8×10⁻³ to 3×10⁻³ μ_B/V-ion for V_xZn_1−xO (x=0.05, 0.1 and 0.2), and 0.2–0.3 μ_B/Fe-ion for Fe_xZn_1−xO (x=0.05 and 0.1) at room temperature. The above results show that the ferromagnetic DMS powder of V_xZn_1−xO and Fe_xZn_1−xO were successfully prepared by MM method.     

On the structural analysis and magnetic behavior of heavily doped Zn1−xMnxO nanopowders synthesized by wet chemistry method

Nanocrystalline Zn_1−xMn_xO(x=0−0.1) powders are prepared by polymeric precursor method and their structural and magnetic properties carefully studied. X-ray diffraction studies and Raman spectroscopy reveal that Mn²⁺ ions have substituted the Zn²⁺ ion without changing the würtzite structure of pristine ZnO up to Mn concentrations x≤0.05. The presence of a secondary phase, related to the solubility of Mn in ZnO is evident for higher Mn-doping concentrations. The negative value obtained for the Curie–Weiss temperature indicates that the interactions between the Mn ions are predominantly antiferromagnetic. Thus, no bulk ferromagnetism is evident in any of the studied samples.     

Magnetism in Zn1−xMnxO crystal prepared by hydrothermal method

Crystal Zn_1−xMn_xO magnetic semiconductors have been obtained by using a hydrothermal method for the first time at temperature of 703 K with substituent fraction ranging from x=0 to 0.04. X-ray diffraction and optical absorption measurements provide evidence for the locating at Zn site of Mn ion in ZnO crystals. The non-monotonic variation of band gap indicates the short-ranged interactions of sp-d electrons. However, no evidence of ferromagnetism is found in these systems down to T=2 K. The magnetization is found to be contributed from both free spins and spins associated with antiferromagnetic clusters. The antiferromagnetism is confirmed by fitting a Curie-Weiss function.     

Influence of manganese substitution and annealing temperature on the formation,microstructure and magnetic properties of Mn–Zn ferrites

The effects of annealing temperature and manganese substitution on the formation, microstructure and magnetic properties of Mn_xZn_1−xFe₂O₄ (with x varying from 0.3 to 0.9) through a solid-state method have been investigated. The correlation of the microstructure and the grain size with the magnetic properties of Mn–Zn ferrite powders was also reported. X-ray diffraction (XRD), a scanning electron microscope (SEM) and a vibrating sample magnetometer (VSM) were utilized in order to study the effect of variation of manganese substitution and its impact on crystal structure, crystalline size, microstructure and magnetic properties of the ferrite powders formed. The XRD analysis showed that pure single phases of Mn–Zn ferrites were obtained by increasing the annealing temperature to 1200–1300 °C. Increasing the annealing temperature to ?1300 °C led to abnormal grain growth with inter-granular pores and this led to a decrease in the saturation magnetization. Moreover, an increase in the Mn²⁺ ion substitution up to x=0.8 increased the lattice parameter of the formed powders due to the high ionic radii of the Mn²⁺ ion. Mn–Zn ferrites phases were formed and the positions of peaks were shifted by substituting manganese. The average crystalline size was increased by increasing the annealing temperature and decreased by increasing the substitution by manganese up to 0.8. The average crystalline size was in the range 95–137.3 nm. The saturation magnetization of the Mn–Zn-substituted ferrite powders increased continuously with an increase in the Mn concentration up to 0.8 at annealing temperatures of 1200–1300 °C. Further increase of Mn substitution up to 0.9 led to a decrease of saturation magnetization. The saturation magnetization increased from 17.3 emu/g for the Mn_0.3Zn_0.7Fe₂O₄ phase particles produced to 59.08 emu/g for Mn_0.8Mn_0.2Fe₂O₄ particles.     

The important role of Mn in the room-temperature ferromagnetism of Mn-doped GaN films

Mn-doped GaN films (Ga_1−xMn_xN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga_1−xMn_xN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn³⁺ due to the thermal treatment. Mn³⁺, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn³⁺ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn³⁺ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase Mn_xGa_y formation.     

Structural and magnetic properties of Cu1−xMnxO nanocrystal prepared by combustion synthesis

Nanoscale Cu_1−xMn_xO powder is prepared by using the combustion synthesis technique with two different fuels. The structural properties of the powder are determined using Rietveld refinement of X-ray diffraction data, high-resolution transmission electron microscopy, and Fourier transform infrared spectroscopy, while its magnetic properties are analyzed by means of hysteresis loop and temperature dependence of magnetization. The results show that (1) the Cu_1−xMn_xO nanocrystal is of monoclinic CuO structure, with grain size of 10-30 nm varying with the type of fuel, the nitrate/fuel ratio (N/F), and the Mn concentration, the doping of Mn has a little influence on the lattice parameters; (2) when the Mn concentration is higher than 7%, a small amount of impurity phase of CuMn₂O₄ appears and annihilates the potential cation vacancies; (3) all of the samples with x≥5% exhibit low-temperature ferromagnetism with the Curie temperature of ∼90 K, which increases slightly by raising the Mn concentration; (4) the paramagnetic moment per Mn ion is around 2-4 bohr magneton above the Curie temperature, which decreases with increasing Mn concentration, implying that the nearest Mn ions are antiferromagnetically coupled and the ferromagnetic order could originate from the super-exchange of next nearest Mn ions along the [1 0 1?] direction.     

Room-temperature ferromagnetism in Zn1−xMnxO

In view of recent controversies on above room-temperature ferromagnetism (RTFM) in transition-metal-doped ZnO, the present paper aims to shed some light on the origin of ferromagnetism by investigating annealing effects on structure and magnetism for polycrystalline Zn_1−xMn_xO powder samples prepared by solid-state reaction method and annealed in air at different temperatures. Magnetic measurements indicate that the samples are ferromagnetic at room temperature (RTFM). Room temperature ferromagnetism has been observed in the sample annealed at a low temperature of 500 °C with a saturated magnetization (M_s) of 0.159 emu/g and a coercive force of 89 Oe. A reduction in RTFM is clearly observed in the sample annealed at 600 °C. Furthermore, the saturation magnetic moment decreases with an increase in grain size, suggesting that ferromagnetism is due to defects and/or oxygen vacancy confined to the surface of the grains. The experimental results indicate that the ferromagnetism observed in Zn_1−xMn_xO samples is intrinsic rather than associated with secondary phases.     

Room-temperature ferromagnetism in Sn1−xMnxO2 nanocrystalline thin films prepared by ultrasonic spray pyrolysis

Sn_1−xMn_xO₂ (x=0.01-0.05) thin films were synthesized on quartz substrate using an inexpensive ultrasonic spray pyrolysis technique. The influence of doping concentration and substrate temperature on structural and magnetic properties of Sn_1−xMn_xO₂ thin films was systematically investigated. X-ray diffraction (XRD) studies of these films reflect that the Mn³⁺ ions have substituted Sn⁴⁺ ions without changing the tetragonal rutile structure of pure SnO₂. A linear increase in c-axis lattice constant has been observed with corresponding increase in Mn concentration. No impurity phase was detected in XRD patterns even after doping 5 at% of Mn. A systematic change in magnetic behavior from ferromagnetic to paramagnetic was observed with increase in substrate temperature from 500 to 700 °C for Sn_1−xMn_xO₂ (x=0.01) films. Magnetic studies reveal room-temperature ferromagnetism (RTFM) with 3.61×10⁻⁴ emu saturation magnetization and 92 Oe coercivity in case of Sn_1−xMn_xO₂ (x=0.01) films deposited at 500 °C. However, paramagnetic behavior was observed for the films deposited at a higher substrate temperature of 700 °C. The presence of room-temperature ferromagnetism in these films was observed to have an intrinsic origin and could be obtained by controlling the substrate temperature and Mn doping concentration.     

Synthesis and magnetic properties of Mn doped ZnO nanowires

Mn doped ZnO nanowires have been synthesized using a simple autocombustion method. The as-synthesized Mn doped ZnO nanowires were characterized by X-ray diffraction and transmission electron microscopy. An increase in the hexagonal lattice parameters of ZnO is observed on increasing the Mn concentration. Optical absorption studies show an increment in the band gap with increasing Mn content, and also give evidence for the presence of Mn²⁺ ions in tetrahedral sites. All Zn_1−xMn_xO (0≤x≤0.25) samples are paramagnetic at room temperature. However, a large increase in the magnetization is observed below 50 K. This behavior, along with the negative value of the Weiss constant obtained from the linear fit to the susceptibility data below room temperature, indicate ferrimagnetic behavior. The origin of ferrimagnetism is likely to be either the intrinsic characteristics of the Mn doped samples, or due to some spinel-type impurity phases present in the samples that could not be detected.