Structural stability of heat-treated CoN/CN soft X-ray multilayers fabricated by dual-facing-target sputtering

286 , 176 (1996)]. (1) The interdiffusion critical wavelengths were calculated as 2.00–2.04 nm at temperatures ranging from 473 to 523 K, which is equal to those of Co/C multilayers within the experimental error, indicating that the interdiffusion behaviours in the CoN/CN multilayers are still decided by the thermodynamic properties of the Co-C system. (2) The effective interdiffusivities and macroscopic diffusion coefficients are smaller. (3) The activation energy for diffusion is larger. The features imply that it is possible to improve the thermal stability of Co/C multilayers by doping with N atoms. The high-temperature annealing results imply that the destructive threshold of the CoN/CN multilayers is 100–200 °C higher than that of Co/C multilayers. The small-angle X-ray diffraction of CoN/CN soft X-ray multilayers indicates that the period expansion of the multilayers is only 4% at 400 °C, and the interface pattern still exists even if they were annealed at 700 °C. The large-angle X-ray diffraction and transmission electron microscopy analysis reveal that the crystalline process is significantly retarded if doped with N atoms, leading to a smaller grain size at higher annealing temperatures. The significant improvement of the thermal stability can be interpreted with Raman spectroscopy and X-ray photoelectron spectroscopy analysis. The Raman spectra give the evidence that the formation of the sp³ bonding in the CN sublayers can be suppressed effectively by doping with N atoms, and thus the period expansion resulting from the changes in the density of CN layers can be decreased considerably. The X-ray photoelectron spectra give information about existence of the strong covalent bonding between N atoms and the ionic bonding between Co and N atoms, which can slow down the tendency of the structural relaxation. The interstitial N atoms decrease the mobility of Co atoms, and thus the fcc Co and hcp Co coexist even though the annealing temperature is much higher than the phase transformation temperature of 420 °C, leading to the suppression of the grain growth. Received: 29 May 1997/Accepted: 8 September 1997     

Characterization of heat-treated CN films fabricated by dual-facing-target sputtering for soft X-ray multilayer mirrors

The structural characterization of heat-treated CN films fabricated by dual-facing-target sputtering for soft X-ray multilayer mirrors was performed by means of X-ray diffraction (XRD), Raman spectroscopy (RS) and X-ray photoelectron spectroscopy (XPS). The XRD analyses indicate a graphization process in the CN films during thermal annealing. The Raman analyses imply that the primary bonding in the CN films is sp². In other words, the formation of the sp³ bonding in the CN films can be suppressed effectively by doping with N atoms, and thus the thickness expansion resulting from the changes in the density of CN films during annealing can be decreased considerably. This result is also clarified by the increased conductivity measured. The XPS results give the information of the existence of the strong covalent bonding between N and C atoms, which can slow down the tendency of the structural relaxation during annealing. These results suggest that CN films suitable for soft X-ray multilayers used at high-temperature environments can be obtained by reactive dual-facing-target sputtering. With the low-angle X-ray diffraction measurements, we do observe the enhanced thermal stability of CoN/CN multilayers. Received: 2 October 1998 / Accepted: 21 April 1999 / Published online: 23 September 1999     

Co/C and W/Si multilayers deposited by ion-beam sputtering for the soft X-ray range

We deposited Co/C multilayer mirrors for a wavelength of 4.77 nm and W/Si multilayer mirrors for a wavelength of 1.77 nm by use of ion-beam sputtering. The small-angle diffraction spectrum was used to analyze the structure of the multilayers. With a combination of the experimental diffraction spectra and Apeles’ theory for calculation of the interfacial roughnesses of the multilayers, the interfacial roughnesses of Co/C and W/Si are 0.80 nm and 0.60 nm, respectively, which are lower than that of the substrate. The reflectivity of the Co/C multilayer is measured to be about 20% and that of the W/Si multilayer about 1% at the grazing incidence angle of about 12°. Received: 30 May 2000 / Accepted: 1 August 2000 / Published online: 11 February 2002     

Investigation of ultra-short-period W/C multilayers for soft X-ray optics

Ultra-short-period W/C multilayers having periodic thickness range of 1.15-3.01 nm have been fabricated for soft X-ray optics using the high vacuum direct current (DC) magnetron sputtering system.     

Structural and magnetic properties of Pt in Co/Pt multilayers

[Co(30 Å)/Pt(x Å)]₂₀ multilayers with the Pt layer thicknesses varying from 5 Å to 20 Å were characterized structurally by high angle X-ray diffraction, X-ray reflectivity, X-ray absorption spectroscopy and magnetically by X-ray magnetic circular dichroism. It is found that the structure and magnetic properties of Pt have a strong correlation with the Pt layer thickness. The 20 Å thickness Pt layer is not almost influenced by the adjacent Co layer and the nearest neighbors are dominated by Pt-Pt shells. With decreasing Pt layer thickness, the nearest neighbors are gradually dominated by Pt-Co shells and the Pt-Co intermixing regions also remarkable increase at the interfaces, especially for the 5 Å thickness Pt layer. The orbital and spin magnetic moments as well as the ratio m_orb/m_spin all decrease systematically with increasing Pt layer thickness, indicating that the interface atoms are polarized by direct Pt-Co hybridization, but that the adjacent layers are polarized by Pt-Pt interactions.     

Influence of background pressure on the microstructure and optical properties of Mo/Si multilayers fabricated by magnetron sputtering

Mo/Si multilayers were fabricated by using magnetron sputtering method at different background pressures:6×10-5 Torr,3×10-5 Torr,and 3×10-6 Torr.The reflectivity of the Mo/Si multilayers increased from 1.93% to 16.63%,and the center wavelength revealed a blue shift to 0.12 nm with the decrease of background pressure.Grazing incident X-ray diffraction(GIXRD) indicated that multilayers fabricated at high background pressure possessed better periodic structure and thinner Mo-on-Si interlayers.Low crystallization degree in(110) preferred the orientation of Mo layers and serious interdiffusion in the Mo/Si multilayers fabricated at low background pressure were observed by transmission electron microscopy(TEM).According to quantitative analysis of microstructural parameters,the Mo layers thickness and thickness ratio of Mo/Si multilayers both decreased and approached the design value gradually by the decrease of background pressure.In addition,the thicknesses of Mo-on-Si and Si-on-Mo interlayers were 1.17 nm and 0.85 nm respectively.It is suggested that the influence of background pressures on the microstructure has a critical role in determining the optical properties of Mo/Si multilayers.     

RF magnetron sputtering induced the perpendicular magnetic anisotropy modification in Pt/Co based multilayers

We demonstrate that radio frequency(RF)magnetron sputtering technique can modify the perpendicular magnetic anisotropy(PMA)of Pt/Co/normal metal(NM)thin films.Influence of ion irradiation during RF magnetron sputtering should not be neglected and it can weaken PMA of the deposited magnetic films.The magnitude of this influence can be controlled by tuning RF magnetron sputtering deposition conditions and the upper NM layer thickness.According to the stopping and range of ions in matter(SRIM)simulation results,defects such as displacement atoms and vacancies in the deposited film will increase after the RF magnetron sputtering,which can account for the weakness of PMA.The amplitude changes of the Hall resistance and the threshold current intensity of spin orbit torque(SOT)induced magnetization switching also can be modified.Our study could be useful for controlling magnetic properties of PMA films and designing new type of SOT-based spintronic devices.     

磁控溅射制备Ni/Ti多层膜表面粗糙度

采用磁控溅射方法制备了周期数分别为10,30,50和75的Ni/Ti多层膜,利用X射线掠入射反射测量了多层膜表面和界面的状态,并用原子力显微镜测量了多层膜的表面粗糙度,研究了不同周期数的Ni/Ti多层膜表面粗糙度的变化规律。结果表明:Ni/Ti多层膜表面粗糙度随着膜层数增加而增加,当Ni/Ti多层膜的周期数从10变化到75时,其表面粗糙度由0.80 nm增大到1.69 nm。实验数据拟合表明:Ni/Ti多层膜表面粗糙度与周期数成3次方关系;但在周期数较小时,粗糙度与周期数成线性关系。     

直流磁控溅射Si和玻璃衬底Fe/Co多层膜的磁性能比较

对直流磁控溅射Si和玻璃衬底［Co_t/Fe_3t］₅(t=2, 3, 4, 5nm)多层膜的磁性能进行了比较.对于t相同但衬底不同的样品，实验发现饱和磁化强度相差很小，但是矫顽力却相差很大.对矫顽力差异的理论分析表明，多层膜的粗糙度和畴壁类型是引起这种差异的主要原因.     

Spin reorientation transition in Fe/CeH2 multilayers probed by soft X-ray resonant magnetic scattering

The magnetic domain configurations of Fe 3d spins in Fe/CeH₂ multilayers were measured by soft X-ray resonant magnetic scattering. The interface region could be probed by setting up X-ray standing waves due to the multilayer periodicity. By resolving first- and second-order magnetic scattering contributions, we show that the latter probe directly the magneto-crystalline anisotropy which is dominated by the Fe interface layers causing a spin reorientation transition when the temperature is lowered. Received: 30 May 2001 / Accepted: 4 July 2001 / Published online: 5 October 2001     

Investigation of the thermal stability of Mg/Co periodic multilayers for EUV applications

Applied Physics A - We present the results of the characterization of Mg/Co periodic multilayers and their thermal stability for the EUV range. The annealing study is performed up to a temperature...     

磁控溅射制备的W,WSi2,Si单层膜和W/Si,WSi2/Si多层膜应力

采用直流磁控溅射技术制备了厚度约100 nm的W,WSi2,Si单层膜和周期约为20 nm,Si膜层厚度与周期的比值为0.5的W/Si,WSi2/Si周期多层膜.利用台阶仪对镀膜前后基底表面的面形进行了测试,计算并比较了不同膜系的应力值.结果表明:W单层膜表现出较大的压应力,而W/Si周期膜则表现为张应力.WSi2单层...     

Structural and phase transformations in C/Si multilayers during annealing

The structural evolution of a C/Si periodical multilayers is studied by small-angle X-ray diffraction and cross-section transmission electron microscopy. Mixed zones 0.6–0.65 nm thick with different densities are detected at the C/Si and Si/C interfaces in the initial state. The effect of annealing on the thickness, the density, and the phase composition of the layers and the mixed zones is investigated in the temperature range 300–1050°C. Two stages of changing the multilayer composition period upon heating are found. The period increases as the temperature increases up to 700°C and then decreases. The fracture of the composition begins in the silicon layers, where pores and cubic 3C-SiC nanocrystals form at 900°C. The fracture of the layered structure of the composition is completed at T > 1000°C.     

Giant magnetoresistance of Co/ITO multilayers

The electrical and magnetic properties of Co/ITO multilayers with various ITO layer thickness are studied. Negative giant magnetoresistance with a maximum of −1.9% at room temperature and −2.57% at 15 K are observed. The magnitudes of GMR oscillate with a period of about 1 nm when varying the thickness of ITO layer.     

软X射线Mo/B_4C多层膜应力和热稳定性研究

为了实现7nm波段Mo/B4C多层膜反射镜元件的制备,研究了不同退火方式对Mo/B4C多层膜应力和热稳定性的影响。首先,采用直流磁控溅射方法分别基于石英和硅基板制作Mo/B4C多层膜样品,设计周期为3.58nm、周期数为60,Mo膜层厚度与周期的比值为0.4。其次,采用不同的退火方式对所制作的样品进行退火实验,最高退火温度500℃。最后,分别采用X射线掠入射反射、X射线散射和光学干涉仪的方法对退火前后的Mo/B4C多层膜的周期、界面粗糙度和应力进行测试。测试结果表明采用真空退火方式能够有效降低Mo/B4C多层膜的应力,且退火前后Mo/B4C多层膜的周期和界面粗糙度无明显变化,证明Mo/B4C多层膜在500℃以内具有很好的热稳定性。     

Perpendicular exchange bias of Co/Pt multilayers

Exchange bias measurements of ferromagnetic/antiferromagnetic (F/AF) bilayers are typically performed with the magnetization of the F layer parallel to the AF interface. We describe measurements of Co/Pt multilayers with out-of-plane magnetic easy axis that are exchange biased with CoO. Field-cooling experiments with the applied field perpendicular and parallel to the sample plane exhibit loop shifts and enhanced coercivities. Modeling and comparison to biasing of samples with planar easy axis suggests such measurements provide a way to probe the spin projections at F/AF interfaces.     

Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering

TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN]_n multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N₂ processing pressure with varied N₂ partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases in the films from metallic bcc Ta to a mixture of bcc Ta(N) and hexagonal Ta₂N, then sequentially to fcc TaN and a mixture of TaN with N-rich phases when the N₂ partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the preferred crystalline orientation of the films from bcc Ta [100] to [110], then to random and finally to fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like behavior in the range of 77–295 K. The films showed a typical polycrystalline textured structure with small, crystallized domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous regions were observed in the film. TaN film with [111]-preferred orientation and a resistivity of 6.0 mΩ cm was obtained at 25% N₂ partial pressure, which may be suitable for the interlayer in [FeN/TaN]_n multilayers. Received: 6 December 1999 / Accepted: 24 July 2000 / Published online: 9 November 2000