Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

Hf-doped Ta₂O₅ thin films are studied with respect to their composition, dielectric and electrical properties. The incorporation of Hf is performed by sputtering of a 0.7 nm thick Hf layer on top of Ta₂O₅ and subsequent annealing to stimulate diffusion of Hf into Ta₂O₅ and their intermixing. The elemental in-depth distribution of the films is investigated by the time of flight secondary ion mass spectroscopy (ToF-SIMS), which has revealed that Hf and Ta₂O₅ are intermixed throughout the whole thickness. Two sub-layers exist in all the samples - an upper homogeneous Hf-doped Ta₂O₅ sub-layer and a near interfacial region which is a mixture of Ta- and Si-oxides. The X-ray reflectivity (XRR) analysis shows existence of interfacial layer with a thickness of about 1.9-2 nm, irrespectively of the total thickness of the stacks. Metal-oxide-Si structures with Ru and RuO₂ metal electrodes have been prepared and investigated in terms of dielectric constant, effective work function (EWF) and interfacial layer parameters. The influence of post-metallization annealing steps on these parameters was also studied.     

Thermal stability and chemical bonding states of AlOxNy/Si gate stacks revealed by synchrotron radiation photoemission spectroscopy

Annealing-temperature dependence of the thermal stability and chemical bonding states of AlO_xN_y/SiO₂/Si gate stacks grown by metalorganic chemical vapor deposition (MOCVD) using new chemistry was investigated by synchrotron radiation photoemission spectroscopy (SRPES). Results have confirmed the formation of the AlN and AlNO compounds in the as-deposited samples. Annealing the AlO_xN_y samples in N₂ ambient in 600-800 °C promotes the formation of SiO₂ component. Meanwhile, there is no formation of Al-O-Si and Al-Si binding states, suggesting no interdiffusion of Al with the Si substrate. A thermally induced reaction between Si and AlO_xN_y to form volatile SiO and Al₂O is suggested to be responsible for the full disappearance of the Al component that accompanies annealing at annealing temperature of 1000 °C. The released N due to the breakage of the Al-N bonding will react with the SiO₂ interfacial layer and lead to the formation of the Si₃-N-O/Si₂-N-O components at the top of Si substrate. These results indicate high temperature processing induced evolution of the interfacial chemistry and application range of AlO_xN_y/Si gate stacks in future CMOS devices.     

Interface control of high-k gate dielectrics on Ge

Important progress has been made in the passivation of Ge/gate dielectric interfaces. One important approach is by thermally oxidized GeO₂ interface and ALD high-k layers, with an interface state density D_it ∼ 2 × 10¹¹ cm⁻² eV⁻¹. Another approach is with an epi-Si/SiO₂ interface, resulting in similar D_it. Hysteresis and V_th shift, however, are still not optimal. Extensive material characterization and theoretical insights help us understanding the root cause of these remaining issues and show the way to improved interface control.     

Theoretical analysis of fluorine-passivated germanium surface for high-k/Ge gate stack by molecular orbital method

Energy state and coordination of fluorine (F)-passivated Ge surface have been theoretically analyzed by semi-empirical molecular orbital method in comparison with hydrogen-passivated Ge surface to predict usefulness of F for passivation element and surface stabilization. Heat of formation for the reaction of F atoms and Ge layer system decreased simultaneously without energy barrier. Resultantly, F-Ge bonds were formed on Ge layer system and Ge surface dangling bonds were passivated by F dissimilar to the reaction of H atoms and Ge layer system. Furthermore, it was confirmed experimentally that the electrical properties of HfO₂/Ge gate stack were improved by F₂-ambient treatment of Ge substrate prior to HfO₂ deposition. It is concluded that F-passivation of Ge surface is useful in making stable and low-defective Ge substrate for high-k dielectric layer deposition.     

Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition

The electrical as well as the structural properties of La₂O₃ thin films on TiN substrates were investigated. Amorphous stoichiometric La₂O₃ thin films were grown at 300 °C via atomic layer deposition technique by using lanthanum 2,2,6,6-tetramethyl-3,5-heptanedione [La(TMHD)₃] and H₂O as precursors. Post-annealing of the grown film induced dramatic changes in structural and the electrical properties. Crystalline phases of the La₂O₃ film emerged with the increase of the post-annealing temperature. Metal-insulator-metal (MIM) capacitor was fabricated to measure the electrical properties of the grown film. The dielectric constant of the La₂O₃ thin films increased with annealing temperature to reach the value of 17.3 at 500 °C. The leakage current density of the film post-annealed at 400 °C was estimated to be 2.78 × 10⁻¹⁰ and 2.1 × 10⁻⁸ A/cm² at ±1 V, respectively.     

Application of spectroscopic photoemission and low energy electron microscope to high-k gate dielectrics: Relationship between surface morphology and electronic states during Hf-silicide formation

We have applied the spectroscopic photoemission and low energy electron microscope to study high-k gate dielectrics and have performed the following in situ operations during ultrahigh vacuum annealing: real-time observation of surface morphology and microregion photoelectron spectroscopy measurements. Changes in surface morphology and electronic states were consistent with the models previously reported in the case of HfO₂/Si. No clear differences between void regions and nonvoid regions have been observed in microregion photoelectron spectra for poly-Si/HfO₂/Si, regardless of phase separation in real space. These results have suggested that the initial void formation occurs in about 100-nm wide regions for both HfO₂/Si and poly-Si/HfO₂/Si.     

Theoretical study of the influence of confinement and channel blocking on adsorption and diffusion of n-butane in silicalite-1

Dynamic Monte Carlo simulations for the open coarse-grained model of MFI type zeolite were used to study the dynamics of adsorption and diffusion of n-butane in silicalite-1. We demonstrated the influence of the confinement of the structure of zeolite channels on both the dynamics of the adsorption process and the maximum loading of adsorbate. We showed that the confinement and channel blocking limit the adsorption and desorption processes. Moreover, they cause the maximum loading in the zeolite structure for moderate pressures to be higher than the one predicted by the Langmuir model for a flat and homogeneous system.     

Effect of N content on phase configuration, nanostructure and mechanical behaviors in Ti-Cx-Ny thin films

Ti-C_x-N_y thin films with different nitrogen contents were deposited by way of incorporation of different amounts of nitrogen into TiC_1.02 using unbalanced reactive unbalanced dc magnetron sputtering method. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and microindentation methods were used to investigate their phase configurations, nanostructures and mechanical behaviors in order to investigate their dependences on nitrogen content. The result indicated that the nitrogen content had a significant effect on phase configuration, nanostructure and mechanical behaviors of Ti-C_x-N_y thin films. The nitrogen-free TiC_1.02 films exhibited a polycrystallite with nano-grains. On one hand, incorporated nitrogen substituted C in TiC_1.02, producing Ti(C,N), and subsequently linked to the substituted C, forming C-N. On the other hand, the substituted C lined to each other, forming C-C. As a result, nanocomposite thin films consisting of nanocrystalline Ti(C,N) and amorphous (C, C-N) were produced. With further incorporation of nitrogen more C was substituted, accompanying with formation of more amorphous matrices and decrease of size of nanocrystalline Ti(C,N). The trend was enhanced with further increase of nitrogen content. A microhardness maximum of ∼58 GPa was obtained in nitrogen-free TiC_1.02 thin films. This value was linearly decreased with incorporation of N or increase of N content, and finally a hardness value of about 28 GPa was followed at a N content of ∼25 at.%. Both elastic modulus and residual compressive stress values exhibited similar trends.     

Mössbauer study of 1/8 anomaly in La2−x Ba x CuO4

The measurements of Mössbauer effect, magnetic susceptibility and muon spin relaxation have been carried out for the high-T _c superconductor La_2?x Ba _x CuO₄. The intensity of Mössbauer doublet spectrum of the sample of x～1/8 begins to decrease rapidly at a certain temperature T _m, which we define as a magnetic transition temperature T _Möss. This temperature almost agrees with T _μSR determined from muon spin relaxation. The quadrupole doublet disappears at low temperature below T _m but a clearly splitted spectrum is not observed even at 4.2 K, which indicates a peculiar magnetic state with a wide distribution of internal magnetic field. Around x～1/8, the superconducting critical temperature T _c and T _m are competed each other. In conclusion, superconductivity disappears around 1/8 hole concentration and a peculiar magnetic state such as spin density wave appears.     

Diffusion-weighted imaging in the prostate: an apparent diffusion coefficient comparison of half-Fourier acquisition single-shot turbo spin-echo and echo planar imaging

Prostate cancer detection using diffusion-weighted imaging is highly affected by the accuracy of the apparent diffusion coefficient (ADC) values in an image. Echo planar imaging (EPI) is a fast sequence commonly used for diffusion imaging but has inherent magnetic susceptibility and chemical shift artefacts associated. A diffusion sequence that is less affected by these artefacts is therefore advantageous. The half-Fourier acquisition single-shot turbo spin-echo (HASTE) sequence was chosen. The diffusion sequences were compared in image quality, repeatability of the ADC value and the effect on the ADC value with varied b values. Eight volunteers underwent three scans of each sequence, on a 1.5-T Siemens system, using b values of 0, 150, 300, 450, 600, 750, 900 and 1000 s/mm(2). ADC maps were created to address the reproducibility of the ADC value when using two b values compared to eight b values. The ADC value using all b values with the HASTE sequence gave the best performance in all tested categories. Both sequences gave significantly different ADC mean values for two b values compared to when using eight b values (P<.05) suggesting larger error is present when using two b values. HASTE was shown to be an improvement over EPI in terms of repeatability, signal variation within a region of interest and standard deviation over the volunteer set. The improved accuracy of the ADC value in the HASTE sequence makes it potentially a more sensitive tumor detection technique.     

DFT study on electronic structure and optical properties of N-doped,S-doped,and N/S co-doped SrTiO3

The electronic structures and optical properties of N-doped, S-doped and N/S co-doped SrTiO₃ have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, the top of the valence band is made up of the O 2p states for the pure SrTiO₃. When N and S atoms were introduced into SrTiO₃ lattice at O site, the electronic structure analysis shows that the doping of N and S atoms could substantially lower the band gap of SrTiO₃ by the presence of an impurity state of N 2p on the upper edge of the valence band and S 2p states hybrid with O 2p states, respectively. When the N/S co-doped, the energy gap has further narrowing compared with only N or S doped SrTiO₃. The calculations of optical properties also indicate a high photo response for visible light for N/S co-doped SrTiO₃. Besides, we find a new impurity state which separates from the O 2p states could improve the photocatalytic efficiency and we also propose a model for light electron-hole transportation which can explain the experiment results well. All these conclusions are in agreement with the recent experimental results.     

P-n codoping induced enhancement of ferromagnetism in Mn-doped In2O3: A first-principles study

We have performed first-principles density functional theory calculation in order to investigate the feasibility of “p-n codoping method” in improving magnetic property of In₂O₃ based diluted magnetic semiconductors. We find that the ferromagnetic state is favored in Mn-doped In₂O₃, and Sn doping can increase magnetic moment in Mn-doped In₂O₃. These findings are in line with our earlier experimental observation. Along with previous works, we now have enough evidences to support that p-n codoping is a valid method to improve magnetism of oxides based diluted magnetic semiconductors.     

Solution Structures of Pyrophthalones,III: Complementary Application of 14N/16N-NMR Spectroscopy to Study Solution Structures of Pyrophthalones

The solution structures of nine pyrophthalone-type substances are determined by ¹⁴N / ¹⁵N-NMR-spectroscopy. Mostly depending on the conditions (solvent, solubility, chemical nature of the compound), both isotopes can be used complementary to obtain reliable data. Additionally, for some compounds ¹⁵N solid state NMR data are available and demonstrate the structural identity in solution and the solid state.     

Ground state rotational spectrum of nitrogen trifluoride: The K = 3 splittings of NF3 and NF3

The ground state rotational spectrum of the ¹⁴NF₃ and ¹⁵NF₃ isotopic species of nitrogen fluoride has been observed in the ∼450-810 GHz frequency range. This investigation allowed us to improve the rotational parameters for both isotopologues. In particular, for the first time the K = 3 line splitting parameter and the sextic centrifugal distortion constants have been determined for ¹⁵NF₃.     

The First in Vivo Observation of C–N Coupling in Mammalian Brain

[5-¹³C,¹⁵N]Glutamine, with ¹J(¹³C–¹⁵N) of 16 Hz, was observed in vivo in the brain of spontaneously breathing rats by ¹³C MRS at 4.7 T. The brain [5-¹³C]glutamine peak consisted of the doublet from [5-¹³C,¹⁵N]glutamine and the center [5-¹³C,¹⁴N]glutamine peak, resulting in an apparent triplet with a separation of 8 Hz. The time course of formation of brain [5-¹³C,¹⁵N]glutamine was monitored in vivo with a time resolution of 20–35 min. This [5-¹³C,¹⁵N]glutamine was formed by glial uptake of released neurotransmitter [5-¹³C]glutamate and its reaction with ¹⁵NH₃ catalyzed by the glia-specific glutamine synthetase. The neurotransmitter glutamate C5 was selectively¹³C-enriched by intravenous [2,5-¹³C]glucose infusion to ¹³C-label whole-brain glutamate C5, followed by [¹²C]glucose infusion to chase ¹³C from the small and rapidly turning-over glial glutamate pool, leaving ¹³C mainly in the neurotransmitter [5-¹³C]glutamate pool, which is sequestered in vesicles until release. Hence, the observed [5-¹³C,¹⁵N]glutamine arises from a coupling between ¹³C of neuronal origin and ¹⁵N of glial origin. Measurement of the rate of brain [5-¹³C,¹⁵N]glutamine formation provides a novel noninvasive method of studying the kinetics of neurotransmitter uptake into glia in vivo, a process that is crucial for protecting the brain from glutamate excitotoxicity.     

Thickness study of Al:ZnO film for application as a window layer in Cu(In1−xGax)Se2 thin film solar cell

Structural, electrical and optical properties of Al doped ZnO (Al:ZnO) thin film of various thicknesses, grown by radio-frequency magnetron sputtering system were studied in relation to the application as a window layer in Cu(In_1−xGa_x)Se₂ (CIGS) thin film solar cell. It was found that the electrical and structural properties of Al:ZnO film improved with increasing its thickness, however, the optical properties degraded. The short circuit current density, J_sc of the fabricated CIGS based solar cells was significantly influenced by the variation of the Al:ZnO window layer thickness. Best efficiency was obtained when CIGS solar cell was fabricated with electrically and optically optimized Al:ZnO window layer.     

Equilibrium structure in the presence of internal rotation: A case study of cis-methyl formate

The Born-Oppenheimer (BO) equilibrium molecular structure () of cis-methyl formate has been determined at the CCSD(T) level of electronic structure theory using Gaussian basis sets of at least quadruple-ζ quality and a core correlation correction. The quadratic, cubic and semi-diagonal quartic force field in normal coordinates has also been computed at the MP2 level employing a basis set of triple-ζ quality. A semi-experimental equilibrium structure () has been derived from experimental ground-state rotational constants and the lowest-order rovibrational interaction parameters calculated from the ab initio cubic force field. To determine structures, it is important to start from accurate ground-state rotational constants. Different spectroscopic methods, applicable in the presence of internal rotation and used in the literature to obtain “unperturbed” rotational constants from the analysis and fitting of the spectrum, are reviewed and compared. They are shown to be compatible though their precision may be different. The and structures are in good agreement showing that, in the particular case of cis-methyl formate, the methyl torsion can still be treated as a small-amplitude vibration. The best equilibrium structure obtained for cis-methyl formate is: r(C_m-O) = 1.434 Å, r(O-C_c) = 1.335 Å, r(C_m-H_s) = 1.083 Å, r(C_m-H_a) = 1.087 Å, r(C_c-H) = 1.093 Å, r(CO) = 1.201 Å, ∠(COC) = 114.4°, ∠(CCH_s) = 105.6°, ∠(CCH_a) = 110.2°, ∠(OCH) = 109.6°, ∠(OCO) = 125.5°, and τ(H_aCOC) = 60.3°. The accuracy is believed to be about 0.001 Å for the bond lengths and 0.1° for the angles.     

Luminescent properties of KGd1−x(WO4)2:Eux and KGd1−x(WO4)2−y(MoO4)y:Eux phosphors in UV-VUV regions

KGd_1−x(WO₄)_2−y(MoO₄)_y:Eu³⁺_x(0.1?x?0.75, y=0 and 0.2) phosphors are synthesized through traditional solid-state reaction and their luminescent properties in ultraviolet (UV) and vacuum ultraviolet (VUV) regions are investigated. Under 147 nm excitation, these phosphors show characteristic red emission with good color purity. In order to improve their emission intensity, the MoO₄²⁻ (20 wt%) is introduced into the anion of KGd_1−x(WO₄):Eu³⁺_x. The Mo⁶⁺ and Eu³⁺ co-doped KGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped KGd(WO₄)₂ in VUV region. The chromaticity coordination of KGd_0.45(WO₄):Eu³⁺_0.55 is (x=0.669, y=0.331), while that of KGd_0.45(WO₄)_1.8(MoO₄)_0.2:Eu³⁺_0.55 is (x=0.666, y=0.334) in VUV region.     

Experimental study on T2 relaxation time of protons in water suspensions of iron-oxide nanoparticles: Cases of composite nanospheres

The experimental transverse relaxivity r_2,exp of protons in water suspensions of spherical SiO₂ shelled γ‐Fe₂O₃ nanoparticle clusters of different sizes is analyzed based on existing models. It is shown that r_2,exp can be significantly larger than the modelling relaxivity, which may be attributed to nanosphere aggregations.