Buffer layer influence on guiding properties of oxidized porous silicon waveguides

We studied the influence of the thickness and porosity of the buffer layer on the guiding properties of oxidized porous silicon waveguides (OPSWG). It is demonstrated how a modified anodization process acts on the porosity of the final oxidized porous silicon. In this way, it is possible to control the refractive index jump between the core of OPSWG made of compact silicon dioxide and the bottom buffer layer made of porous silicon dioxide. The adoption of a double-step anodization process decreases the propagation losses to 0.5 dB/cm against the 8 dB/cm measured for the waveguide realized using a single-step anodization. The main reason seems not to be the increase of the difference of refractive index values but the more homogeneous buffer layer obtained along the core of the waveguide. This homogeneous layer permits a better lateral confinement of the light as demonstrated by spatial refractive index profile measurement.     

Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper

Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot (QD) lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of selforganized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength (> 1.3 μm) QD lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.     

SOIM新结构的制备及其性能的研究

制备在以SiO2为绝缘埋层的SOI材料上的电子器件存在着自加热问题.为减少自加热效应和满足一些特殊器件/电路的要求，利用多孔硅外延转移技术制备出以二氧化硅和氮化硅为多绝缘埋层的SOI新结构.高分辨率透射电镜和扩展电阻测试结果表明得到的SOIM新结构具有很好的结构和电学性能，退火后的氮化硅埋层为非晶结构.     

Optical properties of erbium-doped porous silicon waveguides

Planar and buried channel porous silicon waveguides (WG) were prepared from p⁺-type silicon substrate by a two-step anodization process. Erbium ions were incorporated into pores of the porous silicon layers by an electrochemical method using ErCl₃-saturated solution. Erbium concentration of around 10²⁰ at/cm³ was determined by energy-dispersive X-ray analysis performed on SEM cross-section. The luminescence properties of erbium ions in the IR range were determined and a luminescence time decay of 420 μs was measured. Optical losses were studied on these WG. The increased losses after doping were discussed.     

Enhancement of the evanescent field using polymer waveguides fabricated by deep UV exposure on mesoporous silicon

Polymer integrated reverse symmetry waveguides on porous silicon substrate fabricated by using deep ultraviolet radiation in poly(methyl methacrylate) are presented. The layer sequence and geometry of the waveguide enable an evanescent field extending more than 3 microm into the upper waveguide or analyte layer, enabling various integrated optical devices where large evanescent fields are required. The presented fabrication technique enables the generation of defined regions where the evanescent field is larger than in the rest of the waveguide. This technology can improve the performance of evanescent-wave-based waveguide devices.     

Light-emitting nanocrystalline silicon by low-pressure chemical-vapor deposition of disilane

Summary Porous silicon is an attractive material for silicon optoelectronics. The great advantage of porous silicon lies on the simple way of production which makes silicon nanostructures easily available. After several papers have been published on this topic, we are able to identify some disadvantages connected to the porous nature of the material and to the method of fabrication. Other dry processes can be used to produce Si nanostructures. In this paper we present a method fully compatible with the standard semiconductor technology. The optical and structural properties of the nanocrystalline films so far obtained are presented, together with some promising results indicating good electrical properties. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettitore di Luce) Torino, 12–13 October 1995.     

Femtosecond laser fabrication of tubular waveguides in poly(methyl methacrylate)

Femtosecond laser direct writing is employed for the fabrication of buried tubular waveguides in bulk poly(methyl methacrylate). A novel technique using selective chemical etching is presented to resolve the two-dimensional refractive-index profile of the fabrication structures. End-to-end coupling in the waveguides reveals a near-field intensity distribution that results from the superimposition of several propagating modes with different azimuthal symmetries. Mode analysis of the tubular waveguides is performed using the finite-difference method, and the possible propagating mode profiles are compared with the experimental data.     

Simple low-loss waveguide bends using ARROW effect

A new concept for reducing bend loss in dielectric planar waveguides is presented. It is based on the introduction of a set of antiresonant reflecting optical waveguides (ARROWs) on the outside of the bent core and defined in the same fabrication step as the main bend. It has been ascertained by simulation that the bending loss can be significantly reduced. The method is compatible with other bend-lossreduction strategies, as well as with different waveguiding structures, such as rib and buried waveguides and fibers.This revised version was published online in August 2005 with a corrected cover date.     

PDL free plasma enhanced chemical vapor deposition SiC optical waveguides and devices

Planar silicon carbide (SiC) waveguides are proposed for fabrication on a silicon substrate with an oxide isolation layer. Using post deposition annealing it is possible to achieve low polarisation-dependent loss (PDL) within optical SiC waveguides fabricated using a low temperature deposition technique. The proposed waveguides are optically characterised and successfully used in power splitters and vibration sensors. Results before and after annealing cycles for those devices are discussed. The interesting optical characteristics of SiC waveguides as well as the first passive components presented open the way for photonic sensing in harsh environment where SiC is a very promising material.     

直拉硅单晶原生漩涡缺陷的研究

本文用化学腐蚀方法, 从含有漩涡缺陷的原生CZ硅单晶中分离出尺寸在1000--6000埃间的氧沉淀, 制成萃取复型样品,用T E M 对氧沉淀作微区电子衍射分析. 同时, 观察硅薄膜中漩涡缺陷的TEM 象, 确定了二者的对应关系. 结果表明, 构成漩涡缺陷的氧沉淀主要是呈方形片的热液石英(keatite, siliea k) 及少量呈六角片的。方英石(a-cristobalite ), 沉淀片周边沿<1 1 0> 方向, 惯习面前者的为{ 100} , 后者的为{ 1 1 1}. 样品的红外吸收光谱表明, 方片状热液石英沉淀可能与1 2 2 4 (1/cm ), 吸收峰相对应. 关键词：     

Heterojunction solar cells produced by porous silicon layer transfer technology

In this paper, we present the result of heterojunction solar cells based on porous silicon layer transfer technology. a-Si/c-Si structured solar cells were prepared in which the c-Si was deposited on annealed double-layer porous silicon by low-pressure chemical vapor deposition. The structural properties and the evolvement of the double-layer porous silicon before and after thermal annealing were investigated by scanning electron microscopy. X-ray diffraction, Raman spectroscopy and a microwave photoconductive decay method were used to investigate the properties of the epitaxial silicon thin films deposited at different pressures. And, the influence of the deposition pressure on the properties of the c-silicon thin films was investigated. The spectral responses of the cells were studied by a quantum efficiency test. The results show that the epitaxial silicon thin film deposited at 100 Pa has better carrier lifetime and better spectral response. Furthermore, the Raman peak intensity of the silicon film prepared at 100 Pa is much closer to that of a monocrystalline silicon wafer. A simple solar cell structure without any light-trapping features showed an efficiency of up to 10.1 %.     

Ballistic-electron-emission spectroscopy

Ballistic electron-emission spectroscopy (BEES) and microscopy (BEEM) have been carried out on epitaxial metal/semiconductor interfaces and on epitaxial nanostructures in UHV and at low temperatures. We describe how the band structure of the metal may lead to pronounced focusing of the hot carrier beam injected by the scanning tunneling microscope (STM) tip, thereby greatly enhancing the spatial resolution, such that spectroscopy at buried point defects becomes possible. The strain fields of Ge quantum dots buried underneath an epitaxial silicide film on a Si(100) substrate are found to induce a characteristic clustering of linear defects at the metal/semiconductor interface. The Schottky barrier height lowering associated with these defects allows for an easy identification of buried dots, despite the many mechanisms leading to contrast in BEEM images.     

White-light emission from porous-silicon-aluminum Schottky junctions

Summary Porous-silicon-based white-light-emitting devices are presented. The fabrication process on different substrates is described. The peculiarities of technological steps for device fabrication (porous-silicon formation and aluminum treatment) are underlined. Doping profile of the porous layer, current-voltage characteristics, time response, lifetime tests and electroluminescence emission spectrum of the device are presented. A model for electrical behaviour of Al/porous silicon Schottky junction is presented. Electroluminescence spectrum of the presented devices showed strong similarities with white emission from crystalline silicon junctions in the breakdown region. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettitore di Luce), Torino, 12–13 October 1995.     

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm⁻¹ under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.     

Optical waveguides in porous silicon pre-patterned by localised nitrogen implantation.

FIPOS technology forms islands of silicon isolated from a silicon substrate by (oxidised) porous silicon. The larger refractive index of the silicon islands suggests their use as optical waveguides. Sets of these silicon islands have been fabricated and the anticipated waveguiding has been observed at wavelengths of 1.15 and 1.3 μm in the silicon islands. However, the dominant waveguiding in these FIPOS structures is observed in the porous silicon between the silicon islands, close to the sample surface. A simple dynamic model of the anodisation process has been developed to explain the origin of this unexpected waveguiding.     

Optical characterization of the recombination process in silicon wafers, epilayers and devices

In this paper we present various approaches to the measurement of recombinative parameters in silicon wafers, epitaxial layers and solar cells. In particular our techniques are able to measure the bulk lifetime and the surface recombination velocity at low injection levels. We also show that the techniques presented are a reliable tool to monitor the fabrication process of a standard crystalline silicon solar cell. In all the methodologies presented there are no stringent requirements concerning the state of wafer surface.     

Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching

A novel electroless method of producing porous silicon carbide (PSiC) is presented. Unlike anodic methods of producing PSiC, the electroless process does not require electrical contact during etching. Rather, platinum metal deposited on the wafer before etching serves as a catalyst for the reduction of a chemical oxidant, which combined with UV illumination injects holes into the valence band, the holes subsequently participating in the oxidation and dissolution of the substrate. The etchant is composed of HF and K₂S₂O₈ in water. Various porous morphologies are presented as a function of etchant concentration, time of etching, and SiC polytype. Wafer quality is of the utmost concern when utilizing the electroless wet etchant, since defects such as stacking faults, dislocations, and micropipes have a large impact on the resulting porous structure. Results of imaging and spectroscopic characterization indicate that the porous morphologies produced in this manner should be useful in producing sensors and porous substrates for overgrowth of low dislocation density epitaxial material.     

直拉硅单晶原生漩涡缺陷的研究

本文用化学腐蚀方法,从含有漩涡缺陷的原生CZ硅单晶中分离出尺寸在1000—6000?间的氧沉淀,制成萃取复型样品,用TEM对氧沉淀作微区电子衍射分析。同时,观察硅薄膜中漩涡缺陷的TEM象,确定了二者的对应关系。结果表明,构成漩涡缺陷的氧沉淀主要是呈方形片的热液石英(keatite,silicak)及少量呈六角片的α方英石(α-cristobalite),沉淀片周边沿<110>方向,惯习面前者的为{100},后者的为{111}。样品的红外吸收光谱表明,方片状热液石英沉淀可能与1224cm^-1吸收峰相对应。 关键词：     

Fabrication Tolerance Analysis of Bent Single-Mode Rib Waveguides on SOI

The influence of fabrication tolerances on the minimum bending radius of both rectangular and trapezoidal single-mode rib waveguides on silicon on insulator (SOI) is analyzed. In order to reduce the number of simulations, we present a semi-analytical procedure which yields an estimation of the bending radius, and facilitates the interpolation of the obtained data. We conclude that the tolerances of today’s fabrication processes hinders the miniaturization of integrated circuits if single-mode behavior is required. Besides, the sidewall angle tapering in 90° turns of wet etched waveguides is analyzed in a worst case approach.     

Directional coupler wavelength selective filter based on dispersive Bragg reflection waveguide

A new type of wavelength selective filter, based on high differential dispersion between two coupled waveguides, is presented. The Bragg Reflection Waveguide displays high effective refractive index dispersion, due to the interaction of the guided mode with the two confining Bragg reflectors. When coupled with a weakly guided buried channel silica waveguide, a very narrow bandwidth filter (<1 nm) can be easily produced, in a shorter length, with respect to directional couplers made with standard step index channel waveguides. The complete design methodology, fabrication and characterization are presented.