Probing the onset of strong localization and electron–electron interactions with the presence of a direct insulator–quantum Hall transition

We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator–quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron–electron interaction effects for the observed transition in our study.     

Bound states in a quantized Hall ferromagnet

We report on a study of the quasielectron-quasihole and skyrmion-antiskyrmion bound states in the ν = 1 quantum Hall regime. The short-range attraction potential is assumed to be determined by a point magnetic impurity. The calculations are performed within the strong-field approximation when the binding energy and the characteristic electron-electron interaction energy are smaller than the Landau level spacing. The excitonic representation technique is used in that case.     

Current correlations in quantum spin Hall insulators

We consider a four-terminal setup of a two-dimensional topological insulator (quantum spin Hall insulator) with local tunneling between the upper and lower edges. The edge modes are modeled as helical Luttinger liquids and the electron-electron interactions are taken into account exactly. Using perturbation theory in the tunneling, we derive the cumulant generating function for the interedge current. We show that different possible transport channels give rise to different signatures in the current noise and current cross correlations, which could be exploited in experiments to elucidate the interplay between electron-electron interactions and the helical nature of the edge states.     

Reconstruction of fractional quantum Hall edges

We study the interplay of electron-electron interaction, confining potential and effects of finite temperature at the edge of a quantum Hall liquid. Our exact diagonalization calculation indicates that edge reconstruction occurs in the fractional quantum Hall regime for a variety of confining potential, including ones that correspond to a "sharp" edge. Our finite temperature Hartree-Fock calculation for integer quantum Hall edges indicates that reconstruction is suppressed above a certain temperature. We discuss the implication of our results on recent edge tunneling and microwave absorption experiments.     

Interaction effects and pseudogap in two-dimensional lateral tunnel junctions

Tunneling characteristics of a two-dimensional lateral tunnel junction are reported. A pseudogap on the order of Coulomb energy is detected in the tunneling density of states (TDOS) when two identical two-dimensional electron systems are laterally separated by a thin energy barrier. The Coulombic pseudogap remains robust well into the quantum Hall regime until it is overshadowed by the cyclotron gap in the TDOS. The pseudogap is modified by the in-plane magnetic field, demonstrating a nontrivial effect of the in-plane magnetic field on the electron-electron interaction.     

Electron interactions and transport between coupled quantum Hall edge states

We examine the effects of electron-electron interactions on transport between edge states in a multilayer integer quantum Hall system. The edge states of such a system, coupled by interlayer tunneling, form a two-dimensional, chiral metal at the sample surface. We calculate the temperature-dependent conductivity and the amplitude of conductance fluctuations in this chiral metal, treating Coulomb interactions and disorder exactly in the weak-tunneling limit. We find that the conductivity increases with increasing temperature, as observed in recent experiments, and we show that the correlation length characterizing conductance fluctuations varies inversely with temperature.     

Direct measurement of the local density of states of a disordered one-dimensional conductor

One-dimensional electron systems (1DESs) containing two and one occupied subbands are found below the different types of [11;2] steps of the InAs(110) surface. Using low-temperature scanning tunneling spectroscopy, we determined the subband energies, the disorder potential, and the local density of states of these 1DESs. The rather complete knowledge of the 1DES allowed us to compare the measured LDOS with a single-particle calculation. Surprisingly, we did not find significant deviations from the calculation albeit the electron-electron interaction in the 1DESs is stronger than the electron-disorder interaction.     

Universality of the edge-tunneling exponent of fractional quantum Hall liquids

In a microscopic model of fractional quantum Hall liquids with electron-electron interactions and confinement, we calculate the edge Green's function via exact diagonalization. Our results for nu=1/3 and 2/3 suggest that, in the presence of Coulomb interaction, "external" parameters such as the sharpness of the edge and the strength of the edge confining potential, which can lead to edge reconstruction, may cause deviations from universality in the edge-tunneling I-V exponent. In particular, we do not find any direct dependence of this exponent on the range of the interaction potential as suggested by recent calculations in contradiction to the topological nature of the edge.     

Fractional quantum Hall effect at a suppressed energy gap

In the fractional quantum Hall effect regime, the diagonal (ρ_xx) and Hall (ρ_xy) magnetoresistivity tensor components of the two-dimensional electron system (2DES) in gated GaAs/Al_xGa_1−x As heterojunctions are measured together with the capacitance between 2DES and the gate. The 1/3-and 2/3-fractional quantum Hall effects are observed at rather low magnetic fields where the corresponding fractional minima in the thermodynamic density of the states have already disappeared, thus, implying the suppression of the quasiparticle energy gaps. The text was submitted by the authors in English.     

Entanglement Dynamics of Electrons and Photons

Entanglement is a fundamental feature of quantum theory as well as a key resource for quantum computing and quantum communication, but the entanglement mechanism has not been found at present. We think when the two subsystems exist interaction directly or indirectly, they can be in entanglement state. such as, in the Jaynes-Cummings model, the entanglement between the atom and the light field comes from their interaction. In this paper, we have studied the entanglement mechanism of electron-electron and photon-photon, which are from the spin-spin interaction. We found their total entanglement states are relevant both space state and spin state. When two electrons or two photons are far away, their entanglement states should be disappeared even if their spin state is entangled.     

Effective spin dephasing mechanism in confined two-dimensional topological insulators

A Kramers pair of helical edge states in quantum spin Hall effect (QSHE) is robust against normal dephasing but not robust to spin dephasing. In our work, we provide an effective spin dephasing mechanism in the puddles of two-dimensional (2D) QSHE, which is simulated as quantum dots modeled by 2D massive Dirac Hamiltonian. We demonstrate that the spin dephasing effect can originate from the combination of the Rashba spin-orbit coupling and electron-phonon interaction, which gives rise to inelastic backscattering in edge states within the topological insulator quantum dots, although the time-reversal symmetry is preserved throughout. Finally, we discuss the tunneling between extended helical edge states and local edge states in the QSH quantum dots, which leads to backscattering in the extended edge states. These results can explain the more robust edge transport in InAs/GaSb QSH systems.     

Reduced electron relaxation rate in multielectron quantum dots

We use a configuration-interaction approach and the Fermi golden rule to investigate electron-phonon interaction in multielectron quantum dots. Lifetimes are computed in the low-density, highly correlated regime. We report numerical evidence that electron-electron interaction generally leads to reduced decay rates of excited electronic states in weakly confined quantum dots, where carrier relaxation is dominated by the interaction with longitudinal acoustic phonons.     

Tunable topological quantum states in three- and two-dimensional materials

We review our theoretical advances in tunable topological quantum states in three- and twodimensional materials with strong spin–orbital couplings. In three-dimensional systems, we propose a new tunable topological insulator, bismuth-based skutterudites in which topological insulating states can be induced by external strains. The orbitals involved in the topological band-inversion process are the d- and p-orbitals, unlike typical topological insulators such as Bi₂Se₃and BiTeI, where only the p-orbitals are involved in the band-inversion process. Owing to the presence of large d-electronic states, the electronic interaction in our proposed topological insulator is much stronger than that in other conventional topological insulators. In two-dimensional systems, we investigated 3d-transition-metal-doped silicene. Using both an analytical model and first-principles Wannier interpolation, we demonstrate that silicene decorated with certain 3d transition metals such as vanadium can sustain a stable quantum anomalous Hall effect. We also predict that the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition-metal-doped silicenes where the energy band inversion occurs. These findings provide realistic materials in which topological states could be arbitrarily controlled.     

Imaging transport resonances in the quantum Hall effect

We use a scanning capacitance probe to image transport in the quantum Hall system. Applying a dc bias voltage to the tip induces a ring-shaped incompressible strip (IS) in the 2D electron system (2DES) that moves with the tip. At certain tip positions, short-range disorder in the 2DES creates a quantum dot island in the IS. These islands enable resonant tunneling across the IS, enhancing its conductance by more than 4 orders of magnitude. The images provide a quantitative measure of disorder and suggest resonant tunneling as the primary mechanism for transport across ISs.     

Time domain capacitance spectroscopy of tunneling electrons in the two-dimensional electron gas

We have developed a technique capable of measuring the tunneling current into both localized and conducting states in a 2D electron system (2DES). The method yields I-V characteristics for tunneling with no distortions arising from low 2D in-plane conductivity. We have used the technique to determine the pseudogap energy spectrum for electron tunneling into and out of a 2D system and, further, we have demonstrated that such tunneling measurements reveal spin relaxation times within the 2DEG. Pseudogap: In a 2DEG in perpendicular magnetic field, a pseudogap develops in the tunneling density of states at the Fermi energy. We resolve a linear energy dependence of this pseudogap at low excitations. The slopes of this linear gap are strongly field dependent. No existing theory predicts the observed behavior. Spin relaxation: We explore the characteristics of equilibrium tunneling of electrons from a 3D electrode into a high mobility 2DES. For most 2D Landau level filling factors, we find that electrons tunnel with a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (ν=1, 3 and 1/3) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.     

Unification of Laughlin and Moore-Read states in SUSY quantum Hall effect

Based on the recently proposed SUSY quantum Hall effect, we show that Laughlin and Moore-Read states are related by a hidden SUSY transformation. Regarding the SUSY Laughlin wavefunction as a master wavefunction, Laughlin and Moore-Read states appear as two extreme limits of component wavefunctions. Realizations of topological excitations on Laughlin and Moore-Read states are also discussed in the SUSY formalism. We develop a stereographically projected formulation of the SUSY quantum Hall effect. With appropriate interpretation of Grassmann odd coordinates, we illustrate striking analogies between SUSY quantum Hall effect and superfluidity.     

Evidence for a new dissipationless effect in 2D electronic transport

In an ultraclean 2D electron system (2DES) subjected to crossed millimeterwave (30-150 GHz) and weak (B<2 kG) magnetic fields, a series of apparently dissipationless states emerges as the system is detuned from cyclotron resonances. Such states are characterized by an exponentially vanishing low-temperature diagonal resistance and a classical Hall resistance. The activation energies associated with such states exceed the Landau level spacing by an order of magnitude. Our findings are likely indicative of a collective ground state previously unknown for 2DES.     

Electron-electron interaction in the magnetoresistance of graphene

We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau quantization, the observed temperature-dependent parabolic magnetoresistivity is a manifestation of the electron-electron interaction. We can consistently describe the data with a model for diffusive (magneto)transport that also includes magnetic-field-dependent effects originating from ballistic time scales. We find an excellent agreement between the experimentally observed temperature dependence of magnetoresistivity and the theory of electron-electron interaction in the diffusive regime. We can further assign a temperature-driven crossover to the reduction of the multiplet modes contributing to electron-electron interaction from 7 to 3 due to intervalley scattering. In addition, we find a temperature-independent ballistic contribution to the magnetoresistivity in classically strong magnetic fields.     

Microwave resonances in low-filling insulating phases of two-dimensional electron and hole systems

The conductivity of the high magnetic field insulating phases of two-dimensional electron and hole systems (2DES and 2DHS) of sufficiently low disorder exhibits a resonance at microwave frequency. We present and compare results on this resonance in a moderate disorder 2DES and in a high quality 2DHS. The 2DES exhibits the resonance even though the high- insulator is not reentrant around the fractional quantum Hall effect. The resonance in the 2DHS is much sharper than that in the 2DES, and appears to be inconsistent with the standard model of a two-dimensional harmonic oscillator in a magnetic field.     

Topological magnetic insulators with corundum structure

Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap are protected by time-reversal symmetry. When a proper kind of antiferromagnetic long-range order is established in a topological insulator, the system supports axionic excitations. In this Letter, we study theoretically the electronic states in a transition metal oxide of corundum structure, in which both spin-orbit interaction and electron-electron interaction play crucial roles. A tight-binding model analysis predicts that materials with this structure can be strong topological insulators. Because of the electron correlation, an antiferromagnetic order may develop, giving rise to a topological magnetic insulator phase with axionic excitations.