Low-temperature thermal conductivity of tellurium-doped bismuth

Phonon thermal conductivities κ₂₂ (?T ‖ C1) and κ₃₃ (? T ‖ C₃) of tellurium-doped bismuth with an electron concentration in the range 1.8 × 10¹⁹ ≤ n_L ≤ 1.4 × 10²⁰ cm^?3 were studied in the temperature interval 2 < T < 300 K. The temperature dependence of the phonon thermal conductivity obtained on doped bismuth samples of both orientations exhibits two maxima, one at a low temperature and the other at a high temperature. The effect of various phonon relaxation mechanisms on the dependence of both phonon thermal conductivity maxima on temperature, impurity concentration, and electron density is studied.     

Diffusion of selenium and tellurium in silicon

Diffusion of selenium and tellurium in silicon has been investigated in the temperature range 1000°C to 1310°C by sheet conductivity. For SiSeD ₀= 0.3±0.1 cm²/s andh=2.6±0.1 eV, and for SiTeD ₀=0.9±0.3 cm²/s and h=3.3±0.1eV have been obtained. The surface concentrations for both dopants were of the order of 5 × 10¹³ to 6×10¹⁶cm^–3. The Hall coefficient leads to an energy level of 300±15meV for selenium and 200±20meV for tellurium.     

ESR and conductivity studies of doped polyacetylene

Low temperature ESR spectra of cis-rich and trans-rich polyacetylene, lightly doped with pentafluorides (AsF₅, SbF₅) exhibit two clearly distinguishable ESR lines. Detailed studies of these two lines as a function of temperature, doping concentration and microwave power indicate that one of these lines originates from localized spins, the other from conduction electrons. The concentration of the localized spins, generally speaking, decreases with doping. The Pauli-like susceptibility associated with the conduction electrons changes from 1.5×10^–7 to 15×10^–7 emu·cm³/mole for various doping levels and correlates with the conductivity of the same samples. The longitudinal relaxation time of the localized spins in doped trans-rich was found to beT ₁100 s at low temperatures, consistent with values of others in undoped trans rich. The temperature dependence of the homogeneous transverse relaxationT ₂ of the localized spins in doped trans-rich polyacetylene is similar to that of undoped trans polyacetylene. These facts show that the localized spins originate from undoped regions of the doped polyacetylene, perhaps due to inhomogenous doping. Our results are consistent with either formation of metallic islands, or, probably more, with impurity band conduction in strongly disordered semiconductors.     

Photovoltaic activity in a ZnSe/PEO–chitosan blend electrolyte junction

Thin films of ZnSe and PEO–chitosan blend polymer doped with NH₄I and iodine crystals were prepared to form the two sides of a semiconductor electrolyte junction. ZnSe was electrodeposited on indium tin oxide (ITO) conducting glass. The polymer is a blend of 50 wt% chitosan and 50 wt% polyethylene oxide. The polymer blend was complexed with ammonium iodide (NH₄I), and some iodine crystals were added to the polymer–NH₄I solution to provide the I⁻/I³⁻redox couple. The room temperature ionic conductivity of the polymer electrolyte is 4.32 × 10⁻⁶ S/cm. The polymer film was sandwiched between the ZnSe semiconductor and an ITO glass to form a ZnSe/polymer electrolyte/ITO photovoltaic cell. The open circuit voltage (V _oc) of the fabricated cells ranges between 200 to 400 mV and the short circuit current between 7 to 10 μA.     

Thermoelectric properties of Mn doped FeSix alloys hot-pressed from nitrided rapidly solidified powders

Manganese doped FeSi_x alloys (x=1.9, 2.0, 2.1, 2.3 and 2.5) with fine grain sizes of about a few micrometers and densifications over 99% have been prepared by vacuum hot-pressing at 975 °C/30 min and annealing at 800 °C/20 h from rapidly solidified powders. In addition to -FeSi₂, a silicon phase was found in the samples in the form of rods of 200 nm in diameter as x>2 and also polyhedrons of several microns in size as x=2.5. Transport property measurements revealed that excess silicon decreases the Seebeck coefficient and the electric conductivity, but increases the thermal conductivity of the -FeSi₂ based alloys, due to the high thermal but low electric conductivity of the silicon particles. A high figure of merit of 2.0×10^-4 K^-1 was obtained for the sample with x=2 at 600 °C. Low thermal conductivity of about 4 W(mK)^-1 between 400 °C and 800 °C for the samples without excess silicon suggests that some dispersed fine nitrides form during the preparation of the samples, which enhance the phonon scattering and reduce the thermal conductivity of the materials. PACS 72.15.Jf; 81.05.Hd; 81.30.Mh     

Influence of annealing on the conductivity and photoconductivity of p-type CdTe

On annealing p-type CdTe, considerable change in conductivity takes place. Samples of high resistivity were used for the measurements. Each of a set of samples was annealed at different temperature. After annealing, the temperature dependence of the conductivity and the relaxation curves of the photoconductivity were measured. Analysis of the first set of curves yielded value of energyE _a corresponding to the level occurring in given samples. It was established that this acceptor level is due to V^cd, or V^cd complexes, and is situated at 0.3 eV above the valence band edge. Concentration of these levels is increased by annealing. Furthermore, an energy value ofH=0.79 eV was found, corresponding very probably to the formation energy of a vacancy V^cd.Analysis of the relaxation curves yielded the temperature dependence of _S , _T and the energy distanceE _M of the impurity level that is responsible for photoconductivity. A value of (E _g -E _M )=0.09–0.12 eV was found for all samples studied. This level therefore lies below the conduction band edge and its concentration amounts to 10¹⁴–10¹⁵ cm^–3. The level is probably due to foreign impurities.Two sets of samples were used: both as-grown and Sb-doped. The results for both sets were not much different from each other.Ke Karlovu 3, Praha 2, Czechoslovakia.     

Electron-phonon interaction inP-doped silicon at low temperatures

In this present work, we explain the thermal conductivity results ofP doped silicon for impurity concentration 4.7×10¹⁷ and 1.0×10¹⁸ cm^–3 by applying the theory of scattering of phonons by electrons in the mixed state i.e. both in the localised state and in the metallic state. Using Mikoshiba's inhomogeneity model we calculated the number of electrons in the bound region and in the conduction band region and using the relaxation rates of both bound electron-phonon scattering and Ziman-Kosarev theory of free electron-phonon scattering, we explain the thermal conductivity values from 2 to 40 K. The values of density-of-states effective mass and dilatation deformation potential are found to be in agreement with the experimental values for silicon, for the electron concentration in the conduction band. We have also taken into account the effect of impurity scattering due to doped impurities, along with isotope scattering.     

Thermal stability and diffusion processes in Mo x Si y /Si multilayers studied with high-resolution RBS

Mo _x Si _y /Si multilayers with a period thickness of ∼7.5 nm and bilayers Mo _x Si _y /Si have been fabricated by e⁻-beam evaporation in UHV at a deposition temperature of 150°C [1]. The composition of the as-deposited layer systems and changes in the composition after baking the samples have been studied with high-resolution RBS. For a multilayer with a mixing ratioy/x≃2, no interdiffusion is observed up to a baking temperature of 830°C. For samples with a mixing ratioy/x≃1, diffusion is observed up to a baking temperature of 630°C, resulting in a mixing ratio close toy/x≃2. This mixing ratio remains almost stable up to ∼830°C, and considerable interdiffusion is only observed in those systems where regions with a mixing ratio smaller than 2 still exist. Possible reasons for the high thermal stability of the samples are the lack of a concentration gradient for Si in the system and/or the crystallization of MoSi₂.     

Nonlinear heat transport near the λ transition in4He

The effect of a finite stationary heat current is investigated in the spatially inhomogenous situation where the heat current induces an interface between normal-liquid and superfluid⁴He. The nonlinear temperature profile in the vicinity of the interface and the local thermal conductivity are calculated forT>T within modelF up to oneloop order. The field-theoretic renormalization-group approach is employed to describe the critical behavior both in the linear and nonlinear response regime. The finite heat currentQ causes a finite temperature gradient atT and therefore suppresses the critical divergence of the thermal conductivity. Quantitative predictions are made on the nonlinearQ dependence of the temperature profile and of the thermal conductivity which should be experimentally observable.     

Composition dependence of effective thermal conductivity and effective thermal diffusivity of Se100−xInx (x=0, 5, 10, 15 and 20) chalcogenide glasses

Simultaneous measurement of effective thermal conductivity (λ_e) and effective thermal diffusivity (χ_e) of twin pallets of Se_100−xIn_x (x=0,5, 10, 15, and 20) glasses, prepared under a load of 5 tons, have been made at room temperature using the Transient Plane Source (TPS) technique. The values of λ_e and χ_e were found to increase initially with the increase of concentration of In in Se-In alloy and had their maximum at 10 at.wt% of indium. For indium concentration beyond 10 at.wt% of the values of effective thermal conductivity and effective thermal diffusivity decrease linearly. This is suggestive of fact that 10 at.wt% of indium can be considered as a critical composition at which the alloy becomes, chemically ordered and maximum thermally stable than other composition. Further addition of indium in selenium decreases the values of λ_e and χ_e. The behaviour is explained on the basis of decrease of localized states and increase in disorderness for higher composition indium.     

Normal-state and superconducting properties of HfV2

We present experimental results for the low-temperature specific heat, electrical resistivity, elastic constants, ultrasonic attenuation and thermal conductivity of theC 15 Laves phase HfV₂ for both polycrystalline and single crystal samples. BelowT _c =9 K, the temperature dependence of the specific heat can roughly be approximated by aT ³ law over a large temperature range. This may be explained with strong coupling effects in consistence with the high value for C/T _c =1.9. Heat transport appears dominated by the known phonon contribution also belowT _c . There is no electronic contribution to the ultrasonic attenuation in HfV₂.Dedicated to B. Mühlschlegel on the occasion of his 60th birthday     

A model of evaluating the pseudogap temperature for high-temperature superconductors

We have presented a model of evaluating the pseudogap temperature for high-temperature superconductors using paraconductivity approach. The theoretical analysis is based on the crossing point technique of the conductivity expressions. The pseudogap temperature T^? is found to depend on dimension and is calculated for 2D and 3D superconducting samples. Numerical calculation is given in favour of the YBCO and doped SmFeAsO_1?x samples.     

Frequency dependent conductivity in As2Se3 and As2Se3 + 15% Sb

Dc and ac measurements were performed on bulk samples of undoped and 15% Sb doped As₂Se₃ as a function of temperature (90–400 K) and frequency (10³–10⁶ Hz). The dc results show an activated conductivity dependence on temperature with an activation energy of 0.8 eV above room temperature. The ac results give a temperature dependent frequency exponent s. The temperature dependence of G _ac is discussed in terms of the mechanisms involved. Results are compared with the predictions of the Quantum Mechanical Tunnelling and Correlated Barrier Hopping models. It is found that doping increases the dc conductivity but has no effect on the ac conductivity.     

The role of Pb ions doping in the mechanism of chromate adsorption by goethite

Pure and 0.384% Pb²⁺ ions doped goethite samples were prepared in the laboratory by the coprecipitation method. The laboratory-prepared goethite samples were characterized for pH of point of zero charge (pH_pzc), surface area, XRD, TG-DTA, TEM, SEM and FTIR analysis, which suggest that the Pb²⁺ ions are incorporated into the crystals of goethite and are also present on the surface in the hydroxylated form. Chromate adsorption studies were carried out in the concentration range 0.25-2.01 mmol L⁻¹ at pH 3, 5 and 7, which show that maximum chromate is adsorbed at the lowest pH of 3 by both the samples of goethite. Effect of temperature on the adsorption of chromate, in the range 303-323 K, shows that the process of adsorption is endothermic in case of pure goethite and exothermic in case of Pb-doped goethite. The values of isosteric heat of adsorption were positive for pure goethite and negative for Pb-doped goethite, which are consistent with the effect of temperature on the process of adsorption. Langmuir isotherm was found applicable to the experimental data. FTIR analysis and equilibrium pH changes reveal that at pH 3 outersphere while at pH 5 and 7 innersphere complexation is the dominant mechanism for chromate adsorption by both the samples of goethite.     

Thermoelectric Properties of the TlBiS<Subscript>2</Subscript>-PbS Alloys

High efficiency of thermoelectric conversion can be achieved by using materials with a high Seebeck coefficient, high electrical conductivity, and low thermal conductivity. Mass-difference-scattering of the phonons is one of the most effective way for reducing the thermal conductivity in bulk thermoelectric materials. Investigations of transport phenomena in (TlBiS₂)_1-x (2PbS)_x alloys system have shown that in solid solutions of the (A³B⁵C ₂ ⁶ )_1-x (2A⁴B⁶)_x type at cation substitution according to scheme 2A⁴⁽⁺²⁾ A ³⁽⁺¹⁾ + B⁵⁽⁺³⁾ occurs a strong decrease of the lattice thermal conductivity. In the vicinity of x = 0. 50 the lattice part of thermal conductivity of (TlBiS₂)_1-x (2PbS)_x alloys decreases down to 0. 26 W/mK, i. e., it approaches the theoretical minimum. As a result, the thermoelectric figure of merit for these alloys ( 25%) exceeds the respective value for lead sulfide at room temperature.     

Thermal conductivity of high-porosity biocarbon precursors of white pine wood

This paper reports on measurements of the thermal conductivity κ and the electrical conductivity σ of high-porosity (cellular pores) biocarbon precursors of white pine tree wood in the temperature range 5–300 K, which were prepared by pyrolysis of the wood at carbonization temperatures (T _carb) of 1000 and 2400°C. The x-ray structural analysis has permitted the determination of the sizes of the nanocrystallites contained in the carbon framework of the biocarbon precursors. The sizes of the nanocrystallites revealed in the samples prepared at T _carb = 1000 and 2400°C are within the ranges 12–35 and 25–70 Å, respectively. The dependences κ(T) and σ(T) are obtained for samples cut along the tree growth direction. As follows from σ(T) measurements, the biocarbon precursors studied are semiconducting. The values of κ and σ increase with increasing carbonization temperature of the samples. Thermal conductivity measurements have revealed that samples of both types exhibit a temperature dependence of the phonon thermal conductivity κ_ph, which is not typical of amorphous (and amorphous to x-rays) materials. As the temperature increases, κ_ph first varies proportional to T, to scale subsequently as ～T ^1.7. The results obtained are analyzed.     

Permittivity,dielectric loss and dc conductivity of NaNO3 crystals grown by epitaxy

The temperature dependence of the d.c. conductivity, the dielectric loss and the permittivity of NaNO₃ single crystals prepared by epitaxial accretion of the (111) plane of NaNO₃ on the (001) plane of mica were investigated. The measurements were performed in a temperature range from 20–300C. Below the melting point a region of intrinsic conductivity (U _I=3·08 eV), caused by Na⁺ ions which are in interstitial sites, was observed. At lower temperature a region II (U _II= 0·87 eV), where the conductivity is due to the presence of divalent impurities, probably Ca^{+ +} followed (structurally sensitive region). Up to 250C polarization is observed, most probably due to ion and electron shifting only. Above that temperature the influence of the relaxed orientation of the NO ₃ ^– groups becomes evident. At 275C the NO ₃ ^s- groups behave in a completely disordered way as indicated by a sudden increase of the permittivity plotted against temperature.We should like to express our gratitude to RNDr. A. Kessler, DrSc, for his very valuable advice.     

Optical,photoelectric and electric properties of single-crystalline Sb2Se3

Measurements of absorption coefficient in the region of the absorption edge, of spectral distribution of photoconductivity and dependence of electrical conductivity upon temperature on Sb₂Se₃ single crystals are given. The absorption of light was proved to correspond to indirect forbidden transitions. The value of optical gapE _g ^opt =(1·11±0·02) eV forE a andE c was determined. From photoconductivity and conductivity measurements the values of the gaps areE _g ^opt =1·11 eV andE _g ^el =1·04 eV. The anisotropy of the electrical conductivity parallel and perpendicular to the cleavage plane is 2·2.     

Thermal conductivity of high-porosity biocarbon preforms of beech wood

This paper reports on measurements performed in the temperature range 5–300 K for the thermal conductivity κ and electrical resistivity ρ of high-porosity (cellular pores) biocarbon preforms prepared by pyrolysis (carbonization) of beech wood in an argon flow at carbonization temperatures of 1000 and 2400°C. X-ray structure analysis of the samples has been performed at 300 K. The samples have revealed the presence of nanocrystallites making up the carbon matrices of these biocarbon preforms. Their size has been determined. For samples prepared at T _carb = 1000 and 2400°C, the nanocrystallite sizes are found to be in the ranges 12–25 and 28–60 κ(T) are determined for the samples cut along and across the tree growth direction. The thermal conductivity κ increases with increasing carbonization temperature and nanocrystallite size in the carbon matrix of the sample. Thermal conductivity measurements conducted on samples of both types have revealed an unusual temperature dependence of the phonon thermal conductivity for amorphous materials. As the temperature increases from 5 to 300 K, it first increases in proportion to T, to transfer subsequently to ∼T ^1.5 scaling. The results obtained are analyzed.     

Thermal conductivity of solid cyclohexane in orientationally ordered and disordered phases

Thermal conductivity Λ _P of solid cyclohexane is measured at a pressure P = 0.1 MPa in the temperature range from 80 K to the melting point, which covers the ranges of low-temperature orientationally ordered phase II and high-temperature orientationally disordered phase I. Thermal conductivity Λ _V is measured at a constant volume in orientationally disordered phase I. The thermal conductivity measured at atmospheric pressure decreases with increasing temperature as Λ _P ∝ T ^−1.15 in phase II, whereas Λ _P ∝ T ^−0.3 in phase I. As temperature increases, isochoric thermal conductivity Λ _V in phase I increases gradually. The experimental data are described in terms of a modified Debye model of thermal conductivity with allowance for heat transfer by both phonons and “diffuse” modes.